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Environmental, health and safety issues associated with the manufacture and use of II–VI photovoltaic devices 与制造和使用II-VI类光伏装置有关的环境、健康和安全问题
Solar Cells Pub Date : 1991-05-01 DOI: 10.1016/0379-6787(91)90041-M
P.D. Moskowitz, V.M. Fthenakis
{"title":"Environmental, health and safety issues associated with the manufacture and use of II–VI photovoltaic devices","authors":"P.D. Moskowitz,&nbsp;V.M. Fthenakis","doi":"10.1016/0379-6787(91)90041-M","DOIUrl":"10.1016/0379-6787(91)90041-M","url":null,"abstract":"<div><p>Federal and state agencies have classified cadmium and selenium compounds as hazardous. Consequently, facilities using these materials are subject to various regulations and guidelines developed by these agencies. The intent of these guidelines is to protect worker and public health from accidental and routine chemical exposures. In this context, the agencies provide specific limits on public and occupational exposures, and generalized guidance on methods or approaches for attaining such limits. This paper gives background information on the toxicology and pharmacology of cadmium and selenium compounds, and reviews several newly proposed or adopted Federal and state regulations which can affect photovoltaic manufacturing facility operations using these and other similar chemicals.</p></div>","PeriodicalId":101172,"journal":{"name":"Solar Cells","volume":"30 1","pages":"Pages 89-99"},"PeriodicalIF":0.0,"publicationDate":"1991-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1016/0379-6787(91)90041-M","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"84434502","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 26
Thin films of II–VI compounds and alloys II-VI类化合物和合金薄膜
Solar Cells Pub Date : 1991-05-01 DOI: 10.1016/0379-6787(91)90044-P
T.L. Chu, S.S. Chu, C. Ferekides, J. Britt, C.Q. Wu, G. Chen, N. Schultz
{"title":"Thin films of II–VI compounds and alloys","authors":"T.L. Chu,&nbsp;S.S. Chu,&nbsp;C. Ferekides,&nbsp;J. Britt,&nbsp;C.Q. Wu,&nbsp;G. Chen,&nbsp;N. Schultz","doi":"10.1016/0379-6787(91)90044-P","DOIUrl":"10.1016/0379-6787(91)90044-P","url":null,"abstract":"<div><p>II–VI semiconductors and their alloys are promising thin film photovoltaic materials. Polycrystalline films of cadmium telluride (CdTe), zinc telluride (ZnTe), cadmium zinc telluride (<span><math><mtext>Cd</mtext><msub><mi></mi><mn>x</mn></msub><mtext>Zn</mtext><msub><mi></mi><mn>1−x</mn></msub><mtext>Te</mtext></math></span>), and mercury zinc telluride (<span><math><mtext>Hg</mtext><msub><mi></mi><mn>x</mn></msub><mtext>Zn</mtext><msub><mi></mi><mn>1−x</mn></msub><mtext>Te</mtext></math></span>) were deposited onto glass and transparent-conducting-semiconductor (TCS) coated glass substrates by metal-organic chemical vapor deposition. Emphasis was directed to the doping of CdTe films, ohmic contacts to p-CdTe, and thin film CdTe homojunctions. CdTe films may be doped intrinsically or extrinsically; gallium and arsenic were used as the extrinsic n and p dopant respectively. p<sup>+</sup>-ZnTe films deposited <em>in situ</em> were used as an ohmic contact to p-CdTe films. Thin film CdTe homojunctions were prepared by the successive <em>in situ</em> deposition of n-CdTe, p-CdTe, and p<sup>+</sup>-ZnTe films on SnO<sub>2</sub>-coated glass substrates, and their properties were investigated. The properties of <span><math><mtext>Cd</mtext><msub><mi></mi><mn>x</mn></msub><mtext>Zn</mtext><msub><mi></mi><mn>1−x</mn></msub><mtext>Te</mtext></math></span> and <span><math><mtext>Hg</mtext><msub><mi></mi><mn>x</mn></msub><mtext>Zn</mtext><msub><mi></mi><mn>1−x</mn></msub><mtext>Te</mtext></math></span> films with band gap energy in the range 1.65–1.75 eV deposited onto glass and TCS-coated glass substrates were studied.</p></div>","PeriodicalId":101172,"journal":{"name":"Solar Cells","volume":"30 1","pages":"Pages 123-130"},"PeriodicalIF":0.0,"publicationDate":"1991-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1016/0379-6787(91)90044-P","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"73976133","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 16
