CdTe光电器件背面钝化的透明缓冲层

Pascal M. Jundt, Ramesh Pandey, A. Munshi, J. Sites
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引用次数: 0

摘要

透明后缓冲层的实现对CdTe社区来说是一个重大的福音。本文的模拟显示,通过加入后缓冲液,超薄电池的性能有了实质性的提高,如果假设透明接触,超薄电池的双面性也很高。本项目旨在在CdSeTe/CdTe电池的背面沉积p型透明导电氧化物(TCO),以改善电池背面的能带弯曲和界面重组,最终实现高性能双面电池。四种这样的氧化物被溅射沉积,形成了一组功能性的双面电池。用后激发时间分辨光致发光(TRPL)评价后表面钝化效果。一些有前途的材料产生了> 2ns的后激发寿命,表明有效的钝化。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Transparent Buffer Layer for Back Surface Passivation in CdTe Photovoltaics
The realization of a transparent back buffer layer would be a significant boon for the CdTe community. Simulations presented here reveal a substantial performance increase in ultrathin cells through incorporation of a back buffer, as well as high bifaciality if transparent contacts are assumed. This project aims to deposit a p-type transparent conducting oxide (TCO) at the back of superstrate CdSeTe/CdTe cells to improve band bending and interface recombination at the rear of the cell, and ultimately to bring high performing bifacial cells to fruition. Four such oxides were sputter deposited to create a collection of functional bifacial cells. Back surface passivation was evaluated with rear-excitation time-resolved photoluminescence (TRPL). Several promising materials yielded rear-excitation lifetimes >2 ns, indicating effective passivation.
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