用于产生 50-150 ns 电流脉冲的低电压 InP 异质晶体管

IF 0.8 4区物理与天体物理 Q4 PHYSICS, APPLIED

Technical Physics Letters Pub Date : 2024-03-14 DOI:10.1134/s106378502390087x

S. O. Slipchenko, A. A. Podoskin, P. S. Gavrina, Yu. K. Kirichenko, N. V. Shuvalova, N. A. Rudova, V. A. Kapitonov, A. Yu. Leshko, I. V. Shushkanov, V. V. Zolotarev, V. A. Kryuchkov, N. A. Pikhtin, T. A. Bagaev, I. V. Yarotskaya, V. N. Svetogorov, Yu. L. Ryaboshtan, M. A. Ladugin, A. A. Marmalyuk, V. A. Simakov

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引用次数: 0

摘要

摘要开发并研究了基于低压 InP 异型晶闸管的电流开关，其最大阻断电压为 20 V。在电流脉冲发生模式下，InP 异型晶闸管与电容器形式的低电阻负载一起高效运行。研究表明，在控制电流振幅为 60 mA 时，最短接通延迟时间约为 6 ns。当电容值在 56-1000 nF 范围内变化时，可以产生持续时间为 53-154 ns、振幅为 38-130 A 的电流脉冲。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

Low-Voltage InP Heterostyristors for 50–150 ns Current Pulses Generation

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Low-Voltage InP Heterostyristors for 50–150 ns Current Pulses Generation

Abstract

Current switches based on low-voltage InP heterothyristors with a maximum blocking voltage of 20 V were developed and studied. In current pulse generation mode, the efficient operation of InP heterothyristors with a low-resistance load in the form of a capacitor was demonstrated. It has been shown that the minimum turn-on delay time is about 6 ns at a control current amplitude of 60 mA. The possibility of generating current pulses with a duration of 53–154 ns and amplitudes of 38–130 A was demonstrated when the capacitor values were changed in the range of 56–1000 nF.

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来源期刊

Technical Physics Letters 物理-物理：应用

CiteScore

1.50

自引率

0.00%

发文量

审稿时长

2-4 weeks

期刊介绍： Technical Physics Letters is a companion journal to Technical Physics and offers rapid publication of developments in theoretical and experimental physics with potential technological applications. Recent emphasis has included many papers on gas lasers and on lasing in semiconductors, as well as many reports on high Tc superconductivity. The excellent coverage of plasma physics seen in the parent journal, Technical Physics, is also present here with quick communication of developments in theoretical and experimental work in all fields with probable technical applications. Topics covered are basic and applied physics; plasma physics; solid state physics; physical electronics; accelerators; microwave electron devices; holography.