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Thickness dependent tribological and magnetic behavior of two-dimensional cobalt telluride (CoTe2) 二维碲化镉(CoTe2)厚度相关的摩擦学和磁学行为
IF 5.5 3区 材料科学
2D Materials Pub Date : 2024-04-10 DOI: 10.1088/2053-1583/ad3cec
Surbhi Slathia, Cencen Wei, Manoj Tripathi, R. Tromer, Solomon Demiss Negedu, Conor S. Boland, Suman Sarkar, D. S. Galvao, Alan Dalton, Chandramani Tiwary
{"title":"Thickness dependent tribological and magnetic behavior of two-dimensional cobalt telluride (CoTe2)","authors":"Surbhi Slathia, Cencen Wei, Manoj Tripathi, R. Tromer, Solomon Demiss Negedu, Conor S. Boland, Suman Sarkar, D. S. Galvao, Alan Dalton, Chandramani Tiwary","doi":"10.1088/2053-1583/ad3cec","DOIUrl":"https://doi.org/10.1088/2053-1583/ad3cec","url":null,"abstract":"\u0000 Two-dimensional (2D) layered transition-metal based tellurides (chalcogens) are known to harness their surface atoms’ characteristics to enhance topographical activities for energy conversion, storage, and magnetic applications. The gradual stacking of each sheet alters the surface atoms’ subtle features such as lattice expansion, leading to several phenomena and rendering tunable properties. Here, we have evaluated thickness- dependent mechanical properties (nanoscale mechanics, tribology, potential surface distributions, interfacial interaction) of 2D CoTe2sheets and magnetic behavior using surface probe techniques. The experimental observations are further supported and explained with theoretical investigations: density functional theory (DFT) and molecular dynamics (MD). The variation in properties observed in theoretical investigations unleashes the crucial role of crystal planes of the CoTe2. The presented results are beneficial in expanding the use of the 2D telluride family in flexible electronics, piezo sensors, tribo-generators, and next-generation memory devices.","PeriodicalId":6812,"journal":{"name":"2D Materials","volume":null,"pages":null},"PeriodicalIF":5.5,"publicationDate":"2024-04-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140717932","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Precise structure and energy of group 6 transition metal dichalcogenide homo- and heterobilayers in high-symmetry configurations 高对称性构型的第 6 族过渡金属二钴化物同硅层和异硅层的精确结构和能量
IF 5.5 3区 材料科学
2D Materials Pub Date : 2024-04-05 DOI: 10.1088/2053-1583/ad3b0f
Birkan Emrem, Jan‐Ole Joswig, Thomas Heine
{"title":"Precise structure and energy of group 6 transition metal dichalcogenide homo- and heterobilayers in high-symmetry configurations","authors":"Birkan Emrem, Jan‐Ole Joswig, Thomas Heine","doi":"10.1088/2053-1583/ad3b0f","DOIUrl":"https://doi.org/10.1088/2053-1583/ad3b0f","url":null,"abstract":"\u0000 Two-dimensional group 6 transition metal dichalcogenide (2D TMDC) bilayers show various high-symmetry stacking configurations, which have also been observed in extended domains formed in their twisted homo- and heterobilayers. The interlayer energy varies for these stacking configurations, and the energy differences determine the relative size of the stacking domains. Therefore, the precise prediction of the composition- and stacking-dependent interlayer energy is crucial to model the domain structure of 2D TMDCs in their twisted bilayer homo- and heterostructures. For the validation of approximate methods that are necessary to tackle these systems encompassing thousands of atoms precise reference data is still lacking. Here, we employ the Random Phase Approximation (RPA) on previously validated SCAN-rVV10 geometries to obtain interaction energies of state-of-the-art accuracy on the six high-symmetry stacking configurations (Hhh, HhM, HhX, Rhh, RhM, and RhX) of MX2 (M=Mo, W, X=S, Se) bilayers and compare them with dispersion-corrected DFT functionals PBE-D3(BJ), PBE-rVV10L, and SCAN-rVV10. We identify SCAN-rVV10 as most reliable DFT variant with an average deviation of 1.2 meV/atom in relative energies from the RPA reference, and a root mean squared error (RMSE) of less than 2 meV/atom for