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2007 8th Siberian Russian Workshop and Tutorial on Electron Devices and Materials最新文献

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Femtosecond Pulse Focusing by Means of Diffractive Elements on Tapered Surface 锥形表面衍射元件的飞秒脉冲聚焦
2007 8th Siberian Russian Workshop and Tutorial on Electron Devices and Materials Pub Date : 2007-08-20 DOI: 10.1109/SIBEDM.2007.4292951
D.O. Golodnikov, I. Minin, O. Minin
{"title":"Femtosecond Pulse Focusing by Means of Diffractive Elements on Tapered Surface","authors":"D.O. Golodnikov, I. Minin, O. Minin","doi":"10.1109/SIBEDM.2007.4292951","DOIUrl":"https://doi.org/10.1109/SIBEDM.2007.4292951","url":null,"abstract":"A diffractive elements (DOE) on the tapered surface, providing minimum time delay between wave and pulse fronts are described. Equations for calculating value of focal depth expansion and working band of DOE on the tapered surface with different phase quantification level and number of Fresnel sub zones are also described.","PeriodicalId":106151,"journal":{"name":"2007 8th Siberian Russian Workshop and Tutorial on Electron Devices and Materials","volume":"93 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-08-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129409853","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Prediction of Averaged Refractive Index of Multicomponent Oxide Crystals by Chemical Formula 用化学式预测多组分氧化物晶体的平均折射率
2007 8th Siberian Russian Workshop and Tutorial on Electron Devices and Materials Pub Date : 2007-08-20 DOI: 10.1109/SIBEDM.2007.4292910
A. Korotkov, V. Atuchin
{"title":"Prediction of Averaged Refractive Index of Multicomponent Oxide Crystals by Chemical Formula","authors":"A. Korotkov, V. Atuchin","doi":"10.1109/SIBEDM.2007.4292910","DOIUrl":"https://doi.org/10.1109/SIBEDM.2007.4292910","url":null,"abstract":"A method is proposed for estimation of mean refractive index of complex oxide crystals on the basis of nominal chemical composition. Applicability of the method has been tested for a set of ~100 inorganic oxide crystals with averaged error as low as ~5%. The method allows the design of new oxide materials with adjusted refraction index in unknown chemical systems.","PeriodicalId":106151,"journal":{"name":"2007 8th Siberian Russian Workshop and Tutorial on Electron Devices and Materials","volume":"29 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-08-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128725199","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Avalanche Pulse Rate Instability in Silicon Diodes Used in Random Number Generators 用于随机数发生器的硅二极管雪崩脉冲速率的不稳定性
2007 8th Siberian Russian Workshop and Tutorial on Electron Devices and Materials Pub Date : 2007-08-20 DOI: 10.1109/SIBEDM.2007.4292932
Aleh K. Baranouski
{"title":"Avalanche Pulse Rate Instability in Silicon Diodes Used in Random Number Generators","authors":"Aleh K. Baranouski","doi":"10.1109/SIBEDM.2007.4292932","DOIUrl":"https://doi.org/10.1109/SIBEDM.2007.4292932","url":null,"abstract":"The avalanche pulse rate instability in silicon diodes is investigated to use these diodes in random number generators. It is experimentally proved that bilevel fluctuations of pulse rate may be described as discrete Markov process.","PeriodicalId":106151,"journal":{"name":"2007 8th Siberian Russian Workshop and Tutorial on Electron Devices and Materials","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-08-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129736531","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Sharing Hopping and Interleaving Processes in Channels, Described by Simplified Fritchman Model 用简化的Fritchman模型描述信道中的共享跳变和交错过程
2007 8th Siberian Russian Workshop and Tutorial on Electron Devices and Materials Pub Date : 2007-08-20 DOI: 10.1109/SIBEDM.2007.4292955
M.L. Karpylev, P. V. Krasheninnikov, A. Shapin
