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Linear Density Response at the Metal Surface in the Hydrodynamic Approximation 流体力学近似下金属表面的线性密度响应
Day 1 Wed, February 23, 2022 Pub Date : 1986-02-01 DOI: 10.1002/PSSB.2221330225
T. T. Bao
{"title":"Linear Density Response at the Metal Surface in the Hydrodynamic Approximation","authors":"T. T. Bao","doi":"10.1002/PSSB.2221330225","DOIUrl":"https://doi.org/10.1002/PSSB.2221330225","url":null,"abstract":"The density response of a jellium surface to external charge and potential perturbations is derived within the hydrodynamic approximation. Retardation effects, damping, and spatial dispersion are included. Results agree with those of Schaich, and in the non-retarded limit with correct results of Das Sarma and Quinn. The density–potential reponse function, which gives information on inelastic scattering experiment, is explicitly given in the two-step density model. Dispersion of the surface modes are also discussed in this model. \u0000 \u0000 \u0000 \u0000Die Dichteresponse einer Jellium-Oberflache auf ausere Dichte- und Potentialstorungen wird im Rahmen der hydrodynamischen Naherung hergeleitet. Retardierte Effekte, Dampfung und raumliche Dispersion werden berucksichtigt. Die Ergebnisse stimmen mit denen von Schaich und im nichtretardierten Grenzfall mit den korrekten Ergebnissen von Das Sarma und Quinn uberein. Die Dichte–Potential-Responsefunktion, die Information im Experiment uber inelastische Streuung liefert, wird im Zwei-Stufen-Dichte-Modell explizit angegeben. Die Dispersion der Oberflachenmoden wird ebenfalls in diesem Modell diskutiert.","PeriodicalId":10913,"journal":{"name":"Day 1 Wed, February 23, 2022","volume":"84 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"1986-02-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"72748892","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
Calculation of Electron Velocity in Crystal ab Initio. Results of Computation by Green's Function Method for Vanadium 晶体中电子速度的从头计算。钒的格林函数法计算结果
Day 1 Wed, February 23, 2022 Pub Date : 1986-02-01 DOI: 10.1002/PSSB.2221330220
V. P. Shirokovskii, N. A. Shilkova, N. A. Trubitsina
{"title":"Calculation of Electron Velocity in Crystal ab Initio. Results of Computation by Green's Function Method for Vanadium","authors":"V. P. Shirokovskii, N. A. Shilkova, N. A. Trubitsina","doi":"10.1002/PSSB.2221330220","DOIUrl":"https://doi.org/10.1002/PSSB.2221330220","url":null,"abstract":"Using the Hellman-Feynman theorem and the perturbation theory for the matrix, an expression for the electron velocity in crystals is derived. Calculations are carried out on a mesh of 55 points in 1/48 th of the b.c.c. Brillouin zone for six energy bands of vanadium. The comparison with the data of numerical differentiation demonstrates the excellent accuracy of the technique presented. The influence of higher angular-momentum terms in the expansion of the wave function on the velocity value is discussed. \u0000 \u0000 \u0000 \u0000[Russian Text Ignored].","PeriodicalId":10913,"journal":{"name":"Day 1 Wed, February 23, 2022","volume":"34 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"1986-02-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"74079938","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
Off-Diagonal Conductivity and Magnetization of PdFe, PdCo, and PdNi Alloys in Coherent Potential Approximation Calculated on the Basis of Realistic Models of Component Densities of States PdFe、PdCo和PdNi合金的非对角线电导率和磁化强度在相干电位近似下的计算
Day 1 Wed, February 23, 2022 Pub Date : 1986-02-01 DOI: 10.1002/PSSB.2221330236
A. Voloshinskii, N. Ryzhanova, L. Y. Vishnekov, A. Obukhov
{"title":"Off-Diagonal Conductivity and Magnetization of PdFe, PdCo, and PdNi Alloys in Coherent Potential Approximation Calculated on the Basis of Realistic Models of Component Densities of States","authors":"A. Voloshinskii, N. Ryzhanova, L. Y. Vishnekov, A. Obukhov","doi":"10.1002/PSSB.2221330236","DOIUrl":"https://doi.org/10.1002/PSSB.2221330236","url":null,"abstract":"The concentration dependence of the off-diagonal component of the electroconductivity tensor and that of the average magnetic moment are calculated for PdFe, PdCo, and PdNi alloys in the coherent potential approximation (CPA). These calculations are based on realistic models of the component densities of states (DOS's). Experimental and theoretical results are compared. \u0000 \u0000 \u0000 \u0000[Russian Text Ignored].","PeriodicalId":10913,"journal":{"name":"Day 1 Wed, February 23, 2022","volume":"218 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"1986-02-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"75619226","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Effect of Thin Space-Charge Layers on Exciton Reflectance 薄空间电荷层对激子反射率的影响
