2D Materials最新文献_第9页

Optical signatures of charge- and energy transfer in TMDC/TMDC and TMDC/perovskite heterostructures TMDC/TMDC 和 TMDC/perovskite 异质结构中电荷和能量转移的光学特征

IF 5.5 3区材料科学

2D Materials Pub Date : 2024-03-14 DOI: 10.1088/2053-1583/ad341c

Sarah C Gillespie, Marco van der Laan, D. Poonia, Sourav Maiti, Sachin Kinge, L. Siebbeles, Peter Schall

{"title":"Optical signatures of charge- and energy transfer in TMDC/TMDC and TMDC/perovskite heterostructures","authors":"Sarah C Gillespie, Marco van der Laan, D. Poonia, Sourav Maiti, Sachin Kinge, L. Siebbeles, Peter Schall","doi":"10.1088/2053-1583/ad341c","DOIUrl":"https://doi.org/10.1088/2053-1583/ad341c","url":null,"abstract":"\u0000 Heterostructures based on two-dimensional transition metal dichalcogenides (TMDC) are highly intriguing materials because of the layers' pronounced excitonic properties and their nontrivial contributions to the heterostructure (HS). These heterostructures exhibit unique properties that are not observed in either of the constituent components in isolation. Interlayer excitons, which are electron-hole pairs separated across the heterostructures, play a central role in determining these heterostructure properties and are of interest both fundamentally and for device applications. In recent years, a major focus has been on understanding and designing heterostructures composed of two or more TMDC materials. Less attention has been paid to heterostructures composed of one TMDC layer and a layer of perovskite material. A central challenge in the understanding of HS properties is that basic measurements such as optical spectroscopic analysis can be misinterpreted due to the complexity of the charge transfer dynamics. Addressing these aspects, this review presents an overview of the most common and insightful optical spectroscopic techniques used to study TMDC/TMDC and TMDC/halide perovskite HSs. Emphasis is placed on the interpretation of these measurements in terms of charge transfer and the formation of interlayer excitons. Recent advances have started to uncover highly interesting phenomena, and with improved understanding these heterostructures offer great potential for device applications such as photodetectors and miniaturized optics.","PeriodicalId":6812,"journal":{"name":"2D Materials","volume":null,"pages":null},"PeriodicalIF":5.5,"publicationDate":"2024-03-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140241503","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Atomic vs. sub-atomic layer deposition: impact of growth rate on the optical and structural properties of MoS2 and WS2 原子层沉积与亚原子层沉积：生长速度对 MoS2 和 WS2 光学和结构特性的影响

IF 5.5 3区材料科学

2D Materials Pub Date : 2024-03-07 DOI: 10.1088/2053-1583/ad3134

C. Tessarek, T. Grieb, Florian F. Krause, Christian Petersen, A. Karg, Alexander Hinz, Niels Osterloh, Christian Habben, Stephan Figge, Jon-Olaf Krisponeit, Thomas Schmidt, Jens Falta, A. Rosenauer, Martin Eickhoff

{"title":"Atomic vs. sub-atomic layer deposition: impact of growth rate on the optical and structural properties of MoS2 and WS2","authors":"C. Tessarek, T. Grieb, Florian F. Krause, Christian Petersen, A. Karg, Alexander Hinz, Niels Osterloh, Christian Habben, Stephan Figge, Jon-Olaf Krisponeit, Thomas Schmidt, Jens Falta, A. Rosenauer, Martin Eickhoff","doi":"10.1088/2053-1583/ad3134","DOIUrl":"https://doi.org/10.1088/2053-1583/ad3134","url":null,"abstract":"\u0000 MoS2 and WS2 mono- and multilayers were grown on SiO2 /Si substrates. Growth by atomic layer deposition at fast growth rates is compared to sub-atomic layer deposition, which is a slow growth rate process with only partial precursor surface coverage per cycle. A Raman spectroscopic analysis of the intensity and frequency difference of the modes reveals different stages of growth from partial to full surface layer coverage followed by layer-by-layer formation. The initial layer thickness and structural quality strongly depends on the growth rate and monolayers only form using sub-atomic layer deposition. Optical activity is demonstrated by photoluminescence characterisation which shows typical excitonic emission from MoS2 and WS2 monolayers. A chemical analysis confirming the stoichiometry of MoS2 is performed by X-ray photoelectron spectroscopy. The surface morphology of layers grown with different growth rates is studied by atomic force microscopy. Plan-view transmission electron microscopy analysis of MoS2 directly grown on freestanding graphene reveals the local crystalline quality of the layers, in agreement with Raman and photoluminescence results.","PeriodicalId":6812,"journal":{"name":"2D Materials","volume":null,"pages":null},"PeriodicalIF":5.5,"publicationDate":"2024-03-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140258714","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Short excitonic lifetimes of MoSe2 monolayers grown by molecular beam epitaxy on the hexagonal boron nitride 通过分子束外延在六方氮化硼上生长的 MoSe2 单层的短激子寿命

