Nano Convergence最新文献

{"title":"First Demonstration of Hysteresis-Free IGZO/SnO-Based Complementary Circuits and SRAM with Long-Term Reliability Using SU-8 Passivation","authors":"Changwoo Han,&nbsp;Hyeonjung Park,&nbsp;Yejoo Choi,&nbsp;Myeongjae Choi,&nbsp;Jaehyuk Lim,&nbsp;Huiseong Shin,&nbsp;Seungjoon Moon,&nbsp;Changhwan Shin","doi":"10.1186/s40580-025-00517-x","DOIUrl":"10.1186/s40580-025-00517-x","url":null,"abstract":"<div><p>Complementary logic and memory circuits based on n-type indium gallium zinc oxide (IGZO) and p-type tin monoxide (SnO) thin-film transistors (TFTs) were demonstrated with low-voltage, hysteresis-free operation. Optimization of IGZO channel thickness precisely tuned the inverter switching point to near V_DD/2, achieving a high voltage gain of 146.6 V/V at V_DD = 3 V and ultra-low static power consumption in the nanowatt range. SU-8 passivation effectively suppressed bias-stress-induced degradation in both IGZO and SnO TFTs, enhancing long-term stability and reducing device variation. Using these optimized devices, a 3-stage ring oscillator exhibited stable oscillations, and 6T-SRAM cells achieved tunable static noise margins by adjusting transistor strength ratios. This work represents one of the first implementations of IGZO/SnO-based  6T-SRAM and demonstrates the potential of oxide semiconductor complementary circuits for low-power and reliable system integration, with promising future applicability to non-volatile memory and on-device artificial intelligence hardware.</p><h3>Graphical abstract</h3><div><figure><div><div><picture><source><img></source></picture></div></div></figure></div></div>","PeriodicalId":712,"journal":{"name":"Nano Convergence","volume":"12 1","pages":""},"PeriodicalIF":11.0,"publicationDate":"2025-10-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://nanoconvergencejournal.springeropen.com/counter/pdf/10.1186/s40580-025-00517-x","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145406292","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Programmable MRI contrast switching for spatiotemporal mapping of thrombus maturation via enzyme-directed nanoprobe reconfiguration","authors":"Chi Lin,&nbsp;Fang-Yu Hsu,&nbsp;Chun-Ming Shih,&nbsp;Tsai-Mu Cheng,&nbsp;Alexander T. H. Wu,&nbsp;Chia-Hsiung Cheng,&nbsp;Hsin-Ying Lu,&nbsp;Chun-Che Shih,&nbsp;Fwu-Long Mi","doi":"10.1186/s40580-025-00518-w","DOIUrl":"10.1186/s40580-025-00518-w","url":null,"abstract":"<div><p>Spatiotemporal mapping of thrombus remodeling remains a major unmet challenge due to the lack of diagnostic tools capable of dynamically converting local biochemical activity into quantitative imaging signals. Current clinical methods lack sensitivity and specificity for accurate thrombus staging. Here, we present a programmable MRI nanoplatform enabling enzyme-gated dual-mode contrast switching for dynamic thrombus profiling and guided thrombolysis. The nanoprobe achieves broad-spectrum thrombus targeting by recognizing two complementary biomarkers uniquely expressed at distinct thrombus maturation stages, and integrates gelatin-guided structural reconfiguration with magnetic nanoparticle clustering to modulate MRI contrast. Gelatin modulates the nanoprobe structure, restricting water proton accessibility and promoting internal densification, thereby synchronously suppressing T1-weighted signals and amplifying T2-weighted contrast. Upon activation by thrombus-associated MMP-2/9, the nanoprobe disassembles, reversing its nano-architecture and signal behavior. This smart signal transformation quantitatively correlates with MMP activity, thrombus age, and collagen content, generating stage-dependent T1/T2 ratios. The nanoprobe also enables enzyme-triggered fibrinolytic release, achieving site-specific thrombolysis with minimal hemorrhagic risk. This materials-based strategy translates dynamic microenvironmental remodeling into high-resolution MRI outputs, establishing a programmable framework for precision imaging and therapy. These programmable imaging outputs support data-driven diagnostics, enable clinical treatment stratification, and offer a standardized reference for modeling enzyme-rich pathological environments.