2013 IEEE 8th Nanotechnology Materials and Devices Conference (NMDC)最新文献

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A study on cell motility mechanism using a cell manipulation system with optical tweezers 利用光镊细胞操纵系统研究细胞运动机制
2013 IEEE 8th Nanotechnology Materials and Devices Conference (NMDC) Pub Date : 2013-10-01 DOI: 10.1109/NMDC.2013.6707464
Hao Yang, Xue Gou, Yong Wang, Dong Sun
{"title":"A study on cell motility mechanism using a cell manipulation system with optical tweezers","authors":"Hao Yang, Xue Gou, Yong Wang, Dong Sun","doi":"10.1109/NMDC.2013.6707464","DOIUrl":"https://doi.org/10.1109/NMDC.2013.6707464","url":null,"abstract":"This paper presents a novel methodology to investigate the cell motility mechanism during cell migration using a cell manipulation system with optical tweezers. A specially designed microbeads loaded with chemoattractant, which are trapped by optical tweezers, release chemoattractant molecules into liquid environment to induce cell migration. A polystyrene bead is trapped and placed in front of the cell as a barrier bead. When the cell comes into contact with the bead, the bead has an offset with respect to the trap center. This offset can be used to determine the protrusion force of the cell. Experiments are performed to verify the effectiveness of the proposed method.","PeriodicalId":112068,"journal":{"name":"2013 IEEE 8th Nanotechnology Materials and Devices Conference (NMDC)","volume":"51 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122594881","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Hydrogen adsorption on mesoporous silica microtubules fabricated through the self-assembly of alpha-cyclodextrin and pluronic F127 surfactant 环糊精和pluronic F127表面活性剂自组装制备的介孔二氧化硅微管对氢的吸附
2013 IEEE 8th Nanotechnology Materials and Devices Conference (NMDC) Pub Date : 2013-10-01 DOI: 10.1109/NMDC.2013.6707453
S. Deulkar, W. Lai, Jow-Lay Huang
{"title":"Hydrogen adsorption on mesoporous silica microtubules fabricated through the self-assembly of alpha-cyclodextrin and pluronic F127 surfactant","authors":"S. Deulkar, W. Lai, Jow-Lay Huang","doi":"10.1109/NMDC.2013.6707453","DOIUrl":"https://doi.org/10.1109/NMDC.2013.6707453","url":null,"abstract":"Morphology of mesoporous silica has been transformed from spherical to ellipsoidal form due to the structure directing role of alpha-cyclodextrin. The product exhibits a well ordered pore structure as deciphered from the SAXRD and TEM measurements. SEM studies indicate that the samples without alpha-cyclodextrin possess a spherical form with diameters ranging from 1.5 micron to 2.5 micron. These are transformed into a cylindrical structure with aspect ratio ranging from 2.1 to 4.7. FTIR spectra reveal distinct peaks corresponding to Si-O linkage. The Brunauer-Emmett-Teller (BET) pore surface area and the pore size for the samples, range from 2.7 to 612 m2 / gm and 3.89 to 10.95 nm respectively. The formation mechanism of the elongated cylindrical mesoporous silica is proposed to occur based on the hydrophilic and hydrophobic nature existent within cyclic alpha - cyclodextrin. The stoichiometric quotient qexp captures the degree of inclusion of alpha - cyclodextrin in the Pluronic precursor. A plot of BET pore surface area vs. qexp , reveals that samples with similar qexp but with low TEOS concentration have higher BET pore surface area than those prepared with higher TEOS concentrations. This trend correlates with the hydrogen adsorption properties of the synthesized mesoporous samples, wherein samples with larger BET pore surface area, exhibit enhanced hydrogen adsorption capacity.","PeriodicalId":112068,"journal":{"name":"2013 IEEE 8th Nanotechnology Materials and Devices Conference (NMDC)","volume":"179 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124445064","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Fabrication of metal nanoparticles from metal-filled carbon nanofibers and their size control by heating 金属填充碳纳米纤维制备金属纳米粒子及其加热尺寸控制
2013 IEEE 8th Nanotechnology Materials and Devices Conference (NMDC) Pub Date : 2013-10-01 DOI: 10.1109/NMDC.2013.6707468
T. Tokunaga, T. Kanematsu, T. Ota, K. Sasaki, T. Yamamoto, Y. Hayashi