IF 5.5 3区材料科学

2D Materials Pub Date : 2024-03-07 DOI: 10.1088/2053-1583/ad3135

K. Oreszczuk, W. Pacuski, A. Rodek, Mateusz Raczyński, T. Kazimierczuk, K. Nogajewski, T. Taniguchi, Kenji Watanabe, M. Potemski, P. Kossacki

引用次数: 0

Electronic structures and quantum capacitance of twisted mixed-dimensional van der Waals heterostructures of graphene/C2H based on tight-binding model 基于紧密结合模型的石墨烯/C2H 扭曲混维范德华异质结构的电子结构和量子电容

IF 5.5 3区材料科学

2D Materials Pub Date : 2024-03-06 DOI: 10.1088/2053-1583/ad2caa

Baojuan Xin, Boyan Li, Wen Yang, Luyan Li, Hong Dong, Yahui Cheng, Hui Liu, Wei-Hua Wang, Feng Lu

{"title":"Electronic structures and quantum capacitance of twisted mixed-dimensional van der Waals heterostructures of graphene/C2H based on tight-binding model","authors":"Baojuan Xin, Boyan Li, Wen Yang, Luyan Li, Hong Dong, Yahui Cheng, Hui Liu, Wei-Hua Wang, Feng Lu","doi":"10.1088/2053-1583/ad2caa","DOIUrl":"https://doi.org/10.1088/2053-1583/ad2caa","url":null,"abstract":"Constructing twisted mixed dimensional graphene-based van der Waals heterostructure (vdWH) is an effective strategy to manipulate the electronic structures and improve the quantum capacitance (<italic toggle=\"yes\">C</italic>\u0000q) of graphene. In this work, mixed dimensional vdWH of graphene/C2H has been proposed owing to similar Dirac semimetal character of one-dimensional C2H with that of graphene. Meanwhile, the influence of twisting angle (<italic toggle=\"yes\">θ</italic>) and interlayer interaction strength on the electronic structures and the <italic toggle=\"yes\">C</italic>\u0000q of the MD vdWH are systemically explored based on tight binding model. With the fitted hopping integral parameters, it is found that the linear dispersion of the graphene is basically preserved but the bandwidth is decreased with modulating twisting angle and interlayer interaction, and the <italic toggle=\"yes\">C</italic>\u0000q of mixed dimensional vdWH is improved 5–19 times compared with graphene at zero bias. Moreover, the compressed strain could enhance the <italic toggle=\"yes\">C</italic>\u0000q of mixed dimensional vdWH to 74.57 <italic toggle=\"yes\">μ</italic>F cm−2 at zero bias and broaden the low working voltage window of mixed-dimensional vdWH with considerable <italic toggle=\"yes\">C</italic>\u0000q. Our results provide suitable tight-binding model parameters and theoretical guidance for exploring the twisted MD vdWH of graphene/C2H and offer an effective strategy to modulate the electronic structures and the <italic toggle=\"yes\">C</italic>\u0000q of graphene through constructing the MD vdWH.","PeriodicalId":6812,"journal":{"name":"2D Materials","volume":null,"pages":null},"PeriodicalIF":5.5,"publicationDate":"2024-03-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140313532","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Spatially-resolved UV-C emission in epitaxial monolayer boron nitride 外延单层氮化硼中的空间分辨紫外-C 发射

IF 5.5 3区材料科学

2D Materials Pub Date : 2024-03-02 DOI: 10.1088/2053-1583/ad2f45

Adrien Rousseau, Juliette Plo, P. Valvin, Tin S. Cheng, J. Bradford, T. James, James Wrigley, Christopher J. Mellor, P. Beton, Sergei V. Novikov, V. Jacques, Bernard Gil, Guillaume Cassabois

引用次数: 0

A review on transfer methods of two-dimensional materials 二维材料转移方法综述

IF 5.5 3区材料科学

2D Materials Pub Date : 2024-03-02 DOI: 10.1088/2053-1583/ad2f43

I. Cheliotis, I. Zergioti

引用次数: 0

Probing electron-phonon coupling in magnetic van der Waals material NiPS3: a non-magnetic site-dilution study 探测磁性范德华材料 NiPS3 中的电子-声子耦合：非磁性位点稀释研究