</p><h3>Graphical Abstract</h3><div><figure><div><div><picture><source><img></source></picture></div></div></figure></div></div>","PeriodicalId":712,"journal":{"name":"Nano Convergence","volume":"12 1","pages":""},"PeriodicalIF":11.0,"publicationDate":"2025-10-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://nanoconvergencejournal.springeropen.com/counter/pdf/10.1186/s40580-025-00518-w","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145406178","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Interfacial engineering with chemical bath deposition for high-performance HgTe quantum dot-based short-wave infrared photodetectors","authors":"Haoran Chen,&nbsp;Yuwei Guo,&nbsp;Yulia V. Kuznetsova,&nbsp;Kseniia A. Sergeeva,&nbsp;Arsenii S. Portniagin,&nbsp;Xie He,&nbsp;Hui Yu,&nbsp;Andrey L. Rogach,&nbsp;Ni Zhao","doi":"10.1186/s40580-025-00519-9","DOIUrl":"10.1186/s40580-025-00519-9","url":null,"abstract":"<div><p>Colloidal quantum dot-based short-wave infrared (SWIR) photodetectors are often limited by surface traps and high noise levels at room temperature. In this work, we present a low-temperature chemical bath deposition (CBD) strategy to grow a heterojunction passivation layer on HgTe quantum dot (QD) photoactive layers, enabling high-performance SWIR photodetection at room temperature. The CBD process achieves interfacial modification through a dual mechanism: sulfur ions penetrate the HgTe QD surface to form an Hg-S bonded interfacial region while simultaneously reacting with Cd²⁺ in the bath to create a CdS electron-accepting layer, resulting in a compositionally graded CdS/Hg-S/HgTe structure. The resulting interfacial improvement, coupled with energy level modification, facilitates carrier separation and passivates surface defects, thus simultaneously enhancing the responsivity and reducing noise current of photodetectors. As a result, the phototransistor based on the CdS/HgTe photoactive layer demonstrates a high room-temperature specific detectivity of 4.43 × 10¹¹ Jones at 1550 nm and maintains detectivity around 10¹⁰ Jones at extended wavelengths up to 2500 nm. These results underscore the importance of interfacial engineering in colloidal QDs-based photodetectors and demonstrate CBD as a scalable, silicon-compatible passivation approach for achieving cryogen-free SWIR optoelectronic devices.</p><h3>Graphical abstract</h3><div><figure><div><div><picture><source><img></source></picture></div></div></figure></div></div>","PeriodicalId":712,"journal":{"name":"Nano Convergence","volume":"12 1","pages":""},"PeriodicalIF":11.0,"publicationDate":"2025-10-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://nanoconvergencejournal.springeropen.com/counter/pdf/10.1186/s40580-025-00519-9","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145399437","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Improved piezocatalytic performance of BaTiO₃ nanowires via in situ pore structure regulation","authors":"Yiren Liu,&nbsp;Qinghu Guo,&nbsp;Zhonghua Yao,&nbsp;Hanxing Liu,&nbsp;Shujun Zhang,&nbsp;Hua Hao","doi":"10.1186/s40580-025-00514-0","DOIUrl":"10.1186/s40580-025-00514-0","url":null,"abstract":"<div>\u0000 \u0000 <p>In conventional catalytic reactions, the specific surface area of the catalyst plays a pivotal role in determining the reaction rate. Similarly, in piezocatalysis, the modulation of pore structure is equally critical. In this study, BaTiO₃ nanowires were synthesized via a two-step solvothermal process, wherein the pore architecture of the catalyst was engineered by adjusting the reaction solvent and other parameters. This structural optimization not only facilitated the transport of reactants and enhanced the bulk resistivity, but also induced an internal electric field within the catalyst. Consequently, the screening charges generated by the piezoelectric effect were more effectively localized on the sample surface to engage in redox reactions, thereby yielding a highly active piezocatalyst. The optimized catalyst achieved a degradation efficiency of 98% for Rhodamine B (RhB) solution within 10 min, accompanied by a reaction rate constant as high as 0.38 min⁻¹. By integrating experimental observations with finite element simulations, the contribution of the porous structure to the enhanced piezocatalytic activity was elucidated, offering new insights for the future development and application of piezocatalytic materials.</p>\u0000 <span>AbstractSection</span>\u0000 Graphical abstract\u0000 <div><figure><div><div><picture><source><img></source></picture></div></div></figure></div>\u0000 \u0000 </div>","PeriodicalId":712,"journal":{"name":"Nano Convergence","volume":"12 1","pages":""},"PeriodicalIF":11.0,"publicationDate":"2025-10-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://nanoconvergencejournal.springeropen.com/counter/pdf/10.1186/s40580-025-00514-0","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145385706","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Precious-metal-free rGO/NiMnB nanoarchitectonics with covalent metal support interaction for efficient and durable alkaline water splitting","authors":"Shalmali R. Burse,&nbsp;Shamraiz Hussain Talib,&nbsp;Harshitha B. Tyagaraj,&nbsp;S. K. Gagankumar,&nbsp;Swapnil R. Patil,&nbsp;Ebrahim Al Hajri,&nbsp;Jinho Bae,&nbsp;Jungmin Kim,&nbsp;Nilesh R. Chodankar,&nbsp;Yun Suk Huh,&nbsp;Young Kyu