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Concentration Cell Based on Electrogenic Processes in the Root Environment 基于根系环境中电生过程的浓缩池
IF 0.6 4区 物理与天体物理
Technical Physics Letters Pub Date : 2024-03-14 DOI: 10.1134/s1063785023900789
T. E. Kuleshova, G. G. Panova, N. R. Gall, A. S. Galushko
{"title":"Concentration Cell Based on Electrogenic Processes in the Root Environment","authors":"T. E. Kuleshova, G. G. Panova, N. R. Gall, A. S. Galushko","doi":"10.1134/s1063785023900789","DOIUrl":"https://doi.org/10.1134/s1063785023900789","url":null,"abstract":"<h3 data-test=\"abstract-sub-heading\">Abstract</h3><p>The experimental bioelectrochemical current source based on the concentration gradient of charge carriers in the root environment of plants has been created. A potential difference of about 70 mV is observed in the nutrient solution. It is gradually decreasing due to equalization of concentrations. The voltage increases to 200 mV when plant are placed in a cultivation system as the root system develops due to the intensification of diffusion processes. The potential-forming role of nitrate forms of nitrogen is shown on the example of lettuce grown according to the panoponics technology. The separation of electrical charges by the root system during the life of plants can become an alternative source of green energy.</p>","PeriodicalId":784,"journal":{"name":"Technical Physics Letters","volume":"80 1","pages":""},"PeriodicalIF":0.6,"publicationDate":"2024-03-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140886681","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Quantum Noise Source Based on Shot Noise of a Balanced Photodetector with a Tunable Integrated Optical Beam Splitter 基于带有可调谐集成光束分束器的平衡光电探测器射出噪声的量子噪声源
IF 0.6 4区 物理与天体物理
Technical Physics Letters Pub Date : 2024-03-14 DOI: 10.1134/s1063785023900790
V. V. Lebedev, V. M. Petrov, I. V. Ilichev, P. M. Agruzov, A. V. Shamrai
{"title":"Quantum Noise Source Based on Shot Noise of a Balanced Photodetector with a Tunable Integrated Optical Beam Splitter","authors":"V. V. Lebedev, V. M. Petrov, I. V. Ilichev, P. M. Agruzov, A. V. Shamrai","doi":"10.1134/s1063785023900790","DOIUrl":"https://doi.org/10.1134/s1063785023900790","url":null,"abstract":"<h3 data-test=\"abstract-sub-heading\">Abstract</h3><p>A broadband quantum noise source based on detection of shot noise of a balanced photodetector is demonstrated. Precise electro-optical tuning of the balanced photodetector circuit was carried out by an integrated optical beam splitter constructed in the form of the dual output Mach–Zehnder interferometer on a lithium niobate substrate. The classical component of the detected noise related to the relative intensity noise of a laser diode was suppressed by more than 15 dB. At the maximum laser power of 100 mW, the power spectral density of detected shot noise was 12 dB higher than the level of technical noise of the measuring system in the frequency band above 3 GHz.</p>","PeriodicalId":784,"journal":{"name":"Technical Physics Letters","volume":"24 1","pages":""},"PeriodicalIF":0.6,"publicationDate":"2024-03-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140155536","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Two Types of Plasma Channel Structure in High Pressure Pulse Discharge in Cesium 铯高压脉冲放电中的两种等离子体通道结构
IF 0.6 4区 物理与天体物理
Technical Physics Letters Pub Date : 2024-03-14 DOI: 10.1134/s1063785023010091
F. G. Baksht, V. F. Lapshin