Day 1 Wed, February 23, 2022 Pub Date : 1986-02-01 DOI: 10.1002/PSSB.2221330218
V. Kiselev, B. Novikov, A. Cherednichenko, E. A. Ubushiev
{"title":"Effect of Thin Space-Charge Layers on Exciton Reflectance","authors":"V. Kiselev, B. Novikov, A. Cherednichenko, E. A. Ubushiev","doi":"10.1002/PSSB.2221330218","DOIUrl":"https://doi.org/10.1002/PSSB.2221330218","url":null,"abstract":"Resonance reflectance in semiconductors in the frequency region of exciton transitions depends strongly on characteristics of the near-surface space-charge layers. It is shown by numerical computation that the majority of the exciton reflection lineshapes observed on CdS earlier may be explained by the presence of a thin (10 to 100 nm) space-charge layer with a relatively high (104 to 105 V/cm) surface electric field. Various treatments of surfaces alter charges on and below them thus modifying the electric field distribution. The latter causes changes in the exciton reflectance. Transformations of the exciton lineshapes under the action of illumination and electron bombardment are discussed in detail for the case of CdS. The lineshapes show drastic variations with expositions of both influences. In a single experiment one may observe all of the anomalies typical for the thin space-charge layers. \u0000 \u0000 \u0000 \u0000[Russian Text Ignored].","PeriodicalId":10913,"journal":{"name":"Day 1 Wed, February 23, 2022","volume":"30 2 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"1986-02-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"78185832","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 6
Quantum Theory of Free-Carrier Absorption in Quasi-Two-Dimensional Semiconducting Structures 准二维半导体结构中自由载流子吸收的量子理论
Day 1 Wed, February 23, 2022 Pub Date : 1986-02-01 DOI: 10.1002/PSSB.2221330217
C. Giner, M. Antón
{"title":"Quantum Theory of Free-Carrier Absorption in Quasi-Two-Dimensional Semiconducting Structures","authors":"C. Giner, M. Antón","doi":"10.1002/PSSB.2221330217","DOIUrl":"https://doi.org/10.1002/PSSB.2221330217","url":null,"abstract":"The quantum theory of free carrier absorption in quasi-two-dimensional structures like thin films, layered heterojunctions, and inversion layers is generalized to the cases when the carriers are scattered by polar optical phonons, piezoelectric phonons, and nonpolar optical phonons. The obtained results are compared with those of the quantum theory of free-carrier absorption in a bulk semiconductor and it is found that the absorption coefficient increases when the width of the layer or thin film decreases in all the cases. \u0000 \u0000 \u0000 \u0000Die Quantentheorie der Absorption freier Trager in quasi-zweidimensionalen Strukturen, wie duinnen Schichten, geschichteten Heterouibergangen und Inversionsschichten, wird auf die Falle verallgemeinert, wo die Trager durch polare optische Phononen, piezoelektrische Phononen und nichtpolare optische Phononen gestreut werden. Die erhaltenen Ergebnisse werden mit denen der Quantentheorie der Absorption freier Trager in einem Volumenhalbleiter verglichen, und es wird gefunden, das der Absorptionskoeffizient anwachst, wenn in alien Fallen die Breite der Schicht oder des duinnen Films abnimmt.","PeriodicalId":10913,"journal":{"name":"Day 1 Wed, February 23, 2022","volume":"1 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"1986-02-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"90250188","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 14
A Projective Procedure for Embedding a Finite Cluster in an Effective Medium 在有效介质中嵌入有限簇的投影方法
Day 1 Wed, February 23, 2022 Pub Date : 1986-02-01 DOI: 10.1002/PSSB.2221330248
G. Grosso, G. Parravicini
{"title":"A Projective Procedure for Embedding a Finite Cluster in an Effective Medium","authors":"G. Grosso, G. Parravicini","doi":"10.1002/PSSB.2221330248","DOIUrl":"https://doi.org/10.1002/PSSB.2221330248","url":null,"abstract":"","PeriodicalId":10913,"journal":{"name":"Day 1 Wed, February 23, 2022","volume":"10 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"1986-02-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"78965796","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
