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Silicon float-zoned crystal growth for high minority charge-carrier lifetime material applications 用于高少数载流子寿命材料的硅浮子带晶体生长
Solar Cells Pub Date : 1991-05-01 Epub Date: 2003-03-05 DOI: 10.1016/0379-6787(91)90032-K
T.F. Ciszek
{"title":"Silicon float-zoned crystal growth for high minority charge-carrier lifetime material applications","authors":"T.F. Ciszek","doi":"10.1016/0379-6787(91)90032-K","DOIUrl":"10.1016/0379-6787(91)90032-K","url":null,"abstract":"<div><p>The performance of a number of electronic devices such as solar cells, power devices, and transistors is strongly influenced by minority charge-carrier lifetimes in the semi-conductor material. The conditions for float-zone growth of silicon crystals for these devices can be adjusted to achieve charge-carrier lifetimes as long as 20 ms. Low impurity levels are of course necessary, and the material must be free of dislocations and grain boundaries. Microdefects such as swirl defects (A- or B-type) and frozen-in defects are also carrier recombination centers, and thus must be controlled during crystal growth. The type and density of defects can be altered by changing the growth conditions. Long minority charge-carrier lifetimes are achieved at moderately high growth rates and low thermal gradients during crystal growth.</p></div>","PeriodicalId":101172,"journal":{"name":"Solar Cells","volume":"30 1","pages":"Pages 5-13"},"PeriodicalIF":0.0,"publicationDate":"1991-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1016/0379-6787(91)90032-K","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"90697298","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Surface passivation of polycrystalline, chalcogenide based photovoltaic cells 多晶硫化物基光伏电池的表面钝化
Solar Cells Pub Date : 1991-05-01 Epub Date: 2003-03-05 DOI: 10.1016/0379-6787(91)90037-P
David Cahen, Rommel Noufi
{"title":"Surface passivation of polycrystalline, chalcogenide based photovoltaic cells","authors":"David Cahen,&nbsp;Rommel Noufi","doi":"10.1016/0379-6787(91)90037-P","DOIUrl":"10.1016/0379-6787(91)90037-P","url":null,"abstract":"<div><p>We present a summary of our defect chemical microscopic model for the effect that annealing in air or oxygen has on CuInSe<sub>2</sub> and CdTe-based polycrystalline thin film solar cells and explain its generalization to other chalcogenide-based semiconductor devices. The summary includes a hypothesis for specific O<sub>2</sub> (molecule) and surface interaction. From the point of view of device performance, the model provides a specific chemical explanation for the conclusions obtained from device analyses that the performance of the present generation of polycrystalline cells of this type is mainly limited by recombination at grain surfaces and boundaries.</p></div>","PeriodicalId":101172,"journal":{"name":"Solar Cells","volume":"30 1","pages":"Pages 53-59"},"PeriodicalIF":0.0,"publicationDate":"1991-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1016/0379-6787(91)90037-P","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"84316826","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 53
CuInSe2 photovoltaic modules CuInSe2光伏组件
Solar Cells Pub Date : 1991-05-01 Epub Date: 2003-03-05 DOI: 10.1016/0379-6787(91)90045-Q
K.W. Mitchell, W. Chesarek, D.R. Willett, C. Eberspacher, J.H. Ermer, R.R. Gay
{"title":"CuInSe2 photovoltaic modules","authors":"K.W. Mitchell,&nbsp;W. Chesarek,&nbsp;D.R. Willett,&nbsp;C. Eberspacher,&nbsp;J.H. Ermer,&nbsp;R.R. Gay","doi":"10.1016/0379-6787(91)90045-Q","DOIUrl":"10.1016/0379-6787(91)90045-Q","url":null,"abstract":"<div><p>This paper reviews the status of CuInSe<sub>2</sub> (CIS) module development. The potential of CIS for high power, thin film photovoltaic modules is demonstrated by the achievement of 14.1% active area cell efficiencies and unlaminated module power outputs of 10.5 W (11.2% aperture efficiency) on 940 cm<sup>2</sup> modules and 37.8 W (9.7% aperture efficiency) on 3900 m<sup>2</sup> modules. The definition of 0.4 m<sup>2</sup> CIS module pilot production is progressing.</p></div>","PeriodicalId":101172,"journal":{"name":"Solar Cells","volume":"30 1","pages":"Pages 131-136"},"PeriodicalIF":0.0,"publicationDate":"1991-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1016/0379-6787(91)90045-Q","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"89113042","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 14
The formation of CuInSe2 thin films by rapid thermal processing 快速热加工制备CuInSe2薄膜
Solar Cells Pub Date : 1991-05-01 Epub Date: 2003-03-05 DOI: 10.1016/0379-6787(91)90039-R
G.D. Mooney , A.M. Hermann, J.R. Tuttle, D.S. Albin, R. Noufi