Materials aspects of multijunction solar cells 多结太阳能电池的材料方面
Solar Cells Pub Date : 1991-05-01 DOI: 10.1016/0379-6787(91)90063-U
S.A. Hussien, P. Colter, A. Dip, J.R. Gong, M.U. Erdogan, S.M. Bedair
{"title":"Materials aspects of multijunction solar cells","authors":"S.A. Hussien,&nbsp;P. Colter,&nbsp;A. Dip,&nbsp;J.R. Gong,&nbsp;M.U. Erdogan,&nbsp;S.M. Bedair","doi":"10.1016/0379-6787(91)90063-U","DOIUrl":"10.1016/0379-6787(91)90063-U","url":null,"abstract":"<div><p>Atomic layer epitaxy (ALE) was used to grow several components of the cascade solar cell structure in the AlGaAs/GaAs system. An ALE reactor was constructed for multiwafer growth with a growth rate of 0.6 μm h<sup>−1</sup>. Device quality GaAs and <span><math><mtext>As</mtext><msub><mi></mi><mn>x</mn></msub><mtext>Ga</mtext><msub><mi></mi><mn>1−x</mn></msub><mtext>As</mtext></math></span> films were grown with p-type background carbon doping in the ranges 10<sup>15</sup>–10<sup>19</sup> cm<sup>−3</sup> and 10<sup>16</sup>–10<sup>20</sup> cm<sup>−3</sup> respectively. N-type films were achieved by SiH<sub>4</sub> doping, producing carrier concentrations in the range 10<sup>16</sup>–10<sup>18</sup> cm<sup>−3</sup>. In addition, the potential applications of the ALE technique in the photovoltaic field are discussed.</p></div>","PeriodicalId":101172,"journal":{"name":"Solar Cells","volume":"30 1","pages":"Pages 305-311"},"PeriodicalIF":0.0,"publicationDate":"1991-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1016/0379-6787(91)90063-U","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"72900496","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
Tandem gallium solar cell voltage-matched circuit performance projections 串联镓太阳能电池电压匹配电路性能预测
Solar Cells Pub Date : 1991-05-01 DOI: 10.1016/0379-6787(91)90068-Z
L.M. Fraas, J.E. Avery, P.E. Gruenbaum, R.J. Ballantyne, E. Malocsay
{"title":"Tandem gallium solar cell voltage-matched circuit performance projections","authors":"L.M. Fraas,&nbsp;J.E. Avery,&nbsp;P.E. Gruenbaum,&nbsp;R.J. Ballantyne,&nbsp;E. Malocsay","doi":"10.1016/0379-6787(91)90068-Z","DOIUrl":"10.1016/0379-6787(91)90068-Z","url":null,"abstract":"<div><p>Using tandem cell test units with GaAs and GaSb concentrator cells, we have achieved a NASA verified conversion efficiency of 30.8% for space applications. Here, we describe tandem gallium cell assemblies and flex circuit tape interconnect concepts for use in practical power generating concentrator panels. The forward and reverse characteristics of tandem cell voltage-matched circuits are described. It is noted that the GaSb IR cell doubles as a bypass diode, providing shading protection for the GaAs cell.</p></div>","PeriodicalId":101172,"journal":{"name":"Solar Cells","volume":"30 1","pages":"Pages 355-361"},"PeriodicalIF":0.0,"publicationDate":"1991-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1016/0379-6787(91)90068-Z","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"89910879","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 6
Chairman's comments 主席的讲话
Solar Cells Pub Date : 1991-05-01 DOI: 10.1016/0379-6787(91)90030-S