{"title":"Fabrication of metal nanoparticles from metal-filled carbon nanofibers and their size control by heating","authors":"T. Tokunaga, T. Kanematsu, T. Ota, K. Sasaki, T. Yamamoto, Y. Hayashi","doi":"10.1109/NMDC.2013.6707468","DOIUrl":"https://doi.org/10.1109/NMDC.2013.6707468","url":null,"abstract":"In situ environmental transmission electron microscopy (ETEM) observation was used to reveal Sn inside Sn-filled carbon nanofibers (CNFs) during heating. Before and during heating, the Sn was covered completely by CNFs. The volume of Sn present in the Sn-filled CNFs gradually decreased during heating, with new Sn particles appearing at the top of the Sn-filled CNFs. It is thought that Sn diffused out of the Sn-filled CNFs and into the carbon wall of the metal-filled CNFs (MFCNFs). The specific surface area at the top of Sn-filled CNFs is higher specific surface than that at other parts and the temperature at the top of the MFCNF is lower than that at other parts; therefore, diffused Sn particles were formed at only the top of the Sn-filled CNF. Fabrication of Sn metal particles was tried by heating the Sn-filled CNFs, and it was clear that the metal particle size could be controlled by controlling the heating time.","PeriodicalId":112068,"journal":{"name":"2013 IEEE 8th Nanotechnology Materials and Devices Conference (NMDC)","volume":"20 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128368320","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Formation, cathodoluminescence and field emission of ZnO quantum dots attached on oxygen plasma activated carbon nanotubes 氧等离子体活性炭纳米管上ZnO量子点的形成、阴极发光和场发射
2013 IEEE 8th Nanotechnology Materials and Devices Conference (NMDC) Pub Date : 2013-10-01 DOI: 10.1109/NMDC.2013.6707474
Chun-Kuo Liu, H. Shih
{"title":"Formation, cathodoluminescence and field emission of ZnO quantum dots attached on oxygen plasma activated carbon nanotubes","authors":"Chun-Kuo Liu, H. Shih","doi":"10.1109/NMDC.2013.6707474","DOIUrl":"https://doi.org/10.1109/NMDC.2013.6707474","url":null,"abstract":"A simple method to grow uniform ZnO quantum dots homogenously on the whole surface of multi-wall carbon nanotubes (MWCNTs) with oxygen plasma activation was reported in this work. The ZnO quantum dots can be successfully grown without catalyst using and well attached on the whole surface of MWCNTs with 20 s oxygen plasma treatment (O20). The ZnO quantum dots are uniform in the diameter of ~15 nm, and exhibit a single crystalline hexagonal wurtzite structure with lattice fringe of ~0.52 nm and growth direction along the [0001] axis from XRD and HRTEM results. Auger electron spectroscopy results show that the elemental composition of Zn on O20 sample can reach up to 43.8%, and the Zn/O ratio is ~1. From cathodoluminescence results, O20 sample shows a small ratio of green emission intensity to ultra-violet emission intensity, revealing that O20 sample has a highly crystalline structure with fewer oxygen deficiencies. ZnO quantum dots attached on MWCNTs with longer durations of oxygen plasma treatment result in a slight blue shift of both UV and green emission. Besides, O20 sample also reveals outstanding field emission properties (turn-on field of 0.27 V/μm, threshold field of 3.24 V/μm, field enhancement factor of 11897) greater than pristine MWCNTs (turn-on field of 4.39 V/μm, threshold field of 6.16 V/μm, field enhancement factor of 1582). Therefore, ZnO quantum dots attached on oxygen plasma activated carbon nanotubes successfully combine the particular advantages of ZnO and MWCNTs.","PeriodicalId":112068,"journal":{"name":"2013 IEEE 8th Nanotechnology Materials and Devices Conference (NMDC)","volume":"227 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124505793","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Sulfur-assisted growth of silicon nanowires using the VLS method 硫辅助生长硅纳米线的VLS法
2013 IEEE 8th Nanotechnology Materials and Devices Conference (NMDC) Pub Date : 2013-10-01 DOI: 10.1109/NMDC.2013.6707475
T. Ishiyama, S. Nakagawa, Y. Ishii, M. Fukuda
{"title":"Sulfur-assisted growth of silicon nanowires using the VLS method","authors":"T. Ishiyama, S. Nakagawa, Y. Ishii, M. Fukuda","doi":"10.1109/NMDC.2013.6707475","DOIUrl":"https://doi.org/10.1109/NMDC.2013.6707475","url":null,"abstract":"The synthesis of single-crystal silicon (Si) nanowires by a metal-catalyst-free vapor-liquid-solid (VLS) process has been studied. Si nanowires have been successfully synthesized by a simple thermal treatment without using a metal catalyst, while well-aligned nanowires have been grown by the conventional Au-catalytic VLS process. It is thought that sulfur, rather than metals, plays an important role in this synthesis technique, which is distinct from the conventional metal-catalytic VLS process. For the case without metal catalysts, single-crystal Si nanowires are grown by a VLS process in which the silicon sulfides produced by a reaction between Si and sulfur act as both molten eutectic alloy droplets and the source gases for nanowire growth. Structural characterizations of the nanowires were performed using scanning electron microscopy (SEM) and X-ray diffraction (XRD). The XRD measurements showed that the single crystal nanowires on a (111)-oriented Si substrate were preferentially oriented in a <;111> growth direction.","PeriodicalId":112068,"journal":{"name":"2013 IEEE 8th Nanotechnology Materials and Devices Conference (NMDC)","volume":"75 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128671600","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Optimization of SiC Schottky diode using linear p-top for edge termination 基于线性p顶的SiC肖特基二极管边端优化