{"title":"Two Types of Plasma Channel Structure in High Pressure Pulse Discharge in Cesium","authors":"F. G. Baksht, V. F. Lapshin","doi":"10.1134/s1063785023010091","DOIUrl":"https://doi.org/10.1134/s1063785023010091","url":null,"abstract":"<h3 data-test=\"abstract-sub-heading\">Abstract</h3><p>Simulation of the pulse-periodic high pressure cesium discharge is performed on the basis of equations of radiative gas dynamics. It is shown that in the discharge it is possible to implement two different types of structure of the plasma channel. At the beginning of the current pulse, the plasma discharge channel has a centered structure. At the same time, most of the plasma is concentrated near the discharge axis. The concentration of charged particles decreases along the radius. Then, if the current amplitude is large enough, during the plasma heating process, a transformation from the centered to the shell structure of the channel occurs. In this case, most of the plasma is concentrated on the periphery of the discharge and its concentration increases along the radius from the axis to the walls of the tube. It is shown that the transition from one channel structure to another occurs at a time when the specific heat capacity of the plasma near the axis reaches a deep minimum corresponding to a completely single ionized <i>e</i>–<i>i</i>-plasma.</p>","PeriodicalId":784,"journal":{"name":"Technical Physics Letters","volume":"31 1","pages":""},"PeriodicalIF":0.6,"publicationDate":"2024-03-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140155538","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Nature of the Local Environment of Germany Atoms in Amorphous Films (GeTe)x(Sb2Te3) 非晶薄膜 (GeTe)x(Sb2Te3) 中德国原子局部环境的性质
IF 0.6 4区 物理与天体物理
Technical Physics Letters Pub Date : 2024-03-14 DOI: 10.1134/s1063785023900820
A. V. Marchenko, E. I. Terukov, F. S. Nasredinov, Yu. A. Petrushin, P. P. Seregin
{"title":"Nature of the Local Environment of Germany Atoms in Amorphous Films (GeTe)x(Sb2Te3)","authors":"A. V. Marchenko, E. I. Terukov, F. S. Nasredinov, Yu. A. Petrushin, P. P. Seregin","doi":"10.1134/s1063785023900820","DOIUrl":"https://doi.org/10.1134/s1063785023900820","url":null,"abstract":"<h3 data-test=\"abstract-sub-heading\">Abstract</h3><p>Using Messbauer spectroscopy on <sup>119</sup>Sn impurity atoms, it was demonstrated that in amorphous (GeTe)<sub><i>x</i></sub>(Sb<sub>2</sub>Te<sub>3</sub>) films (where <i>x</i> = 0.5, 1, 2, 3) tin atoms replace atoms of tetravalent germanium, which forms a tetrahedral system of chemical bonds with atoms in its local environment. In crystalline films, tin replaces divalent six-coordinated germanium in positions 4<i>b</i> of the NaCl-type crystal lattice.</p>","PeriodicalId":784,"journal":{"name":"Technical Physics Letters","volume":"78 1","pages":""},"PeriodicalIF":0.6,"publicationDate":"2024-03-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140155539","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Effect of Sodium Atom Adsorption on the Electronic Structure of a Gold Film 钠原子吸附对金薄膜电子结构的影响
IF 0.6 4区 物理与天体物理
Technical Physics Letters Pub Date : 2024-03-14 DOI: 10.1134/s1063785023010121
P. A. Dementev, E. V. Dementeva, M. N. Lapushkin, D. A. Smirnov, S. N. Timoshnev
{"title":"Effect of Sodium Atom Adsorption on the Electronic Structure of a Gold Film","authors":"P. A. Dementev, E. V. Dementeva, M. N. Lapushkin, D. A. Smirnov, S. N. Timoshnev","doi":"10.1134/s1063785023010121","DOIUrl":"https://doi.org/10.1134/s1063785023010121","url":null,"abstract":"<h3 data-test=\"abstract-sub-heading\">Abstract</h3><p>The electronic structure of a gold film deposited on W was studied during the adsorption of sodium atoms. An analysis of the photoemission spectra from the valence band and core levels of Au 4<i>f</i> and Na 2<i>p</i> upon synchrotron excitation in the photon energy range of 80–600 eV showed that Na adsorption leads to the formation of Na<sub><i>x</i></sub>Au<sub><i>y</i></sub> intermetallic compounds of various stoichiometry under the Na monolayer.</p>","PeriodicalId":784,"journal":{"name":"Technical Physics Letters","volume":"85 1","pages":""},"PeriodicalIF":0.6,"publicationDate":"2024-03-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140155541","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Combustion Rate of Powdered Porous Silicon with Limited Space 有限空间内多孔硅粉的燃烧率
