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Combustion Rate of Powdered Porous Silicon with Limited Space 有限空间内多孔硅粉的燃烧率
IF 0.6 4区 物理与天体物理
Technical Physics Letters Pub Date : 2024-03-14 DOI: 10.1134/s1063785023010297
G. G. Savenkov, A. I. Kozachuk, U. M. Poberezhnaya, V. M. Freiman, G. G. Zegrya
{"title":"Combustion Rate of Powdered Porous Silicon with Limited Space","authors":"G. G. Savenkov, A. I. Kozachuk, U. M. Poberezhnaya, V. M. Freiman, G. G. Zegrya","doi":"10.1134/s1063785023010297","DOIUrl":"https://doi.org/10.1134/s1063785023010297","url":null,"abstract":"<h3 data-test=\"abstract-sub-heading\">Abstract</h3><p>The method of determination combustion rate of powdered porous silicon with limited space is presented. The values of the combustion rates of porous silicon are close to the values of the rates of explosives.</p>","PeriodicalId":784,"journal":{"name":"Technical Physics Letters","volume":null,"pages":null},"PeriodicalIF":0.6,"publicationDate":"2024-03-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140155544","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Temperature Response Features of Ferroelectric Ceramics in Electrocaloric Effect Study 电致发光效应研究中铁电陶瓷的温度响应特性
IF 0.6 4区 物理与天体物理
Technical Physics Letters Pub Date : 2024-03-14 DOI: 10.1134/s1063785023900571
G. Yu. Sotnikova, G. A. Gavrilov, A. A. Kapralov, R. S. Passet, E. P. Smirnova
{"title":"Temperature Response Features of Ferroelectric Ceramics in Electrocaloric Effect Study","authors":"G. Yu. Sotnikova, G. A. Gavrilov, A. A. Kapralov, R. S. Passet, E. P. Smirnova","doi":"10.1134/s1063785023900571","DOIUrl":"https://doi.org/10.1134/s1063785023900571","url":null,"abstract":"<h3 data-test=\"abstract-sub-heading\">Abstract</h3><p>Temperature response of a material to an external electric field is the main method for electrocaloric effect study in ferroelectrics. In this work, for 0.65PbFe<sub>2/3</sub>W<sub>1/3</sub>O<sub>3</sub>–0.35PbTiO<sub>3</sub> solid solution as a model object, it is shown that with an increase in the electric field strength, current fomentation effect can occur. It leads to formation of local regions of increased conductivity in the sample. The associated thermal effect have short characteristic times, due to the small volume of the filament. They are comparable to the times of the electrocaloric response of the material, and can lead to significant errors in the detection of the electrocaloric effect.</p>","PeriodicalId":784,"journal":{"name":"Technical Physics Letters","volume":null,"pages":null},"PeriodicalIF":0.6,"publicationDate":"2024-03-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140886869","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Growth of Thick ε(κ)-Ga2O3 Films by Halide Vapor Phase Epitaxy 通过卤化物气相外延生长厚ε(κ)-Ga2O3 薄膜
IF 0.6 4区 物理与天体物理
Technical Physics Letters Pub Date : 2024-03-14 DOI: 10.1134/s1063785023900583
S. I. Stepanov, A. I. Pechnikov, M. P. Scheglov, A. V. Chikiryaka, V. I. Nikolaev
{"title":"Growth of Thick ε(κ)-Ga2O3 Films by Halide Vapor Phase Epitaxy","authors":"S. I. Stepanov, A. I. Pechnikov, M. P. Scheglov, A. V. Chikiryaka, V. I. Nikolaev","doi":"10.1134/s1063785023900583","DOIUrl":"https://doi.org/10.1134/s1063785023900583","url":null,"abstract":"<h3 data-test=\"abstract-sub-heading\">\u0000<b>Abstract</b>\u0000</h3><p>High crystalline quality epitaxial films of orthorhombic gallium oxide ε(κ)-Ga<sub>2</sub>O<sub>3</sub> with a thickness of more 20 μm have been grown for the first time using halide vapor phase epitaxy. Sapphire wafers with preliminarily deposited GaN layers were used as substrates. The properties of the produced films are studied by X-ray diffraction and electron microscopy. The results are considered an important step towards obtaining thick layers and quasi-bulk ε<b>(</b>κ)-Ga<sub>2</sub>O<sub>3</sub> crystals for practical applications in electronics and sensor technology.