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Progress in Crystal Growth and Characterization最新文献

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The growth and characterization of ZnSe epilayers grown by VPE and MOCVD VPE和MOCVD生长ZnSe薄膜的生长和表征
Progress in Crystal Growth and Characterization Pub Date : 1988-01-01 DOI: 10.1016/0146-3535(88)90008-1
Yan-Kuin Su, Chung-Cheng Chang, Chung-Chuang Wei
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引用次数: 2
Micromonocrystals of refractory compounds: composition, structure and properties 难熔化合物的微单晶:组成、结构和性能
Progress in Crystal Growth and Characterization Pub Date : 1988-01-01 DOI: 10.1016/0146-3535(88)90022-6
T.N. Millers , A.A. Kuzjukévičs
{"title":"Micromonocrystals of refractory compounds: composition, structure and properties","authors":"T.N. Millers ,&nbsp;A.A. Kuzjukévičs","doi":"10.1016/0146-3535(88)90022-6","DOIUrl":"10.1016/0146-3535(88)90022-6","url":null,"abstract":"","PeriodicalId":101046,"journal":{"name":"Progress in Crystal Growth and Characterization","volume":"16 ","pages":"Pages 367-438"},"PeriodicalIF":0.0,"publicationDate":"1988-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1016/0146-3535(88)90022-6","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"79220494","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 8
Compound index 复合索引
Progress in Crystal Growth and Characterization Pub Date : 1988-01-01 DOI: 10.1016/0146-3535(88)90024-X
{"title":"Compound index","authors":"","doi":"10.1016/0146-3535(88)90024-X","DOIUrl":"https://doi.org/10.1016/0146-3535(88)90024-X","url":null,"abstract":"","PeriodicalId":101046,"journal":{"name":"Progress in Crystal Growth and Characterization","volume":"16 ","pages":"Pages 445-448"},"PeriodicalIF":0.0,"publicationDate":"1988-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1016/0146-3535(88)90024-X","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"137436790","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Low cost, non-vacuum techniques for the preparation of thin/thick films for photovoltaic applications 低成本，非真空技术制备光伏应用的薄/厚薄膜
Progress in Crystal Growth and Characterization Pub Date : 1988-01-01 DOI: 10.1016/0146-3535(88)90006-8
S. Oktik
{"title":"Low cost, non-vacuum techniques for the preparation of thin/thick films for photovoltaic applications","authors":"S. Oktik","doi":"10.1016/0146-3535(88)90006-8","DOIUrl":"10.1016/0146-3535(88)90006-8","url":null,"abstract":"<div><p>The major objectives of solar cell research and development programmes are to improve the efficiency, stability and lifetime of photovoltaic devices. However, for terrestrial applications, the reduction in the basic cost of the cell is an important obstacle to overcome. The purpose of this study is, therefore, to review some of the more widely used, low-cost, non-vacuum deposition techniques; namely, spray pyrolysis, screen printing and electrodeposition. Each is dealt with under three main headings. These include (a) historical background and general aspects, (b) up-to-date description of the status of materials compatible with the deposition techniques and (c) structural, electrical and optical properties of deposited thin/thick films.</p></div>","PeriodicalId":101046,"journal":{"name":"Progress in Crystal Growth and Characterization","volume":"17 3","pages":"Pages 171-240"},"PeriodicalIF":0.0,"publicationDate":"1988-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1016/0146-3535(88)90006-8","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"75303760","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 41
Deformation and rupture of crystals with covalent interatomic bonds 具有共价原子间键的晶体的变形和破裂
Progress in Crystal Growth and Characterization Pub Date : 1988-01-01 DOI: 10.1016/0146-3535(88)90019-6
V.I. Trefilov , Yu.V. Milman , O.N. Grigoriev
{"title":"Deformation and rupture of crystals with covalent interatomic bonds","authors":"V.I. Trefilov ,&nbsp;Yu.V. Milman ,&nbsp;O.N. Grigoriev","doi":"10.1016/0146-3535(88)90019-6","DOIUrl":"10.1016/0146-3535(88)90019-6","url":null,"abstract":"","PeriodicalId":101046,"journal":{"name":"Progress in Crystal Growth and Characterization","volume":"16 ","pages":"Pages 225-277"},"PeriodicalIF":0.0,"publicationDate":"1988-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1016/0146-3535(88)90019-6","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"79039781","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 21
Diamond and diamond-like films: Deposition from the vapour phase, structure and properties 金刚石和类金刚石薄膜:气相沉积，结构和性能
Progress in Crystal Growth and Characterization Pub Date : 1988-01-01 DOI: 10.1016/0146-3535(88)90001-9
B.V. Spitsyn, L.L. Bouilov, B.V. Derjaguin
{"title":"Diamond and diamond-like films: Deposition from the vapour phase, structure and properties","authors":"B.V. Spitsyn,&nbsp;L.L. Bouilov,&nbsp;B.V. Derjaguin","doi":"10.1016/0146-3535(88)90001-9","DOIUrl":"10.1016/0146-3535(88)90001-9","url":null,"abstract":"<div><p>A review is presented of the synthesis of carbon films with diamond and diamond-like structures by condensing ion beams and by ionic, plasma, chemical and other methods of deposition. The influence of the thermal and electric activation of the gas phase on the process of producing films with different types of carbon bonds has been considered. Considerable attention has been paid to clarification of the conditions for the selective growth of diamond and the factors determining the formation of a predominantly tetrahedral coordination of carbon atoms in diamond-like films. Mechanical, optical and other properties of the films have been related to the temperature of the substrate and the energy of condensing particles. It has been noted that the thermostability of polycrystalline diamond layers is noticeably better than that of quasi-amorphous diamond-like ones, even though the microhardness of the latter may be the same order as that of natural diamond. Prospects for applying diamond and diamond-like films as wear-resistant, corrosion-proof and dielectric coatings have been discussed.</p></div>","PeriodicalId":101046,"journal":{"name":"Progress in Crystal Growth and Characterization","volume":"17 2","pages":"Pages 79-170"},"PeriodicalIF":0.0,"publicationDate":"1988-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1016/0146-3535(88)90001-9","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"79983257","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 65