IF 5.5 3区材料科学

2D Materials Pub Date : 2024-03-02 DOI: 10.1088/2053-1583/ad2f44

Nashra Pistawala, Ankit Kumar, D. Negi, Dibyata Rout, Luminita Harnagea, Surajit Saha, Surjeet Singh

{"title":"Probing electron-phonon coupling in magnetic van der Waals material NiPS3: a non-magnetic site-dilution study","authors":"Nashra Pistawala, Ankit Kumar, D. Negi, Dibyata Rout, Luminita Harnagea, Surajit Saha, Surjeet Singh","doi":"10.1088/2053-1583/ad2f44","DOIUrl":"https://doi.org/10.1088/2053-1583/ad2f44","url":null,"abstract":"\u0000 NiPS3 is a Van der Waals antiferromagnet which has been shown to exhibit spin-phonon and spin-charge coupling in the antiferromagnetically ordered state below TN = 155 K. It is also a rare Ni-based negative charge-transfer-type (NCT) insulator with Ni valence in a linear superposition state ψ= αd8+ βd9L_+ γ d10L_2, where L_ is the ligand hole. Here, we study high-quality single-crystals of Ni1-xZnxPS3 (0 < x < 0.2) using temperature-dependent specific heat and Raman spectroscopy probes. We show that in pristine NiPS3, the phonon mode at 176 cm-1 (P2), associated with the vibrations of Ni, exhibits a distinct Fano asymmetry. The Fano resonance is found to be particularly pronounced in the paramagnetic phase above TN, which was further confirmed by temperature dependent Raman data on the Zn-doped crystals. In the Zn-doped crystals, while the magnetism weakens following the mean-field prediction for site-dilution in a honeycomb lattice, the Fano coupling 1/q strengthens, increasing monotonically with increasing Zn-doping. The X-ray photoemission spectra suggest an increase in the weight of the d9 and d10 components in the Zn-doped crystals. These observations indicate the presence of strong electron-phonon coupling in Ni1-xZnxPS3, in addition to the spin-phonon, and spin-charge coupling previously reported.","PeriodicalId":6812,"journal":{"name":"2D Materials","volume":null,"pages":null},"PeriodicalIF":5.5,"publicationDate":"2024-03-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140082250","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

High-performance broadband SnS photodetector based on photoconductive-bolometric coupling effect 基于光电导-浮力耦合效应的高性能宽带 SnS 光电探测器

IF 5.5 3区材料科学

2D Materials Pub Date : 2024-03-01 DOI: 10.1088/2053-1583/ad2c11

Bo Zhang, Yunjie Liu, Bing Hu, Fuhai Guo, Mingcong Zhang, Siqi Li, Weizhuo Yu, Lanzhong Hao

{"title":"High-performance broadband SnS photodetector based on photoconductive-bolometric coupling effect","authors":"Bo Zhang, Yunjie Liu, Bing Hu, Fuhai Guo, Mingcong Zhang, Siqi Li, Weizhuo Yu, Lanzhong Hao","doi":"10.1088/2053-1583/ad2c11","DOIUrl":"https://doi.org/10.1088/2053-1583/ad2c11","url":null,"abstract":"Due to its large absorption coefficient and high carrier mobility, SnS exhibits strong promise in the area of optoelectronic devices. Nevertheless, the fabrication of large-area, high-quality films for SnS photodetectors (PDs) with superior photoresponse remains a formidable task, seriously limiting its further practical application. In the present study, we report a superior-performance broadband PD founded on the epitaxial SnS film. Large-area uniform SnS films were grown epitaxially on (100)-oriented KBr using magnetron sputtering technique, further exfoliated, and transferred in a wafer size to fabricated two-ends PD devices. Benefitting from high crystallization and unique photoconductive-bolometric coupling effect, the two modes of operation exhibit a wide range of spectral responses from the visible to near-infrared wavelength (405–1920 nm). Particularly noteworthy is the SnS device fabricated, which demonstrates an impressive responsivity of 95.5 A W−1 and a detectivity of 7.8 × 1011 Jones, outperforming other devices by 1–2 orders of magnitude. In addition, SnS PD shows excellent environmental durability. This work provides a robust approach to develop high-performance broadband SnS PDs, while simultaneously offering deep insight into the light–matter interactions.","PeriodicalId":6812,"journal":{"name":"2D Materials","volume":null,"pages":null},"PeriodicalIF":5.5,"publicationDate":"2024-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140313510","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Flux-pinning mediated superconducting diode effect in NbSe2/CrGeTe3 heterostructure NbSe2/CrGeTe3 异质结构中由磁通钉介导的超导二极管效应