Han","doi":"10.1186/s40580-025-00516-y","DOIUrl":"10.1186/s40580-025-00516-y","url":null,"abstract":"<div><p>To accelerate the widespread adoption of green hydrogen energy, developing cost-effective, sustainable electrocatalysts that can replace precious metals is essential. This study introduces a bifunctional electrocatalyst for overall water splitting, comprising 2D reduced graphene oxide (rGO) integrated with NiMnB nanosheets into a tailored nanohybrid (rGO/Ni_1.5Mn_0.5B). The integration enhances both crystal growth and catalytic activity by promoting rapid nucleation and efficient electron transport. Synthesized via a one-pot hydrothermal process, the rGO/Ni_1.5Mn_0.5B electrode exhibits a crystalline 2D nanosheet-like morphology, ensuring high electroactive surface area and strong contact with electrolyte. In 1.0 M KOH, the catalyst achieves an overpotential of 159 mV for hydrogen evolution reaction (HER) and 170 mV for oxygen evolution reaction (OER), outperforming RuO₂ at 10 mA/cm². DFT calculations reveal that the strong orbital coupling between Ni, Mn, and the rGO matrix enhances metal-support interactions, boosting catalytic performance. The symmetric cell demonstrates overall water splitting cell voltage of 1.49 V at 10 mA/cm² with excellent durability over 20 h under industrial conditions. Additionally, the long-term durability performance was evaluated using time series modelling with a long short-term memory algorithm. With superior electronic, structural, and electrochemical properties, rGO/Ni_1.5Mn_0.5B offers a scalable solution for next-generation industrial water splitting and sustainable hydrogen production.</p><h3>Graphical abstract</h3><div><figure><div><div><picture><source><img></source></picture></div></div></figure></div><p> A bifunctional, precious-metal-free rGO/NiMnB nanohybrid exhibits enhanced alkaline water splitting performance via covalent metal-support interactions. Synergistic orbital coupling at the Fermi level promotes efficient electron transfer, leading to low overpotentials for HER and OER. DFT analysis supports the observed catalytic activity and stability under industrial conditions.</p></div>","PeriodicalId":712,"journal":{"name":"Nano Convergence","volume":"12 1","pages":""},"PeriodicalIF":11.0,"publicationDate":"2025-10-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://nanoconvergencejournal.springeropen.com/counter/pdf/10.1186/s40580-025-00516-y","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145385704","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"From pixels to camera: scaling superconducting nanowire single-photon detectors for imaging at the quantum-limit","authors":"Jun Gao,&nbsp;Jin Chang,&nbsp;Bruno Lopez-Rodriguez,&nbsp;Iman Esmaeil Zadeh,&nbsp;Val Zwiller,&nbsp;Ali W. Elshaari","doi":"10.1186/s40580-025-00515-z","DOIUrl":"10.1186/s40580-025-00515-z","url":null,"abstract":"<div>\u0000 \u0000 <p>Superconducting nanowire single-photon detectors (SNSPDs) have emerged as essential devices that push the boundaries of photon detection with unprecedented sensitivity, ultrahigh timing precision, and broad spectral response. Recent advancements in materials engineering, superconducting electronics integration, and cryogenic system design are enabling the evolution of SNSPDs from single-pixel detectors toward scalable arrays and large-format single-photon time tagging cameras. This perspective article surveys the rapidly evolving technological landscape underpinning this transition, focusing on innovative superconducting materials, advanced multiplexed read-out schemes, and emerging cryo-compatible electronics. We highlight how these developments are set to profoundly impact diverse applications, including quantum communication networks, deep-tissue biomedical imaging, single-molecule spectroscopy, remote sensing with unprecedented resolution, and the detection of elusive dark matter signals. By critically discussing both current challenges and promising solutions, we aim to articulate a clear, coherent vision for the next generation of SNSPD-based quantum imaging systems.</p>\u0000 <span>AbstractSection</span>\u0000 Graphical abstract\u0000 <div><figure><div><div><picture><source><img></source></picture></div></div></figure></div>\u0000 \u0000 </div>","PeriodicalId":712,"journal":{"name":"Nano Convergence","volume":"12 1","pages":""},"PeriodicalIF":11.0,"publicationDate":"2025-10-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://nanoconvergencejournal.springeropen.com/counter/pdf/10.1186/s40580-025-00515-z","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145352900","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Unraveling ionic switching dynamics in high-k dielectric double-gate transistors via low-frequency noise spectroscopy","authors":"Soi Jeong,&nbsp;Chang-Hyeon Han,&nbsp;Been Kwak,&nbsp;Ryun-Han