{"title":"Improvement in near-infrared absorbance attenuation by using nanometer black silicon composited with gold nanoparticles","authors":"Guanyu Mi, Jian Lv, Longcheng Que, Cheng Tan, Jian Huang, Zhongyuan Liu, Lintong Zhao","doi":"10.1186/s11671-023-03847-z","DOIUrl":"10.1186/s11671-023-03847-z","url":null,"abstract":"<div><p>In order to solve the problem of near-infrared (NIR) absorbance attenuation of silicon, a method of preparing gold nanoparticles (AuNPs) on the micro–nano-structured black silicon (B-Si) is proposed. In this study, the local surface plasmon resonance (LSPR) of AuNPs excited by a light field is used to achieve B-Si materials with broad spectrum and high absorption. The results show that nanometer B-Si composited with 25-nm AuNPs has an average absorption of 98.6% in the spectral range of 400–1100 nm and 97.8% in the spectral range of 1100–2500 nm. Compared with ordinary B-Si, the absorption spectrum is broadened from 400–1100 nm to 400–2500 nm, and the absorption is increased from 90.1 to 97.8% at 1100–2500 nm. It is possible to use the B-Si materials in the field of NIR-enhanced photoelectric detection and micro-optical night vision imaging due to the low cost, high compatibility, and reliability.</p></div>","PeriodicalId":715,"journal":{"name":"Nanoscale Research Letters","volume":"18 1","pages":""},"PeriodicalIF":4.703,"publicationDate":"2023-06-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://link.springer.com/content/pdf/10.1186/s11671-023-03847-z.pdf","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"4129825","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Dongwon Choi, Jeehoon Jeon, Tae-Eon Park, Byeong-Kwon Ju, Ki-Young Lee
{"title":"Schottky barrier height engineering on MoS2 field-effect transistors using a polymer surface modifier on a contact electrode","authors":"Dongwon Choi, Jeehoon Jeon, Tae-Eon Park, Byeong-Kwon Ju, Ki-Young Lee","doi":"10.1186/s11671-023-03855-z","DOIUrl":"10.1186/s11671-023-03855-z","url":null,"abstract":"<div><p>Two-dimensional (2D) materials are highly sought after for their superior semiconducting properties, making them promising candidates for next-generation electronic and optoelectronic devices. Transition-metal dichalcogenides (TMDCs), such as molybdenum disulfide (MoS<sub>2</sub>) and tungsten diselenide (WSe<sub>2</sub>), are promising alternative 2D materials. However, the devices based on these materials experience performance deterioration due to the formation of a Schottky barrier between metal contacts and semiconducting TMDCs. Here, we performed experiments to reduce the Schottky barrier height of MoS<sub>2</sub> field-effect transistors (FETs) by lowering the work function (<i>Ф</i><sub>m</sub> = <i>E</i><sub>vacuum</sub> − <i>E</i><sub>F,metal</sub>) of the contact metal. We chose polyethylenimine (PEI), a polymer containing simple aliphatic amine groups (–NH<sub>2</sub>), as a surface modifier of the Au (<i>Ф</i><sub>Au</sub> = 5.10 eV) contact metal. PEI is a well-known surface modifier that lowers the work function of various conductors such as metals and conducting polymers. Such surface modifiers have thus far been utilized in organic-based devices, including organic light-emitting diodes, organic solar cells, and organic thin-film transistors. In this study, we used the simple PEI coating to tune the work function of the contact electrodes of MoS<sub>2</sub> FETs. The proposed method is rapid, easy to implement under ambient conditions, and effectively reduces the Schottky barrier height. We expect this simple and effective method to be widely used in large-area electronics and optoelectronics due to its numerous advantages.