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Surface passivation of polycrystalline, chalcogenide based photovoltaic cells 多晶硫化物基光伏电池的表面钝化
Solar Cells Pub Date : 1991-05-01 DOI: 10.1016/0379-6787(91)90037-P
David Cahen, Rommel Noufi
{"title":"Surface passivation of polycrystalline, chalcogenide based photovoltaic cells","authors":"David Cahen,&nbsp;Rommel Noufi","doi":"10.1016/0379-6787(91)90037-P","DOIUrl":"10.1016/0379-6787(91)90037-P","url":null,"abstract":"<div><p>We present a summary of our defect chemical microscopic model for the effect that annealing in air or oxygen has on CuInSe<sub>2</sub> and CdTe-based polycrystalline thin film solar cells and explain its generalization to other chalcogenide-based semiconductor devices. The summary includes a hypothesis for specific O<sub>2</sub> (molecule) and surface interaction. From the point of view of device performance, the model provides a specific chemical explanation for the conclusions obtained from device analyses that the performance of the present generation of polycrystalline cells of this type is mainly limited by recombination at grain surfaces and boundaries.</p></div>","PeriodicalId":101172,"journal":{"name":"Solar Cells","volume":"30 1","pages":"Pages 53-59"},"PeriodicalIF":0.0,"publicationDate":"1991-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1016/0379-6787(91)90037-P","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"84316826","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 53
Deposition of μc-Si and μc-SiC thin films by remote plasma-enhanced chemical-vapor deposition 远程等离子体增强化学气相沉积制备μc-Si和μc-SiC薄膜
Solar Cells Pub Date : 1991-05-01 DOI: 10.1016/0379-6787(91)90075-Z
G. Lucovsky, Cheng Wang, R.J. Nemanich, M.J. Williams
{"title":"Deposition of μc-Si and μc-SiC thin films by remote plasma-enhanced chemical-vapor deposition","authors":"G. Lucovsky,&nbsp;Cheng Wang,&nbsp;R.J. Nemanich,&nbsp;M.J. Williams","doi":"10.1016/0379-6787(91)90075-Z","DOIUrl":"10.1016/0379-6787(91)90075-Z","url":null,"abstract":"<div><p>This paper describes properties of microcrystalline silicon (μc-Si), and microcrystalline silicon-carbon (μc-SiC) thin films formed by the process of remote plasma-enhanced chemical-vapor deposition (PECVD). We discuss: (i) the way that the remote PECVD deposition process is applied to the deposition of μc-Si and μc-SiC thin films; (ii) the characterization and properties of the intrinsic and doped μc-Si thin film materials; (iii) the characterization and properties of the intrinsic and doped μc-SiC thin film materials; and (iv) the application of remote PECVD μc-Si and μc-SiC thin films in device structures.</p></div>","PeriodicalId":101172,"journal":{"name":"Solar Cells","volume":"30 1","pages":"Pages 419-434"},"PeriodicalIF":0.0,"publicationDate":"1991-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1016/0379-6787(91)90075-Z","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"87071330","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 14
Non-linear recombination processes in photovoltaic semiconductors 光伏半导体中的非线性复合过程
Solar Cells Pub Date : 1991-05-01 DOI: 10.1016/0379-6787(91)90049-U
R.K. Ahrenkiel, B.M. Keyes, D.J. Dunlavy
{"title":"Non-linear recombination processes in photovoltaic semiconductors","authors":"R.K. Ahrenkiel,&nbsp;B.M. Keyes,&nbsp;D.J. Dunlavy","doi":"10.1016/0379-6787(91)90049-U","DOIUrl":"10.1016/0379-6787(91)90049-U","url":null,"abstract":"<div><p>The single-lifetime model is commonly used to describe recombination in photovoltaic materials. Here we describe two non-linear processes which affect the applicability of that model. Photon recycling is observed in direct band gap materials such as GaAs. This self-absorption and secondary emission of photons makes the effective radiative lifetime a function of device geometry. The saturation of recombination centers by minority carriers produces light intensity dependent lifetimes when the former are present. These effects need to be considered in device design and modeling.</p></div>","PeriodicalId":101172,"journal":{"name":"Solar Cells","volume":"30 1","pages":"Pages 163-176"},"PeriodicalIF":0.0,"publicationDate":"1991-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1016/0379-6787(91)90049-U","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"82935457","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 14
Needs of the amorphous silicon program with respect to stabilized module performance 需要的非晶硅程序方面的稳定模块性能
Solar Cells Pub Date : 1991-05-01 DOI: 10.1016/0379-6787(91)90051-P
W. Luft, B. Stafford, B. von Roedern
