The growth and characterization of ZnSe epilayers grown by VPE and MOCVD

Abstract

Zinc selenide (ZnSe) is a useful semiconductor for homojunction or heterojunction optoelectronic devices. In this paper we review the fabrication techniques of vapor phase epitaxy (VPE) and metalorganic chemical vapor deposition (MOCVD) for the growth of ZnSe epilayers. These techniques can play important roles in achieving ZnSe blue light-emitting devices. Recent and future trends in growing these devices are also reviewed and studied.