</p></div>","PeriodicalId":715,"journal":{"name":"Nanoscale Research Letters","volume":"18 1","pages":""},"PeriodicalIF":4.703,"publicationDate":"2023-05-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://link.springer.com/content/pdf/10.1186/s11671-023-03855-z.pdf","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"5184892","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Demonstration of MOCVD-grown Ga2O3 power MOSFETs on sapphire with in-situ Si-doped by tetraethyl orthosilicate (TEOS)","authors":"Sao Thien Ngo, Chan-Hung Lu, Fu-Gow Tarntair, Sheng-Ti Chung, Tian-Li Wu, Ray-Hua Horng","doi":"10.1186/s11671-023-03858-w","DOIUrl":"10.1186/s11671-023-03858-w","url":null,"abstract":"<div><p>In this work, we demonstrated Ga<sub>2</sub>O<sub>3</sub>-based power MOSFETs grown on c-plane sapphire substrates using in-situ TEOS doping for the first time. The <i>β</i>-Ga<sub>2</sub>O<sub>3</sub>:Si epitaxial layers were formed by the metalorganic chemical vapor deposition (MOCVD) with a TEOS as a dopant source. The depletion-mode Ga<sub>2</sub>O<sub>3</sub> power MOSFETs are fabricated and characterized, showing the increase of the current, transconductance, and breakdown voltage at 150 °C. In addition, the sample with the TEOS flow rate of 20 sccm exhibited a breakdown voltage of more than 400 V at RT and 150 °C, indicating that the in-situ Si doping by TEOS in MOCVD is a promising method for Ga<sub>2</sub>O<sub>3</sub> power MOSFETs.</p></div>","PeriodicalId":715,"journal":{"name":"Nanoscale Research Letters","volume":"18 1","pages":""},"PeriodicalIF":4.703,"publicationDate":"2023-05-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://link.springer.com/content/pdf/10.1186/s11671-023-03858-w.pdf","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"5158251","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Nanoscratch-induced formation of metallic micro/nanostructures with resin masks","authors":"Mingyong Xin, Qihui Feng, Changbao Xu, Licong Cui, Jie Zhu, Yinkai Gan, Bingjun Yu","doi":"10.1186/s11671-023-03857-x","DOIUrl":"10.1186/s11671-023-03857-x","url":null,"abstract":"<div><p>Metallic micro/nanostructures present a wide range of applications due to the small size and superior performances. In order to obtain high-performance devices, it is of great importance to develop new methods for preparing metallic micro/nanostructures with high quality, low cost, and precise position. It is found that metallic micro/nanostructures can be obtained by scratch-induced directional deposition of metals on silicon surface, where the mask plays a key role in the process. This study is focused on the preparation of keto-aldehyde resin masks and their effects on the formation of scratch-induced gold (Au) micro/nanostructures. It is also found that the keto-aldehyde resin with a certain thickness can act as a satisfactory mask for high-quality Au deposition, and the scratches produced under lower normal load and less scratching cycles are more conducive to the formation of compact Au structures. According to the proposed method, two-dimensional Au structures can be prepared on the designed scratching traces, providing a feasible path for fabricating high-quality metal-based sensors.</p></div>","PeriodicalId":715,"journal":{"name":"Nanoscale Research Letters","volume":"18 1","pages":""},"PeriodicalIF":4.703,"publicationDate":"2023-05-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://link.springer.com/content/pdf/10.1186/s11671-023-03857-x.pdf","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"5057447","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Structural and optical analyses for InGaN-based red micro-LED","authors":"Fu-He Hsiao, Wen-Chien Miao, Yu-Heng Hong, Hsin Chiang, I-Hung Ho, Kai-Bo Liang, Daisuke Iida, Chun-Liang Lin, Hyeyoung Ahn, Kazuhiro Ohkawa, Chiao-Yun Chang, Hao-Chung Kuo","doi":"10.1186/s11671-023-03853-1","DOIUrl":"10.1186/s11671-023-03853-1","url":null,"abstract":"<div><p>This study presents a comprehensive analysis of the structural and optical properties of an InGaN-based red micro-LED with a high density of V-shaped pits, offering insights for enhancing emission efficiency. The presence of V-shaped pits is considered advantageous in reducing non-radiative recombination. Furthermore, to systematically investigate the properties of localized states, we conducted temperature-dependent photoluminescence (PL). The results of PL measurements indicate that deep localization in the red double quantum wells can limit carrier escape and improve radiation efficiency. Through a detailed analysis of these results, we extensively investigated the direct impact of epitaxial growth on the efficiency of InGaN red micro-LEDs, thereby laying the foundation for improving efficiency in InGaN-based red micro-LEDs.