2021 IEEE 48th Photovoltaic Specialists Conference (PVSC)最新文献_第8页

Zero Energy Educational Building: A Case Study of The Energy and Environmental Engineering Building in The British University in Egypt 零能耗教育大楼——以埃及英国大学能源与环境工程大楼为例

2021 IEEE 48th Photovoltaic Specialists Conference (PVSC) Pub Date : 2021-06-20 DOI: 10.1109/PVSC43889.2021.9518995

Haidy Alaa, Noureddine Khaled, Rania Rushdy, T. Hatem

引用次数: 4

Martian Dust Abrasion Damage on Solar Arrays: HALT Experimental Investigation and Opportunity Rover Performance Analysis 火星尘埃对太阳能电池阵的磨损损伤:HALT实验研究和机遇号火星车性能分析

2021 IEEE 48th Photovoltaic Specialists Conference (PVSC) Pub Date : 2021-06-20 DOI: 10.1109/PVSC43889.2021.9518797

Lyndsey McMillon-Brown, T. Peshek, A. Pal, J. Mcnatt

{"title":"Martian Dust Abrasion Damage on Solar Arrays: HALT Experimental Investigation and Opportunity Rover Performance Analysis","authors":"Lyndsey McMillon-Brown, T. Peshek, A. Pal, J. Mcnatt","doi":"10.1109/PVSC43889.2021.9518797","DOIUrl":"https://doi.org/10.1109/PVSC43889.2021.9518797","url":null,"abstract":"We investigated the utility of ground-based highly accelerated life testing (HALT) on epitaxial lift-off (ELO) triple-junction coverglass interconnected cells (CICs) after exposure to simulated Martian dust storms. Dust storm impingement was replicated by sandblasting CICs with Mars dust simulant replicating conditions similar to the weather conditions reported by the Viking landers. We observed that even in cases when there are no observable open circuit voltage (VOC) losses, the minority carrier lifetime is reduced. Short circuit current (JSC) losses can be recovered upon cleaning, suggesting JSC losses are not linked to permanent damage, like cell cracking. This suggests a permanent degradation could be determined by quantifying the difference between recoverable and non-recoverable power loss. We mined field data from the Mars Exploration Rover, Opportunity and extracted a degradation rate to compare to our experimental data. We found exceptional agreement between 4.9 Martian years of mined field data (9.4%) and the irreversible damage observed in our HALT experiment (9.7%). We demonstrate that the laboratory method for exposing CICs to Martian dust storm conditions well represents the physical reality of long duration CIC operation on Mars.","PeriodicalId":6788,"journal":{"name":"2021 IEEE 48th Photovoltaic Specialists Conference (PVSC)","volume":"5 Med Sect 1","pages":"0229-0232"},"PeriodicalIF":0.0,"publicationDate":"2021-06-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"83381552","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Global Horizontal Irradiance Forecast at Kanto Region in Japan by Qunatile Regression of Support Vector Machine 支持向量机分次回归预测日本关东地区全球水平辐照度

