{"title":"VPE和MOCVD生长ZnSe薄膜的生长和表征","authors":"Yan-Kuin Su, Chung-Cheng Chang, Chung-Chuang Wei","doi":"10.1016/0146-3535(88)90008-1","DOIUrl":null,"url":null,"abstract":"<div><p>Zinc selenide (ZnSe) is a useful semiconductor for homojunction or heterojunction optoelectronic devices. In this paper we review the fabrication techniques of vapor phase epitaxy (VPE) and metalorganic chemical vapor deposition (MOCVD) for the growth of ZnSe epilayers. These techniques can play important roles in achieving ZnSe blue light-emitting devices. Recent and future trends in growing these devices are also reviewed and studied.</p></div>","PeriodicalId":101046,"journal":{"name":"Progress in Crystal Growth and Characterization","volume":"17 4","pages":"Pages 241-263"},"PeriodicalIF":0.0000,"publicationDate":"1988-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1016/0146-3535(88)90008-1","citationCount":"2","resultStr":"{\"title\":\"The growth and characterization of ZnSe epilayers grown by VPE and MOCVD\",\"authors\":\"Yan-Kuin Su, Chung-Cheng Chang, Chung-Chuang Wei\",\"doi\":\"10.1016/0146-3535(88)90008-1\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<div><p>Zinc selenide (ZnSe) is a useful semiconductor for homojunction or heterojunction optoelectronic devices. In this paper we review the fabrication techniques of vapor phase epitaxy (VPE) and metalorganic chemical vapor deposition (MOCVD) for the growth of ZnSe epilayers. These techniques can play important roles in achieving ZnSe blue light-emitting devices. Recent and future trends in growing these devices are also reviewed and studied.</p></div>\",\"PeriodicalId\":101046,\"journal\":{\"name\":\"Progress in Crystal Growth and Characterization\",\"volume\":\"17 4\",\"pages\":\"Pages 241-263\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1988-01-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"https://sci-hub-pdf.com/10.1016/0146-3535(88)90008-1\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Progress in Crystal Growth and Characterization\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://www.sciencedirect.com/science/article/pii/0146353588900081\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Progress in Crystal Growth and Characterization","FirstCategoryId":"1085","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/0146353588900081","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
The growth and characterization of ZnSe epilayers grown by VPE and MOCVD
Zinc selenide (ZnSe) is a useful semiconductor for homojunction or heterojunction optoelectronic devices. In this paper we review the fabrication techniques of vapor phase epitaxy (VPE) and metalorganic chemical vapor deposition (MOCVD) for the growth of ZnSe epilayers. These techniques can play important roles in achieving ZnSe blue light-emitting devices. Recent and future trends in growing these devices are also reviewed and studied.
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