</p></div>","PeriodicalId":715,"journal":{"name":"Nanoscale Research Letters","volume":"18 1","pages":""},"PeriodicalIF":4.703,"publicationDate":"2023-05-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://link.springer.com/content/pdf/10.1186/s11671-023-03853-1.pdf","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"4979887","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Reda M. Abdelhameed, Mohamed S. Hasanin, Amr H. Hashem
{"title":"Carboxymethyl cellulose/sulfur-functionalized Ti-based MOF composite: synthesis, characterization, antimicrobial, antiviral and anticancer potentiality","authors":"Reda M. Abdelhameed, Mohamed S. Hasanin, Amr H. Hashem","doi":"10.1186/s11671-023-03852-2","DOIUrl":"10.1186/s11671-023-03852-2","url":null,"abstract":"<div><p>Microbial resistance is the first morbidity and mortality cause for patients as usually a secondary infection. Additionally, the MOF is a promising material that shows a nice activity in this field. However, these materials need a good formulation to enhance biocompatibility and sustainability. Cellulose and its derivatives are well as filers for this gap. In this presented work, a novel green active system based on carboxymethyl cellulose and Ti-MOF (MIL-125-NH<sub>2</sub>@CMC) modified with thiophene (Thio@MIL-125-NH<sub>2</sub>@CMC) was prepared by a post-synthetic modification (PSM) route based. FTIR, SEM and PXRD were utilized to characterize nanocomposites. In addition, transmission electron microscopy (TEM) was used to corroborate the nanocomposites' particle size and diffraction pattern as well as the DLS affirmed the size as 50 and 35 nm for MIL-125-NH<sub>2</sub>@CMC and Thio@MIL-125-NH<sub>2</sub>@CMC, respectively. The formulation of the nanocomposites was validated by physicochemical characterization techniques, while morphological analysis confirmed the nanoform of the prepared composites. The antimicrobial, antiviral and antitumor properties of MIL-125-NH<sub>2</sub>@CMC and Thio@MIL-125-NH<sub>2</sub>@CMC were assessed. Antimicrobial testing revealed that Thio@MIL-125-NH<sub>2</sub>@CMC possesses greater antimicrobial activity than MIL-125-NH<sub>2</sub>@CMC. Additionally, Thio@MIL-125-NH<sub>2</sub>@CMC demonstrated promising antifungal activity against <i>C. albicans</i> and <i>A. niger</i> where MICs were 31.25 and 0.97 µg/mL, respectively. Also, Thio@MIL-125-NH<sub>2</sub>@CMC exhibited antibacterial activity against <i>E. coli</i> and <i>S. aureus</i> where MICs were 1000 and 250 µg/mL, respectively. In addition, the results demonstrated that Thio@MIL-125-NH<sub>2</sub>@CMC displayed promising antiviral activity against both HSV1 and COX B4, with antiviral activities of 68.89% and 39.60%, respectively. Furthermore, Thio@MIL-125-NH<sub>2</sub>@CMC exhibited potential anticancer activity against MCF7 and PC3 cancerous cell lines, where IC<sub>50</sub> was 93.16 and 88.45%, respectively. In conclusion, carboxymethyl cellulose/sulfur-functionalized Ti-based MOF composite was successfully synthesized which had antimicrobial, antiviral and anticancer activities.</p></div>","PeriodicalId":715,"journal":{"name":"Nanoscale Research Letters","volume":"18 1","pages":""},"PeriodicalIF":4.703,"publicationDate":"2023-05-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://link.springer.com/content/pdf/10.1186/s11671-023-03852-2.pdf","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"4870095","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Ahmad Nawaz, Hafeez ur Rehman, Muhammad Usman, Abdul Wakeel, Muhammad Shafiq Shahid, Sardar Alam, Muhammad Sanaullah, Muhammad Atiq, Muhammad Farooq