interlayer interaction energies. We find interlayer distances obtained by PBE-D3(BJ) too short, with an impact on the electronic structure, which results in the incorrect prediction of the band gap character in some cases. A further result of this work is the significant lowering of interlayer energy and increasing of interlayer distance in the high-energy stacking configurations. These stackings can be accessible via shear strain and promote exfoliation.","PeriodicalId":6812,"journal":{"name":"2D Materials","volume":null,"pages":null},"PeriodicalIF":5.5,"publicationDate":"2024-04-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140740694","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Tailoring coercive fields and the Curie temperature via proximity coupling in WSe2/Fe3GeTe2 van der Waals heterostructures 通过 WSe2/Fe3GeTe2 范德瓦尔斯异质结构中的邻近耦合调节胁迫场和居里温度
IF 5.5 3区 材料科学
2D Materials Pub Date : 2024-04-05 DOI: 10.1088/2053-1583/ad3b12
Guodong Ma, Renjun Du, Fuzhuo Lian, Song Bao, Zijing Guo, Xiaofan Cai, Jingkuan Xiao, Yaqing Han, Di Zhang, Siqi Jiang, Jiabei Huang, Xinglong Wu, Alexander S Mayorov, Jinsheng Wen, Lei Wang, Geliang Yu
{"title":"Tailoring coercive fields and the Curie temperature via proximity coupling in WSe2/Fe3GeTe2 van der Waals heterostructures","authors":"Guodong Ma, Renjun Du, Fuzhuo Lian, Song Bao, Zijing Guo, Xiaofan Cai, Jingkuan Xiao, Yaqing Han, Di Zhang, Siqi Jiang, Jiabei Huang, Xinglong Wu, Alexander S Mayorov, Jinsheng Wen, Lei Wang, Geliang Yu","doi":"10.1088/2053-1583/ad3b12","DOIUrl":"https://doi.org/10.1088/2053-1583/ad3b12","url":null,"abstract":"\u0000 Hybrid structures consisting of two-dimensional (2D) magnets and semiconductors have exhibited extensive functionalities in spintronics and opto-spintronics. In this work, we have fabricated WSe2/Fe3GeTe2 van der Waals (vdW) heterostructures and investigated proximity effects on 2D magnetism. Through reflective magnetic circular dichroism (RMCD), we have observed a temperature-dependent modulation of magnetic order in the heterostructure. For temperatures above 40 K, WSe2-covered Fe3GeTe2 exhibits a larger coercive field than that observed in bare Fe3GeTe2, accompanied by a noticeable enhancement of the Curie temperature by 21 K. This strengthening suggests an increase in magnetic anisotropy in the interfacial Fe3GeTe2 layer, which can be attributed to the spin-orbit coupling (SOC) proximity effect induced by the adjacent WSe2 layers. However, at much lower temperatures (T<20 K), a non-monotonic modification of the coercive field is observed, showing both reduction and enhancement, which depends on the thickness of the WSe2 and Fe3GeTe2 layers. Moreover, an unconventional two-step magnetization process emerges in the heterostructure, indicating the short-range nature of SOC proximity effects. Our findings on proximity coupling may shed light on the design of future spintronic and memory devices based on 2D magnetic heterostructures.","PeriodicalId":6812,"journal":{"name":"2D Materials","volume":null,"pages":null},"PeriodicalIF":5.5,"publicationDate":"2024-04-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140738036","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Moire-enabled topological superconductivity in twisted bilayer graphene 扭曲双层石墨烯中的摩尔拓扑超导电性
IF 5.5 3区 材料科学
2D Materials Pub Date : 2024-04-05 DOI: 10.1088/2053-1583/ad3b0c
M. Khosravian, Elena Bascones, J. Lado
{"title":"Moire-enabled topological superconductivity in twisted bilayer graphene","authors":"M. Khosravian, Elena Bascones, J. Lado","doi":"10.1088/2053-1583/ad3b0c","DOIUrl":"https://doi.org/10.1088/2053-1583/ad3b0c","url":null,"abstract":"\u0000 Twisted van der Waals materials have risen as highly tunable platforms for realizing unconventional superconductivity. Here we demonstrate how a topological superconducting state can be driven in a twisted graphene multilayer at a twist angle of approximately 1.6 degrees proximitized to other 2D materials. We show that an encapsulated twisted bilayer subject to induced Rashba