{"title":"Sharing Hopping and Interleaving Processes in Channels, Described by Simplified Fritchman Model","authors":"M.L. Karpylev, P. V. Krasheninnikov, A. Shapin","doi":"10.1109/SIBEDM.2007.4292955","DOIUrl":"https://doi.org/10.1109/SIBEDM.2007.4292955","url":null,"abstract":"Some wireless channels are well described by the Fritchman's model. In this paper we had investigated influence of shared hopping and interleaving processes on channel parameters described by above model. We have made simulation, which prove the theoretical results for new simplified Fritchman's model and further apply it to investigation of shared hopping and interleaving processes. As a result we have got maximal decorelation degree conditions.","PeriodicalId":106151,"journal":{"name":"2007 8th Siberian Russian Workshop and Tutorial on Electron Devices and Materials","volume":"21 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-08-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129989261","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
The Research of Ways of Increase of Sensitivity of Magnetotransistor by Numerical Methods 用数值方法提高磁敏晶体管灵敏度的方法研究
2007 8th Siberian Russian Workshop and Tutorial on Electron Devices and Materials Pub Date : 2007-08-20 DOI: 10.1109/SIBEDM.2007.4292921
A. V. Kozlov, Y. A. Parmenov
{"title":"The Research of Ways of Increase of Sensitivity of Magnetotransistor by Numerical Methods","authors":"A. V. Kozlov, Y. A. Parmenov","doi":"10.1109/SIBEDM.2007.4292921","DOIUrl":"https://doi.org/10.1109/SIBEDM.2007.4292921","url":null,"abstract":"By means of numerical modeling research of structure dual-collector bipolar magnetosensitivity n-p-n transistor in diffusion well of p-type with topology of elements: the emitter-base-collector was carried out. The analysis of proceeding currents through electrodes of the transistor has shown that relative magnetic sensitivity has a negative range. It is carried out research of influence of control voltage between electrodes of the transistor on change of a sign and size relative current sensitivity. The factors leading increase of magnetic sensitivity of transistors and change of a sign of a target signal by numerical calculations are established.","PeriodicalId":106151,"journal":{"name":"2007 8th Siberian Russian Workshop and Tutorial on Electron Devices and Materials","volume":"19 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-08-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130021807","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Electrical Characteristics of Polycrystalline 3C-SiC Thin Films 多晶3C-SiC薄膜的电学特性
2007 8th Siberian Russian Workshop and Tutorial on Electron Devices and Materials Pub Date : 2007-08-20 DOI: 10.1109/SIBEDM.2007.4292899
J. Ahn, G. Chung
{"title":"Electrical Characteristics of Polycrystalline 3C-SiC Thin Films","authors":"J. Ahn, G. Chung","doi":"10.1109/SIBEDM.2007.4292899","DOIUrl":"https://doi.org/10.1109/SIBEDM.2007.4292899","url":null,"abstract":"Since the properties of the polycrystalline 3C-SiC thin film heteroepitaxially grown on Si (n-type, p-type) or SiO2/Si is superior to any other that of single crystal SiC, it has attractive potentials for hash environments-, RF-, Bio-M/NEMS. Thus, we have investigated the electronic characteristics of the diodes having that a p-n junction diode was fabricated with 3C-SiC on p-type Si substrate, and Schottky diodes were fabricated with Au deposited on poly 3C-SiC/Si (n-type) and poly 3C-SiC/SiO2/Si respectively, for using extreme temperature surroundings M/NEMS with low leakage current. These diodes were annealed at 300, 400, and 500degC, and measured IV characteristics according to different annealing temperatures to investigate their electronic properties. SEM (scanning electron microscopy) and XKD (X-ray diffraction) have investigated the surface morphology of Au deposited on 3C-SiC thin films and the formed phases, respectively.","PeriodicalId":106151,"journal":{"name":"2007 8th Siberian Russian Workshop and Tutorial on Electron Devices and Materials","volume":"65 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-08-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123167530","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Calculation of Space Formations of Cation Polyhedra by Chemical Formula of Oxide 用氧化物化学式计算阳离子多面体的空间形成
2007 8th Siberian Russian Workshop and Tutorial on Electron Devices and Materials Pub Date : 2007-08-20 DOI: 10.1109/SIBEDM.2007.4292911
A. Korotkov, V. Atuchin