{"title":"Nanobiotechnology in crop stress management: an overview of novel applications","authors":"Ahmad Nawaz, Hafeez ur Rehman, Muhammad Usman, Abdul Wakeel, Muhammad Shafiq Shahid, Sardar Alam, Muhammad Sanaullah, Muhammad Atiq, Muhammad Farooq","doi":"10.1186/s11671-023-03845-1","DOIUrl":"10.1186/s11671-023-03845-1","url":null,"abstract":"<div><p>Agricultural crops are subject to a variety of biotic and abiotic stresses that adversely affect growth and reduce the yield of crop plantss. Traditional crop stress management approaches are not capable of fulfilling the food demand of the human population which is projected to reach 10 billion by 2050. Nanobiotechnology is the application of nanotechnology in biological fields and has emerged as a sustainable approach to enhancing agricultural productivity by alleviating various plant stresses. This article reviews innovations in nanobiotechnology and its role in promoting plant growth and enhancing plant resistance/tolerance against biotic and abiotic stresses and the underlying mechanisms. Nanoparticles, synthesized through various approaches (physical, chemical and biological), induce plant resistance against these stresses by strengthening the physical barriers, improving plant photosynthesis and activating plant defense mechanisms. The nanoparticles can also upregulate the expression of stress-related genes by increasing anti-stress compounds and activating the expression of defense-related genes. The unique physico-chemical characteristics of nanoparticles enhance biochemical activity and effectiveness to cause diverse impacts on plants. Molecular mechanisms of nanobiotechnology-induced tolerance to abiotic and biotic stresses have also been highlighted. Further research is needed on efficient synthesis methods, optimization of nanoparticle dosages, application techniques and integration with other technologies, and a better understanding of their fate in agricultural systems.\u0000</p></div>","PeriodicalId":715,"journal":{"name":"Nanoscale Research Letters","volume":"18 1","pages":""},"PeriodicalIF":4.703,"publicationDate":"2023-05-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://link.springer.com/content/pdf/10.1186/s11671-023-03845-1.pdf","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"4620890","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Tunable MEMS-based metamaterial nanograting coupler for C-band optical communication application","authors":"Kunye Li, Yu-Sheng Lin","doi":"10.1186/s11671-023-03843-3","DOIUrl":"10.1186/s11671-023-03843-3","url":null,"abstract":"<div><p>A tunable metamaterial nanograting coupler (MNC) is presented that is composed of a one-dimensional surface nanograting coupler with a bottom reflector and the metamaterial atop. For a single nanograting coupler, by introducing a reflector and optimizing nanograting parameters, the spatial coupling efficiency exceeds 97% around near-infrared wavelength of 1.43 μm. The metamaterial can be tuned by using micro-electro-mechanical system (MEMS) technique. The relative height or lateral offset between metamaterial and coupling nanograting can be controlled, that the light-emitting efficiency can be separated into two different directions. In addition, the coupling efficiency is as high as 91% at the optical C-band communication window. Therefore, the proposed MEMS-based MNC not only has the possibility of coupling optical fibers with high-density integrated optoelectronic chips, but also has potential application prospects in light path switching, variable optical attenuation, and optical switch.</p></div>","PeriodicalId":715,"journal":{"name":"Nanoscale Research Letters","volume":"18 1","pages":""},"PeriodicalIF":4.703,"publicationDate":"2023-04-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://link.springer.com/content/pdf/10.1186/s11671-023-03843-3.pdf","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"4956182","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Guiqiang Yang, Wen Liu, Yidi Bao, Xiaoling Chen, Chunxue Ji, Bo Wei, Fuhua Yang, Xiaodong Wang