2013 IEEE 8th Nanotechnology Materials and Devices Conference (NMDC) Pub Date : 2013-10-01 DOI: 10.1109/NMDC.2013.6707473
Aryadeep Mrinal, Kumar M. P. Vijay, N. Vivek, M. Manjunatha, G. Sheu, Shao-Ming Yang
{"title":"Optimization of SiC Schottky diode using linear p-top for edge termination","authors":"Aryadeep Mrinal, Kumar M. P. Vijay, N. Vivek, M. Manjunatha, G. Sheu, Shao-Ming Yang","doi":"10.1109/NMDC.2013.6707473","DOIUrl":"https://doi.org/10.1109/NMDC.2013.6707473","url":null,"abstract":"The trade-off between on-state and off-state characteristics of 4H-SiC Schottky diode has been optimized using linear p-top in the edge termination structure. The advantage of linear p-top has been illustrated by comparing results of 4H-SiC Schottky diode with planar structure using Silvaco Atlas Technology-computer-aided-design (TCAD) simulation tool. The breakdown-voltage characteristic of the SiC Schottky diode is significantly improved with the linear p-top edge termination. The planar SiC Schottky diode shows less than 300-V breakdown voltage, while the linear p-top structure shows breakdown voltage greater than 800-V with forward voltage <;1.5-V. The pronounced improvement in the breakdown-voltage characteristics is attributed to the reduction of electric field at the Schottky contact edge well by the linear p-top edge termination. The change in forward voltage and breakdown voltage with the variation in length of P-top mask in the termination region is observed.","PeriodicalId":112068,"journal":{"name":"2013 IEEE 8th Nanotechnology Materials and Devices Conference (NMDC)","volume":"41 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121960658","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Extremely stable and harsh-environment devices by Transfer Mold field emitter fabrication method 极为稳定和恶劣环境的器件通过转移模场发射极制造方法
2013 IEEE 8th Nanotechnology Materials and Devices Conference (NMDC) Pub Date : 2013-10-01 DOI: 10.1109/NMDC.2013.6707466
M. Nakamoto, J. Moon
{"title":"Extremely stable and harsh-environment devices by Transfer Mold field emitter fabrication method","authors":"M. Nakamoto, J. Moon","doi":"10.1109/NMDC.2013.6707466","DOIUrl":"https://doi.org/10.1109/NMDC.2013.6707466","url":null,"abstract":"Extremely stable and harsh-environment devices have been fabricated by Transfer Mold emitter fabrication method and by using amorphous carbon (a-C) as an emitter material to realize the vacuum nanoelectronic devices such as electric propulsion engines, power switching devices and field emission displays (FEDs) in harsh environments, for example, in strong radical atmospheres of space, in high and low temperature atmospheres, and in oxidation gas atmospheres during FEDs fabrication process. Transfer Mold a-C FEAs exhibit the most stable field emission characteristics having the emission fluctuation ratio of ±1.62%, which is the lowest values ever reported. Panel and pixel electric thrusters by using Transfer Mold FEAs have been proposed. These electric thrusters make it easy to produce large and small thrusters. The Transfer Mold a-C FEAs exhibit very stable field-emission characteristics and the highest resistance to harsh environments. Therefore, they can be used to make highly efficient and reliable vacuum electronic devices such as electric propulsion engines and FEDs that are manufactured by using various reactive gases and highly oxidizing atmospheres.","PeriodicalId":112068,"journal":{"name":"2013 IEEE 8th Nanotechnology Materials and Devices Conference (NMDC)","volume":"17 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123860718","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Tin (Sn) for enhancing performance in silicon CMOS 用于提高硅CMOS性能的锡(Sn)
2013 IEEE 8th Nanotechnology Materials and Devices Conference (NMDC) Pub Date : 2013-10-01 DOI: 10.1109/NMDC.2013.6707470
A. Hussain, H. Fahad, Nirpendra Singh, G. T. Torres Sevilla, U. Schwingenschlogl, M. Hussain