{"title":"The formation of CuInSe2 thin films by rapid thermal processing","authors":"G.D. Mooney ,&nbsp;A.M. Hermann,&nbsp;J.R. Tuttle,&nbsp;D.S. Albin,&nbsp;R. Noufi","doi":"10.1016/0379-6787(91)90039-R","DOIUrl":"10.1016/0379-6787(91)90039-R","url":null,"abstract":"<div><p>Formation of polycrystalline thin film CuInSe<sub>2</sub> was achieved by the rapid thermal processing of vacuum-deposited copper, indium, and selenium. Films were fabricated and characterized in three composition regions: copper-poor (approximately 20 at.% Cu). stoichiometric (25 at.% Cu) and copper-rich (approximately 28 at.% Cu). Characterization results including X-ray diffraction analysis, electron probe for microanalysis, scanning electron microscopy, and optical reflection and transmission measurements are presented. The results show that nearly single-phase material has been formed from co-deposited precursors with a post-deposition annealing time of less than 2 min. The films have smooth morphologies amenable for photovoltaic device fabrication, optical absorption coefficients in the high 10<sup>4</sup> cm<sup>−1</sup> range, and an optical band gap of 1.0 eV.</p></div>","PeriodicalId":101172,"journal":{"name":"Solar Cells","volume":"30 1","pages":"Pages 69-77"},"PeriodicalIF":0.0,"publicationDate":"1991-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1016/0379-6787(91)90039-R","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"80594447","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 10
Deposition of μc-Si and μc-SiC thin films by remote plasma-enhanced chemical-vapor deposition 远程等离子体增强化学气相沉积制备μc-Si和μc-SiC薄膜
Solar Cells Pub Date : 1991-05-01 Epub Date: 2003-03-05 DOI: 10.1016/0379-6787(91)90075-Z
G. Lucovsky, Cheng Wang, R.J. Nemanich, M.J. Williams
{"title":"Deposition of μc-Si and μc-SiC thin films by remote plasma-enhanced chemical-vapor deposition","authors":"G. Lucovsky,&nbsp;Cheng Wang,&nbsp;R.J. Nemanich,&nbsp;M.J. Williams","doi":"10.1016/0379-6787(91)90075-Z","DOIUrl":"10.1016/0379-6787(91)90075-Z","url":null,"abstract":"<div><p>This paper describes properties of microcrystalline silicon (μc-Si), and microcrystalline silicon-carbon (μc-SiC) thin films formed by the process of remote plasma-enhanced chemical-vapor deposition (PECVD). We discuss: (i) the way that the remote PECVD deposition process is applied to the deposition of μc-Si and μc-SiC thin films; (ii) the characterization and properties of the intrinsic and doped μc-Si thin film materials; (iii) the characterization and properties of the intrinsic and doped μc-SiC thin film materials; and (iv) the application of remote PECVD μc-Si and μc-SiC thin films in device structures.</p></div>","PeriodicalId":101172,"journal":{"name":"Solar Cells","volume":"30 1","pages":"Pages 419-434"},"PeriodicalIF":0.0,"publicationDate":"1991-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1016/0379-6787(91)90075-Z","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"87071330","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 14
Author index of volume 30 第30卷作者索引
Solar Cells Pub Date : 1991-05-01 Epub Date: 2003-03-05 DOI: 10.1016/0379-6787(91)90089-8
{"title":"Author index of volume 30","authors":"","doi":"10.1016/0379-6787(91)90089-8","DOIUrl":"https://doi.org/10.1016/0379-6787(91)90089-8","url":null,"abstract":"","PeriodicalId":101172,"journal":{"name":"Solar Cells","volume":"30 1","pages":"Pages 573-574"},"PeriodicalIF":0.0,"publicationDate":"1991-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1016/0379-6787(91)90089-8","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"137344393","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Non-linear recombination processes in photovoltaic semiconductors 光伏半导体中的非线性复合过程
Solar Cells Pub Date : 1991-05-01 Epub Date: 2003-03-05 DOI: 10.1016/0379-6787(91)90049-U
R.K. Ahrenkiel, B.M. Keyes, D.J. Dunlavy
{"title":"Non-linear recombination processes in photovoltaic semiconductors","authors":"R.K. Ahrenkiel,&nbsp;B.M. Keyes,&nbsp;D.J. Dunlavy","doi":"10.1016/0379-6787(91)90049-U","DOIUrl":"10.1016/0379-6787(91)90049-U","url":null,"abstract":"<div><p>The single-lifetime model is commonly used to describe recombination in photovoltaic materials. Here we describe two non-linear processes which affect the applicability of that model. Photon recycling is observed in direct band gap materials such as GaAs. This self-absorption and secondary emission of photons makes the effective radiative lifetime a function of device geometry. The saturation of recombination centers by minority carriers produces light intensity dependent lifetimes when the former are present. These effects need to be considered in device design and modeling.</p></div>","PeriodicalId":101172,"journal":{"name":"Solar Cells","volume":"30 1","pages":"Pages 163-176"},"PeriodicalIF":0.0,"publicationDate":"1991-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1016/0379-6787(91)90049-U","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"82935457","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 14
Early experiences of the 15 kW NMPC demand-side management photovoltaic project 15千瓦NMPC需求侧管理光伏项目前期经验
Solar Cells Pub Date : 1991-05-01 Epub Date: 2003-03-05 DOI: 10.1016/0379-6787(91)90084-3
Bruce Bailey, Richard Perez, John Doty, Kurt Elsholz, Ronald Stewart, William Huse
