arXiv: Materials Science最新文献_第6页

Efficacy of boron nitride encapsulation against plasma-processing of 2D semiconductor layers 氮化硼封装对二维半导体层等离子体处理的影响

arXiv: Materials Science Pub Date : 2020-11-15 DOI: 10.1116/6.0000874

Pawan Kumar, Kelotchi S. Figueroa, Alexandre C. Foucher, Kiyoung Jo, Natalia Acero, E. Stach, D. Jariwala

{"title":"Efficacy of boron nitride encapsulation against plasma-processing of 2D semiconductor layers","authors":"Pawan Kumar, Kelotchi S. Figueroa, Alexandre C. Foucher, Kiyoung Jo, Natalia Acero, E. Stach, D. Jariwala","doi":"10.1116/6.0000874","DOIUrl":"https://doi.org/10.1116/6.0000874","url":null,"abstract":"Two-dimensional (2D) transition metal dichalcogenides (TMDCs) are the subject of intense investigation for applications in optics, electronics, catalysis, and energy storage. Their optical and electronic properties can be significantly enhanced when encapsulated in an environment that is free of charge disorder. Because hexagonal boron nitride (h-BN) is atomically thin, highly-crystalline, and is a strong insulator, it is one of the most commonly used 2D materials to encapsulate and passivate TMDCs. In this report, we examine how ultrathin h-BN shields an underlying MoS2 TMDC layer from the energetic argon plasmas that are routinely used during semiconductor device fabrication and post-processing. Aberration-corrected Scanning Transmission Electron Microscopy is used to analyze defect formation in both the h-BN and MoS2 layers, and these observations are correlated with Raman and photoluminescence spectroscopy. Our results highlight that h-BN is an effective barrier for short plasma exposures (< 30 secs) but is ineffective for longer exposures, which result in extensive knock-on damage and amorphization in the underlying MoS2.","PeriodicalId":8467,"journal":{"name":"arXiv: Materials Science","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2020-11-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"85776569","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 5

Fabrication of economical signal amplified vibrating sample magnetometer with spiral designed detector 经济型信号放大振动样品磁强计的研制

arXiv: Materials Science Pub Date : 2020-11-14 DOI: 10.1063/5.0030132

Aditya Dash, R. Sarkar, Abel Mathew, P. V. S. I. O. Physics, Astronomy, National Institute of Technology Rourkela, Odisha, India

引用次数: 0

Ab initio screening of metallic MAX ceramics for advanced interconnect applications 用于高级互连应用的金属MAX陶瓷从头开始筛选

arXiv: Materials Science Pub Date : 2020-11-13 DOI: 10.1103/PhysRevMaterials.5.056002

K. Sankaran, K. Moors, Z. Tokei, C. Adelmann, G. Pourtois

引用次数: 11

Large anomalous Hall angle in a topological semimetal candidate TbPtBi 拓扑半金属候选物TbPtBi的大异常霍尔角

arXiv: Materials Science Pub Date : 2020-11-13 DOI: 10.1063/5.0033707

Jie Chen, Hang Li, B. Ding, Hong-wei Zhang, Enke Liu, Wenhong Wang

引用次数: 12

Characterization of room-temperature in-plane magnetization in thin flakes of CrTe2 with a single-spin magnetometer 用单自旋磁力计表征CrTe2薄片的室温平面内磁化

arXiv: Materials Science Pub Date : 2020-11-11 DOI: 10.1103/PHYSREVMATERIALS.5.034008

F. Fabre, A. Finco, A. Purbawati, A. Hadj-Azzem, N. Rougemaille, J. Coraux, I. Philip, V. Jacques

引用次数: 15

Maximization and minimization of interfacial thermal conductance by modulating the mass distribution of the interlayer 通过调节中间层的质量分布来使界面导热系数最大化和最小化

arXiv: Materials Science Pub Date : 2020-11-10 DOI: 10.1103/PhysRevB.103.155305

Lina Yang, Xiao Wan, Dengke Ma, Yi Jiang, Nuo Yang

引用次数: 11

Low-symmetry two-dimensional BNP2 and C2SiS structures with high and anisotropic carrier mobilities 具有高载流子迁移率和各向异性载流子迁移率的低对称二维BNP2和C2SiS结构

arXiv: Materials Science Pub Date : 2020-11-09 DOI: 10.1103/PhysRevMaterials.4.114004

Shixin Song, J. Guan, David Tom'anek

引用次数: 4

Finite-temperature materials modeling from the quantum nuclei to the hot electron regime 从量子核到热电子态的有限温度材料模型

arXiv: Materials Science Pub Date : 2020-11-08 DOI: 10.1103/PHYSREVMATERIALS.5.043802

Nataliya Lopanitsyna, Chiheb Ben Mahmoud, M. Ceriotti

{"title":"Finite-temperature materials modeling from the quantum nuclei to the hot electron regime","authors":"Nataliya Lopanitsyna, Chiheb Ben Mahmoud, M. Ceriotti","doi":"10.1103/PHYSREVMATERIALS.5.043802","DOIUrl":"https://doi.org/10.1103/PHYSREVMATERIALS.5.043802","url":null,"abstract":"Atomistic simulations provide insights into structure-property relations on an atomic size and length scale, that are complementary to the macroscopic observables that can be obtained from experiments. Quantitative predictions, however, are usually hindered by the need to strike a balance between the accuracy of the calculation of the interatomic potential and the modelling of realistic thermodynamic conditions. Machine-learning techniques make it possible to efficiently approximate the outcome of accurate electronic-structure calculations, that can therefore be combined with extensive thermodynamic sampling. We take elemental nickel as a prototypical material, whose alloys have applications from cryogenic temperatures up to close to their melting point, and use it to demonstrate how a combination of machine-learning models of electronic properties and statistical sampling methods makes it possible to compute accurate finite-temperature properties at an affordable cost. We demonstrate the calculation of a broad array of bulk, interfacial and defect properties over a temperature range from 100 to 2500 K, modeling also, when needed, the impact of nuclear quantum fluctuations and electronic entropy. The framework we demonstrate here can be easily generalized to more complex alloys and different classes of materials.","PeriodicalId":8467,"journal":{"name":"arXiv: Materials Science","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2020-11-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"82155854","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 13

