用于提高硅CMOS性能的锡(Sn)

2013 IEEE 8th Nanotechnology Materials and Devices Conference (NMDC) Pub Date : 2013-10-01 DOI:10.1109/NMDC.2013.6707470

A. Hussain, H. Fahad, Nirpendra Singh, G. T. Torres Sevilla, U. Schwingenschlogl, M. Hussain

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引用次数: 2

摘要

我们研究了将IV族元素锡(Sn)集成到硅晶格中，以提高硅CMOS的性能。我们通过使用第一原理研究进行模拟来评估SiSn晶格的电学性质，然后进行实验器件制造和表征。我们利用SiSn作为通道材料制备了高κ/金属栅基金属氧化物半导体电容器(MOSCAPs)，研究了Sn集成到硅中的影响。

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Tin (Sn) for enhancing performance in silicon CMOS

We study a group IV element: tin (Sn) by integrating it into silicon lattice, to enhance the performance of silicon CMOS. We have evaluated the electrical properties of the SiSn lattice by performing simulations using First-principle studies, followed by experimental device fabrication and characterization. We fabricated high-κ/metal gate based Metal-Oxide-Semiconductor capacitors (MOSCAPs) using SiSn as channel material to study the impact of Sn integration into silicon.

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2013 IEEE 8th Nanotechnology Materials and Devices Conference (NMDC)

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