A CBLM Approach to the Electronic Structure of Transition Metal Impurities in Silicon 硅中过渡金属杂质电子结构的CBLM方法
Day 1 Wed, February 23, 2022 Pub Date : 1986-02-01 DOI: 10.1002/PSSB.2221330249
S. Wilke, J. Masek, B. Velicky
{"title":"A CBLM Approach to the Electronic Structure of Transition Metal Impurities in Silicon","authors":"S. Wilke, J. Masek, B. Velicky","doi":"10.1002/PSSB.2221330249","DOIUrl":"https://doi.org/10.1002/PSSB.2221330249","url":null,"abstract":"La structure electronique de ces elements dans Si est decrite par une methode parametrisee de reseau de Bethe d'amas a liaisons fortes. Cette methode est basee sur la description explicite d'un amas representant un site interstitiel tetraedrique typique du silicium","PeriodicalId":10913,"journal":{"name":"Day 1 Wed, February 23, 2022","volume":"321 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"1986-02-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"80252912","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Linearised Screened Pseudopotential and Superconducting State Parameters of a Number of Metals 几种金属的线性化屏蔽赝势和超导态参数
Day 1 Wed, February 23, 2022 Pub Date : 1986-02-01 DOI: 10.1002/PSSB.2221330232
Renu Sharma, K. S. Sharma, L. Dass
{"title":"Linearised Screened Pseudopotential and Superconducting State Parameters of a Number of Metals","authors":"Renu Sharma, K. S. Sharma, L. Dass","doi":"10.1002/PSSB.2221330232","DOIUrl":"https://doi.org/10.1002/PSSB.2221330232","url":null,"abstract":"A linearised form for the screened form factors of electron-ion interaction is proposed and applied for the prediction of superconducting state parameters viz. electron-phonon coupling strength λ, Coulomb pseudopotential μ*, transition temperature Tc, isotope effect exponent α, and the interaction strength N0V. Good agreement between the computed results, experimental data, and the results of Allen and Cohen based on the HA potential, supports the proposition. Es wird eine linearisierte Form fur die abgeschirmten Formfaktoren der Elektronen-Ionen-Wechselwirkung vorgeschlagen. Sie wird fur die Vorhersage der Parameter des Supraleitungs-zustandes, z.B. der Elektronen-Phononen-Kopplungsstarke λ, des Coulombpseudopotentials μ*, der Ubergangstemperatur Tc, dem Exponenten α des Isotopeneffekts und der Wechselwirkungsstarke N0V, benutzt. Die gute Ubereinstimmung zwischen den erhaltenen Ergebnissen, experimentellen Werten und den Ergebnissen von Allen und Cohen auf der Grundlage des HA-Potentials, bestatigt den Vorschlag.","PeriodicalId":10913,"journal":{"name":"Day 1 Wed, February 23, 2022","volume":"23 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"1986-02-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"76152092","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 14
Computer Simulation of Proton Channeling Catch-Up in Bent Crystals 弯曲晶体中质子通道追赶的计算机模拟
Day 1 Wed, February 23, 2022 Pub Date : 1986-02-01 DOI: 10.1002/PSSB.2221330210
A. Taratin, S. A. Vorobiev
{"title":"Computer Simulation of Proton Channeling Catch-Up in Bent Crystals","authors":"A. Taratin, S. A. Vorobiev","doi":"10.1002/PSSB.2221330210","DOIUrl":"https://doi.org/10.1002/PSSB.2221330210","url":null,"abstract":"A detailed computer simulation of the catch-up effect for a 1 GeV proton beam in a uniformly bent silicon crystal is performed. The dependences of the efficiency of proton catch-up in the channeling regime on bending radius of the crystal and on incidence angle of the beam are reported. \u0000 \u0000 \u0000 \u0000[Russian Text Ignored].","PeriodicalId":10913,"journal":{"name":"Day 1 Wed, February 23, 2022","volume":"22 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"1986-02-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"84603175","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
Temperature Effect on the Elastic Stiffness Constants of Al 温度对铝弹性刚度常数的影响
Day 1 Wed, February 23, 2022 Pub Date : 1986-02-01 DOI: 10.1002/PSSB.2221330243
T. Soma, K. Wada, H. Kagaya
{"title":"Temperature Effect on the Elastic Stiffness Constants of Al","authors":"T. Soma, K. Wada, H. Kagaya","doi":"10.1002/PSSB.2221330243","DOIUrl":"https://doi.org/10.1002/PSSB.2221330243","url":null,"abstract":"","PeriodicalId":10913,"journal":{"name":"Day 1 Wed, February 23, 2022","volume":"411 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"1986-02-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"79926336","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
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