2021 IEEE 48th Photovoltaic Specialists Conference (PVSC) Pub Date : 2021-06-20 DOI: 10.1109/PVSC43889.2021.9518856

T. Takamatsu, Hideaki Ohtake, T. Oozeki

引用次数: 0

MOS technology development on 150 mm Ge wafers 150mm锗晶圆上MOS技术的发展

2021 IEEE 48th Photovoltaic Specialists Conference (PVSC) Pub Date : 2021-06-20 DOI: 10.1109/PVSC43889.2021.9518726

R. Ahrenkiel, S. Holland

{"title":"MOS technology development on 150 mm Ge wafers","authors":"R. Ahrenkiel, S. Holland","doi":"10.1109/PVSC43889.2021.9518726","DOIUrl":"https://doi.org/10.1109/PVSC43889.2021.9518726","url":null,"abstract":"High purity crystalline germanium has several applications in optoelectronic devices. These include as a substrate and active component of tandem, high efficiency solar cells used in concentrator and space photovoltaics. Here, we are looking at the development of a Ge-based charge coupled devices (CCD) to be used in conjunction with large, terrestrial telescopes used for astronomical studies of red shifts in galaxies and other celestial bodies. In one photovoltaic phtotvoltaic application, large bulk recombination lifetimes are significant for efficiency improvement when a p-n junction is incorporated into the substrate of a tandem device. In the CCD device, the bulk lifetime is critical for low dark current. Also, the development of an insulating gate technology, with low interface recombination velocity, is a critical component of CCD development. Here we used transient photoconductive decay as a metric to evaluate the performance of such interfaces. Bulk lifetimes exceeding 2 ms were found in some high purity materials. The effects on the lifetimes after annealing of the Ge at 300C and 600C was studied. The results of various processing experiments and protocols will be reviewed.","PeriodicalId":6788,"journal":{"name":"2021 IEEE 48th Photovoltaic Specialists Conference (PVSC)","volume":"13 1","pages":"1936-1940"},"PeriodicalIF":0.0,"publicationDate":"2021-06-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"82447776","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Performance analysis of a BAPV bifacial system in Norway 挪威BAPV双面系统的性能分析

2021 IEEE 48th Photovoltaic Specialists Conference (PVSC) Pub Date : 2021-06-20 DOI: 10.1109/PVSC43889.2021.9518963

H. N. Riise, Mari B. Øgaard, Junjie Zhu, C. C. You, F. Andersson, Tommy Bønsnæs, J. Young, S. Foss

引用次数: 0

A Contactless Patterned Plasma Processing for Interdigitated Back Contact Silicon Heterojunction Solar Cells Fabrication 互指背接触硅异质结太阳能电池的非接触式等离子体加工

2021 IEEE 48th Photovoltaic Specialists Conference (PVSC) Pub Date : 2021-06-20 DOI: 10.1109/PVSC43889.2021.9518831

Junkang Wang, Monalisa Ghosh, Fatima Ouadjane, Borja Carbonell, P. Bulkin, D. Daineka, K. Ouaras, Pere Roca i Cabarrocas, S. Filonovich, J. Alvarez, E. Johnson

{"title":"A Contactless Patterned Plasma Processing for Interdigitated Back Contact Silicon Heterojunction Solar Cells Fabrication","authors":"Junkang Wang, Monalisa Ghosh, Fatima Ouadjane, Borja Carbonell, P. Bulkin, D. Daineka, K. Ouaras, Pere Roca i Cabarrocas, S. Filonovich, J. Alvarez, E. Johnson","doi":"10.1109/PVSC43889.2021.9518831","DOIUrl":"https://doi.org/10.1109/PVSC43889.2021.9518831","url":null,"abstract":"We present results from the application of a novel, contactless patterning technique to form the doped fingers required for interdigitated back contact silicon heterojunction (IBC-SHJ) solar cells. The technique involves patterning the RF powered electrode in a custom-designed RF-PECVD chamber. The patterned powered electrode – which has 1 mm wide opening-slits in it - is brought in close proximity to the substrate surface, to localize the plasma and the process it performs. In this work, the localized plasma process being employed is an NF3/Ar etching, and is used to form doped fingers that are sub-mm wide and 60 mm long. The interdigitated structure (alternating electron and hole collection zones) is created by first uniformly depositing an intrinsic/n-type a-Si:H passivation stack, followed by an n-type/p-type µc-Si:H recombination junction on the rear side. A passivation layer is also deposited on the front side. The regions for the hole collection zones are then etched down to the intrinsic a-Si:H layer, and finally, a uniform p-type a-Si:H layer is deposited everywhere. The etched finger areas are first investigated by profilometry and spectroscopic ellipsometry, showing that the process can be controlled to leave as little as a few nanometers of passivating intrinsic a-Si:H. This fine control is achieved by pulsing the plasma, to slow the etching rate to a few Å/s. To evaluate the detailed opto-electronic properties of the structure, the samples are mapped out using two contactless techniques: Photoluminescence and Surface Photovoltage measurements (done with a macroscopic scanning Kelvin probe performed under dark and illuminated conditions). These measurements enable one to see both zones of degraded passivation, and the effectiveness of the doped regions in generating an open circuit voltage under illumination.","PeriodicalId":6788,"journal":{"name":"2021 IEEE 48th Photovoltaic Specialists Conference (PVSC)","volume":"11 1","pages":"0596-0601"},"PeriodicalIF":0.0,"publicationDate":"2021-06-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"81039959","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Potential Induced Degradation Mechanism in Rear-Emitter Bifacial Silicon Heterojunction Solar Cells Encapsulated in Different Module Structures 不同组件结构封装后发射极双面硅异质结太阳能电池的电位诱导降解机理

