2D Materials最新文献

{"title":"Solution-processed graphene films for electrochemical monitoring of extracellular nitric oxide released by breast cancer cells","authors":"Derrick Butler, Chinmay S. Sankhe, Pouya Soltan Khamsi, Esther W. Gomez, Aida Ebrahimi","doi":"10.1088/2053-1583/ad1251","DOIUrl":"https://doi.org/10.1088/2053-1583/ad1251","url":null,"abstract":"\u0000 Nitric oxide plays an important role in cardiovascular function, immune response, and intercellular signaling. However, due to its short lifetime, real-time detection of nitric oxide is challenging. Herein, an electrochemical sensor based on fibronectin-modified, solution-processed graphene ink for nitric oxide detection is developed using a facile fabrication method involving spin-coating and hot-plate annealing. The sensor is first electrochemically characterized with a nitric oxide donor, spermine NONOate, exhibiting a dynamic range of 10 – 1000 μM. The fibronectin-functionalized graphene supports the attachment and growth of MDA-MB-231 breast cancer cells, as confirmed by optical microscopy. Extracellular nitric oxide production is stimulated using the amino acid L-arginine. Nitric oxide production results in morphological changes to the adhered cells, which are reversible upon the addition of the nitric oxide synthase antagonist Nω-nitro-L-arginine methyl ester (L-NAME). The production of nitric oxide is also confirmed using real-time amperometric measurements with the fibronectin-functionalized graphene sensors. While this work focuses on nitric oxide detection, this potentially scalable platform could be extended to other cell types with envisioned applications including the high-throughput evaluation of therapeutics and biocompatible coatings.","PeriodicalId":6812,"journal":{"name":"2D Materials","volume":"40 5","pages":""},"PeriodicalIF":5.5,"publicationDate":"2023-12-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"138600801","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Two-dimensional MSi2N4 (M = Ge, Sn, and Pb) monolayers: promising new materials for optoelectronic applications","authors":"Mirali Jahangirzadeh Varjovi, Soheil Ershadrad, Biplab Sanyal, Sergio Tosoni","doi":"10.1088/2053-1583/ad0f2b","DOIUrl":"https://doi.org/10.1088/2053-1583/ad0f2b","url":null,"abstract":"The recent growth of two-dimensional (2D) layered crystals of MoSi<sub>2</sub>N<sub>4</sub> and WSi<sub>2</sub>N<sub>4</sub> has sparked significant interest due to their outstanding properties and potential applications. This development has paved the way for a new and large family of 2D materials with a general formula of <italic toggle=\"yes\">MA</italic>\u0000<sub>2</sub>\u0000<italic toggle=\"yes\">Z</italic>\u0000<sub>4</sub>. In this regard, motivated by this exciting family, we propose two structural phases (<italic toggle=\"yes\">1T</italic>- and <italic toggle=\"yes\">1H</italic>-) of <italic toggle=\"yes\">M</italic>Si<sub>2</sub>N<sub>4</sub> (<italic toggle=\"yes\">M</italic> = Ge, Sn, and Pb) monolayers and investigate their structural, vibrational, mechanical, electronic and optical properties by using first-principles methods. The two phases have similar cohesive energies, while the <italic toggle=\"yes\">1T</italic> structures are found to be more energetically favorable than their <italic toggle=\"yes\">1H</italic> counterparts. The analysis of phonon spectra and <italic toggle=\"yes\">ab initio</italic> molecular dynamics simulations indicate that all the suggested monolayers, except for <italic toggle=\"yes\">1H</italic>-GeSi<sub>2</sub>N<sub>4</sub>, are dynamically and thermally stable even at elevated temperatures. The elastic stability and mechanical properties of the proposed crystals are examined by calculating their elastic constants (<italic toggle=\"yes\">C</italic>\u0000<sub>\u0000<italic toggle=\"yes\">ij</italic>\u0000</sub>), in-plane stiffness (<inline-formula>\u0000<tex-math><?CDATA $Y_{textrm{2D}}$?