弯曲晶体中质子通道追赶的计算机模拟

Day 1 Wed, February 23, 2022 Pub Date : 1986-02-01 DOI:10.1002/PSSB.2221330210

A. Taratin, S. A. Vorobiev

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引用次数: 4

摘要

对均匀弯曲硅晶体中1 GeV质子束的追赶效应进行了详细的计算机模拟。本文报道了质子追赶效率与晶体弯曲半径和光束入射角的关系。[忽略俄语文本]。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Computer Simulation of Proton Channeling Catch-Up in Bent Crystals

A detailed computer simulation of the catch-up effect for a 1 GeV proton beam in a uniformly bent silicon crystal is performed. The dependences of the efficiency of proton catch-up in the channeling regime on bending radius of the crystal and on incidence angle of the beam are reported. [Russian Text Ignored].

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Day 1 Wed, February 23, 2022

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