spin-orbit coupling, s-wave superconductivity, and exchange field generates a topological superconducting state enabled by the moir'e pattern. We demonstrate a variety of topological states with different Chern numbers highly tunable through doping, strain, and bias voltage. Our proposal does not depend on fine-tuning the twist angle, but solely on the emergence of moir'e minibands and is applicable for twist angles between 1.3 and 3 degrees. Our results establish the potential of twisted graphene bilayers to create artificial topological superconductivity without requiring ultraflat dispersions.","PeriodicalId":6812,"journal":{"name":"2D Materials","volume":null,"pages":null},"PeriodicalIF":5.5,"publicationDate":"2024-04-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140740770","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
High spin-Chern-number insulator in α-antimonene with a hidden topological phase 具有隐藏拓扑相的α-锑烯中的高自旋-切尔数绝缘体
IF 5.5 3区 材料科学
2D Materials Pub Date : 2024-03-26 DOI: 10.1088/2053-1583/ad3136
Baokai Wang, Xiaoting Zhou, Yi-Chun Hung, Yen-Chuan Lin, Hsin Lin, Arun Bansil
{"title":"High spin-Chern-number insulator in α-antimonene with a hidden topological phase","authors":"Baokai Wang, Xiaoting Zhou, Yi-Chun Hung, Yen-Chuan Lin, Hsin Lin, Arun Bansil","doi":"10.1088/2053-1583/ad3136","DOIUrl":"https://doi.org/10.1088/2053-1583/ad3136","url":null,"abstract":"For a time-reversal symmetric system, the quantum spin Hall phase is assumed to be the same as the <inline-formula>\u0000<tex-math><?CDATA $mathbb{Z}_2$?></tex-math>\u0000<mml:math overflow=\"scroll\"><mml:mrow><mml:msub><mml:mrow><mml:mi mathvariant=\"double-struck\">Z</mml:mi></mml:mrow><mml:mn>2</mml:mn></mml:msub></mml:mrow></mml:math>\u0000<inline-graphic xlink:href=\"tdmad3136ieqn1.gif\" xlink:type=\"simple\"></inline-graphic>\u0000</inline-formula> topological insulator phase in the existing literature. The spin Chern number <inline-formula>\u0000<tex-math><?CDATA $mathcal{C}_s$?></tex-math>\u0000<mml:math overflow=\"scroll\"><mml:mrow><mml:msub><mml:mrow><mml:mi>C</mml:mi></mml:mrow><mml:mi>s</mml:mi></mml:msub></mml:mrow></mml:math>\u0000<inline-graphic xlink:href=\"tdmad3136ieqn2.gif\" xlink:type=\"simple\"></inline-graphic>\u0000</inline-formula> is presumed to yield the same topological classification as the <inline-formula>\u0000<tex-math><?CDATA $mathbb{Z}_2$?></tex-math>\u0000<mml:math overflow=\"scroll\"><mml:mrow><mml:msub><mml:mrow><mml:mi mathvariant=\"double-struck\">Z</mml:mi></mml:mrow><mml:mn>2</mml:mn></mml:msub></mml:mrow></mml:math>\u0000<inline-graphic xlink:href=\"tdmad3136ieqn3.gif\" xlink:type=\"simple\"></inline-graphic>\u0000</inline-formula> invariant. Here, by investigating the electronic structures of monolayer <italic toggle=\"yes\">α</italic>-phase group V elements, we uncover the presence of a topological phase in <italic toggle=\"yes\">α</italic>-Sb, which can be characterized by a spin Chern number <inline-formula>\u0000<tex-math><?CDATA $mathcal{C}_s$?></tex-math>\u0000<mml:math overflow=\"scroll\"><mml:mrow><mml:msub><mml:mrow><mml:mi>C</mml:mi></mml:mrow><mml:mi>s</mml:mi></mml:msub></mml:mrow></mml:math>\u0000<inline-graphic xlink:href=\"tdmad3136ieqn4.gif\" xlink:type=\"simple\"></inline-graphic>\u0000</inline-formula> = 2, even though it is <inline-formula>\u0000<tex-math><?CDATA $mathbb{Z}_2$?></tex-math>\u0000<mml:math overflow=\"scroll\"><mml:mrow><mml:msub><mml:mrow><mml:mi mathvariant=\"double-struck\">Z</mml:mi></mml:mrow><mml:mn>2</mml:mn></mml:msub></mml:mrow></mml:math>\u0000<inline-graphic xlink:href=\"tdmad3136ieqn5.gif\" xlink:type=\"simple\"></inline-graphic>\u0000</inline-formula> trivial. Although <italic toggle=\"yes\">α</italic>-As and Sb would thus be classified as trivial insulators within the classification schemes, we demonstrate the existence of a phase transition between <italic toggle=\"yes\">α</italic>-As and Sb, which is induced by band inversions at two generic <italic toggle=\"yes\">k</italic> points. Without spin–orbit coupling (SOC), <italic toggle=\"yes\">α</italic>-As is a trivial insulator, while <italic toggle=\"yes\">α</italic>-Sb is a Dirac semimetal with four Dirac points (DPs) located away from the high-symmetry lines. Inclusion of the SOC gaps out the DPs and induces a nontrivial Berry curvature, endowing <italic toggle=\"yes\">α</italic>-Sb with a high spin Chern number of <inline-formula>\u0000<tex-math><?CDATA $mathcal{C}_s$?