IF 0.6 4区 物理与天体物理
Technical Physics Letters Pub Date : 2024-03-14 DOI: 10.1134/s1063785023010297
G. G. Savenkov, A. I. Kozachuk, U. M. Poberezhnaya, V. M. Freiman, G. G. Zegrya
{"title":"Combustion Rate of Powdered Porous Silicon with Limited Space","authors":"G. G. Savenkov, A. I. Kozachuk, U. M. Poberezhnaya, V. M. Freiman, G. G. Zegrya","doi":"10.1134/s1063785023010297","DOIUrl":"https://doi.org/10.1134/s1063785023010297","url":null,"abstract":"<h3 data-test=\"abstract-sub-heading\">Abstract</h3><p>The method of determination combustion rate of powdered porous silicon with limited space is presented. The values of the combustion rates of porous silicon are close to the values of the rates of explosives.</p>","PeriodicalId":784,"journal":{"name":"Technical Physics Letters","volume":"24 1","pages":""},"PeriodicalIF":0.6,"publicationDate":"2024-03-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140155544","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Growth of Thick ε(κ)-Ga2O3 Films by Halide Vapor Phase Epitaxy 通过卤化物气相外延生长厚ε(κ)-Ga2O3 薄膜
IF 0.6 4区 物理与天体物理
Technical Physics Letters Pub Date : 2024-03-14 DOI: 10.1134/s1063785023900583
S. I. Stepanov, A. I. Pechnikov, M. P. Scheglov, A. V. Chikiryaka, V. I. Nikolaev
{"title":"Growth of Thick ε(κ)-Ga2O3 Films by Halide Vapor Phase Epitaxy","authors":"S. I. Stepanov, A. I. Pechnikov, M. P. Scheglov, A. V. Chikiryaka, V. I. Nikolaev","doi":"10.1134/s1063785023900583","DOIUrl":"https://doi.org/10.1134/s1063785023900583","url":null,"abstract":"<h3 data-test=\"abstract-sub-heading\">\u0000<b>Abstract</b>\u0000</h3><p>High crystalline quality epitaxial films of orthorhombic gallium oxide ε(κ)-Ga<sub>2</sub>O<sub>3</sub> with a thickness of more 20 μm have been grown for the first time using halide vapor phase epitaxy. Sapphire wafers with preliminarily deposited GaN layers were used as substrates. The properties of the produced films are studied by X-ray diffraction and electron microscopy. The results are considered an important step towards obtaining thick layers and quasi-bulk ε<b>(</b>κ)-Ga<sub>2</sub>O<sub>3</sub> crystals for practical applications in electronics and sensor technology.</p>","PeriodicalId":784,"journal":{"name":"Technical Physics Letters","volume":"29 1","pages":""},"PeriodicalIF":0.6,"publicationDate":"2024-03-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140886702","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Temperature Response Features of Ferroelectric Ceramics in Electrocaloric Effect Study 电致发光效应研究中铁电陶瓷的温度响应特性
IF 0.6 4区 物理与天体物理
Technical Physics Letters Pub Date : 2024-03-14 DOI: 10.1134/s1063785023900571
G. Yu. Sotnikova, G. A. Gavrilov, A. A. Kapralov, R. S. Passet, E. P. Smirnova
{"title":"Temperature Response Features of Ferroelectric Ceramics in Electrocaloric Effect Study","authors":"G. Yu. Sotnikova, G. A. Gavrilov, A. A. Kapralov, R. S. Passet, E. P. Smirnova","doi":"10.1134/s1063785023900571","DOIUrl":"https://doi.org/10.1134/s1063785023900571","url":null,"abstract":"<h3 data-test=\"abstract-sub-heading\">Abstract</h3><p>Temperature response of a material to an external electric field is the main method for electrocaloric effect study in ferroelectrics. In this work, for 0.65PbFe<sub>2/3</sub>W<sub>1/3</sub>O<sub>3</sub>–0.35PbTiO<sub>3</sub> solid solution as a model object, it is shown that with an increase in the electric field strength, current fomentation effect can occur. It leads to formation of local regions of increased conductivity in the sample. The associated thermal effect have short characteristic times, due to the small volume of the filament. They are comparable to the times of the electrocaloric response of the material, and can lead to significant errors in the detection of the electrocaloric effect.