{"title":"Calculation of Space Formations of Cation Polyhedra by Chemical Formula of Oxide","authors":"A. Korotkov, V. Atuchin","doi":"10.1109/SIBEDM.2007.4292911","DOIUrl":"https://doi.org/10.1109/SIBEDM.2007.4292911","url":null,"abstract":"Universal method has been proposed for calculation of polyhedra space formation of each cation in the crystal lattice. Generation of simple, chain, layer and frame formations has been predicted and verified for non-centrosymmetric oxide crystals widely used in nonlinear optics.","PeriodicalId":106151,"journal":{"name":"2007 8th Siberian Russian Workshop and Tutorial on Electron Devices and Materials","volume":"47 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-08-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123640457","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
For a Question of Matching Between Electronic Generators and Ultrasonic Oscillatory Systems with Radiators, Work On Flexural Modes 针对电子发生器与带辐射体的超声振荡系统的匹配问题，研究了弯曲模态
2007 8th Siberian Russian Workshop and Tutorial on Electron Devices and Materials Pub Date : 2007-08-20 DOI: 10.1109/SIBEDM.2007.4292992
V. Khmelev, I. I. Savin, D. Abramenko
{"title":"For a Question of Matching Between Electronic Generators and Ultrasonic Oscillatory Systems with Radiators, Work On Flexural Modes","authors":"V. Khmelev, I. I. Savin, D. Abramenko","doi":"10.1109/SIBEDM.2007.4292992","DOIUrl":"https://doi.org/10.1109/SIBEDM.2007.4292992","url":null,"abstract":"The paper continues a series of works that aimed to achieves a maximal energy efficiency of ultrasonic action to different technological mediums by means of optimization of matching between electronic generators and ultrasonic oscillatory systems. In the present article has been described a calculation model, that defines dependence between technological mediums properties and full impedance of ultrasonic oscillatory systems.","PeriodicalId":106151,"journal":{"name":"2007 8th Siberian Russian Workshop and Tutorial on Electron Devices and Materials","volume":"167 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-08-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114382321","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
The Self-Action Agreement System of Electronic Generator with the Piezoelectric Oscillatory System 带有压电振荡系统的电子发电机自动协调系统
2007 8th Siberian Russian Workshop and Tutorial on Electron Devices and Materials Pub Date : 2007-08-20 DOI: 10.1109/SIBEDM.2007.4292983
V. Khmelev, R. Barsukov, D. V. Genne
{"title":"The Self-Action Agreement System of Electronic Generator with the Piezoelectric Oscillatory System","authors":"V. Khmelev, R. Barsukov, D. V. Genne","doi":"10.1109/SIBEDM.2007.4292983","DOIUrl":"https://doi.org/10.1109/SIBEDM.2007.4292983","url":null,"abstract":"In this article variants of agreement of piezoelectric oscillatory system with the electronic generator for self-action maintenance of optimum operating mode are considered. The special device is developed for its implementation.","PeriodicalId":106151,"journal":{"name":"2007 8th Siberian Russian Workshop and Tutorial on Electron Devices and Materials","volume":"303 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-08-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122320124","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
Influence of Quantum Computers on Classical Cryptography 量子计算机对经典密码学的影响
2007 8th Siberian Russian Workshop and Tutorial on Electron Devices and Materials Pub Date : 2007-08-20 DOI: 10.1109/SIBEDM.2007.4292963
V. Igumnov, Vadim N. Lis, Tomsk
{"title":"Influence of Quantum Computers on Classical Cryptography","authors":"V. Igumnov, Vadim N. Lis, Tomsk","doi":"10.1109/SIBEDM.2007.4292963","DOIUrl":"https://doi.org/10.1109/SIBEDM.2007.4292963","url":null,"abstract":"In this work influence of quantum computers on modern classical cryptography is considered. In the end of work it is made a conclusion: whether the quantum cryptography can replace classical cryptography.","PeriodicalId":106151,"journal":{"name":"2007 8th Siberian Russian Workshop and Tutorial on Electron Devices and Materials","volume":"40 11","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-08-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"120994039","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
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