</p>","PeriodicalId":784,"journal":{"name":"Technical Physics Letters","volume":null,"pages":null},"PeriodicalIF":0.6,"publicationDate":"2024-03-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140886702","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Low-Voltage InP Heterostyristors for 50–150 ns Current Pulses Generation 用于产生 50-150 ns 电流脉冲的低电压 InP 异质晶体管
IF 0.6 4区 物理与天体物理
Technical Physics Letters Pub Date : 2024-03-14 DOI: 10.1134/s106378502390087x
S. O. Slipchenko, A. A. Podoskin, P. S. Gavrina, Yu. K. Kirichenko, N. V. Shuvalova, N. A. Rudova, V. A. Kapitonov, A. Yu. Leshko, I. V. Shushkanov, V. V. Zolotarev, V. A. Kryuchkov, N. A. Pikhtin, T. A. Bagaev, I. V. Yarotskaya, V. N. Svetogorov, Yu. L. Ryaboshtan, M. A. Ladugin, A. A. Marmalyuk, V. A. Simakov
{"title":"Low-Voltage InP Heterostyristors for 50–150 ns Current Pulses Generation","authors":"S. O. Slipchenko, A. A. Podoskin, P. S. Gavrina, Yu. K. Kirichenko, N. V. Shuvalova, N. A. Rudova, V. A. Kapitonov, A. Yu. Leshko, I. V. Shushkanov, V. V. Zolotarev, V. A. Kryuchkov, N. A. Pikhtin, T. A. Bagaev, I. V. Yarotskaya, V. N. Svetogorov, Yu. L. Ryaboshtan, M. A. Ladugin, A. A. Marmalyuk, V. A. Simakov","doi":"10.1134/s106378502390087x","DOIUrl":"https://doi.org/10.1134/s106378502390087x","url":null,"abstract":"<h3 data-test=\"abstract-sub-heading\">Abstract</h3><p>Current switches based on low-voltage InP heterothyristors with a maximum blocking voltage of 20 V were developed and studied. In current pulse generation mode, the efficient operation of InP heterothyristors with a low-resistance load in the form of a capacitor was demonstrated. It has been shown that the minimum turn-on delay time is about 6 ns at a control current amplitude of 60 mA. The possibility of generating current pulses with a duration of 53–154 ns and amplitudes of 38–130 A was demonstrated when the capacitor values were changed in the range of 56–1000 nF.</p>","PeriodicalId":784,"journal":{"name":"Technical Physics Letters","volume":null,"pages":null},"PeriodicalIF":0.6,"publicationDate":"2024-03-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140886580","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Information Encoding Using Two-Level Generation in a Quantum Dot Laser 利用量子点激光器中的两级生成进行信息编码
IF 0.6 4区 物理与天体物理
Technical Physics Letters Pub Date : 2024-03-14 DOI: 10.1134/s1063785023900832
M. V. Maximov, Yu. M. Shernyakov, N. Yu. Gordeev, A. M. Nadtochiy, A. E. Zhukov
{"title":"Information Encoding Using Two-Level Generation in a Quantum Dot Laser","authors":"M. V. Maximov, Yu. M. Shernyakov, N. Yu. Gordeev, A. M. Nadtochiy, A. E. Zhukov","doi":"10.1134/s1063785023900832","DOIUrl":"https://doi.org/10.1134/s1063785023900832","url":null,"abstract":"<h3 data-test=\"abstract-sub-heading\">Abstract</h3><p>We propose an approach for encoding and transmitting information based on the use of a quantum dot laser, which, depending on the injection current, emits either one of two or simultaneously two spectral components, with different wavelengths. When the laser is modulated by current, each lasing line is detected by an independent photodiode, and thus the information is encoded by both the intensity of each line and its wavelength.</p>","PeriodicalId":784,"journal":{"name":"Technical Physics Letters","volume":null,"pages":null},"PeriodicalIF":0.6,"publicationDate":"2024-03-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140886582","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Focused Ion Beam Milling of Ridge Waveguides of Edge-Emitting Semiconductor Lasers 聚焦离子束铣削边缘发射半导体激光器的脊波导
