Solar Cells最新文献_第8页

What can we learn from the saturation of light-induced defects in amorphous hydrogenated silicon? 我们可以从非晶氢化硅的光致缺陷饱和中学到什么?

Solar Cells Pub Date : 1991-05-01 Epub Date: 2003-03-05 DOI: 10.1016/0379-6787(91)90050-Y

M. Isomura, X. Xu, S. Wagner

{"title":"What can we learn from the saturation of light-induced defects in amorphous hydrogenated silicon?","authors":"M. Isomura, X. Xu, S. Wagner","doi":"10.1016/0379-6787(91)90050-Y","DOIUrl":"10.1016/0379-6787(91)90050-Y","url":null,"abstract":"<div>At a sufficiently high photon flux the density of light-induced defects in amorphous hydrogenated silicon (a-Si:H) can be made to saturate within a few hours. The saturated defect density <math><mtext>N</mtext><msub><mi></mi><mn><mtext>sat</mtext></mn></msub></math> is independent of light intensity, of temperature and of further illumination over a wide range of conditions. Therefore, <math><mtext>N</mtext><msub><mi></mi><mn><mtext>sat</mtext></mn></msub></math> can serve as a robust criterion for the rapid evaluation of the stability of a-Si:H. In this paper we show that <math><mtext>N</mtext><msub><mi></mi><mn><mtext>sat</mtext></mn></msub></math> is correlated with the rate of defect buildup during light-soaking, so that the entire defect history and the useful life of a particular sample may be inferred from <math><mtext>N</mtext><msub><mi></mi><mn><mtext>sat</mtext></mn></msub></math>. So far, we have measured values of <math><mtext>N</mtext><msub><mi></mi><mn><mtext>sat</mtext></mn></msub></math> between 4 × 1016 and 2 × 1017 cm−3 in electronic-grade a-Si:H. <math><mtext>N</mtext><msub><mi></mi><mn><mtext>sat</mtext></mn></msub></math>, and thus the rate of defect buildup, rises with the value of the band gap and with the hydrogen content; it drops with increasing deposition temperature. <math><mtext>N</mtext><msub><mi></mi><mn><mtext>sat</mtext></mn></msub></math> is not correlated with either the initial defect density or the Urbach energy. We demonstrate an application of the correlation between the saturated defect density and the optical gap to predict the long-term performance of solar cells.</div>","PeriodicalId":101172,"journal":{"name":"Solar Cells","volume":"30 1","pages":"Pages 177-191"},"PeriodicalIF":0.0,"publicationDate":"1991-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1016/0379-6787(91)90050-Y","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"72774499","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 15

Tandem gallium solar cell voltage-matched circuit performance projections 串联镓太阳能电池电压匹配电路性能预测

Solar Cells Pub Date : 1991-05-01 Epub Date: 2003-03-05 DOI: 10.1016/0379-6787(91)90068-Z

L.M. Fraas, J.E. Avery, P.E. Gruenbaum, R.J. Ballantyne, E. Malocsay

引用次数: 6

Materials aspects of multijunction solar cells 多结太阳能电池的材料方面

Solar Cells Pub Date : 1991-05-01 Epub Date: 2003-03-05 DOI: 10.1016/0379-6787(91)90063-U

S.A. Hussien, P. Colter, A. Dip, J.R. Gong, M.U. Erdogan, S.M. Bedair

引用次数: 4

Practical guidelines for grid metallization in photovoltaic solar cell research 光伏太阳能电池研究中网格金属化的实用指南

Solar Cells Pub Date : 1991-05-01 Epub Date: 2003-03-05 DOI: 10.1016/0379-6787(91)90078-4

T.A. Gessert, X. Li, T.J. Coutts

引用次数: 9

Chairman's comments 主席的讲话

Solar Cells Pub Date : 1991-05-01 Epub Date: 2003-03-05 DOI: 10.1016/0379-6787(91)90030-S

JohnP. Benner

引用次数: 0

Advances in the development of an AlGaAs/GaAs cascade solar cell using a patterned germanium tunnel interconnect 采用图案锗隧道互连的AlGaAs/GaAs级联太阳能电池的研究进展

Solar Cells Pub Date : 1991-05-01 Epub Date: 2003-03-05 DOI: 10.1016/0379-6787(91)90067-Y

R. Venkatasubramanian, M.L. Timmons, T.S. Colpitts, J.S. Hills

引用次数: 4

Thin films of II–VI compounds and alloys II-VI类化合物和合金薄膜

Solar Cells Pub Date : 1991-05-01 Epub Date: 2003-03-05 DOI: 10.1016/0379-6787(91)90044-P

