Integrated InGaAs pin-diode on exactly oriented silicon (001) substrate suitable for 10 Gbit/s digital applications

LEOS 2007 - IEEE Lasers and Electro-Optics Society Annual Meeting Conference Proceedings Pub Date : 2007-11-12 DOI:10.1109/LEOS.2007.4382336

A. Poloczek, M. Weiss, S. Fedderwitz, A. Stoehr, W. Prost, D. Jaeger, F. Tegude

引用次数: 8

Abstract

An InGaAs pin-diode has been grown on (001) Si- substrate overcoming the lattice mismatch by introducing an III/V-quasi-buffer. The device high speed performance is demonstrated by BER measurements up to 10 Gbit/s.

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精确定向硅(001)衬底上集成InGaAs引脚二极管，适用于10 Gbit/s数字应用

在(001)Si衬底上生长了InGaAs引脚二极管，通过引入III/ v准缓冲器克服了晶格失配。通过高达10gbit /s的误码率测量，证明了该器件的高速性能。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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LEOS 2007 - IEEE Lasers and Electro-Optics Society Annual Meeting Conference Proceedings

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