></tex-math>\u0000<mml:math overflow=\"scroll\"><mml:msub><mml:mi>Y</mml:mi><mml:mrow><mml:mrow><mml:mtext>2D</mml:mtext></mml:mrow></mml:mrow></mml:msub></mml:math>\u0000<inline-graphic xlink:href=\"tdmad0f2bieqn1.gif\" xlink:type=\"simple\"></inline-graphic>\u0000</inline-formula>), Poisson’s ratio (<italic toggle=\"yes\">ν</italic>), and ultimate tensile strain (UTS). Remarkably, the considered systems exhibit prominent mechanical features such as substantial in-plane stiffness and high UTS. The calculated electronic band structures reveal that both the <italic toggle=\"yes\">1T</italic>- and <italic toggle=\"yes\">1H</italic>-<italic toggle=\"yes\">M</italic>Si<sub>2</sub>N<sub>4</sub> nanosheets are wide-band-gap semiconductors and their energy band gaps span from visible to ultraviolet region of the optical spectrum, suitable for high-performance nanoelectronic device applications. Lastly, the analysis of optical properties shows that the designed systems have isotropic optical spectra, and depending on the type of the system, robust absorption of ultraviolet and visible light (particularly in <italic toggle=\"yes\">1H</italic>-PbSi<sub>2</sub>N<sub>4</sub> monolayer) is predicted. Our study not only introduces new members to the family of 2D <italic toggle=\"yes\">MA</italic>\u0000<sub>2</sub>\u0000<italic toggle=\"yes\">Z</italic>\u0000<sub>4</sub> crystals but also unveils their intriguing physical properties and s","PeriodicalId":6812,"journal":{"name":"2D Materials","volume":"9 1","pages":""},"PeriodicalIF":5.5,"publicationDate":"2023-12-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"138686727","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Higher-order obstructed atomic insulator phase inpentagonal monolayer PdSe2","authors":"Victor Nuñez, Sergio Bravo, J D Correa, Leonor Chico, M Pacheco","doi":"10.1088/2053-1583/ad0f2a","DOIUrl":"https://doi.org/10.1088/2053-1583/ad0f2a","url":null,"abstract":"We investigate a pentagonal monolayer of palladium diselenide, a stable two-dimensional system, as a material realization of a crystalline phase with nontrivial topological electronic properties. We find that its electronic structure involves an atomic obstructed insulator related to higher-order topology, which is a consequence of the selenium-selenium bond dimerization along with inversion and time-reversal symmetry). By means of first-principles calculations and the analysis of symmetry indicators and topological invariants, we also characterize the electronic corner states associated with the atomic obstruction and compute the corresponding corner charge for a finite geometry, which is found to be not quantized but still inversion-protected. Applying tensile strain to the finite geometry we verify the robustness of the corner states and also achieve a strain-controlled variation of the corner charge magnitude.","PeriodicalId":6812,"journal":{"name":"2D Materials","volume":"9 1","pages":""},"PeriodicalIF":5.5,"publicationDate":"2023-12-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"138686648","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Oxygen vacancy in CoO/reduced graphene oxide composite for enhancing long-term effectiveness of photocatalytic CO2 reduction via mediating exciton","authors":"Rui Wang, Libo Du, Yang Liu, Yueliang Gu, Xiaolong Li, Yuehui Li","doi":"10.1088/2053-1583/ad0f2c","DOIUrl":"https://doi.org/10.1088/2053-1583/ad0f2c","url":null,"abstract":"Photocatalytic reduction of carbon dioxide (CO₂) has been expected to be an effective way to reduce carbon emissions. Designing photocatalytic materials with long-term effectiveness is the key of photocatalytic technology. In this work, CoO nanoparticles loaded on the surface of reduced graphene oxide (rGO) membranes on silicon substrate were <italic toggle=\"yes\">in-situ</italic> fabricated by one-step method. The resulting materials can convert CO₂ into carbon monoxide (CO) up to 70 h at a steady rate of ∼185 ± 30 <italic toggle=\"yes\">µ</italic>mol g⁻¹ h⁻¹ with a selectivity of nearly 100%. This material system contained rich oxygen vacancies and generated new oxygen vacancies during the photocatalytic process. Oxygen vacancies mediate the interactions with excitons: (i) promoting the dissociation of free excitons; (ii) leading to form bound excitons under the coupling effect with phonons, inhibiting the recombination of photogenerated electrons and holes as well as enhancing the long-term effectiveness of photocatalytic CO₂ reduction. We hope this work can provide valuable insights for the design and optimization of photocatalytic materials.","PeriodicalId":6812,"journal":{"name":"2D Materials","volume":"197 