发布求助
文献互助 智能选刊 最新文献

LEOS 2007 - IEEE Lasers and Electro-Optics Society Annual Meeting Conference Proceedings最新文献

筛选
英文 中文
Room-Temperature Direct Bonding for Integrated Optical Devices 集成光学器件的室温直接键合
LEOS 2007 - IEEE Lasers and Electro-Optics Society Annual Meeting Conference Proceedings Pub Date : 2008-09-26 DOI: 10.1109/INOW.2008.4634511
R. Takei, K. Abe, T. Mizumoto
{"title":"Room-Temperature Direct Bonding for Integrated Optical Devices","authors":"R. Takei, K. Abe, T. Mizumoto","doi":"10.1109/INOW.2008.4634511","DOIUrl":"https://doi.org/10.1109/INOW.2008.4634511","url":null,"abstract":"We report a room-temperature direct bonding technique for wafer combinations of InP-Ce:YIG, Si-InP and Si-LiNbO3. This technique is versatile for integrating optical devices that are composed of different crystals.","PeriodicalId":110592,"journal":{"name":"LEOS 2007 - IEEE Lasers and Electro-Optics Society Annual Meeting Conference Proceedings","volume":"258 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-09-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131988788","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Implementation of CSRZ Signal Generator Using a Single-Stage External Modulator and a Wideband CMOS Signal Mixer 用单级外调制器和宽带CMOS信号混频器实现CSRZ信号发生器
LEOS 2007 - IEEE Lasers and Electro-Optics Society Annual Meeting Conference Proceedings Pub Date : 2007-11-12 DOI: 10.1109/LEOS.2007.4382692
Sae-Kyoung Kang, Dong-Soo Lee, Hyunwoo Cho, J. Ko
{"title":"Implementation of CSRZ Signal Generator Using a Single-Stage External Modulator and a Wideband CMOS Signal Mixer","authors":"Sae-Kyoung Kang, Dong-Soo Lee, Hyunwoo Cho, J. Ko","doi":"10.1109/LEOS.2007.4382692","DOIUrl":"https://doi.org/10.1109/LEOS.2007.4382692","url":null,"abstract":"We demonstrate a carrier-suppressed return-to-zero signal generator, which employs a single-stage external modulator and a newly designed wideband signal mixer. The wideband signal mixer is implemented by using 0.13-mum CMOS technology.","PeriodicalId":110592,"journal":{"name":"LEOS 2007 - IEEE Lasers and Electro-Optics Society Annual Meeting Conference Proceedings","volume":"29 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-11-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115213684","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Silicon Photonic On-Chip Optical Interconnection Networks 硅光子片上光互连网络
LEOS 2007 - IEEE Lasers and Electro-Optics Society Annual Meeting Conference Proceedings Pub Date : 2007-11-12 DOI: 10.1109/LEOS.2007.4382483
K. Bergman
{"title":"Silicon Photonic On-Chip Optical Interconnection Networks","authors":"K. Bergman","doi":"10.1109/LEOS.2007.4382483","DOIUrl":"https://doi.org/10.1109/LEOS.2007.4382483","url":null,"abstract":"The recent emergence of multicore processor architectures is challenging the on-chip and inter-node communications infrastructure. We present the design of a silicon photonic network-on-chip that can deliver a high-bandwidth, low-latency, and power efficient scalable solution for future chip multiprocessors.","PeriodicalId":110592,"journal":{"name":"LEOS 2007 - IEEE Lasers and Electro-Optics Society Annual Meeting Conference Proceedings","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-11-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115397023","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 11
Advanced Optical Modulators on InP InP上的先进光调制器
LEOS 2007 - IEEE Lasers and Electro-Optics Society Annual Meeting Conference Proceedings Pub Date : 2007-11-12 DOI: 10.1109/LEOS.2007.4382689
R. Griffin
{"title":"Advanced Optical Modulators on InP","authors":"R. Griffin","doi":"10.1109/LEOS.2007.4382689","DOIUrl":"https://doi.org/10.1109/LEOS.2007.4382689","url":null,"abstract":"The requirements driving the development of complex optical modulator structures are discussed, and approaches towards integration with InP technology described.","PeriodicalId":110592,"journal":{"name":"LEOS 2007 - IEEE Lasers and Electro-Optics Society Annual Meeting Conference Proceedings","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-11-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115647465","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
High Power Pulse Compression with Soliton Delivery in Hollow-Core Photonic Bandgap Fiber 空芯光子带隙光纤中具有孤子传输的高功率脉冲压缩
LEOS 2007 - IEEE Lasers and Electro-Optics Society Annual Meeting Conference Proceedings Pub Date : 2007-11-12 DOI: 10.1109/LEOS.2007.4382524
F. Gérôme, Jonathan C. Knight, J. Clowes, William J. Wadsworth