></tex-math>\u0000<mml:math overflow=\"scroll\"><mml:mrow><mml:msub><mml:mrow><mml:mi>C</mml:mi><","PeriodicalId":6812,"journal":{"name":"2D Materials","volume":null,"pages":null},"PeriodicalIF":5.5,"publicationDate":"2024-03-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140313720","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Optical signatures of moiré trapped biexcitons 摩尔陷双复电子的光学特征
IF 5.5 3区 材料科学
2D Materials Pub Date : 2024-03-19 DOI: 10.1088/2053-1583/ad2fe6
S. Brem, E. Malic
{"title":"Optical signatures of moiré trapped biexcitons","authors":"S. Brem, E. Malic","doi":"10.1088/2053-1583/ad2fe6","DOIUrl":"https://doi.org/10.1088/2053-1583/ad2fe6","url":null,"abstract":"\u0000 Atomically thin heterostructures formed by twisted transition metal dichalcogenides can be used to create periodic moiré patterns. The emerging moiré potential can trap interlayer excitons into arrays of strongly interacting bosons, which form a unique platform to study strongly correlated many-body states. In order to create and manipulate these exotic phases of matter, a microscopic understanding of exciton–exciton interactions and their manifestation in these systems becomes indispensable. Recent density-dependent photoluminescence (PL) measurements have revealed novel spectral features indicating the formation of trapped multi-exciton states providing important information about the interaction strength. In this work, we develop a microscopic theory to model the PL spectrum of trapped multi-exciton complexes focusing on the emission from moiré trapped single- and biexcitons. Based on an excitonic Hamiltonian we determine the properties of trapped biexcitons as function of twist angle and use these insights to predict the luminescence spectrum of moiré excitons for different densities. We demonstrate how side peaks resulting from transitions to excited states and a life time analysis can be utilized as indicators for moiré trapped biexcitons and provide crucial information about the excitonic interaction strength.","PeriodicalId":6812,"journal":{"name":"2D Materials","volume":null,"pages":null},"PeriodicalIF":5.5,"publicationDate":"2024-03-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140229567","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Symmetry breaking in vanadium trihalides 三卤化钒中的对称破缺
IF 5.5 3区 材料科学
2D Materials Pub Date : 2024-03-15 DOI: 10.1088/2053-1583/ad3137
Luigi Camerano, Gianni Profeta
{"title":"Symmetry breaking in vanadium trihalides","authors":"Luigi Camerano, Gianni Profeta","doi":"10.1088/2053-1583/ad3137","DOIUrl":"https://doi.org/10.1088/2053-1583/ad3137","url":null,"abstract":"In the light of new experimental evidence we study the insulating ground state of the <inline-formula>\u0000<tex-math><?CDATA $3d^2$?></tex-math>\u0000<mml:math overflow=\"scroll\"><mml:mrow><mml:mn>3</mml:mn><mml:msup><mml:mi>d</mml:mi><mml:mn>2</mml:mn></mml:msup></mml:mrow></mml:math>\u0000<inline-graphic xlink:href=\"tdmad3137ieqn1.gif\" xlink:type=\"simple\"></inline-graphic>\u0000</inline-formula>-transition metal trihalides V<italic toggle=\"yes\">X</italic>\u0000<sub>3</sub> (<italic toggle=\"yes\">X</italic> = Cl, I). Based on density functional theory with the Hubbard correction we systematically show how these systems host multiple metastable states characterised by different orbital ordering and electronic behaviour. Our calculations reveal the importance of imposing a precondition in the on site <italic toggle=\"yes\">d</italic> density matrix and of considering a symmetry broken unit cell to correctly take into account the correlation effects in a mean field framework. Furthermore we ultimately found a ground state with the <inline-formula>\u0000<tex-math><?CDATA $a_{1g}$?