IF 5.5 3区材料科学

2D Materials Pub Date : 2024-02-22 DOI: 10.1088/2053-1583/ad27e7

A Mehrnejat, M Ciomaga Hatnean, M C Rosamond, N Banerjee, G Balakrishnan, S E Savel’ev, F K Dejene

{"title":"Flux-pinning mediated superconducting diode effect in NbSe2/CrGeTe3 heterostructure","authors":"A Mehrnejat, M Ciomaga Hatnean, M C Rosamond, N Banerjee, G Balakrishnan, S E Savel’ev, F K Dejene","doi":"10.1088/2053-1583/ad27e7","DOIUrl":"https://doi.org/10.1088/2053-1583/ad27e7","url":null,"abstract":"In ferromagnet/superconductor bilayer systems, dipolar fields from the ferromagnet can create asymmetric energy barriers for the formation and dynamics of vortices through flux pinning. Conversely, the flux emanating from vortices can pin the domain walls of the ferromagnet, thereby creating asymmetric critical currents. Here, we report the observation of a superconducting diode effect (SDE) in a NbSe2/CrGeTe3 van der Waals heterostructure in which the magnetic domains of CrGeTe3 control the Abrikosov vortex dynamics in NbSe2. In addition to extrinsic vortex pinning mechanisms at the edges of NbSe2, flux-pinning-induced bulk pinning of vortices can alter the critical current. This asymmetry can thus be explained by considering the combined effect of this bulk pinning mechanism along with the vortex tilting induced by the Lorentz force from the transport current in the NbSe2/CrGeTe3 heterostructure. We also provide evidence of critical current modulation by flux pinning depending on the history of the field setting procedure. Our results suggest a method of controlling the efficiency of the SDE in magnetically coupled van der Waals superconductors, where dipolar fields generated by the magnetic layer can be used to modulate the dynamics of the superconducting vortices in the superconductors.","PeriodicalId":6812,"journal":{"name":"2D Materials","volume":null,"pages":null},"PeriodicalIF":5.5,"publicationDate":"2024-02-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140010520","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Klein tunneling degradation and enhanced Fabry-Pérot interference in graphene/h-BN moiré-superlattice devices 石墨烯/h-BN 摩尔超晶格器件中的克莱因隧道衰减和增强的法布里-佩罗干涉

IF 5.5 3区材料科学

2D Materials Pub Date : 2024-02-21 DOI: 10.1088/2053-1583/ad27e8

Viet-Anh Tran, Viet-Hung Nguyen, Jean-Christophe Charlier

{"title":"Klein tunneling degradation and enhanced Fabry-Pérot interference in graphene/h-BN moiré-superlattice devices","authors":"Viet-Anh Tran, Viet-Hung Nguyen, Jean-Christophe Charlier","doi":"10.1088/2053-1583/ad27e8","DOIUrl":"https://doi.org/10.1088/2053-1583/ad27e8","url":null,"abstract":"Hexagonal boron-nitride (<italic toggle=\"yes\">h</italic>-BN) provides an ideal substrate for supporting graphene devices to achieve fascinating transport properties, such as Klein tunneling, electron optics and other novel quantum transport phenomena. However, depositing graphene on <italic toggle=\"yes\">h</italic>-BN creates moiré superlattices, whose electronic properties can be significantly manipulated by controlling the lattice alignment between layers. In this work, the effects of these moiré structures on the transport properties of graphene are investigated using atomistic simulations. At large misalignment angles (leading to small moiré cells), the transport properties (most remarkably, Klein tunneling) of pristine graphene devices are conserved. On the other hand, in the nearly aligned cases, the moiré interaction induces stronger effects, significantly affecting electron transport in graphene. In particular, Klein tunneling is significantly degraded. In contrast, strong Fabry-Pérot interference (accordingly, strong quantum confinement) effects and non-linear I-V characteristics are observed. P-N interface smoothness engineering is also considered, suggesting as a potential way to improve these transport features in graphene/<italic toggle=\"yes\">h</italic>-BN devices.","PeriodicalId":6812,"journal":{"name":"2D Materials","volume":null,"pages":null},"PeriodicalIF":5.5,"publicationDate":"2024-02-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140010512","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0