体Bi2Se3向Weyl态的拓扑转变:静水压力和掺杂的影响

S. Saha, H. Banerjee, Manoranjan Kumar
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引用次数: 0

摘要

Bi$_2$Se$_3$是一种层状三维(3D)材料,由于存在表面态和块体中0.3 eV的带隙而表现出拓扑绝缘性能。我们从第一性原理的角度研究了静水压力和稀土元素掺杂对该材料本体拓扑形貌的影响。我们的研究表明,在P$>$7.9 GPa的中等压力下,由于能带反转,体电子性能从绝缘状态转变为Weyl半金属状态。这种转变可能与在$P$=7.9 GPa下观察到的从层状材料到3D体系的结构转变有关。总的来说,P态密度在费米能量处具有显著的价值。在Bi$_2$Se$_3$层之间插入少量掺杂的Gd,使体系进入金属反铁磁态,Weyl节点低于费米能量。在Weyl节点上,由于Gd原子上的大磁矩引起的有限局域场,时间反转对称性被打破。然而,用Gd取代Bi会导致反铁磁有序,并增加直接带隙。我们的研究提供了新的方法来调整拓扑转变,特别是在捕捉难以捉摸的Weyl半金属态,在三维拓扑材料。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Topological transitions to Weyl states in bulk Bi2Se3: Effect of hydrostatic pressure and doping
Bi$_2$Se$_3$, a layered three dimensional (3D) material, exhibits topological insulating properties due to presence of surface states and a band gap of 0.3 eV in the bulk. We study the effect hydrostatic pressure $P$ and doping with rare earth elements on the topological aspect of this material in bulk from a first principles perspective. Our study shows that under a moderate pressure of P$>$7.9 GPa, the bulk electronic properties show a transition from an insulating to a Weyl semi-metal state due to band inversion. This transition may be correlated to a structural transition from a layered material to a 3D system observed at $P$=7.9 GPa. At large $P$ density of states have significant value at the Fermi-energy. Intercalating Gd with a small doping fraction between Bi$_2$Se$_3$ layers drives the system to a metallic anti-ferromagnetic state, with Weyl nodes below the Fermi-energy. At the Weyl nodes time reversal symmetry is broken due to finite local field induced by large magnetic moments on Gd atoms. However, substituting Bi with Gd induces anti-ferromagnetic order with an increased direct band gap. Our studies provides novel approaches to tune topological transitions, particularly in capturing the elusive Weyl semimetal states, in 3D topological materials.
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