></tex-math>\u0000<mml:math overflow=\"scroll\"><mml:mrow><mml:msub><mml:mi>a</mml:mi><mml:mrow><mml:mn>1</mml:mn><mml:mi>g</mml:mi></mml:mrow></mml:msub></mml:mrow></mml:math>\u0000<inline-graphic xlink:href=\"tdmad3137ieqn2.gif\" xlink:type=\"simple\"></inline-graphic>\u0000</inline-formula> orbital occupied in a distorted V<italic toggle=\"yes\">X</italic>\u0000<sub>6</sub> octahedra driven by an optical phonon mode.","PeriodicalId":6812,"journal":{"name":"2D Materials","volume":null,"pages":null},"PeriodicalIF":5.5,"publicationDate":"2024-03-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140313534","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Anomalous redshift in interlayer exciton emission with increasing twist angle in WSe2/MoSe2 heterostructures WSe2/MoSe2 异质结构中层间激子发射随扭转角增大而发生的反常重移
IF 5.5 3区 材料科学
2D Materials Pub Date : 2024-03-15 DOI: 10.1088/2053-1583/ad349f
C. Palekar, Joakim Hagel, Bárbara Rosa, S. Brem, Ching-Wen Shih, I. Limame, M. von Helversen, S. Tongay, E. Malic, S. Reitzenstein
{"title":"Anomalous redshift in interlayer exciton emission with increasing twist angle in WSe2/MoSe2 heterostructures","authors":"C. Palekar, Joakim Hagel, Bárbara Rosa, S. Brem, Ching-Wen Shih, I. Limame, M. von Helversen, S. Tongay, E. Malic, S. Reitzenstein","doi":"10.1088/2053-1583/ad349f","DOIUrl":"https://doi.org/10.1088/2053-1583/ad349f","url":null,"abstract":"\u0000 Van der Waals heterostructures utilizing semiconducting transition metal dichalcogenide (TMDC) monolayers have surfaced as compelling candidates due to their intriguing optical characteristics, which can be effectively controlled by the manipulation of the stacking twist angle. This study investigates the intricate correlation between twist angle, band offset, and interlayer exciton emission within twisted WSe2/MoSe2 heterostructures. Our findings suggest a crucial influence of monolayer stacking order on the band offset and the dipole orientation in twisted heterostructures that leads to either blueshift or redshift in emission energy. Herein, we fabricate heterobilayers with twist angles varying from 1° to 56° and observe an anomalous redshift energy of 100 meV in the interlayer exciton emission. Additionally, photoluminescence excitation spectroscopy measurements highlight the systematic twist angle dependence of intralayer exciton resonances, indicating significant angle dependent effects on individual monolayer bandgaps and on the interlayer coupling strength. Our fundamental study of exciton resonances provides comprehensive insights into the nuanced interplay between twist angle, dipole orientation, and dielectric asymmetry, providing a deeper understanding of the factors governing the optical properties of layered TMDC heterostructures.","PeriodicalId":6812,"journal":{"name":"2D Materials","volume":null,"pages":null},"PeriodicalIF":5.5,"publicationDate":"2024-03-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140238724","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Apparent color and Raman vibrational modes of the high-temperature superconductor Bi2Sr2CaCu2O8+δ exfoliated flakes 高温超导体 Bi2Sr2CaCu2O8+δ 剥离薄片的显色和拉曼振动模式
IF 5.5 3区 材料科学
2D Materials Pub Date : 2024-03-15 DOI: 10.1088/2053-1583/ad349e
Ignacio Figueruelo-Campanero, Adolfo del Campo, Gladys Nieva, Elvira M Gonzalez, A. Serrano, Mariela Menghini
