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2007 8th Siberian Russian Workshop and Tutorial on Electron Devices and Materials最新文献

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Micro-plasma Protective Coatings 微等离子体防护涂层
2007 8th Siberian Russian Workshop and Tutorial on Electron Devices and Materials Pub Date : 2007-08-20 DOI: 10.1109/SIBEDM.2007.4292916
S. U. Bortsov, I. B. Kirienko, V. Kirillov, V. A. Nadolinnyj
{"title":"Micro-plasma Protective Coatings","authors":"S. U. Bortsov, I. B. Kirienko, V. Kirillov, V. A. Nadolinnyj","doi":"10.1109/SIBEDM.2007.4292916","DOIUrl":"https://doi.org/10.1109/SIBEDM.2007.4292916","url":null,"abstract":"Technology of formation of multipurpose coatings by a method of microplasma oxidation is developed. Advantages compared to other methods of a coating deposition are shown. Advantages and capabilities of microplasma oxidation are given. Basic characteristics of coatings on aluminum alloys are: adhesion (ges 3500 kg / sm2), microhardness (ges 2500 kg / mm2), a breakdown voltage (les 2000 V). This technology is applicable in the following areas: mechanical engineering, plane-and ship- building, fuel and power generation industry, chemical and food industries, and medical equipment.","PeriodicalId":106151,"journal":{"name":"2007 8th Siberian Russian Workshop and Tutorial on Electron Devices and Materials","volume":"29 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-08-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127524381","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
The Research of Ways of Increase of Sensitivity of Magnetotransistor by Numerical Methods 用数值方法提高磁敏晶体管灵敏度的方法研究
2007 8th Siberian Russian Workshop and Tutorial on Electron Devices and Materials Pub Date : 2007-08-20 DOI: 10.1109/SIBEDM.2007.4292921
A. V. Kozlov, Y. A. Parmenov
{"title":"The Research of Ways of Increase of Sensitivity of Magnetotransistor by Numerical Methods","authors":"A. V. Kozlov, Y. A. Parmenov","doi":"10.1109/SIBEDM.2007.4292921","DOIUrl":"https://doi.org/10.1109/SIBEDM.2007.4292921","url":null,"abstract":"By means of numerical modeling research of structure dual-collector bipolar magnetosensitivity n-p-n transistor in diffusion well of p-type with topology of elements: the emitter-base-collector was carried out. The analysis of proceeding currents through electrodes of the transistor has shown that relative magnetic sensitivity has a negative range. It is carried out research of influence of control voltage between electrodes of the transistor on change of a sign and size relative current sensitivity. The factors leading increase of magnetic sensitivity of transistors and change of a sign of a target signal by numerical calculations are established.","PeriodicalId":106151,"journal":{"name":"2007 8th Siberian Russian Workshop and Tutorial on Electron Devices and Materials","volume":"19 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-08-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130021807","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Femtosecond Pulse Focusing by Means of Diffractive Elements on Tapered Surface 锥形表面衍射元件的飞秒脉冲聚焦
2007 8th Siberian Russian Workshop and Tutorial on Electron Devices and Materials Pub Date : 2007-08-20 DOI: 10.1109/SIBEDM.2007.4292951
D.O. Golodnikov, I. Minin, O. Minin
{"title":"Femtosecond Pulse Focusing by Means of Diffractive Elements on Tapered Surface","authors":"D.O. Golodnikov, I. Minin, O. Minin","doi":"10.1109/SIBEDM.2007.4292951","DOIUrl":"https://doi.org/10.1109/SIBEDM.2007.4292951","url":null,"abstract":"A diffractive elements (DOE) on the tapered surface, providing minimum time delay between wave and pulse fronts are described. Equations for calculating value of focal depth expansion and working band of DOE on the tapered surface with different phase quantification level and number of Fresnel sub zones are also described.","PeriodicalId":106151,"journal":{"name":"2007 8th Siberian Russian Workshop and Tutorial on Electron Devices and Materials","volume":"93 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-08-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129409853","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Avalanche Pulse Rate Instability in Silicon Diodes Used in Random Number Generators 用于随机数发生器的硅二极管雪崩脉冲速率的不稳定性