IF 0.6 4区 物理与天体物理
Technical Physics Letters Pub Date : 2024-03-14 DOI: 10.1134/s1063785023010285
A. S. Payusov, M. I. Mitrofanov, G. O. Kornyshov, A. A. Serin, G. V. Voznyuk, M. M. Kulagina, V. P. Evtikhiev, N. Yu. Gordeev, M. V. Maximov, S. Breuer
{"title":"Focused Ion Beam Milling of Ridge Waveguides of Edge-Emitting Semiconductor Lasers","authors":"A. S. Payusov, M. I. Mitrofanov, G. O. Kornyshov, A. A. Serin, G. V. Voznyuk, M. M. Kulagina, V. P. Evtikhiev, N. Yu. Gordeev, M. V. Maximov, S. Breuer","doi":"10.1134/s1063785023010285","DOIUrl":"https://doi.org/10.1134/s1063785023010285","url":null,"abstract":"<h3 data-test=\"abstract-sub-heading\">Abstract</h3><p>We studied the influence of the focused ion beam milling of ridge waveguides on lasing parameters of edge-emitting lasers, based on a separate confinement double heterostructure. It is shown that there are three degrees of influence, according to the etching depth: modification of the waveguide properties only, a decrease in efficiency without changing the threshold current, and a simultaneous deterioration in the threshold current and efficiency with significant modification of the optical characteristics of the laser.</p>","PeriodicalId":784,"journal":{"name":"Technical Physics Letters","volume":null,"pages":null},"PeriodicalIF":0.6,"publicationDate":"2024-03-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140886761","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Optimization of Vertical Acceptance of a Magnet Mirror 磁镜垂直接收的优化
IF 0.6 4区 物理与天体物理
Technical Physics Letters Pub Date : 2024-03-14 DOI: 10.1134/s1063785023900868
V. D. Sachenko, A. S. Antonov
{"title":"Optimization of Vertical Acceptance of a Magnet Mirror","authors":"V. D. Sachenko, A. S. Antonov","doi":"10.1134/s1063785023900868","DOIUrl":"https://doi.org/10.1134/s1063785023900868","url":null,"abstract":"<h3 data-test=\"abstract-sub-heading\">\u0000<b>Abstract</b>\u0000</h3><p>The mirror type magnetic mass-analyzer axial aberration, caused by ions travelling through the mirror outside the median plane is estimated. A technique for the mass-analyzer acceptance optimization is given.</p>","PeriodicalId":784,"journal":{"name":"Technical Physics Letters","volume":null,"pages":null},"PeriodicalIF":0.6,"publicationDate":"2024-03-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140886672","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Study of Ga2O3 Deposition by MOVPE from Trimethylgallium and Oxygen in a Wide Temperature Range 通过 MOVPE 在宽温度范围内从三甲基镓和氧气中沉积 Ga2O3 的研究
IF 0.6 4区 物理与天体物理
Technical Physics Letters Pub Date : 2024-03-14 DOI: 10.1134/s1063785023900807
V. V. Lundin, S. N. Rodin, A. V. Sakharov, A. F. Tsatsulnikov, A. V. Lobanova, M. V. Bogdanov, R. A. Talalaev, Haiding Sun, Shibing Long
{"title":"Study of Ga2O3 Deposition by MOVPE from Trimethylgallium and Oxygen in a Wide Temperature Range","authors":"V. V. Lundin, S. N. Rodin, A. V. Sakharov, A. F. Tsatsulnikov, A. V. Lobanova, M. V. Bogdanov, R. A. Talalaev, Haiding Sun, Shibing Long","doi":"10.1134/s1063785023900807","DOIUrl":"https://doi.org/10.1134/s1063785023900807","url":null,"abstract":"<h3 data-test=\"abstract-sub-heading\">Abstract</h3><p>Study of Ga<sub>2</sub>O<sub>3</sub> deposition by MOVPE using trimethylgallium and oxygen was performed in a wide temperature range. It was found that for Ga<sub>2</sub>O<sub>3</sub> deposition rate vs temperature dependence is very close to the TMGa pyrolysis in nitrogen. Kinetically-limited range for these processes corresponds to 550–700°C, that is 150°C higher, then for GaN deposition in the same reactor.