Koo,&nbsp;Youngchan Cho,&nbsp;Jangsaeng Kim,&nbsp;Jong-Ho Lee,&nbsp;Daewoong Kwon,&nbsp;Wonjun Shin","doi":"10.1186/s40580-025-00512-2","DOIUrl":"10.1186/s40580-025-00512-2","url":null,"abstract":"<p>High-k dielectric materials such as HfO₂ have garnered significant attention for their potential applications in advanced electronic devices due to their superior dielectric properties. Particularly, oxygen vacancies within these materials can be strategically utilized to implement memory functionalities. However, the precise analysis of the electrical, chemical, and electrochemical characteristics related to oxygen vacancies remains challenging. In this study, we fabricated a double-gate thin-film transistor (TFT) structure employing HfO₂ as the gate dielectric for both top and bottom gates, with the oxygen vacancy concentration intentionally modulated by introducing a TiO₂ interlayer at the bottom gate stack. This TiO₂ layer effectively increases the oxygen vacancy content within the bottom gate dielectric, facilitating oxygen vacancy migration-based memory operation primarily through the bottom gate. The resulting asymmetry between the top and bottom gates was systematically analyzed using low-frequency noise (LFN) characterization, elucidating for the first time the distinct impacts of oxygen vacancy modulation on device electrical behavior and operational mechanisms. This comprehensive LFN analysis provides critical insights into the fundamental dynamics of defect-mediated memory operation, highlighting the importance of dielectric engineering in optimizing next-generation oxide-based electronic devices.</p><p>This study unravels ionic switching dynamics in double-gate HfO2–IGZO TFTs, where a TiO2 scavenging layer modulates oxygen vacancies to enable memory operation. Low-frequency noise spectroscopy reveals a ionic-dependent transition between distinct noise mechanisms, providing fundamental insights into vacancy-driven dynamics and guiding the optimization of high-k dielectric transistors for next-generation computing.</p>","PeriodicalId":712,"journal":{"name":"Nano Convergence","volume":"12 1","pages":""},"PeriodicalIF":11.0,"publicationDate":"2025-10-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://nanoconvergencejournal.springeropen.com/counter/pdf/10.1186/s40580-025-00512-2","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145210244","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Dynamic pass bias control for temperature-resilient neural networks using vertical NAND flash memory","authors":"Sung-Ho Park,&nbsp;Jiseong Im,&nbsp;Jonghyun Ko,&nbsp;Joon Hwang,&nbsp;Yeongheon Yang,&nbsp;Jong-Won Back,&nbsp;Ryun-Han Koo,&nbsp;In-Seok Lee,&nbsp;Dongbeen Shin,&nbsp;Mingyun Oh,&nbsp;Gyuweon Jung,&nbsp;Jong-Ho Lee","doi":"10.1186/s40580-025-00513-1","DOIUrl":"10.1186/s40580-025-00513-1","url":null,"abstract":"<div><p>Vertical NAND (V-NAND) flash memory has emerged as a promising candidate for neuromorphic computing platforms due to its high density, scalability, and reliability. However, synaptic weights stored in V-NAND cells are highly sensitive to ambient temperature variations, resulting in significant conductance shifts that degrade the inference accuracy of neural networks. To address this challenge, we propose a dynamic pass bias (DPB) control scheme that compensates for temperature-induced weight variations without requiring memory reprogramming or additional hardware overhead. By adaptively adjusting the pass bias applied to unselected word-lines during read operations, the DPB scheme effectively stabilizes the differential conductance representation of weights under thermal fluctuations. In addition, we introduce a temperature-adaptive biasing circuit composed of a single-crystalline silicon MOSFET and V-NAND strings. Exploiting their opposing temperature-dependent resistance characteristics, this passive circuit naturally reduces the pass bias as temperature rises, enabling real-time analog compensation without explicit sensing or digital control logic. Experimental measurements on commercial V-NAND devices fabricated with over 100 WL layers reveal substantial shifts in bit-line currents with increasing temperature. Simulation results based on CIFAR-10 image classification using a VGG-11 network demonstrate that the DPB scheme significantly mitigates accuracy degradation across a wide temperature range. Notably, adjusting pass bias at lower temperatures improves classification accuracy by up to 10.5%p compared to conventional fixed-bias operations. These results highlight the effectiveness of dynamic pass bias control—both digitally and circuit-assisted—as a lightweight and scalable solution for enhancing the temperature resilience of V-NAND flash memory-based neural networks.