A. Passaseo, A. Salhi, M. Todaro, L. Fortunato, V. Tasco, M. de Vittorio
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引用次数: 0
摘要
在这项工作中,我们证明了一个包含7个InAs/InGaAs堆叠QD层的器件可以实现高达42cm-1的模态增益。模态增益的增强伴随着阈值和透明电流密度的降低,每个QD层分别降至16和7 a cm-2。此外,模态增益随量子点阵层数线性增加。获得的高模态增益使我们能够在较宽的温度范围内实现良好的温度稳定性和高速运行。在单横模1.3 μ m QD激光器中,在15°c -50°c范围内实现了10 Gb/s的调制眼图。在15℃~ 85℃之间有110 K左右的高特征温度。
In this work, we show that a modal gain as high as 42cm-1 could be achieved from a device containing 7 InAs/InGaAs stacked QD layers. The enhancement of the modal gain is accompanied by a decrease of the threshold and transparency current densities per QD layer down to 16 and 7 A cm-2, respectively. Moreover, a linear increase of the modal gain with the number of QD layers is observed. The obtained high modal gain allows us to achieve good temperature stability and high-speed operation in a wide temperature range. Modulation eye diagrams under 10 Gb/s are achieved in 15degC-50degC range in a single- transverse mode 1.3mum QD lasers. High characteristic temperature of about 110 K between 15degC and 85degC are reported.