Problems of stoichiometry and structural defects in single crystals of refractory compounds prepared by different methods 不同方法制备的难熔化合物单晶的化学计量学和结构缺陷问题
Progress in Crystal Growth and Characterization Pub Date : 1988-01-01 DOI: 10.1016/0146-3535(88)90017-2
T. Lundström , M.M. Korsukova , V.N. Gurin
{"title":"Problems of stoichiometry and structural defects in single crystals of refractory compounds prepared by different methods","authors":"T. Lundström ,&nbsp;M.M. Korsukova ,&nbsp;V.N. Gurin","doi":"10.1016/0146-3535(88)90017-2","DOIUrl":"10.1016/0146-3535(88)90017-2","url":null,"abstract":"","PeriodicalId":101046,"journal":{"name":"Progress in Crystal Growth and Characterization","volume":"16 ","pages":"Pages 143-178"},"PeriodicalIF":0.0,"publicationDate":"1988-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1016/0146-3535(88)90017-2","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"86460274","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 7
Crystal growth from boiling solutions 从沸腾溶液中生长晶体
Progress in Crystal Growth and Characterization Pub Date : 1988-01-01 DOI: 10.1016/0146-3535(88)90003-2
R. Rodriguez-Clemente , S. Veintemillas-Verdaguer , F. Rull-Pérez , K. Sangwal
{"title":"Crystal growth from boiling solutions","authors":"R. Rodriguez-Clemente ,&nbsp;S. Veintemillas-Verdaguer ,&nbsp;F. Rull-Pérez ,&nbsp;K. Sangwal","doi":"10.1016/0146-3535(88)90003-2","DOIUrl":"10.1016/0146-3535(88)90003-2","url":null,"abstract":"<div><p>This paper reviews the present status of crystal growth from boiling solutions. The understanding of the peculiar characteristic of this technique: high rates of growth, restricted aplicability to substances presenting complexing phenomena in solution, high crystal perfection, etc, makes interesting to analyze the structure of saturated solutions and the nature of crystal growth units.</p><p>After a discussion of the role of complex formation and solute association, metastable zone width, crystal solution interface and bubbling in boiling solutions in applying this technique, the experimental set-ups reported so far are narrated.</p><p>Finally, the macro and micromorphology, the growth kinetics and the perfection of the obtained crystals are described and discussed.</p></div>","PeriodicalId":101046,"journal":{"name":"Progress in Crystal Growth and Characterization","volume":"17 1","pages":"Pages 1-40"},"PeriodicalIF":0.0,"publicationDate":"1988-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1016/0146-3535(88)90003-2","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"80528569","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 12
The problems of high-temperature crystallization 高温结晶问题
Progress in Crystal Growth and Characterization Pub Date : 1988-01-01 DOI: 10.1016/0146-3535(88)90015-9
Kh.S. Bagdasarov
{"title":"The problems of high-temperature crystallization","authors":"Kh.S. Bagdasarov","doi":"10.1016/0146-3535(88)90015-9","DOIUrl":"10.1016/0146-3535(88)90015-9","url":null,"abstract":"","PeriodicalId":101046,"journal":{"name":"Progress in Crystal Growth and Characterization","volume":"16 ","pages":"Pages 59-80"},"PeriodicalIF":0.0,"publicationDate":"1988-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1016/0146-3535(88)90015-9","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"80146975","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Crystal growth of gallium nitride 氮化镓的晶体生长
Progress in Crystal Growth and Characterization Pub Date : 1988-01-01 DOI: 10.1016/0146-3535(88)90005-6
Dennis Elwell , Margaret M. Elwell
{"title":"Crystal growth of gallium nitride","authors":"Dennis Elwell ,&nbsp;Margaret M. Elwell","doi":"10.1016/0146-3535(88)90005-6","DOIUrl":"10.1016/0146-3535(88)90005-6","url":null,"abstract":"<div><p>A review is given of the methods which have been used to grow single crystals and epitaxial layers of gallium nitride. In view of the problems in growing bulk crystals, the main emphasis is on heteroepitaxy. Sapphire has been the most popular substrate material, but leads to severe stress because of lattice and expansion mismatch. The use of an intermediate AlN layer appears to alleviate this problem. Chemical vapor deposition using gallium chloride and ammonia has given the highest quality layers to date, but a native donor remains a persistent problem. The use of high pressures of nitrogen offers promise as a means of reducing the native donor concentration. Atomic layer epitaxy is an alternative technique which looks promising for film deposition under well-controlled conditions. The properties of GaN and device considerations are included briefly in this review.</p></div>","PeriodicalId":101046,"journal":{"name":"Progress in Crystal Growth and Characterization","volume":"17 1","pages":"Pages 53-78"},"PeriodicalIF":0.0,"publicationDate":"1988-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1016/0146-3535(88)90005-6","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"83104268","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 20
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