原位正硅酸四乙酯(TEOS)硅掺杂蓝宝石表面mocvd生长Ga2O3功率mosfet的研究

IF 4.703 3区材料科学

Nanoscale Research Letters Pub Date : 2023-05-30 DOI:10.1186/s11671-023-03858-w

Sao Thien Ngo, Chan-Hung Lu, Fu-Gow Tarntair, Sheng-Ti Chung, Tian-Li Wu, Ray-Hua Horng

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引用次数: 1

摘要

在这项工作中，我们首次展示了使用原位TEOS掺杂在c平面蓝宝石衬底上生长的ga2o3基功率mosfet。采用金属有机化学气相沉积(MOCVD)技术，以TEOS为掺杂源制备了β-Ga2O3:Si外延层。制备了耗尽模式Ga2O3功率mosfet，并对其进行了表征，发现在150℃下，电流、跨导和击穿电压均有所增加。此外，TEOS流量为20 sccm的样品在RT和150℃下击穿电压大于400 V，表明在MOCVD中TEOS原位掺杂Si是制备Ga2O3功率mosfet的一种很有前途的方法。

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Demonstration of MOCVD-grown Ga2O3 power MOSFETs on sapphire with in-situ Si-doped by tetraethyl orthosilicate (TEOS)

In this work, we demonstrated Ga₂O₃-based power MOSFETs grown on c-plane sapphire substrates using in-situ TEOS doping for the first time. The β-Ga₂O₃:Si epitaxial layers were formed by the metalorganic chemical vapor deposition (MOCVD) with a TEOS as a dopant source. The depletion-mode Ga₂O₃ power MOSFETs are fabricated and characterized, showing the increase of the current, transconductance, and breakdown voltage at 150 °C. In addition, the sample with the TEOS flow rate of 20 sccm exhibited a breakdown voltage of more than 400 V at RT and 150 °C, indicating that the in-situ Si doping by TEOS in MOCVD is a promising method for Ga₂O₃ power MOSFETs.

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来源期刊

Nanoscale Research Letters NANOSCIENCE & NANOTECHNOLOGY-MATERIALS SCIENCE, MULTIDISCIPLINARY

CiteScore

15.00

自引率

0.00%

发文量

110

审稿时长

2.5 months

期刊介绍： Nanoscale Research Letters (NRL) provides an interdisciplinary forum for communication of scientific and technological advances in the creation and use of objects at the nanometer scale. NRL is the first nanotechnology journal from a major publisher to be published with Open Access.