2007 8th Siberian Russian Workshop and Tutorial on Electron Devices and Materials Pub Date : 2007-08-20 DOI: 10.1109/SIBEDM.2007.4292932
Aleh K. Baranouski
{"title":"Avalanche Pulse Rate Instability in Silicon Diodes Used in Random Number Generators","authors":"Aleh K. Baranouski","doi":"10.1109/SIBEDM.2007.4292932","DOIUrl":"https://doi.org/10.1109/SIBEDM.2007.4292932","url":null,"abstract":"The avalanche pulse rate instability in silicon diodes is investigated to use these diodes in random number generators. It is experimentally proved that bilevel fluctuations of pulse rate may be described as discrete Markov process.","PeriodicalId":106151,"journal":{"name":"2007 8th Siberian Russian Workshop and Tutorial on Electron Devices and Materials","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-08-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129736531","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Sharing Hopping and Interleaving Processes in Channels, Described by Simplified Fritchman Model 用简化的Fritchman模型描述信道中的共享跳变和交错过程
2007 8th Siberian Russian Workshop and Tutorial on Electron Devices and Materials Pub Date : 2007-08-20 DOI: 10.1109/SIBEDM.2007.4292955
M.L. Karpylev, P. V. Krasheninnikov, A. Shapin
{"title":"Sharing Hopping and Interleaving Processes in Channels, Described by Simplified Fritchman Model","authors":"M.L. Karpylev, P. V. Krasheninnikov, A. Shapin","doi":"10.1109/SIBEDM.2007.4292955","DOIUrl":"https://doi.org/10.1109/SIBEDM.2007.4292955","url":null,"abstract":"Some wireless channels are well described by the Fritchman's model. In this paper we had investigated influence of shared hopping and interleaving processes on channel parameters described by above model. We have made simulation, which prove the theoretical results for new simplified Fritchman's model and further apply it to investigation of shared hopping and interleaving processes. As a result we have got maximal decorelation degree conditions.","PeriodicalId":106151,"journal":{"name":"2007 8th Siberian Russian Workshop and Tutorial on Electron Devices and Materials","volume":"21 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-08-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129989261","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Prediction of Averaged Refractive Index of Multicomponent Oxide Crystals by Chemical Formula 用化学式预测多组分氧化物晶体的平均折射率
2007 8th Siberian Russian Workshop and Tutorial on Electron Devices and Materials Pub Date : 2007-08-20 DOI: 10.1109/SIBEDM.2007.4292910
A. Korotkov, V. Atuchin
{"title":"Prediction of Averaged Refractive Index of Multicomponent Oxide Crystals by Chemical Formula","authors":"A. Korotkov, V. Atuchin","doi":"10.1109/SIBEDM.2007.4292910","DOIUrl":"https://doi.org/10.1109/SIBEDM.2007.4292910","url":null,"abstract":"A method is proposed for estimation of mean refractive index of complex oxide crystals on the basis of nominal chemical composition. Applicability of the method has been tested for a set of ~100 inorganic oxide crystals with averaged error as low as ~5%. The method allows the design of new oxide materials with adjusted refraction index in unknown chemical systems.","PeriodicalId":106151,"journal":{"name":"2007 8th Siberian Russian Workshop and Tutorial on Electron Devices and Materials","volume":"29 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-08-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128725199","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Estimation of CCD Cells of Non-uniform Sensitivity Influence on Coordinates Gauge Accuracy of the Ignition Center 非均匀灵敏度CCD单元对点火中心坐标测量精度影响的估计
2007 8th Siberian Russian Workshop and Tutorial on Electron Devices and Materials Pub Date : 2007-08-20 DOI: 10.1109/SIBEDM.2007.4293003
M.O. Kulev, S. Terentyev, A. Pavlov, E. V. Sypin, G. Leonov
{"title":"Estimation of CCD Cells of Non-uniform Sensitivity Influence on Coordinates Gauge Accuracy of the Ignition Center","authors":"M.O. Kulev, S. Terentyev, A. Pavlov, E. V. Sypin, G. Leonov","doi":"10.1109/SIBEDM.2007.4293003","DOIUrl":"https://doi.org/10.1109/SIBEDM.2007.4293003","url":null,"abstract":"In article the influence of non-uniform sensitivity of cells CCD on accuracy of the gauge of coordinates of the center of ignition is considered and the way of correction thereof is offered to an error.","PeriodicalId":106151,"journal":{"name":"2007 8th Siberian Russian Workshop and Tutorial on Electron Devices and Materials","volume":"27 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-08-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115135533","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Automated Synthesis of Broadband Matching and Matching-Correcting Networks 宽带匹配与匹配校正网络的自动合成