</p><h3>Graphical abstract</h3><div><figure><div><div><picture><source><img></source></picture></div></div></figure></div></div>","PeriodicalId":712,"journal":{"name":"Nano Convergence","volume":"12 1","pages":""},"PeriodicalIF":11.0,"publicationDate":"2025-09-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://nanoconvergencejournal.springeropen.com/counter/pdf/10.1186/s40580-025-00513-1","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145197951","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Emergence of relaxor-like ferroelectric nature in nanograined Pb(Zr0.95Ti0.05)O3 ceramic thick films for energy storage applications","authors":"Nirmal Prashanth Maria Joseph Raj,&nbsp;Hyunseok Song,&nbsp;Satyabrata Lenka,&nbsp;Geon-Tae Hwang,&nbsp;Dae-Yong Jeong,&nbsp;Mahesh Peddigari,&nbsp;Jungho Ryu","doi":"10.1186/s40580-025-00511-3","DOIUrl":"10.1186/s40580-025-00511-3","url":null,"abstract":"<div><p>In this study, we demonstrated the nanostructuring of the ferroelectric (FE) phase of Pb(Zr_0.95Ti_0.05)O₃ (PZT-95/5) into a thick film with relaxor<b>-</b>like FE (RFE) characteristics. This transformation results in exceptionally high dielectric breakdown strength (<i>E</i>_<i>DBS</i>) and energy storage density properties. The high kinetic energy from aerosol deposition transformed the bulk PZT-95/5 from a normal FE system into a RFE system by forming a nanostructured grain with nanodomains within a nonpolar matrix. This nanostructure enables easy domain switching, resulting in low remanent polarization. The resulting high density of grain boundaries due to nanograin formation and the nonpolar structure act as barriers to charge flow, resulting in high breakdown strength. Collectively, these effects resulted in a significantly enhanced <i>E</i>_<i>DBS</i> of 5.6 MV/cm and a maximum polarization of 80 µC/cm². These properties, evidenced by slim hysteresis loops, demonstrate that the prepared PZT-95/5 thick film is a superior capacitive material with a high recoverable energy density of 116 J/cm³. Furthermore, the film exhibited reliable fatigue endurance up to 10⁷ cycles and thermal stability from room temperature to 140^°C. The film also exhibited a peak power density of 35 MW/cm³ under a practical electric field of 0.45 MV/cm (180 V) and a fast discharging speed (<i>τ</i>_0.9) of 230 ns. These properties, in addition to the minimal fabrication steps and superior capacitive characteristics, demonstrate the strong potential of the prepared PZT-95/5 thick film for use in next-generation energy storage devices.</p></div>","PeriodicalId":712,"journal":{"name":"Nano Convergence","volume":"12 1","pages":""},"PeriodicalIF":11.0,"publicationDate":"2025-09-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://www.ncbi.nlm.nih.gov/pmc/articles/PMC12480236/pdf/","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145190662","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Efficient methods of isolation and purification of extracellular vesicles","authors":"Taewoon Kim,&nbsp;Jong Wook Hong,&nbsp;Luke P. Lee","doi":"10.1186/s40580-025-00509-x","DOIUrl":"10.1186/s40580-025-00509-x","url":null,"abstract":"<div><p>Living cells produce nanometer scales of extracellular vesicles (EVs) that have attracted considerable interest due to their transformative effects on diagnostics and therapies for cancer and other diseases. While significant advancements have been made in grasping the physical and chemical foundations of separation techniques for EVs, challenges must be overcome to ensure effective EV purification for diverse life sciences and clinical applications. This review highlights the most significant developments in efficient isolation and purification methods for EVs in transformative medicine. We examine the basic structure of exosomes and how to obtain specimens containing exosomes and EVs from various body fluids. We investigate the principles of physical, chemical, and biological isolation methods of EVs. We systematically evaluate different designs of microfluidics-based EV purification methods. We provide a comprehensive overview of the applications of exosomes in the life sciences and medicine. The precise engineering of EV isolation and purification generates a high yield and purity, offering practical solutions for translational medicine.</p><h3>Graphical Abstract</h3>\u0000<div><figure><div><div><picture><source><img></source></picture></div></div></figure></div></div>","PeriodicalId":712,"journal":{"name":"Nano Convergence","volume":"12 1","pages":""},"PeriodicalIF":11.0,"publicationDate":"2025-09-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://nanoconvergencejournal.springeropen.com/counter/pdf/10.1186/s40580-025-00509-x","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145136118","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}