Philips Journal of Research最新文献_第9页

Frameworks for direct bonding 直接键合框架

Philips Journal of Research Pub Date : 1995-01-01 DOI: 10.1016/0165-5817(95)82001-9

Jan Haisma, Gijsbertus A.C.M. Spierings, Theo M. Michielsen

引用次数: 7

Evaluation of strain sources in bond and etchback silicon-on-insulator 键和蚀刻绝缘体上硅的应变源评价

Philips Journal of Research Pub Date : 1995-01-01 DOI: 10.1016/0165-5817(95)82006-X

R. Egloff, T. Letavic, B. Greenberg, H. Baumgart

引用次数: 3

Compact violet lasers by second-harmonic generation in KTP waveguides KTP波导中二次谐波产生的紧凑紫色激光器

Philips Journal of Research Pub Date : 1995-01-01 DOI: 10.1016/0165-5817(95)98702-Y

M.J. Jongerius

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引用次数: 1

Strained-layer InGaAs(P) quantum well semiconductor lasers and semiconductor laser amplifiers 应变层InGaAs(P)量子阱半导体激光器和半导体激光放大器

Philips Journal of Research Pub Date : 1995-01-01 DOI: 10.1016/0165-5817(95)98697-V

P.J.A. Thijs, L.F. Tiemeijer, J.J.M. Binsma, T. Van Dongen

引用次数: 7

Direct bonding: retrospect and outlook 直接结合:回顾与展望

Philips Journal of Research Pub Date : 1995-01-01 DOI: 10.1016/0165-5817(95)82010-8

Jan Haisma

引用次数: 3

II–VI Semiconductor blue-green laser device characteristics 半导体蓝绿激光器件特性

Philips Journal of Research Pub Date : 1995-01-01 DOI: 10.1016/0165-5817(95)98698-W

R Drenten , J Petruzzello , K Haberern

{"title":"II–VI Semiconductor blue-green laser device characteristics","authors":"R Drenten , J Petruzzello , K Haberern","doi":"10.1016/0165-5817(95)98698-W","DOIUrl":"10.1016/0165-5817(95)98698-W","url":null,"abstract":"<div>Threshold current densities and lasing wavelengths of both ZnSSe/ZnSe/ ZnCdSe and ZnMgSSe/ZnSSe/ZnCdSe lasers under short-pulse (100 ns) operation have been measured as a function of temperature. In the second structure, improved electrical confinement and a lower defect density leads to a better T0 and a higher maximum lasing temperature. In these lasers a room-temperature pulsed threshold current density of 400 A/cm2 has been obtained. Using ZnSe/ZnTe graded electrical contacts, a laser operating voltage of 6.5 V has been realized.Thermal resistances have been measured in ZnMgSSe/ZnSSe/ZnCdSe lasers. A value of 31 <math><mtext>K</mtext><mtext>W</mtext></math> has been obtained in a 20 μm stripe laser of 600 μm length, mounted substrate-up. Both substrate-up and substrate-down mounted lasers meet the thermal continuous-wave lasing condition at room temperature.The relationship between stacking fault density and laser performance has been measured. Defect densities higher than 107 cm−2 significantly increase the lasing threshold.Characteristics of narrow-stripe gain-guided lasers have been measured. Clear changes are seen between short-pulse (100 ns) and longer pulse (800 ns) operation. A simple model that represents thermal index-guiding is used to explain the behavior. The antiguiding parameter is found to be about −1.1.</div>","PeriodicalId":101018,"journal":{"name":"Philips Journal of Research","volume":"49 3","pages":"Pages 225-244"},"PeriodicalIF":0.0,"publicationDate":"1995-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1016/0165-5817(95)98698-W","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"74763184","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 5

Large-vocabulary recognition 词汇量识别

Philips Journal of Research Pub Date : 1995-01-01 DOI: 10.1016/0165-5817(96)81585-3

Christian Dugast

引用次数: 3

Philips Journal of Research Pub Date : 1995-01-01 DOI: 10.1016/0165-5817(95)82003-5

G.A.C.M. Spierings, J. Haisma, T.M. Michelsen

引用次数: 23

Evaluation of wafer bonding and etch back for SOI technology SOI技术的晶圆键合与蚀刻回的评估

Philips Journal of Research Pub Date : 1995-01-01 DOI: 10.1016/0165-5817(95)82005-1

Helmut Baumgart, Theodore J. Letavic, Richard Egloff

{"title":"Evaluation of wafer bonding and etch back for SOI technology","authors":"Helmut Baumgart, Theodore J. Letavic, Richard Egloff","doi":"10.1016/0165-5817(95)82005-1","DOIUrl":"10.1016/0165-5817(95)82005-1","url":null,"abstract":"<div>Film quality and crystalline perfection of SOI layers obtained by bonding and etch back silicon-on-insulator (BESOI) technology have been studied. In particular, the various mechanisms of defect generation that contribute to a degradation of the original bulk Si quality in the superficial Si layer of such SOI structures have been investigated. Utilizing transmission x-ray topography combined with transmission electron microscopy (TEM), the critical processing parameters causing defect generation have been identified and the principal mechanisms of dislocation nucleation have been elucidated. Strain compensated bonded SOI wafers have also been evaluated by non-destructive elastic light scattering and optical beam induced current (OBIC) to obtain topographic defect maps of entire SOI wafers. This analytical technique has the capability to comprehensively characterize surface and subsurface morphological features which result from the bonding and thinning processing steps. A comparison of wafer bonding and etch back technology with different etch stop fabrication techniques is presented. In this review, it is demonstrated that the presence of a boron-doped etch stop layer, with its accompanying lattice contraction and strain compensation, represents a key difference in the observed morphological patterns of bonded SOI wafers.</div>","PeriodicalId":101018,"journal":{"name":"Philips Journal of Research","volume":"49 1","pages":"Pages 91-124"},"PeriodicalIF":0.0,"publicationDate":"1995-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1016/0165-5817(95)82005-1","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"77462572","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 11

Direct bonding in patent literature 专利文献中的直接键合

Philips Journal of Research Pub Date : 1995-01-01 DOI: 10.1016/0165-5817(95)82009-4

Jan Haisma

引用次数: 2