{"title":"Tin (Sn) for enhancing performance in silicon CMOS","authors":"A. Hussain, H. Fahad, Nirpendra Singh, G. T. Torres Sevilla, U. Schwingenschlogl, M. Hussain","doi":"10.1109/NMDC.2013.6707470","DOIUrl":"https://doi.org/10.1109/NMDC.2013.6707470","url":null,"abstract":"We study a group IV element: tin (Sn) by integrating it into silicon lattice, to enhance the performance of silicon CMOS. We have evaluated the electrical properties of the SiSn lattice by performing simulations using First-principle studies, followed by experimental device fabrication and characterization. We fabricated high-κ/metal gate based Metal-Oxide-Semiconductor capacitors (MOSCAPs) using SiSn as channel material to study the impact of Sn integration into silicon.","PeriodicalId":112068,"journal":{"name":"2013 IEEE 8th Nanotechnology Materials and Devices Conference (NMDC)","volume":"124 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122043559","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Comparative study of process variations in junctionless and conventional double-gate MOSFETs 无结与常规双栅mosfet工艺变化的比较研究
2013 IEEE 8th Nanotechnology Materials and Devices Conference (NMDC) Pub Date : 2013-10-01 DOI: 10.1109/NMDC.2013.6707461
Chun-Yu Chen, Jyi-Tsong Lin, M. Chiang
{"title":"Comparative study of process variations in junctionless and conventional double-gate MOSFETs","authors":"Chun-Yu Chen, Jyi-Tsong Lin, M. Chiang","doi":"10.1109/NMDC.2013.6707461","DOIUrl":"https://doi.org/10.1109/NMDC.2013.6707461","url":null,"abstract":"This work presents an in-detail investigation of process variations in symmetrical junctionless double-gate CMOS using 2D numerical simulation. General variability issues including oxide thickness, gate work function, and channel thickness are discussed. Uniform probability density function was assumed for the dopant atom location in the junctionless channel. Based on the statistical doping profiles, device simulation was performed by solving 2D drift-diffusion equations with modified local density approximation as used mostly in bulks device for quantum confinement. This paper is organized as follows. Section II introduces the simulation technique for device structure. Section III presents a comprehensive analysis for impact of process fluctuations on threshold voltage. Finally, conclusions are drawn.","PeriodicalId":112068,"journal":{"name":"2013 IEEE 8th Nanotechnology Materials and Devices Conference (NMDC)","volume":"85 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132368012","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 13
A novel selective growth of nanowire on CMOS MEMS compatible gas sensor 一种新型的CMOS - MEMS兼容气体传感器纳米线选择性生长方法
2013 IEEE 8th Nanotechnology Materials and Devices Conference (NMDC) Pub Date : 2013-10-01 DOI: 10.1109/NMDC.2013.6707457
J. Lu, Chuen-Ren Jeng, Chih-Hsiung Shen, Shu-Jung Chen
{"title":"A novel selective growth of nanowire on CMOS MEMS compatible gas sensor","authors":"J. Lu, Chuen-Ren Jeng, Chih-Hsiung Shen, Shu-Jung Chen","doi":"10.1109/NMDC.2013.6707457","DOIUrl":"https://doi.org/10.1109/NMDC.2013.6707457","url":null,"abstract":"In this paper, we proposed a new sensing mechanism which the sensing structure with zinc oxide (ZnO) nanowires to increase sensitivity. The ZnO nanowires are grown selectively on top of the sensing membrane with proposed ring-type electrodes which is implemented using 0.35μm CMOS MEMS process. The ZnO nanowire is achieved by chemical bath deposition (CBD) method with several prepared solutions, zinc acetate dihydrate and hexamethylenetetramine mixed at Zn(CH<sub>3</sub>COO)<sub>2</sub>·2H<sub>2</sub>O · C<sub>6</sub>H<sub>12</sub>N<sub>4</sub>=1:1, the others is zinc nitrate hexahydrate and hexamethylenetetramine mixed at Zn(NO<sub>3</sub>)<sub>2</sub>× 6H<sub>2</sub>O : C<sub>6</sub>H<sub>12</sub>N<sub>4</sub>=5:1. The growth of nanowires reveals a novel selective deposition on the metal layers of sensing area other than the passivation of Si<sub>3</sub>N<sub>4</sub> which means a high specific definition of sensing region beyond the conventional sol-gel method. The research on selective growth of nanowire benefits the deposition of sensing material on certain active regions beyond the drawback of conventional sol-gel deposition. The advantages of the sensor are low cost and suitable for industrial production.","PeriodicalId":112068,"journal":{"name":"2013 IEEE 8th Nanotechnology Materials and Devices Conference (NMDC)","volume":"256 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115008950","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
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