2007 8th Siberian Russian Workshop and Tutorial on Electron Devices and Materials Pub Date : 2007-08-20 DOI: 10.1109/SIBEDM.2007.4292952
A. S. Volokhin, G. N. Deviatkov
{"title":"Automated Synthesis of Broadband Matching and Matching-Correcting Networks","authors":"A. S. Volokhin, G. N. Deviatkov","doi":"10.1109/SIBEDM.2007.4292952","DOIUrl":"https://doi.org/10.1109/SIBEDM.2007.4292952","url":null,"abstract":"In this paper a method for automatic broadband matching and matching-correcting networks synthesis is described; the method allows to design matching networks in a lumped and distributed elemental bases and matching-correcting networks in a lumped elemental basis with losses; on the base of the method a computer program was created; in the end of the paper tests of the program were listed.","PeriodicalId":106151,"journal":{"name":"2007 8th Siberian Russian Workshop and Tutorial on Electron Devices and Materials","volume":"68 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-08-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114143147","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
For a Question of Matching Between Electronic Generators and Ultrasonic Oscillatory Systems with Radiators, Work On Flexural Modes 针对电子发生器与带辐射体的超声振荡系统的匹配问题，研究了弯曲模态
2007 8th Siberian Russian Workshop and Tutorial on Electron Devices and Materials Pub Date : 2007-08-20 DOI: 10.1109/SIBEDM.2007.4292992
V. Khmelev, I. I. Savin, D. Abramenko
{"title":"For a Question of Matching Between Electronic Generators and Ultrasonic Oscillatory Systems with Radiators, Work On Flexural Modes","authors":"V. Khmelev, I. I. Savin, D. Abramenko","doi":"10.1109/SIBEDM.2007.4292992","DOIUrl":"https://doi.org/10.1109/SIBEDM.2007.4292992","url":null,"abstract":"The paper continues a series of works that aimed to achieves a maximal energy efficiency of ultrasonic action to different technological mediums by means of optimization of matching between electronic generators and ultrasonic oscillatory systems. In the present article has been described a calculation model, that defines dependence between technological mediums properties and full impedance of ultrasonic oscillatory systems.","PeriodicalId":106151,"journal":{"name":"2007 8th Siberian Russian Workshop and Tutorial on Electron Devices and Materials","volume":"167 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-08-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114382321","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Modelling of the Impulse Generator for a Gas-discharge Photo of Biologically Active Points 生物活性点气体放电照片脉冲发生器的建模
2007 8th Siberian Russian Workshop and Tutorial on Electron Devices and Materials Pub Date : 2007-08-20 DOI: 10.1109/SIBEDM.2007.4292942
A. V. Mokrousov
{"title":"Modelling of the Impulse Generator for a Gas-discharge Photo of Biologically Active Points","authors":"A. V. Mokrousov","doi":"10.1109/SIBEDM.2007.4292942","DOIUrl":"https://doi.org/10.1109/SIBEDM.2007.4292942","url":null,"abstract":"Modelling of the impulse generator intended for a gas-discharge photo of biologically active points on program Micro-Cap 7.0 is realized. The choice of electronic components is proved. Graphs of an output signal, which show that system device requirements are executed, are presented. Oscillogram of an output voltage of the laboratory model of the device well agreed with modeling results. Safety of use of the given device in the medical diagnostic purposes is confirmed.","PeriodicalId":106151,"journal":{"name":"2007 8th Siberian Russian Workshop and Tutorial on Electron Devices and Materials","volume":"59 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-08-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114912400","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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