{"title":"集成光学器件的室温直接键合","authors":"R. Takei, K. Abe, T. Mizumoto","doi":"10.1109/INOW.2008.4634511","DOIUrl":null,"url":null,"abstract":"We report a room-temperature direct bonding technique for wafer combinations of InP-Ce:YIG, Si-InP and Si-LiNbO3. This technique is versatile for integrating optical devices that are composed of different crystals.","PeriodicalId":110592,"journal":{"name":"LEOS 2007 - IEEE Lasers and Electro-Optics Society Annual Meeting Conference Proceedings","volume":"258 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2008-09-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":"{\"title\":\"Room-Temperature Direct Bonding for Integrated Optical Devices\",\"authors\":\"R. Takei, K. Abe, T. Mizumoto\",\"doi\":\"10.1109/INOW.2008.4634511\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We report a room-temperature direct bonding technique for wafer combinations of InP-Ce:YIG, Si-InP and Si-LiNbO3. This technique is versatile for integrating optical devices that are composed of different crystals.\",\"PeriodicalId\":110592,\"journal\":{\"name\":\"LEOS 2007 - IEEE Lasers and Electro-Optics Society Annual Meeting Conference Proceedings\",\"volume\":\"258 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2008-09-26\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"3\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"LEOS 2007 - IEEE Lasers and Electro-Optics Society Annual Meeting Conference Proceedings\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/INOW.2008.4634511\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"LEOS 2007 - IEEE Lasers and Electro-Optics Society Annual Meeting Conference Proceedings","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/INOW.2008.4634511","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Room-Temperature Direct Bonding for Integrated Optical Devices
We report a room-temperature direct bonding technique for wafer combinations of InP-Ce:YIG, Si-InP and Si-LiNbO3. This technique is versatile for integrating optical devices that are composed of different crystals.