多结太阳能电池的材料方面

Solar Cells Pub Date : 1991-05-01 DOI:10.1016/0379-6787(91)90063-U

S.A. Hussien, P. Colter, A. Dip, J.R. Gong, M.U. Erdogan, S.M. Bedair

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引用次数: 4

摘要

采用原子层外延(ALE)技术在AlGaAs/GaAs体系中生长了多个级联太阳能电池结构。构建了一个生长速率为0.6 μm h−1的ALE反应器。在1015 ~ 1019 cm−3和1016 ~ 1020 cm−3范围内掺杂p型背景碳，生长出器件质量的GaAs和AsxGa1−xAs薄膜。通过SiH4掺杂制备了n型薄膜，其载流子浓度在1016 ~ 1018 cm−3之间。此外，还讨论了ALE技术在光伏领域的潜在应用。

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Materials aspects of multijunction solar cells

Atomic layer epitaxy (ALE) was used to grow several components of the cascade solar cell structure in the AlGaAs/GaAs system. An ALE reactor was constructed for multiwafer growth with a growth rate of 0.6 μm h⁻¹. Device quality GaAs and $As_{x} Ga_{1−x} As$ films were grown with p-type background carbon doping in the ranges 10¹⁵–10¹⁹ cm⁻³ and 10¹⁶–10²⁰ cm⁻³ respectively. N-type films were achieved by SiH₄ doping, producing carrier concentrations in the range 10¹⁶–10¹⁸ cm⁻³. In addition, the potential applications of the ALE technique in the photovoltaic field are discussed.

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来源期刊

Solar Cells

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