JohnP. Benner
{"title":"Chairman's comments","authors":"JohnP. Benner","doi":"10.1016/0379-6787(91)90030-S","DOIUrl":"10.1016/0379-6787(91)90030-S","url":null,"abstract":"","PeriodicalId":101172,"journal":{"name":"Solar Cells","volume":"30 1","pages":"Page IFC"},"PeriodicalIF":0.0,"publicationDate":"1991-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1016/0379-6787(91)90030-S","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"87861149","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Practical guidelines for grid metallization in photovoltaic solar cell research 光伏太阳能电池研究中网格金属化的实用指南
Solar Cells Pub Date : 1991-05-01 DOI: 10.1016/0379-6787(91)90078-4
T.A. Gessert, X. Li, T.J. Coutts
{"title":"Practical guidelines for grid metallization in photovoltaic solar cell research","authors":"T.A. Gessert,&nbsp;X. Li,&nbsp;T.J. Coutts","doi":"10.1016/0379-6787(91)90078-4","DOIUrl":"10.1016/0379-6787(91)90078-4","url":null,"abstract":"<div><p>During the research stage, many photovoltaic solar cells suffer substantial power loss due to the use of non-optimum top contact grids. The very nature of solar cell research implies that many cell parameters will be in a continual state of change and thus the grid will seldom be truly optimized. However, several things can be done to ensure that a solar cell grid will perform well even if the parameters vary. In this paper, critical parameters for solar cell grid modeling and design are identified and discussed. Particular attention is paid to the manner in which process aspects affect these parameters and the subsequent power loss of the grid. Finally, practical guidelines are presented, the use of which can minimize the effect of process variation.</p></div>","PeriodicalId":101172,"journal":{"name":"Solar Cells","volume":"30 1","pages":"Pages 459-472"},"PeriodicalIF":0.0,"publicationDate":"1991-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1016/0379-6787(91)90078-4","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"84993725","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 9
Advances in the development of an AlGaAs/GaAs cascade solar cell using a patterned germanium tunnel interconnect 采用图案锗隧道互连的AlGaAs/GaAs级联太阳能电池的研究进展
Solar Cells Pub Date : 1991-05-01 DOI: 10.1016/0379-6787(91)90067-Y
R. Venkatasubramanian, M.L. Timmons, T.S. Colpitts, J.S. Hills
{"title":"Advances in the development of an AlGaAs/GaAs cascade solar cell using a patterned germanium tunnel interconnect","authors":"R. Venkatasubramanian,&nbsp;M.L. Timmons,&nbsp;T.S. Colpitts,&nbsp;J.S. Hills","doi":"10.1016/0379-6787(91)90067-Y","DOIUrl":"10.1016/0379-6787(91)90067-Y","url":null,"abstract":"<div><p>In this paper, we discuss various aspects of the development of an inverted-grown AlGaAs/GaAs cascade solar cell incorporating a patterned germanium tunnel junction. Topics include the development of the Al<sub>0.37</sub>Ga<sub>0.63</sub>As top cell, the growth of the GaAs bottom cell over the patterned germanium tunnel junction, and a technique for selective removal of thin AlGaAs/GaAs heterostructures after lattice-matched growth of germanium substrates. The problems to be overcome for the achievement of around 30% efficiencies in the AlGaAs/GaAs cascade cell under concentrator applications are also discussed.</p></div>","PeriodicalId":101172,"journal":{"name":"Solar Cells","volume":"30 1","pages":"Pages 345-354"},"PeriodicalIF":0.0,"publicationDate":"1991-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1016/0379-6787(91)90067-Y","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"80318465","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
