{"title":"用于随机数发生器的硅二极管雪崩脉冲速率的不稳定性","authors":"Aleh K. Baranouski","doi":"10.1109/SIBEDM.2007.4292932","DOIUrl":null,"url":null,"abstract":"The avalanche pulse rate instability in silicon diodes is investigated to use these diodes in random number generators. It is experimentally proved that bilevel fluctuations of pulse rate may be described as discrete Markov process.","PeriodicalId":106151,"journal":{"name":"2007 8th Siberian Russian Workshop and Tutorial on Electron Devices and Materials","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2007-08-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Avalanche Pulse Rate Instability in Silicon Diodes Used in Random Number Generators\",\"authors\":\"Aleh K. Baranouski\",\"doi\":\"10.1109/SIBEDM.2007.4292932\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The avalanche pulse rate instability in silicon diodes is investigated to use these diodes in random number generators. It is experimentally proved that bilevel fluctuations of pulse rate may be described as discrete Markov process.\",\"PeriodicalId\":106151,\"journal\":{\"name\":\"2007 8th Siberian Russian Workshop and Tutorial on Electron Devices and Materials\",\"volume\":\"1 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2007-08-20\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2007 8th Siberian Russian Workshop and Tutorial on Electron Devices and Materials\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/SIBEDM.2007.4292932\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2007 8th Siberian Russian Workshop and Tutorial on Electron Devices and Materials","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SIBEDM.2007.4292932","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Avalanche Pulse Rate Instability in Silicon Diodes Used in Random Number Generators
The avalanche pulse rate instability in silicon diodes is investigated to use these diodes in random number generators. It is experimentally proved that bilevel fluctuations of pulse rate may be described as discrete Markov process.