{"title":"High Power Pulse Compression with Soliton Delivery in Hollow-Core Photonic Bandgap Fiber","authors":"F. Gérôme, Jonathan C. Knight, J. Clowes, William J. Wadsworth","doi":"10.1109/LEOS.2007.4382524","DOIUrl":"https://doi.org/10.1109/LEOS.2007.4382524","url":null,"abstract":"Compression of chirped input pulses results in soliton propagation in hollow-core photonic bandgap fibers. 5.5 ps input pulses from a fiber laser at 1064 nm were compressed to 520 fs in 8 m of fiber, at 150 nJ pulse energies.","PeriodicalId":110592,"journal":{"name":"LEOS 2007 - IEEE Lasers and Electro-Optics Society Annual Meeting Conference Proceedings","volume":"61 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-11-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117218760","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Compression of Femtosecond Solitons in 8m of Tapered Hollow-Core Photonic Bandgap Fiber 飞秒孤子在8米锥形空心光子带隙光纤中的压缩
LEOS 2007 - IEEE Lasers and Electro-Optics Society Annual Meeting Conference Proceedings Pub Date : 2007-11-12 DOI: 10.1109/LEOS.2007.4382527
F. Gérôme, K. Cook, A. George, W. Wadsworth, J. Knight
{"title":"Compression of Femtosecond Solitons in 8m of Tapered Hollow-Core Photonic Bandgap Fiber","authors":"F. Gérôme, K. Cook, A. George, W. Wadsworth, J. Knight","doi":"10.1109/LEOS.2007.4382527","DOIUrl":"https://doi.org/10.1109/LEOS.2007.4382527","url":null,"abstract":"We report adiabatic soliton pulse compression in a tapered hollow-core photonic bandgap fiber. We compress 195 fs input pulses at 800 nm wavelength to less than 100 fs after propagation through 8 m of fiber, at 50 nJ pulse energies.","PeriodicalId":110592,"journal":{"name":"LEOS 2007 - IEEE Lasers and Electro-Optics Society Annual Meeting Conference Proceedings","volume":"19 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-11-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127105290","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Integrated InGaAs pin-diode on exactly oriented silicon (001) substrate suitable for 10 Gbit/s digital applications 精确定向硅(001)衬底上集成InGaAs引脚二极管，适用于10 Gbit/s数字应用
LEOS 2007 - IEEE Lasers and Electro-Optics Society Annual Meeting Conference Proceedings Pub Date : 2007-11-12 DOI: 10.1109/LEOS.2007.4382336
A. Poloczek, M. Weiss, S. Fedderwitz, A. Stoehr, W. Prost, D. Jaeger, F. Tegude
{"title":"Integrated InGaAs pin-diode on exactly oriented silicon (001) substrate suitable for 10 Gbit/s digital applications","authors":"A. Poloczek, M. Weiss, S. Fedderwitz, A. Stoehr, W. Prost, D. Jaeger, F. Tegude","doi":"10.1109/LEOS.2007.4382336","DOIUrl":"https://doi.org/10.1109/LEOS.2007.4382336","url":null,"abstract":"An InGaAs pin-diode has been grown on (001) Si- substrate overcoming the lattice mismatch by introducing an III/V-quasi-buffer. The device high speed performance is demonstrated by BER measurements up to 10 Gbit/s.","PeriodicalId":110592,"journal":{"name":"LEOS 2007 - IEEE Lasers and Electro-Optics Society Annual Meeting Conference Proceedings","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-11-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127248809","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 8
Semiconductor Nanowire Lasers 半导体纳米线激光器
LEOS 2007 - IEEE Lasers and Electro-Optics Society Annual Meeting Conference Proceedings Pub Date : 2007-11-12 DOI: 10.1109/LEOS.2007.4382665
Fang Qian, C. Lieber
{"title":"Semiconductor Nanowire Lasers","authors":"Fang Qian, C. Lieber","doi":"10.1109/LEOS.2007.4382665","DOIUrl":"https://doi.org/10.1109/LEOS.2007.4382665","url":null,"abstract":"Semiconductor nanowires can function as both gain medium and optical cavity, and thus represent a unique class of miniaturized laser sources for the assembly of nanoscale photonic systems. In this talk we will review the rational design and synthesis of nanowires and nanowire heterostructures as laser sources, describe how their structure design interplays with optical properties, and discuss exciting device applications. Group III-nitride nanowire structures will be used as a model system to illustrate our approach towards nanowire lasers. First, the general synthetic strategy for rational growth of semiconductor nanowires and the underlying physical mechanism of lasing in these materials will be reviewed. Second, structural characterization and photoluminescence studies of homogeneous GaN nanowires will be discussed. These studies will illuminate how basic structural characteristics affect threshold for ultraviolet room-temperature lasing in these homogeneous structures. Third, multicolor nanowire lasers based on InGaN multi-quantum well (MQW) radial nanowire heterostructures will be described. Cross-sectional transmission electron microscopy studies allow direct visualization of well-defined internal interfaces and demonstrate our ability to control quantum well growth down to atomic level. These functional nanowire structures