{"title":"Early experiences of the 15 kW NMPC demand-side management photovoltaic project","authors":"Bruce Bailey,&nbsp;Richard Perez,&nbsp;John Doty,&nbsp;Kurt Elsholz,&nbsp;Ronald Stewart,&nbsp;William Huse","doi":"10.1016/0379-6787(91)90084-3","DOIUrl":"10.1016/0379-6787(91)90084-3","url":null,"abstract":"<div><p>The Niagara Mohawk Power Corporation has begun operation of a photovoltaic (PV) system in upstate New York to study the summer peak load reduction capability of grid-connected PV systems serving commercial buildings. The roof-retrofitted system consists of a 151 m<sup>2</sup> polycrystalline silicon module area rated at 15.4 kW d.c., three one-axis trackers, and a high efficiency power conditioning unit. Preliminary results from the first two months of operation indicate PV system output is at a high fraction of capacity when the building experiences its electrical demand peaks. Ongoing studies are evaluating a cross-section of commercial customer load profiles in terms of the probability of peak demand reduction.</p></div>","PeriodicalId":101172,"journal":{"name":"Solar Cells","volume":"30 1","pages":"Pages 529-533"},"PeriodicalIF":0.0,"publicationDate":"1991-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1016/0379-6787(91)90084-3","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"77144617","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 7
Characterization of the defect levels in copper indium diselenide 二硒化铜铟缺陷水平的表征
Solar Cells Pub Date : 1991-05-01 Epub Date: 2003-03-05 DOI: 10.1016/0379-6787(91)90048-T
F.A. Abou-Elfotouh, H. Moutinho, A. Bakry, T.J. Coutts, L.L. Kazmerski
{"title":"Characterization of the defect levels in copper indium diselenide","authors":"F.A. Abou-Elfotouh,&nbsp;H. Moutinho,&nbsp;A. Bakry,&nbsp;T.J. Coutts,&nbsp;L.L. Kazmerski","doi":"10.1016/0379-6787(91)90048-T","DOIUrl":"10.1016/0379-6787(91)90048-T","url":null,"abstract":"<div><p>High-resolution photoluminescence (PL) measurements were carried out at 10 K to identify the energy levels associated with the various defect states dominating the semiconductor CuInSe<sub>2</sub> (CIS). PL measurements were taken on the bare surfaces of both thin film and single-crystal (polished and cleaved) samples and through a (Cd,Zn)S window layer deposited by thermal co-evaporation onto the CIS absorber surface. A complete energy band diagram is proposed which identifies the origin of the 12 intrinsic defect states expected in this material. The effects of surface and heat treatments, used in device fabrication processing, on the existence and generation of defect states (deep and shallow) are identified and correlated with the device performance. The inferior single-crystal device performance is correlated with presence of a high density of process-generated radiative surface recombination states and trap levels.</p></div>","PeriodicalId":101172,"journal":{"name":"Solar Cells","volume":"30 1","pages":"Pages 151-160"},"PeriodicalIF":0.0,"publicationDate":"1991-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1016/0379-6787(91)90048-T","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"90716414","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 67
Field test results for the 6 MW Carrizo solar photovoltaic power plant 6兆瓦Carrizo太阳能光伏电站的现场测试结果
Solar Cells Pub Date : 1991-05-01 Epub Date: 2003-03-05 DOI: 10.1016/0379-6787(91)90088-7
Andrew L. Rosenthal, Cary G. Lane
{"title":"Field test results for the 6 MW Carrizo solar photovoltaic power plant","authors":"Andrew L. Rosenthal,&nbsp;Cary G. Lane","doi":"10.1016/0379-6787(91)90088-7","DOIUrl":"10.1016/0379-6787(91)90088-7","url":null,"abstract":"<div><p>Testing of subgroups, trackers, and laminates was performed at the Carrizo Solar Photovoltaic Power Plant. Testing was performed to characterize the effects of ethylene vinyl acetate (EVA) degradation at the plant. EVA degradation is believed to have been accelerated by the high operating temperatures accompanying the use of mirrors to concentrate sunlight. Testing of 128 laminates revealed that degradation is highly non-uniform. Measured laminate peak power values ranged from 8.6 W to 47.8 W with an average value of 32.6 W. This average was 35.9% below the installed laminate rating at similar conditions. Mismatch between laminates contributed an additional power loss of 11.1%. Mismatch was found to increase with laminate temperature. One tracker was tested with and without mirror enhancement. It produced 3046.5 W with mirrors and 3275.9 W when the mirrors were covered. Preliminary results indicate that removal of the mirrors would increase the plant's peak power output on hot days.</p></div>","PeriodicalId":101172,"journal":{"name":"Solar Cells","volume":"30 1","pages":"Pages 563-571"},"PeriodicalIF":0.0,"publicationDate":"1991-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1016/0379-6787(91)90088-7","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"77336635","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 38
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