T.L. Chu, S.S. Chu, C. Ferekides, J. Britt, C.Q. Wu, G. Chen, N. Schultz

{"title":"Thin films of II–VI compounds and alloys","authors":"T.L. Chu, S.S. Chu, C. Ferekides, J. Britt, C.Q. Wu, G. Chen, N. Schultz","doi":"10.1016/0379-6787(91)90044-P","DOIUrl":"10.1016/0379-6787(91)90044-P","url":null,"abstract":"<div>II–VI semiconductors and their alloys are promising thin film photovoltaic materials. Polycrystalline films of cadmium telluride (CdTe), zinc telluride (ZnTe), cadmium zinc telluride (<math><mtext>Cd</mtext><msub><mi></mi><mn>x</mn></msub><mtext>Zn</mtext><msub><mi></mi><mn>1−x</mn></msub><mtext>Te</mtext></math>), and mercury zinc telluride (<math><mtext>Hg</mtext><msub><mi></mi><mn>x</mn></msub><mtext>Zn</mtext><msub><mi></mi><mn>1−x</mn></msub><mtext>Te</mtext></math>) were deposited onto glass and transparent-conducting-semiconductor (TCS) coated glass substrates by metal-organic chemical vapor deposition. Emphasis was directed to the doping of CdTe films, ohmic contacts to p-CdTe, and thin film CdTe homojunctions. CdTe films may be doped intrinsically or extrinsically; gallium and arsenic were used as the extrinsic n and p dopant respectively. p+-ZnTe films deposited in situ were used as an ohmic contact to p-CdTe films. Thin film CdTe homojunctions were prepared by the successive in situ deposition of n-CdTe, p-CdTe, and p+-ZnTe films on SnO2-coated glass substrates, and their properties were investigated. The properties of <math><mtext>Cd</mtext><msub><mi></mi><mn>x</mn></msub><mtext>Zn</mtext><msub><mi></mi><mn>1−x</mn></msub><mtext>Te</mtext></math> and <math><mtext>Hg</mtext><msub><mi></mi><mn>x</mn></msub><mtext>Zn</mtext><msub><mi></mi><mn>1−x</mn></msub><mtext>Te</mtext></math> films with band gap energy in the range 1.65–1.75 eV deposited onto glass and TCS-coated glass substrates were studied.</div>","PeriodicalId":101172,"journal":{"name":"Solar Cells","volume":"30 1","pages":"Pages 123-130"},"PeriodicalIF":0.0,"publicationDate":"1991-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1016/0379-6787(91)90044-P","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"73976133","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 16

Subject index of volume 30 第30卷主题索引

Solar Cells Pub Date : 1991-05-01 Epub Date: 2003-03-05 DOI: 10.1016/0379-6787(91)90090-C

引用次数: 0

Broad band spectroscopic ellipsometry for the characterization of photovoltaic materials 用于光伏材料表征的宽带椭圆偏振光谱

Solar Cells Pub Date : 1991-05-01 Epub Date: 2003-03-05 DOI: 10.1016/0379-6787(91)90079-5

F.A. Abou-Elfotouh, G.S. Horner, T.J. Coutts, M.W. Wanlass

{"title":"Broad band spectroscopic ellipsometry for the characterization of photovoltaic materials","authors":"F.A. Abou-Elfotouh, G.S. Horner, T.J. Coutts, M.W. Wanlass","doi":"10.1016/0379-6787(91)90079-5","DOIUrl":"10.1016/0379-6787(91)90079-5","url":null,"abstract":"<div>The availability of commercial spectroscopic ellipsometers (SE) has been restricted to the UV-visible range from 250–900 nm. Although this is useful for many applications, it must be extended to the near IR region (up to 1700 nm) for the study of the optical behavior of most photovoltaic materials. This paper discusses the development of a broad band (300–1700 nm) SE which has been used to measure the optical characteristics of various materials. Among these are the polycrystalline thin film materials, CuInSe2 and CdTe (for which single crystal samples have also been investigated), and materials for high efficiency cascade solar cells including InP, InGaAs and InGaAsP. Most of these data are not presently available over such a wide spectral range.Experimentally, a rotating polarizer-fixed analyzer ellipsometer with an a.c. detection system has been developed for accurate measurement of ψ and Δ, the relevant ellipsometric parameters, in the near IR. This approach has certain advantages over the rotating analyzer-fixed polarizer systems including reduced sensitivity to room light. The analytical methods include the use of a specially developed computer modeling program which gives ψ and Δ for a given set of values related to the film thickness (which may be finite or zero) and to the optical properties of the substrate.</div>","PeriodicalId":101172,"journal":{"name":"Solar Cells","volume":"30 1","pages":"Pages 473-485"},"PeriodicalIF":0.0,"publicationDate":"1991-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1016/0379-6787(91)90079-5","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"75399041","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 11

Needs of the amorphous silicon program with respect to stabilized module performance 需要的非晶硅程序方面的稳定模块性能

Solar Cells Pub Date : 1991-05-01 Epub Date: 2003-03-05 DOI: 10.1016/0379-6787(91)90051-P

W. Luft, B. Stafford, B. von Roedern

引用次数: 2