</p>","PeriodicalId":784,"journal":{"name":"Technical Physics Letters","volume":null,"pages":null},"PeriodicalIF":0.6,"publicationDate":"2024-03-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140886701","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Synthesis of Thin Single-Crystalline α-Cr2O3 Layers on Sapphire Substrates by Ultrasonic-Assisted Chemical Vapor Deposition 通过超声波辅助化学气相沉积在蓝宝石基底上合成薄单晶 α-Cr2O3 层
IF 0.6 4区 物理与天体物理
Technical Physics Letters Pub Date : 2024-03-14 DOI: 10.1134/s1063785023010273
V. I. Nikolaev, R. B. Timashov, A. I. Stepanov, S. I. Stepanov, A. V. Chikiryaka, M. P. Shcheglov, A. Ya. Polyakov
{"title":"Synthesis of Thin Single-Crystalline α-Cr2O3 Layers on Sapphire Substrates by Ultrasonic-Assisted Chemical Vapor Deposition","authors":"V. I. Nikolaev, R. B. Timashov, A. I. Stepanov, S. I. Stepanov, A. V. Chikiryaka, M. P. Shcheglov, A. Ya. Polyakov","doi":"10.1134/s1063785023010273","DOIUrl":"https://doi.org/10.1134/s1063785023010273","url":null,"abstract":"<h3 data-test=\"abstract-sub-heading\">Abstract</h3><p>Single-crystalline α-Cr<sub>2</sub>O<sub>3</sub> layers were synthesized on a sapphire substrate with a basal orientation in a laboratory reactor using ultrasonic-assisted chemical vapor deposition in the temperature range of 700–850°C. The influence of the growth temperature on the structural quality of the layer was studied by X-ray diffraction. At a growth temperature of 800°C, continuous layers with a thickness of about 1 μm were obtained. The layers were transparent in the visible region with a slightly greenish tint and showed some light transmission up to wavelengths of ~350 nm. The full width at half maximum of the rocking curve for reflection 0006 was ~300 arcsec.</p>","PeriodicalId":784,"journal":{"name":"Technical Physics Letters","volume":null,"pages":null},"PeriodicalIF":0.6,"publicationDate":"2024-03-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140886762","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Thermal Decomposition of Polymethylmethacrylate and Its Composite with Fullerene C60 after Ultraviolet Irradiation 紫外线照射后聚甲基丙烯酸甲酯及其与富勒烯 C60 的复合材料的热分解
IF 0.6 4区 物理与天体物理
Technical Physics Letters Pub Date : 2024-03-14 DOI: 10.1134/s1063785023900510
A. O. Pozdnyakov
{"title":"Thermal Decomposition of Polymethylmethacrylate and Its Composite with Fullerene C60 after Ultraviolet Irradiation","authors":"A. O. Pozdnyakov","doi":"10.1134/s1063785023900510","DOIUrl":"https://doi.org/10.1134/s1063785023900510","url":null,"abstract":"<h3 data-test=\"abstract-sub-heading\">Abstract</h3><p>The analysis of the ultraviolet induced transformation of the thermal decomposition spectra of the monomer of the submicrometer layers of polymethylmethacrylate and its composite with fullerene C<sub>60</sub> for different fullerene concentrations and irradiation doses has been carried out. Formation of the new decomposition stages in the spectra has been interpreted by the binding between C<sub>60</sub> and side ester groups of polymethylmethacrylate.</p>","PeriodicalId":784,"journal":{"name":"Technical Physics Letters","volume":null,"pages":null},"PeriodicalIF":0.6,"publicationDate":"2024-03-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140125283","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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