{"title":"Performance optimization of In(Ga)As quantum dot intermediate band solar cells","authors":"Guiqiang Yang, Wen Liu, Yidi Bao, Xiaoling Chen, Chunxue Ji, Bo Wei, Fuhua Yang, Xiaodong Wang","doi":"10.1186/s11671-023-03839-z","DOIUrl":"10.1186/s11671-023-03839-z","url":null,"abstract":"<div><p>Quantum dot intermediate band solar cell (QD-IBSC) has high efficiency theoretically. It can absorb photons with energy lower than the bandgap of the semiconductor through the half-filled intermediate band, extending the absorption spectrum of the cell. However, issues in the IBSC, such as the strain around multi-stacking QDs, low thermal excitation energy, and short carrier lifetime, lead to its low conversion efficiency. In recent years, many efforts have been made from different aspects. In this paper, we focus on In(Ga)As QD-IBSC, list the experimental technologies used to improve the performance of the cell and review the recent research progress. By analyzing the effects of different technologies on conversion efficiency, the development direction of the In(Ga)As QD-IBSC in the future is proposed.</p></div>","PeriodicalId":715,"journal":{"name":"Nanoscale Research Letters","volume":"18 1","pages":""},"PeriodicalIF":4.703,"publicationDate":"2023-04-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://link.springer.com/content/pdf/10.1186/s11671-023-03839-z.pdf","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"4780419","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Syeda Irsa Mazhar, Attarad Ali, Trevor B. Tilly, Muhammad Hassaan Khan, Chang-Yu Wu
{"title":"Efficient adsorption of aromatic and aliphatic hydrocarbons by electrospun hydrophobic PTFE-NiO composite nanofiber filter mats","authors":"Syeda Irsa Mazhar, Attarad Ali, Trevor B. Tilly, Muhammad Hassaan Khan, Chang-Yu Wu","doi":"10.1186/s11671-023-03834-4","DOIUrl":"10.1186/s11671-023-03834-4","url":null,"abstract":"<div><p>Aromatic and aliphatic hydrocarbons (AAHs) are comprised of a variety of gaseous chemicals that may affect human and environmental health. To remove AAHs from air, polytetrafluoroethylene-nickel oxide (PTFE-NiO) composite nanofiber filter mats (NFMs) were synthesized and characterized for their ability to effectively adsorb AAHs. The NiO-nanoparticle-doped mats were fabricated by green electrospinning of PTFE and polyvinyl alcohol (PVA) mixtures added with nickel (II) nitrate hexahydrate in the spinning solution followed by surface heat treatment. FE-SEM FTIR, Raman spectroscopy, sessile drop and Jar methods were applied as characterization techniques. The diameter of the electrospun nanofibers without NiO dopant ranged from 0.34 ± 21.61 to 0.23 ± 10.12 µm, whereas a reduction in diameter of NiO-doped nanofibers was obtained, ranging between pristine to 0.25 ± 24.12 µm and 0.12 ± 85.75 µm with heat treatment. 6% (by weight) NiO-doped PTFE composite NFMs exhibited a high water-contact angle of 120 ± 2.20 degrees; the high hydrophobicity value aided self-cleansing property of NFMs for practical applications. UV adsorption capability for heat-treated PTFE-NiO NFMs was evaluated for three AAHs, and the results showed that 6 wt% NiO adsorbed 1.41, 0.67, and 0.73 µg/mg of toluene, formaldehyde and acetone, respectively. These findings reveal the potential applicability of the prepared filter mats for capturing various AAHs from polluted air.\u0000</p></div>","PeriodicalId":715,"journal":{"name":"Nanoscale Research Letters","volume":"18 1","pages":""},"PeriodicalIF":4.703,"publicationDate":"2023-04-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://link.springer.com/content/pdf/10.1186/s11671-023-03834-4.pdf","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"4776107","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}