</p>","PeriodicalId":784,"journal":{"name":"Technical Physics Letters","volume":"8 1","pages":""},"PeriodicalIF":0.6,"publicationDate":"2024-03-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140886869","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Low-Voltage InP Heterostyristors for 50–150 ns Current Pulses Generation 用于产生 50-150 ns 电流脉冲的低电压 InP 异质晶体管
IF 0.6 4区 物理与天体物理
Technical Physics Letters Pub Date : 2024-03-14 DOI: 10.1134/s106378502390087x
S. O. Slipchenko, A. A. Podoskin, P. S. Gavrina, Yu. K. Kirichenko, N. V. Shuvalova, N. A. Rudova, V. A. Kapitonov, A. Yu. Leshko, I. V. Shushkanov, V. V. Zolotarev, V. A. Kryuchkov, N. A. Pikhtin, T. A. Bagaev, I. V. Yarotskaya, V. N. Svetogorov, Yu. L. Ryaboshtan, M. A. Ladugin, A. A. Marmalyuk, V. A. Simakov
{"title":"Low-Voltage InP Heterostyristors for 50–150 ns Current Pulses Generation","authors":"S. O. Slipchenko, A. A. Podoskin, P. S. Gavrina, Yu. K. Kirichenko, N. V. Shuvalova, N. A. Rudova, V. A. Kapitonov, A. Yu. Leshko, I. V. Shushkanov, V. V. Zolotarev, V. A. Kryuchkov, N. A. Pikhtin, T. A. Bagaev, I. V. Yarotskaya, V. N. Svetogorov, Yu. L. Ryaboshtan, M. A. Ladugin, A. A. Marmalyuk, V. A. Simakov","doi":"10.1134/s106378502390087x","DOIUrl":"https://doi.org/10.1134/s106378502390087x","url":null,"abstract":"<h3 data-test=\"abstract-sub-heading\">Abstract</h3><p>Current switches based on low-voltage InP heterothyristors with a maximum blocking voltage of 20 V were developed and studied. In current pulse generation mode, the efficient operation of InP heterothyristors with a low-resistance load in the form of a capacitor was demonstrated. It has been shown that the minimum turn-on delay time is about 6 ns at a control current amplitude of 60 mA. The possibility of generating current pulses with a duration of 53–154 ns and amplitudes of 38–130 A was demonstrated when the capacitor values were changed in the range of 56–1000 nF.</p>","PeriodicalId":784,"journal":{"name":"Technical Physics Letters","volume":"148 1","pages":""},"PeriodicalIF":0.6,"publicationDate":"2024-03-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140886580","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Information Encoding Using Two-Level Generation in a Quantum Dot Laser 利用量子点激光器中的两级生成进行信息编码
IF 0.6 4区 物理与天体物理
Technical Physics Letters Pub Date : 2024-03-14 DOI: 10.1134/s1063785023900832
M. V. Maximov, Yu. M. Shernyakov, N. Yu. Gordeev, A. M. Nadtochiy, A. E. Zhukov
{"title":"Information Encoding Using Two-Level Generation in a Quantum Dot Laser","authors":"M. V. Maximov, Yu. M. Shernyakov, N. Yu. Gordeev, A. M. Nadtochiy, A. E. Zhukov","doi":"10.1134/s1063785023900832","DOIUrl":"https://doi.org/10.1134/s1063785023900832","url":null,"abstract":"<h3 data-test=\"abstract-sub-heading\">Abstract</h3><p>We propose an approach for encoding and transmitting information based on the use of a quantum dot laser, which, depending on the injection current, emits either one of two or simultaneously two spectral components, with different wavelengths. When the laser is modulated by current, each lasing line is detected by an independent photodiode, and thus the information is encoded by both the intensity of each line and its wavelength.</p>","PeriodicalId":784,"journal":{"name":"Technical Physics Letters","volume":"28 1","pages":""},"PeriodicalIF":0.6,"publicationDate":"2024-03-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140886582","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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