{"title":"Needs of the amorphous silicon program with respect to stabilized module performance","authors":"W. Luft,&nbsp;B. Stafford,&nbsp;B. von Roedern","doi":"10.1016/0379-6787(91)90051-P","DOIUrl":"10.1016/0379-6787(91)90051-P","url":null,"abstract":"<div><p>Amorphous silicon technology offers an avenue for low-cost thin film photovoltaic applications. The performance of amorphous silicon-based solar cells is limited by light-induced degradation. Inadequate description of the electronic phenomena in these materials and devices hampers resolution of this problem. We are posing questions which should stimulate researchers to develop better descriptions for device performance and better microscopic models for defect sites. The issue of Staebler-Wronski degradation should not be addressed separately from initial performance, but research should focus on material and device properties in the stabilized state. The main focus of a-Si:H research sponsored by the U.S. Department of Energy will be improvement of stabilized performance, which we anticipate to accomplish through focused development of optimized multijunction device structures, combined with an improved understanding of materials.</p></div>","PeriodicalId":101172,"journal":{"name":"Solar Cells","volume":"30 1","pages":"Pages 195-205"},"PeriodicalIF":0.0,"publicationDate":"1991-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1016/0379-6787(91)90051-P","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"88006297","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Broad band spectroscopic ellipsometry for the characterization of photovoltaic materials 用于光伏材料表征的宽带椭圆偏振光谱
Solar Cells Pub Date : 1991-05-01 DOI: 10.1016/0379-6787(91)90079-5
F.A. Abou-Elfotouh, G.S. Horner, T.J. Coutts, M.W. Wanlass
{"title":"Broad band spectroscopic ellipsometry for the characterization of photovoltaic materials","authors":"F.A. Abou-Elfotouh,&nbsp;G.S. Horner,&nbsp;T.J. Coutts,&nbsp;M.W. Wanlass","doi":"10.1016/0379-6787(91)90079-5","DOIUrl":"10.1016/0379-6787(91)90079-5","url":null,"abstract":"<div><p>The availability of commercial spectroscopic ellipsometers (SE) has been restricted to the UV-visible range from 250–900 nm. Although this is useful for many applications, it must be extended to the near IR region (up to 1700 nm) for the study of the optical behavior of most photovoltaic materials. This paper discusses the development of a broad band (300–1700 nm) SE which has been used to measure the optical characteristics of various materials. Among these are the polycrystalline thin film materials, CuInSe<sub>2</sub> and CdTe (for which single crystal samples have also been investigated), and materials for high efficiency cascade solar cells including InP, InGaAs and InGaAsP. Most of these data are not presently available over such a wide spectral range.</p><p>Experimentally, a rotating polarizer-fixed analyzer ellipsometer with an a.c. detection system has been developed for accurate measurement of ψ and Δ, the relevant ellipsometric parameters, in the near IR. This approach has certain advantages over the rotating analyzer-fixed polarizer systems including reduced sensitivity to room light. The analytical methods include the use of a specially developed computer modeling program which gives ψ and Δ for a given set of values related to the film thickness (which may be finite or zero) and to the optical properties of the substrate.</p></div>","PeriodicalId":101172,"journal":{"name":"Solar Cells","volume":"30 1","pages":"Pages 473-485"},"PeriodicalIF":0.0,"publicationDate":"1991-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1016/0379-6787(91)90079-5","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"75399041","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 11
Silicon float-zoned crystal growth for high minority charge-carrier lifetime material applications 用于高少数载流子寿命材料的硅浮子带晶体生长
Solar Cells Pub Date : 1991-05-01 DOI: 10.1016/0379-6787(91)90032-K
T.F. Ciszek
{"title":"Silicon float-zoned crystal growth for high minority charge-carrier lifetime material applications","authors":"T.F. Ciszek","doi":"10.1016/0379-6787(91)90032-K","DOIUrl":"10.1016/0379-6787(91)90032-K","url":null,"abstract":"<div><p>The performance of a number of electronic devices such as solar cells, power devices, and transistors is strongly influenced by minority charge-carrier lifetimes in the semi-conductor material. The conditions for float-zone growth of silicon crystals for these devices can be adjusted to achieve charge-carrier lifetimes as long as 20 ms. Low impurity levels are of course necessary, and the material must be free of dislocations and grain boundaries. Microdefects such as swirl defects (A- or B-type) and frozen-in defects are also carrier recombination centers, and thus must be controlled during crystal growth. The type and density of defects can be altered by changing the growth conditions. Long minority charge-carrier lifetimes are achieved at moderately high growth rates and low thermal gradients during crystal growth.</p></div>","PeriodicalId":101172,"journal":{"name":"Solar Cells","volume":"30 1","pages":"Pages 5-13"},"PeriodicalIF":0.0,"publicationDate":"1991-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1016/0379-6787(91)90032-K","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"90697298","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Author index of volume 30 第30卷作者索引
Solar Cells Pub Date : 1991-05-01 DOI: 10.1016/0379-6787(91)90089-8