1","pages":""},"PeriodicalIF":5.5,"publicationDate":"2023-12-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"138686725","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Above-room-temperature ferromagnetism in a layered CrIr2Sn10 crystal","authors":"Xuzhou Sun, Ke Yang, Yuqiang Fang, Hua Wu, Fuqiang Huang","doi":"10.1088/2053-1583/ad0f29","DOIUrl":"https://doi.org/10.1088/2053-1583/ad0f29","url":null,"abstract":"Layered ferromagnetic (FM) materials are significant for nano-spintronic devices, however, low transition temperature and air instability remain major challenges for layered FM compounds. Herein, we have synthesized layered crystals CrIr₂Sn₁₀ with FM transition below 315 K. The ratio of the magnetization between in-plane and out-of-plane is 41. Moreover, the magnetism of CrIr₂Sn₁₀ is derived from the highly spin-polarized Cr atoms. CrIr₂Sn₁₀ will be a promising platform for 2D magnetism and spintronic devices.","PeriodicalId":6812,"journal":{"name":"2D Materials","volume":"7 1","pages":""},"PeriodicalIF":5.5,"publicationDate":"2023-11-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"138686643","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Polarization-tuneable excitonic spectral features in the optoelectronic response of atomically thin ReS₂.","authors":"Daniel Vaquero, Olga Arroyo Gascón, Juan Salvador-Sanchez, Pedro Luis L. Alcázar Ruano, Enrique Diez, Ana Perez-Rodriguez, Julián D. Correa, Francisco Dominguez-Adame, Leonor Chico, Jorge Quereda","doi":"10.1088/2053-1583/ad0402","DOIUrl":"https://doi.org/10.1088/2053-1583/ad0402","url":null,"abstract":"Abstract The low crystal symmetry of rhenium disulphide (ReS 2 ) leads to the emergence of dichroic optical and optoelectronic response, absent in other layered transition metal dichalcogenides, which could be exploited for device applications requiring polarization resolution. To date, spectroscopy studies on the optical response of ReS 2 have relied almost exclusively in characterization techniques involving optical detection, such as photoluminescence, absorbance, or reflectance spectroscopy. However, to realize the full potential of this material, it is necessary to develop knowledge on its optoelectronic response with spectral resolution. In this work, we study the polarization-dependent photocurrent spectra of few-layer ReS 2 photodetectors, both in room conditions and at cryogenic temperature. Our spectral measurements reveal two main exciton lines at energies matching those reported for optical spectroscopy measurements, as well as their excited states. Moreover, we also observe an additional exciton-like spectral feature with a photoresponse intensity comparable to the two main exciton lines. We attribute this feature, not observed in earlier photoluminescence measurements, to a non-radiative exciton transition. The intensities of the three main exciton features, as well as their excited states, modulate with linear polarization of light, each one acquiring maximal strength at a different polarization angle. We have performed first-principles exciton calculations employing the Bethe-Salpeter formalism, which corroborate our experimental findings. Our results bring new perspectives for the development of ReS 2 -based nanodevices.","PeriodicalId":6812,"journal":{"name":"2D Materials","volume":"4 10","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-11-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134993761","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Transient vortex dynamics and evolution of Bose metal from a 2D superconductor on MoS₂","authors":"Sreevidya Narayanan, Anoop Kamalasanan, Annu Anns Sunny, Madhu Thalakulam","doi":"10.1088/2053-1583/ad0b87","DOIUrl":"https://doi.org/10.1088/2053-1583/ad0b87","url":null,"abstract":"Abstract The true character of physical phenomena is thought to be reinforced as the system becomes disorder-free. In contrast, the two-dimensional (2D) superconductor is predicted to turn fragile and resistive away from the limit I → 0, B → 0, in the pinning-free regime. It is intriguing to note that the very vortices responsible for achieving superconductivity by pairing, condensation, and, thereby reducing the classical dissipation, render the state resistive driven by quantum fluctuations in the T → 0. While cleaner systems are being explored for technological improvements, the 2D superconductor turning resistive when influenced by