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Temperature Dependence of Structural and Transport Properties of Less- Simple Liquid Metals 较不简单液态金属结构和输运性质的温度依赖性
Day 1 Wed, February 23, 2022 Pub Date : 1986-12-31 DOI: 10.1515/9783112493182-011
S. Rahman, Dipak K. Sarker
{"title":"Temperature Dependence of Structural and Transport Properties of Less- Simple Liquid Metals","authors":"S. Rahman, Dipak K. Sarker","doi":"10.1515/9783112493182-011","DOIUrl":"https://doi.org/10.1515/9783112493182-011","url":null,"abstract":"","PeriodicalId":10913,"journal":{"name":"Day 1 Wed, February 23, 2022","volume":"128 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"1986-12-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"79564072","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Power Law Localization in One-Dimensional Random Potentials 一维随机电位的幂律局部化
Day 1 Wed, February 23, 2022 Pub Date : 1986-12-31 DOI: 10.1515/9783112493182-053
A. Brézini, M. Sebbani
{"title":"Power Law Localization in One-Dimensional Random Potentials","authors":"A. Brézini, M. Sebbani","doi":"10.1515/9783112493182-053","DOIUrl":"https://doi.org/10.1515/9783112493182-053","url":null,"abstract":"","PeriodicalId":10913,"journal":{"name":"Day 1 Wed, February 23, 2022","volume":"77 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"1986-12-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"76835988","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
About Critical Condition of the Ising and Potts Model on the Pentagon Lattice 关于五边形格上Ising和Potts模型的临界条件
Day 1 Wed, February 23, 2022 Pub Date : 1986-12-31 DOI: 10.1515/9783112493182-046
D. Hajdukovic, L. Maurer
{"title":"About Critical Condition of the Ising and Potts Model on the Pentagon Lattice","authors":"D. Hajdukovic, L. Maurer","doi":"10.1515/9783112493182-046","DOIUrl":"https://doi.org/10.1515/9783112493182-046","url":null,"abstract":"","PeriodicalId":10913,"journal":{"name":"Day 1 Wed, February 23, 2022","volume":"72 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"1986-12-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"90473440","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
EPR of Nd3+ Ions in Y-Type Zeolites y型沸石中Nd3+离子的EPR
Day 1 Wed, February 23, 2022 Pub Date : 1986-12-31 DOI: 10.1515/9783112493182-029
E. Trif, A. Nicula
{"title":"EPR of Nd3+ Ions in Y-Type Zeolites","authors":"E. Trif, A. Nicula","doi":"10.1515/9783112493182-029","DOIUrl":"https://doi.org/10.1515/9783112493182-029","url":null,"abstract":"","PeriodicalId":10913,"journal":{"name":"Day 1 Wed, February 23, 2022","volume":"139 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"1986-12-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"79858516","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
The Influence of Nonparabolicity on Self-Consistent Treatment for GaAs-Al x Ga 1-x As Heterojunction 非抛物性对GaAs-Al x ga1 -x As异质结自洽处理的影响
Day 1 Wed, February 23, 2022 Pub Date : 1986-12-31 DOI: 10.1515/9783112493182-040
V. Milanovic, D. Tjapkin, R. Šašić
{"title":"The Influence of Nonparabolicity on Self-Consistent Treatment for GaAs-Al x Ga 1-x As Heterojunction","authors":"V. Milanovic, D. Tjapkin, R. Šašić","doi":"10.1515/9783112493182-040","DOIUrl":"https://doi.org/10.1515/9783112493182-040","url":null,"abstract":"","PeriodicalId":10913,"journal":{"name":"Day 1 Wed, February 23, 2022","volume":"50 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"1986-12-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"86770347","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Curved Flux Line Effects in a Type-II Superconducting Hollow Cylinder ii型超导空心圆筒中的弯曲通量线效应
Day 1 Wed, February 23, 2022 Pub Date : 1986-02-01 DOI: 10.1002/PSSB.2221330233
L. N. Shehata, T. Refai
{"title":"Curved Flux Line Effects in a Type-II Superconducting Hollow Cylinder","authors":"L. N. Shehata, T. Refai","doi":"10.1002/PSSB.2221330233","DOIUrl":"https://doi.org/10.1002/PSSB.2221330233","url":null,"abstract":"Magnetic fields created by curved or straight flux lines as well as the magnetic fields within a type-II superconducting hollow cylinder are presented for the case when an external field is applied within the hollow region. In order to verify the theoretical calculations and to measure especially the stray field an experimental set-up is proposed that can also be used to measure the effect of a sharp edge on field intensity. \u0000 \u0000 \u0000 \u0000Die Magnetfelder, die durch gekrummte oder gerade Fluslinien erzeugt werden, sowie die Magnetfelder im Inneren eines Supraleiters vom Typ II werden fur den Fall, das ein auseres Feld im Hohlraum existiert, angegeben. Um die theoretischen Berechnungen zu uberprufen und speziell das Streufeld zu messen, wird eine experimentelle Anordnung vorgeschlagen, die auch fur die Messung des Effekts einer scharfen Kante auf die Feldintensitat benutzt werden kann.","PeriodicalId":10913,"journal":{"name":"Day 1 Wed, February 23, 2022","volume":"5 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"1986-02-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"89308956","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
The Origin of the Minority Impurity States in Heavily Doped Semiconductors 重掺杂半导体中少数杂质态的起源
Day 1 Wed, February 23, 2022 Pub Date : 1986-02-01 DOI: 10.1002/PSSB.2221330231
D. S. Domanevskii, V. V. Krasovskii, M. V. Prokopenya, V. A. Vilkotskii, S. V. Zhokhovets