2021 IEEE 48th Photovoltaic Specialists Conference (PVSC) Pub Date : 2021-06-20 DOI: 10.1109/PVSC43889.2021.9518967

O. A. Arruti, Luca Gnocchi, Q. Jeangros, A. Virtuani, C. Ballif

{"title":"Potential Induced Degradation Mechanism in Rear-Emitter Bifacial Silicon Heterojunction Solar Cells Encapsulated in Different Module Structures","authors":"O. A. Arruti, Luca Gnocchi, Q. Jeangros, A. Virtuani, C. Ballif","doi":"10.1109/PVSC43889.2021.9518967","DOIUrl":"https://doi.org/10.1109/PVSC43889.2021.9518967","url":null,"abstract":"Recent studies showed that silicon heterojunction (SHJ) solar cells can be prone to potential induced degradation (PID) when encapsulated with ethylene vinyl acetate (EVA). Here, to gain understanding in the role of EVA, we perform PID test in humid conditions (85°C/85% RH) under a negative bias (-1000V). We study the effect of moisture ingress and cover materials by using different module structures. We focus on studying both sides of the cell for modules packaged in a glass/glass scheme after 500 hours of test (corresponding to ~5 times the duration foreseen by the corresponding IEC standard). The front-side degradation is dominated by a reduction in short-circuit current (JSC), whereas the rear-side degradation is driven by a loss in fill factor (FF). EQE measurements show that increased front-surface recombination is largely responsible for the observed degradation of the front-side. From TEM and EDX measurements, it seems that the degradation at the cell level is predominantly caused by diffusion of sodium into the cell, which is triggered by humidity and low encapsulant resistivity. Assuming that the Na is also accumulated at the rear-side of the cell, this would create defects at the p-n junction, leading to the loss of FF observed.","PeriodicalId":6788,"journal":{"name":"2021 IEEE 48th Photovoltaic Specialists Conference (PVSC)","volume":"1 1","pages":"2032-2036"},"PeriodicalIF":0.0,"publicationDate":"2021-06-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"83026187","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 2

Optical and Electrical Properties of ITO Coated Willow Glass for Upscaling Perovskite Solar Cell Manufacturing Using Photonic Curing ITO涂层柳树玻璃的光学和电学性能，用于光子固化升级钙钛矿太阳能电池的制造

2021 IEEE 48th Photovoltaic Specialists Conference (PVSC) Pub Date : 2021-06-20 DOI: 10.1109/PVSC43889.2021.9518965

Robert T. Piper, Weijie Xu, J. Hsu

引用次数: 1

Impact of device parameters on the performance of CSC based silicon tandem solar cells 器件参数对CSC基硅串联太阳能电池性能的影响

2021 IEEE 48th Photovoltaic Specialists Conference (PVSC) Pub Date : 2021-06-20 DOI: 10.1109/PVSC43889.2021.9518600

Shikha Marwaha, K. Ghosh

引用次数: 0

Transparent Buffer Layer for Back Surface Passivation in CdTe Photovoltaics CdTe光电器件背面钝化的透明缓冲层

2021 IEEE 48th Photovoltaic Specialists Conference (PVSC) Pub Date : 2021-06-20 DOI: 10.1109/PVSC43889.2021.9518531

Pascal M. Jundt, Ramesh Pandey, A. Munshi, J. Sites

引用次数: 0