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Progress in Crystal Growth and Characterization最新文献

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MOMBE and MOVPE—A comparison of growth techniques MOMBE和movpe——生长技术的比较
Progress in Crystal Growth and Characterization Pub Date : 1989-01-01 DOI: 10.1016/0146-3535(89)90014-2
M. Weyers
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引用次数: 8
Application of X-ray energy-dispersive diffraction for characterization of materials under high pressure x射线能量色散衍射在高压下材料表征中的应用
Progress in Crystal Growth and Characterization Pub Date : 1989-01-01 DOI: 10.1016/0146-3535(89)90026-9
B. Buras , L. Gerward
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引用次数: 39
Metalorganic vapour phase epitaxy: Selected workshop topics 金属有机气相外延:研讨会主题选择
Progress in Crystal Growth and Characterization Pub Date : 1989-01-01 DOI: 10.1016/0146-3535(89)90008-7
Brian Mullin
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引用次数: 0
Applications of the divergent beam X-ray technique 发散束x射线技术的应用
Progress in Crystal Growth and Characterization Pub Date : 1989-01-01 DOI: 10.1016/0146-3535(89)90028-2
S. Weissmann , L.H. Lee
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引用次数: 3
EXAFS of catalytic materials 催化材料的EXAFS
Progress in Crystal Growth and Characterization Pub Date : 1989-01-01 DOI: 10.1016/0146-3535(89)90025-7
G. Sankar, G.U. Kulkarni, C.N.R. Rao
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引用次数: 6
X-ray diffraction studies of thin films and multilayer structures 薄膜和多层结构的x射线衍射研究
Progress in Crystal Growth and Characterization Pub Date : 1989-01-01 DOI: 10.1016/0146-3535(89)90024-5
Armin Segmüller , I.C. Noyan , V.S. Speriosu
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引用次数: 59
Photo-induced organometallic processes in semiconductor surface technology 半导体表面技术中的光致有机金属工艺
Progress in Crystal Growth and Characterization Pub Date : 1989-01-01 DOI: 10.1016/0146-3535(89)90020-8
J. Haigh , K. Durose
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引用次数: 1
International School on Crystal Growth and Crystallographic Assessment of Industrial Materials 国际晶体生长与工业材料晶体学评估学院
Progress in Crystal Growth and Characterization Pub Date : 1989-01-01 DOI: 10.1016/0146-3535(89)90006-3
{"title":"International School on Crystal Growth and Crystallographic Assessment of Industrial Materials","authors":"","doi":"10.1016/0146-3535(89)90006-3","DOIUrl":"https://doi.org/10.1016/0146-3535(89)90006-3","url":null,"abstract":"","PeriodicalId":101046,"journal":{"name":"Progress in Crystal Growth and Characterization","volume":"19 3","pages":"Page 247"},"PeriodicalIF":0.0,"publicationDate":"1989-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1016/0146-3535(89)90006-3","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"72288609","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Bridgman growth of CdxHg1−xTe— A review CdxHg1−xTe - A的Bridgman生长研究进展
Progress in Crystal Growth and Characterization Pub Date : 1989-01-01 DOI: 10.1016/0146-3535(89)90002-6
P. Capper
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引用次数: 23
Characterisation of structures grown by Movpe using x-ray diffraction 用x射线衍射表征Movpe生长的结构
Progress in Crystal Growth and Characterization Pub Date : 1989-01-01 DOI: 10.1016/0146-3535(89)90001-4
Mary Halliwell
{"title":"Characterisation of structures grown by Movpe using x-ray diffraction","authors":"Mary Halliwell","doi":"10.1016/0146-3535(89)90001-4","DOIUrl":"https://doi.org/10.1016/0146-3535(89)90001-4","url":null,"abstract":"<div><p>This paper describes the double and triple axis diffractometers available for characterising heteroepitaxial layer structures in the laboratory environment. The relative merits of the techniques are described.</p><p>To demonstrate the materials information available from the diffractometer data (usually referred to as rocking curves) examples are given of the analysis of layer thickness and lattice parameter values for single heteroepitaxial layers, two layer structures and multiquantum well structures. For layers with a defect density of less than 10<sup>5</sup> per cm<sup>2</sup> detailed analysis of rocking curve data is carried out by comparing experimental results with simulated data.</p><p>X-ray diffraction also offers a non-destructive means of fully characterising the state of relaxation of strained layer systems.</p></div>","PeriodicalId":101046,"journal":{"name":"Progress in Crystal Growth and Characterization","volume":"19 4","pages":"Pages 249-257"},"PeriodicalIF":0.0,"publicationDate":"1989-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1016/0146-3535(89)90001-4","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"91678955","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
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