{"title":"The Origin of the Minority Impurity States in Heavily Doped Semiconductors","authors":"D. S. Domanevskii, V. V. Krasovskii, M. V. Prokopenya, V. A. Vilkotskii, S. V. Zhokhovets","doi":"10.1002/PSSB.2221330231","DOIUrl":"https://doi.org/10.1002/PSSB.2221330231","url":null,"abstract":"The influence is examined of growth conditions of heavily doped n-type semiconductors on the width and energy position of Gaussian-shape impurity band where non-equilibrium holes are localized. The energy levels of the impurity band are shown to be caused by associations of oppositely charged crystal imperfections (so-called associates) including several shallow donor impurity atoms and a deep structural defect. The reason of Gaussian broadening of these states is a random spatial arrangement of associated imperfections about each other within a given associate. \u0000 \u0000 \u0000 \u0000[Russian Text Ignored].","PeriodicalId":10913,"journal":{"name":"Day 1 Wed, February 23, 2022","volume":"168 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"1986-02-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"77397068","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Theoretical Analysis of the Chemical Activivity of Noble Gas Atoms in Silicon 硅中稀有气体原子化学活性的理论分析
Day 1 Wed, February 23, 2022 Pub Date : 1986-02-01 DOI: 10.1002/PSSB.2221330208
S. G. Gagarin, A. Mudryi, A. Pushkarchuk, A. Ulyashin, Y. Teterin
{"title":"Theoretical Analysis of the Chemical Activivity of Noble Gas Atoms in Silicon","authors":"S. G. Gagarin, A. Mudryi, A. Pushkarchuk, A. Ulyashin, Y. Teterin","doi":"10.1002/PSSB.2221330208","DOIUrl":"https://doi.org/10.1002/PSSB.2221330208","url":null,"abstract":"The possibility of formation of a chemical bond between noble gas atoms (Ne, Ar), ion-implanted into silicon, and matrix atoms is treated theoretically in a cluster representation using both, the scattered-wave Xα (SW-Xα) and complete, neglect of differential overlap (CNDO/2) electronic structure methods. It is shown that the presence of noble gas atoms in the silicon lattice results in formation of inner valence molecular orbitals (MO) when Ar and Ne atoms interact with Si atoms. A theoretical analysis is made of the results of possible investigations of these structures by photo-electron spectroscopy measurements. \u0000 \u0000 \u0000 \u0000[Russian Text Ignored].","PeriodicalId":10913,"journal":{"name":"Day 1 Wed, February 23, 2022","volume":"10 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"1986-02-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"85997608","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
The Ligand Field on dn Ions in a Strained Corundum Crystal 刚玉晶体中n离子的配体场
Day 1 Wed, February 23, 2022 Pub Date : 1986-02-01 DOI: 10.1002/PSSB.2221330228
R. Lacroix
{"title":"The Ligand Field on dn Ions in a Strained Corundum Crystal","authors":"R. Lacroix","doi":"10.1002/PSSB.2221330228","DOIUrl":"https://doi.org/10.1002/PSSB.2221330228","url":null,"abstract":"The ligand field Hamiltonian for a d electron in a transition metal doping a strained corundum crystal is worked out in the frame of a cluster model. The formulation makes explicit reference to the inner elasticity constants and allows the Hamiltonian to be used as well from the covalent point of view as in the point charge model. \u0000 \u0000 \u0000 \u0000Considerant le champ des ligandes agissant sur un electron d d'un ion de transition incorpore dans un cristal de corindon deforme elastiquement, on a calcule l'hamiltonien de deformation dans le cadre d'un modele de premiers voisins. L'expression qui en resulte tient compte explicitement des constantes d'elasticite interne et est compatible aussi bien avec un modele covalent qu'avec celui de charges ponctuelles.","PeriodicalId":10913,"journal":{"name":"Day 1 Wed, February 23, 2022","volume":"31 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"1986-02-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"75795390","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
On the Defecton Statistics in Quantum Crystals 量子晶体中的缺陷统计
Day 1 Wed, February 23, 2022 Pub Date : 1986-02-01 DOI: 10.1002/PSSB.2221330212
D. Pushkarov
{"title":"On the Defecton Statistics in Quantum Crystals","authors":"D. Pushkarov","doi":"10.1002/PSSB.2221330212","DOIUrl":"https://doi.org/10.1002/PSSB.2221330212","url":null,"abstract":"The defecton statistics in quantum crystals is treated, and a new method for determining commutation relations is proposed. Defectons related to defects of a different kind (vacancies, impurities, interstitials) are considered in crystals both of the Bose-type (4He) and Fermi-type (3He). The kinematic interaction is discussed. \u0000 \u0000 \u0000 \u0000Es wird die Statistik von Defektonen in Quantenkristallen behandelt und eine neue Methode zur Bestimmung der Vertauschungsrelationen vorgeschlagen. Defektonen, hervorgerufen durch ver-schiedenartige Defekte (Leerstellen, Verunreinigungen. Zwischengitteratome), werden sowohl fur Kristalle vom Bose-Typ (4He) als auch fur Kristalle vom Fermi-Typ (2He) betrachtet. Die kine-matische Wechselwirkung wird diskutiert.","PeriodicalId":10913,"journal":{"name":"Day 1 Wed, February 23, 2022","volume":"14 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"1986-02-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"79527038","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 12
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