Defect states and their electric field-enhanced electron thermal emission in heavily Zr-doped β-Ga2O3 crystals 重掺zr β-Ga2O3晶体的缺陷态及其电场增强电子热发射

arXiv: Materials Science Pub Date : 2020-11-07 DOI: 10.1063/5.0029442

Rujun Sun, Y. Ooi, A. Bhattacharyya, Muad Saleh, S. Krishnamoorthy, K. Lynn, M. Scarpulla

{"title":"Defect states and their electric field-enhanced electron thermal emission in heavily Zr-doped β-Ga2O3 crystals","authors":"Rujun Sun, Y. Ooi, A. Bhattacharyya, Muad Saleh, S. Krishnamoorthy, K. Lynn, M. Scarpulla","doi":"10.1063/5.0029442","DOIUrl":"https://doi.org/10.1063/5.0029442","url":null,"abstract":"Performing deep level transient spectroscopy (DLTS) on Schottky diodes, we investigated defect levels below the conduction band minima (Ec) in Czochralski (CZ) grown unintentionally-doped (UID) and vertical gradient freeze (VGF)-grown Zr-doped beta-Ga2O3 crystals. In UID crystals with an electron concentration of 10^17 cm-3, we observe levels at 0.18 eV and 0.46 eV in addition to the previously reported 0.86 (E2) and 1.03 eV (E3) levels. For 10^18 cm-3 Zr-doped Ga2O3, signatures at 0.30 eV (E15) and 0.71 eV (E16) are present. For the highest Zr doping of 5*10^18 cm-3, we observe only one signature at 0.59 eV. Electric field-enhanced emission rates are demonstrated via increasing the reverse bias during measurement. The 0.86 eV signature in the UID sample displays phonon-assisted tunneling enhanced thermal emission and is consistent with the widely reported E2 (FeGa) defect. The 0.71 eV (E16) signature in the lower-Zr-doped crystal also exhibits phonon-assisted tunneling emission enhancement. Taking into account that the high doping in the Zr-doped diodes also increases the electric field, we propose that the 0.59 eV signature in the highest Zr-doped sample likely corresponds to the 0.71 eV signature in lower-doped samples. Our analysis highlights the importance of testing for and reporting on field-enhanced emission especially the electric field present during DLTS and other characterization experiments on beta-Ga2O3 along with the standard emission energy, cross-section, and lambda-corrected trap density. This is important because of the intended use of beta-Ga2O3 in high-field devices and the many orders of magnitude of possible doping.","PeriodicalId":8467,"journal":{"name":"arXiv: Materials Science","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2020-11-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"76557445","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 8

Thickness-dependent quantum transport of Weyl fermions in ultra-high-quality SrRuO3 films 超高质量SrRuO3薄膜中Weyl费米子的厚度相关量子输运

arXiv: Materials Science Pub Date : 2020-11-07 DOI: 10.1063/5.0036837

Shingo Kaneta-Takada, Y. Wakabayashi, Y. Krockenberger, S. Ohya, Masaaki Tanaka, Y. Taniyasu, Hideki Yamamoto

{"title":"Thickness-dependent quantum transport of Weyl fermions in ultra-high-quality SrRuO3 films","authors":"Shingo Kaneta-Takada, Y. Wakabayashi, Y. Krockenberger, S. Ohya, Masaaki Tanaka, Y. Taniyasu, Hideki Yamamoto","doi":"10.1063/5.0036837","DOIUrl":"https://doi.org/10.1063/5.0036837","url":null,"abstract":"The recent observation of Weyl fermions in the itinerant 4d ferromagnetic perovskite SrRuO3 points to this material being a good platform for exploring novel physics related to a pair of Weyl nodes in epitaxial heterostructures. In this letter, we report the thickness-dependent magnetotransport properties of ultra-high-quality epitaxial SrRuO3 films grown under optimized conditions on SrTiO3 substrates. Signatures of Weyl fermion transport, i.e., unsaturated linear positive magnetoresistance accompanied by a quantum oscillation having a {pi} Berry phase, were observed in films with thicknesses as small as 10 nm. Residual resistivity increased with decreasing film thickness, indicating disorder near the interface between SrRuO3 and the SrTiO3 substrate. Since this disorder affects the magnetic and electrical properties of the films, the Curie temperature decreases and the coercive field increases with decreasing thickness. Thickness-dependent magnetotransport measurements revealed that the threshold residual resistivity ratio (RRR) to observe Weyl fermion transport is 21. These results provide guidelines for realizing quantum transport of Weyl fermions in SrRuO3 near heterointerfaces.","PeriodicalId":8467,"journal":{"name":"arXiv: Materials Science","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2020-11-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"81301234","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 19