were optically pumped individually to lasing from 380 to 494 nm at room temperature, depending on the alloy composition of MQWs. Key factors contributing to the lasing threshold were evaluated by three-dimensional finite-difference time-domain calculations. Last, current injection schemes for electrically-driven nanowire light-emitting diodes/lasers with the emphasis on n-GaN/InGaN MQW/p-AlGaN/p-GaN radial nanowire heterostructures will be discussed.","PeriodicalId":110592,"journal":{"name":"LEOS 2007 - IEEE Lasers and Electro-Optics Society Annual Meeting Conference Proceedings","volume":"45 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-11-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126123395","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 82
High Gain 1300 nm Quantum Dot Lasers 高增益1300nm量子点激光器
LEOS 2007 - IEEE Lasers and Electro-Optics Society Annual Meeting Conference Proceedings Pub Date : 2007-11-12 DOI: 10.1109/LEOS.2007.4382461
A. Passaseo, A. Salhi, M. Todaro, L. Fortunato, V. Tasco, M. de Vittorio
{"title":"High Gain 1300 nm Quantum Dot Lasers","authors":"A. Passaseo, A. Salhi, M. Todaro, L. Fortunato, V. Tasco, M. de Vittorio","doi":"10.1109/LEOS.2007.4382461","DOIUrl":"https://doi.org/10.1109/LEOS.2007.4382461","url":null,"abstract":"In this work, we show that a modal gain as high as 42cm-1 could be achieved from a device containing 7 InAs/InGaAs stacked QD layers. The enhancement of the modal gain is accompanied by a decrease of the threshold and transparency current densities per QD layer down to 16 and 7 A cm-2, respectively. Moreover, a linear increase of the modal gain with the number of QD layers is observed. The obtained high modal gain allows us to achieve good temperature stability and high-speed operation in a wide temperature range. Modulation eye diagrams under 10 Gb/s are achieved in 15degC-50degC range in a single- transverse mode 1.3mum QD lasers. High characteristic temperature of about 110 K between 15degC and 85degC are reported.","PeriodicalId":110592,"journal":{"name":"LEOS 2007 - IEEE Lasers and Electro-Optics Society Annual Meeting Conference Proceedings","volume":"78 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-11-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126859822","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Second Harmonic and Sum Frequency Generation in Sub-Micron 3D Photonic Crystal Microcavities 亚微米三维光子晶体微腔中二次谐波和和频的产生
LEOS 2007 - IEEE Lasers and Electro-Optics Society Annual Meeting Conference Proceedings Pub Date : 2007-11-12 DOI: 10.1109/LEOS.2007.4382594
J. F. Young, M. Mccutcheon, G. Rieger, D. Dalacu, S. Frederick, P. Poole, Robin L. Williams
{"title":"Second Harmonic and Sum Frequency Generation in Sub-Micron 3D Photonic Crystal Microcavities","authors":"J. F. Young, M. Mccutcheon, G. Rieger, D. Dalacu, S. Frederick, P. Poole, Robin L. Williams","doi":"10.1109/LEOS.2007.4382594","DOIUrl":"https://doi.org/10.1109/LEOS.2007.4382594","url":null,"abstract":"The second harmonic radiation emitted into the top half space from three dimensionally localized modes of L3 defect cavities in InP-based planar photonic crystals is studied using both CW and pulsed excitation. The far field harmonic radiation patterns observed from modes with resonant wavelengths ~ 1550 nm, excited by a tunable CW laser with less than 1 mW power, reveal strong local field enhancement (> 1000 X). A detailed comparison with FDTD modeling allows us to conclude that the bulk InP second order susceptibility tensor dominates the second order response of these microcavities. When a broadband, sub picoseconds source is used to simultaneously excite two of the microcavity modes, the harmonic spectrum in general consists of three contributions, the second harmonic from each of the excited modes, and a third peak due to the second order (sum frequency) mixing of the two modes. By using short and long pulse excitation simultaneously, we demonstrate how the emission frequency due to sum frequency processes can be used to continuously tune the harmonic emission frequency dependent on the occupation of various cavity modes.","PeriodicalId":110592,"journal":{"name":"LEOS 2007 - IEEE Lasers and Electro-Optics Society Annual Meeting Conference Proceedings","volume":"27 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-11-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115322707","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
下一页 尾页
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整，为了账户安全，请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
请完成安全验证×
相关产品
×
本文献相关产品
联系我们：info@booksci.cn Book学术提供免费学术资源搜索服务，方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号：481959085
Book学术官方微信