weak electric and magnetic fields has profound consequences for quantum technologies. A metallic ground state in 2D is beyond the consensus of both Bosonic and Fermionic systems, and its origin and nature warrant a comprehensive theoretical understanding supplemented by in-depth experiments. A real-time observation of the influence of vortex dynamics on transport properties so far has been elusive. We explore the nature and fate of a low-viscous, clean, 2D superconducting state formed on an ionic-liquid gated few-layered MoS 2 sample. The vortex-core being dissipative, the elastic depinning, intervortex interaction, and the subsequent dynamics of the vortex-lattice leave transient signatures in the transport characteristics. The temperature and magnetic field dependence of the transient nature and the noise characteristics of the magnetoresistance confirm that quantum fluctuations are solely responsible for the Bose metal state and the fragility of the superconducting state.","PeriodicalId":6812,"journal":{"name":"2D Materials","volume":"86 24","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-11-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"135092576","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Growth of aligned and twisted hexagonal boron nitride on Ir(110)","authors":"Thomas Michely, Jason Bergelt, Affan Safeer, Alexander Bäder, Tobias Hartl, Jeison Fischer","doi":"10.1088/2053-1583/ad064a","DOIUrl":"https://doi.org/10.1088/2053-1583/ad064a","url":null,"abstract":"Abstract The growth of monolayer hexagonal boron nitride (h-BN) on Ir(110) through low-pressure chemical vapor deposition is investigated using low energy electron diffraction and scanning tunneling microscopy. We find that the growth of aligned h-BN on Ir(110) requires a growth temperature of 1500 K, whereas lower growth temperatures result in coexistence of aligned h-BN with twisted h-BN. The presence of the h-BN overlayer suppresses the formation of the nano-faceted ridge pattern known from clean Ir(110). Instead, we observe the formation of a <?CDATA $(1 times n)$?> <mml:math xmlns:mml=\"http://www.w3.org/1998/Math/MathML\" overflow=\"scroll\"> <mml:mo stretchy=\"false\">(</mml:mo> <mml:mn>1</mml:mn> <mml:mo>×</mml:mo> <mml:mi>n</mml:mi> <mml:mo stretchy=\"false\">)</mml:mo> </mml:math> reconstruction, with n such that the missing rows are in registry with the h-BN/Ir(110) moiré pattern. Our moiré analysis showcases a precise methodology for determining both the moiré periodicity and the h-BN lattice parameter on an fcc(110) surface. Aligned h-BN on Ir(110) is found to be slightly compressed compared to bulk h-BN, with a monolayer lattice parameter of <?CDATA $a_{mathrm{h-BN}} = (0.2489 pm 0.0006)$?> <mml:math xmlns:mml=\"http://www.w3.org/1998/Math/MathML\" overflow=\"scroll\"> <mml:msub> <mml:mi>a</mml:mi> <mml:mrow> <mml:mrow> <mml:mi mathvariant=\"normal\">h</mml:mi> <mml:mo>−</mml:mo> <mml:mi mathvariant=\"normal\">B</mml:mi> <mml:mi mathvariant=\"normal\">N</mml:mi> </mml:mrow> </mml:mrow> </mml:msub> <mml:mo>=</mml:mo> <mml:mo stretchy=\"false\">(</mml:mo> <mml:mn>0.2489</mml:mn> <mml:mo>±</mml:mo> <mml:mn>0.0006</mml:mn> <mml:mo stretchy=\"false\">)</mml:mo> </mml:math> nm. The lattice mismatch with the substrate along <?CDATA $left[ 1 bar{1} 0 right]$?> <mml:math xmlns:mml=\"http://www.w3.org/1998/Math/MathML\" overflow=\"scroll\"> <mml:mfenced close=\"]\" open=\"[\"> <mml:mrow> <mml:mn>1</mml:mn> <mml:mover> <mml:mn>1</mml:mn> <mml:mo>ˉ</mml:mo> </mml:mover> <mml:mn>0</mml:mn> </mml:mrow> </mml:mfenced> </mml:math> gives rise to a moiré periodicity of <?CDATA $a_{mathrm{m}} = 2.99 pm 0.08$?> <mml:math xmlns:mml=\"http://www.w3.org/1998/Math/MathML\" overflow=\"scroll\"> <mml:msub> <mml:mi>a</mml:mi> <mml:mrow> <mml:mrow> <mml:mi mathvariant=\"normal\">m</mml:mi> </mml:mrow> </mml:mrow> </mml:msub> <mml:mo>=</mml:mo> <mml:mn>2.99</mml:mn> <mml:mo>±</mml:mo> <mml:mn>0.08</mml:mn> </mml:math> nm.","PeriodicalId":6812,"journal":{"name":"2D Materials","volume":"71 24","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-11-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"135088048","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Enhanced vacuum ultraviolet photoemission from graphene nanoribbons","authors":"Martina Corso, Jorge Lobo-Checa, Andrew Weber, Ignacio Piquero-Zulaica, Zakaria Mohammed Abd El-Fattah, Patrick Le Fèvre, J. Enrique Ortega, Eugene Krasovskii","doi":"10.1088/2053-1583/ad047e","DOIUrl":"https://doi.org/10.1088/2053-1583/ad047e","url":null,"abstract":"Abstract Photon-energy dependence of photoemission from seven-atoms-wide armchair graphene nanoribbons (GNRs) is studied experimentally and theoretically up to <?CDATA $hbaromega = 95$?