Subject index of volume 30 第30卷主题索引
Solar Cells Pub Date : 1991-05-01 DOI: 10.1016/0379-6787(91)90090-C
{"title":"Subject index of volume 30","authors":"","doi":"10.1016/0379-6787(91)90090-C","DOIUrl":"https://doi.org/10.1016/0379-6787(91)90090-C","url":null,"abstract":"","PeriodicalId":101172,"journal":{"name":"Solar Cells","volume":"30 1","pages":"Pages 575-580"},"PeriodicalIF":0.0,"publicationDate":"1991-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1016/0379-6787(91)90090-C","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"137344394","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
The formation of CuInSe2 thin films by rapid thermal processing 快速热加工制备CuInSe2薄膜
Solar Cells Pub Date : 1991-05-01 DOI: 10.1016/0379-6787(91)90039-R
G.D. Mooney , A.M. Hermann, J.R. Tuttle, D.S. Albin, R. Noufi
{"title":"The formation of CuInSe2 thin films by rapid thermal processing","authors":"G.D. Mooney ,&nbsp;A.M. Hermann,&nbsp;J.R. Tuttle,&nbsp;D.S. Albin,&nbsp;R. Noufi","doi":"10.1016/0379-6787(91)90039-R","DOIUrl":"10.1016/0379-6787(91)90039-R","url":null,"abstract":"<div><p>Formation of polycrystalline thin film CuInSe<sub>2</sub> was achieved by the rapid thermal processing of vacuum-deposited copper, indium, and selenium. Films were fabricated and characterized in three composition regions: copper-poor (approximately 20 at.% Cu). stoichiometric (25 at.% Cu) and copper-rich (approximately 28 at.% Cu). Characterization results including X-ray diffraction analysis, electron probe for microanalysis, scanning electron microscopy, and optical reflection and transmission measurements are presented. The results show that nearly single-phase material has been formed from co-deposited precursors with a post-deposition annealing time of less than 2 min. The films have smooth morphologies amenable for photovoltaic device fabrication, optical absorption coefficients in the high 10<sup>4</sup> cm<sup>−1</sup> range, and an optical band gap of 1.0 eV.</p></div>","PeriodicalId":101172,"journal":{"name":"Solar Cells","volume":"30 1","pages":"Pages 69-77"},"PeriodicalIF":0.0,"publicationDate":"1991-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1016/0379-6787(91)90039-R","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"80594447","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 10
CuInSe2 photovoltaic modules CuInSe2光伏组件
Solar Cells Pub Date : 1991-05-01 DOI: 10.1016/0379-6787(91)90045-Q
K.W. Mitchell, W. Chesarek, D.R. Willett, C. Eberspacher, J.H. Ermer, R.R. Gay
{"title":"CuInSe2 photovoltaic modules","authors":"K.W. Mitchell,&nbsp;W. Chesarek,&nbsp;D.R. Willett,&nbsp;C. Eberspacher,&nbsp;J.H. Ermer,&nbsp;R.R. Gay","doi":"10.1016/0379-6787(91)90045-Q","DOIUrl":"10.1016/0379-6787(91)90045-Q","url":null,"abstract":"<div><p>This paper reviews the status of CuInSe<sub>2</sub> (CIS) module development. The potential of CIS for high power, thin film photovoltaic modules is demonstrated by the achievement of 14.1% active area cell efficiencies and unlaminated module power outputs of 10.5 W (11.2% aperture efficiency) on 940 cm<sup>2</sup> modules and 37.8 W (9.7% aperture efficiency) on 3900 m<sup>2</sup> modules. The definition of 0.4 m<sup>2</sup> CIS module pilot production is progressing.</p></div>","PeriodicalId":101172,"journal":{"name":"Solar Cells","volume":"30 1","pages":"Pages 131-136"},"PeriodicalIF":0.0,"publicationDate":"1991-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1016/0379-6787(91)90045-Q","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"89113042","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 14
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