{"title":"Apparent color and Raman vibrational modes of the high-temperature superconductor Bi2Sr2CaCu2O8+δ exfoliated flakes","authors":"Ignacio Figueruelo-Campanero, Adolfo del Campo, Gladys Nieva, Elvira M Gonzalez, A. Serrano, Mariela Menghini","doi":"10.1088/2053-1583/ad349e","DOIUrl":"https://doi.org/10.1088/2053-1583/ad349e","url":null,"abstract":"\u0000 Studying and controlling the properties of individual exfoliated materials is one of the first steps towards the fabrication of complex van der Waals systems. In this work, we present a systematic study of optical properties and micro-Raman spectroscopy on exfoliated flakes of the high-temperature superconductor Bi2Sr2CaCu2O8+δ (BSCCO-2212). We demonstrate that these are quick and non-invasive techniques for studying air sensitive materials. The apparent color of BSCCO-2212 exfoliated flakes on SiO2/Si has allowed a rough and fast identification of the number of layers. By analyzing the optical contrast of different flakes we determined the complex refractive index in the visible range and found the optimal combination of illumination wavelength and substrate properties for the identification of flakes with different thickness. In addition, we report the hardening of the most characteristic Raman modes as flake thickness decreases, possibly caused by strain in the BiO and CuO2 planes. Moreover, the evolution of the Raman modes establishes a second approach to determine the thickness of BSCCO-2212 thin flakes. As BSCCO-2212 is a challenging material due to its sensitivity to ambient conditions, the present work provides a guide for the fabrication and characterization of complex van der Waals systems paving the way for studying heterostructures based on unconventional superconductors in the 2D limit.","PeriodicalId":6812,"journal":{"name":"2D Materials","volume":null,"pages":null},"PeriodicalIF":5.5,"publicationDate":"2024-03-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140239089","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Enhanced sensitivity and tunability of thermomechanical resonance near the buckling bifurcation 增强屈曲分叉附近热机械共振的灵敏度和可调性
IF 5.5 3区 材料科学
2D Materials Pub Date : 2024-03-15 DOI: 10.1088/2053-1583/ad3133
Hanqing Liu, Gabriele Baglioni, Carla Boix-Constant, Herre S J van der Zant, Peter G Steeneken, Gerard J Verbiest
{"title":"Enhanced sensitivity and tunability of thermomechanical resonance near the buckling bifurcation","authors":"Hanqing Liu, Gabriele Baglioni, Carla Boix-Constant, Herre S J van der Zant, Peter G Steeneken, Gerard J Verbiest","doi":"10.1088/2053-1583/ad3133","DOIUrl":"https://doi.org/10.1088/2053-1583/ad3133","url":null,"abstract":"The high susceptibility of ultrathin two-dimensional (2D) material resonators to force and temperature makes them ideal systems for sensing applications and exploring thermomechanical coupling. Although the dynamics of these systems at high stress has been thoroughly investigated, their behavior near the buckling transition has received less attention. Here, we demonstrate that the force sensitivity and frequency tunability of 2D material resonators are significantly enhanced near the buckling bifurcation. This bifurcation is triggered by compressive displacement that we induce via thermal expansion of the devices, while measuring their dynamics via an optomechanical technique. We understand the frequency tuning of the devices through a mechanical buckling model, which allows to extract the central deflection and boundary compressive displacement of the membrane. Surprisingly, we obtain a remarkable enhancement of up to 14× the vibration amplitude attributed to a very low stiffness of the membrane at the buckling transition, as well as a high frequency tunability by temperature of more than 4.02<inline-formula>\u0000<tex-math><?CDATA $%$?></tex-math>\u0000<mml:math overflow=\"scroll\"><mml:mrow><mml:mi mathvariant=\"normal\">%</mml:mi></mml:mrow></mml:math>\u0000<inline-graphic xlink:href=\"tdmad3133ieqn1.gif\" xlink:type=\"simple\"></inline-graphic>\u0000</inline-formula> K<sup>−1</sup>. The presented results provide insights into the effects of buckling on the dynamics of free-standing 2D materials and thereby open up opportunities for the realization of 2D resonant sensors with buckling-enhanced sensitivity.","PeriodicalId":6812,"journal":{"name":"2D Materials","volume":null,"pages":null},"PeriodicalIF":5.5,"publicationDate":"2024-03-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140313536","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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