> <mml:math xmlns:mml=\"http://www.w3.org/1998/Math/MathML\" overflow=\"scroll\"> <mml:mi>ℏ</mml:mi> <mml:mi>ω</mml:mi> <mml:mo>=</mml:mo> <mml:mn>95</mml:mn> </mml:math> eV. A strong photon energy dependence of the normal emission from the valence band maximum (VB 1 ) is observed, sharply peaked at <?CDATA $hbaromega = 12$?> <mml:math xmlns:mml=\"http://www.w3.org/1998/Math/MathML\" overflow=\"scroll\"> <mml:mi>ℏ</mml:mi> <mml:mi>ω</mml:mi> <mml:mo>=</mml:mo> <mml:mn>12</mml:mn> </mml:math> eV. The detailed analysis of the light-polarization dependence of the photoemission from VB 1 unambiguously characterizes the symmetry of the state. The experimental observations are analyzed based on ab initio one-step theory of photoemission. Off-normal emission is studied in detail and its relation to the standing-wave character of the valence band states is discussed. Excellent agreement with the earlier experiment (Senkovskiy et al 2018 2D Mater. 5 035007) is obtained. Rapid variations of the intensity with the ribbon-transverse photoelectron momentum are predicted from the ab initio theory, which are at variance with the prediction of the tight-binding rigid-wall model. These findings can help interpret angle-resolved photoemission measurements of similar systems. Moreover, the strong enhancement of the photoyield could trigger the GNR application as narrow-band photodetectors and contribute to the design of novel photocathodes for vacuum ultraviolet photodetection.","PeriodicalId":6812,"journal":{"name":"2D Materials","volume":"173 S395","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-11-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"135775143","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Power efficient MoS2 synaptic devices based on maxwell-wagner interfacial charging in binary oxides","authors":"Jingyi Zou, Sen Lin, Tianyi Huang, Hefei Liu, Yushuang Liu, Yibai Zhong, Yuxuan Cosmi Lin, Han Wang, Sheng Shen, Min Xu, Xu Zhang","doi":"10.1088/2053-1583/ad015f","DOIUrl":"https://doi.org/10.1088/2053-1583/ad015f","url":null,"abstract":"Abstract Synaptic devices with tunable weight hold great promise in enabling non-von Neumann architecture for energy efficient computing. However, conventional metal-insulator-metal based two-terminal memristors share the same physical channel for both programming and reading, therefore the programming power consumption is dependent on the synaptic resistance states and can be particularly high when the memristor is in the low resistance states. Three terminal synaptic transistors, on the other hand, allow synchronous programming and reading and have been shown to possess excellent reliability. Here we present a binary oxide based three-terminal MoS 2 synaptic device, in which the channel conductance can be modulated by interfacial charges generated at the oxide interface driven by Maxwell-Wagner instability. The binary oxide stack serves both as an interfacial charge host and gate dielectrics. Both excitatory and inhibitory behaviors are experimentally realized, and the presynaptic potential polarity can be effectively controlled by engineering the oxide stacking sequence, which is a unique feature compared with existing charge-trap based synaptic devices and provides a new tuning knob for controlling synaptic device characteristics. By adopting a three-terminal transistor structure, the programming channel and reading channel are physically separated and the programming power consumption can be kept constantly low (∼50 pW) across a wide dynamic range of 10 5 . This work demonstrates a complementary metal oxide semiconductor compatible approach to build power efficient synaptic devices for artificial intelligence applications.","PeriodicalId":6812,"journal":{"name":"2D Materials","volume":"178 S433","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-11-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"135775277","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}