{"title":"Author index of volume 30","authors":"","doi":"10.1016/0379-6787(91)90089-8","DOIUrl":"https://doi.org/10.1016/0379-6787(91)90089-8","url":null,"abstract":"","PeriodicalId":101172,"journal":{"name":"Solar Cells","volume":"30 1","pages":"Pages 573-574"},"PeriodicalIF":0.0,"publicationDate":"1991-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1016/0379-6787(91)90089-8","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"137344393","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Field test results for the 6 MW Carrizo solar photovoltaic power plant 6兆瓦Carrizo太阳能光伏电站的现场测试结果
Solar Cells Pub Date : 1991-05-01 DOI: 10.1016/0379-6787(91)90088-7
Andrew L. Rosenthal, Cary G. Lane
{"title":"Field test results for the 6 MW Carrizo solar photovoltaic power plant","authors":"Andrew L. Rosenthal,&nbsp;Cary G. Lane","doi":"10.1016/0379-6787(91)90088-7","DOIUrl":"10.1016/0379-6787(91)90088-7","url":null,"abstract":"<div><p>Testing of subgroups, trackers, and laminates was performed at the Carrizo Solar Photovoltaic Power Plant. Testing was performed to characterize the effects of ethylene vinyl acetate (EVA) degradation at the plant. EVA degradation is believed to have been accelerated by the high operating temperatures accompanying the use of mirrors to concentrate sunlight. Testing of 128 laminates revealed that degradation is highly non-uniform. Measured laminate peak power values ranged from 8.6 W to 47.8 W with an average value of 32.6 W. This average was 35.9% below the installed laminate rating at similar conditions. Mismatch between laminates contributed an additional power loss of 11.1%. Mismatch was found to increase with laminate temperature. One tracker was tested with and without mirror enhancement. It produced 3046.5 W with mirrors and 3275.9 W when the mirrors were covered. Preliminary results indicate that removal of the mirrors would increase the plant's peak power output on hot days.</p></div>","PeriodicalId":101172,"journal":{"name":"Solar Cells","volume":"30 1","pages":"Pages 563-571"},"PeriodicalIF":0.0,"publicationDate":"1991-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1016/0379-6787(91)90088-7","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"77336635","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 38
Three-year performance and reliability analysis of a 4 kW amorphous-silicon photovoltaic system in Michigan 密歇根州4kw非晶硅光伏系统三年性能与可靠性分析
Solar Cells Pub Date : 1991-05-01 DOI: 10.1016/0379-6787(91)90085-4
Robert G. Pratt
{"title":"Three-year performance and reliability analysis of a 4 kW amorphous-silicon photovoltaic system in Michigan","authors":"Robert G. Pratt","doi":"10.1016/0379-6787(91)90085-4","DOIUrl":"10.1016/0379-6787(91)90085-4","url":null,"abstract":"<div><p>A 4 kW photovoltaic (PV) power system composed of 144 Sovonics R100 amorphous-silicon alloy modules was constructed in southeastern Michigan in early 1987. During more than three years of continuous operation, the system and its components have been reliable and durable. Analysis of array performance has shown initial degradation, followed by stabilization. Cyclic efficiency variations have been found to be related to solar spectrum, ambient temperature and past history of temperature.</p></div>","PeriodicalId":101172,"journal":{"name":"Solar Cells","volume":"30 1","pages":"Pages 535-547"},"PeriodicalIF":0.0,"publicationDate":"1991-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1016/0379-6787(91)90085-4","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"78045281","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
Early experiences of the 15 kW NMPC demand-side management photovoltaic project 15千瓦NMPC需求侧管理光伏项目前期经验
Solar Cells Pub Date : 1991-05-01 DOI: 10.1016/0379-6787(91)90084-3
Bruce Bailey, Richard Perez, John Doty, Kurt Elsholz, Ronald Stewart, William Huse
{"title":"Early experiences of the 15 kW NMPC demand-side management photovoltaic project","authors":"Bruce Bailey,&nbsp;Richard Perez,&nbsp;John Doty,&nbsp;Kurt Elsholz,&nbsp;Ronald Stewart,&nbsp;William Huse","doi":"10.1016/0379-6787(91)90084-3","DOIUrl":"10.1016/0379-6787(91)90084-3","url":null,"abstract":"<div><p>The Niagara Mohawk Power Corporation has begun operation of a photovoltaic (PV) system in upstate New York to study the summer peak load reduction capability of grid-connected PV systems serving commercial buildings. The roof-retrofitted system consists of a 151 m<sup>2</sup> polycrystalline silicon module area rated at 15.4 kW d.c., three one-axis trackers, and a high efficiency power conditioning unit. Preliminary results from the first two months of operation indicate PV system output is at a high fraction of capacity when the building experiences its electrical demand peaks. Ongoing studies are evaluating a cross-section of commercial customer load profiles in terms of the probability of peak demand reduction.</p></div>","PeriodicalId":101172,"journal":{"name":"Solar Cells","volume":"30 1","pages":"Pages 529-533"},"PeriodicalIF":0.0,"publicationDate":"1991-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1016/0379-6787(91)90084-3","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"77144617","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 7
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