Journal of the Korean Physical Society最新文献_第3页

Exploring strontium-based chalcogenides for hydrogen storage applications: fundamentals of structural, photovoltaic, thermodynamic, and hydrogen storage properties using the GGA methodology 探索基于锶的硫族化合物的储氢应用：使用GGA方法的结构，光伏，热力学和储氢特性的基础

IF 0.9 4区物理与天体物理

Journal of the Korean Physical Society Pub Date : 2025-07-01 DOI: 10.1007/s40042-025-01417-3

Junaid Khan, Waqar Uddin, Faisal Nawab, Javaid Khan, Abdullah K. Alanazi, Rahaf Ajaj, Abdur Rauf, Hassan A. Hemeg

{"title":"Exploring strontium-based chalcogenides for hydrogen storage applications: fundamentals of structural, photovoltaic, thermodynamic, and hydrogen storage properties using the GGA methodology","authors":"Junaid Khan, Waqar Uddin, Faisal Nawab, Javaid Khan, Abdullah K. Alanazi, Rahaf Ajaj, Abdur Rauf, Hassan A. Hemeg","doi":"10.1007/s40042-025-01417-3","DOIUrl":"10.1007/s40042-025-01417-3","url":null,"abstract":"<div>In the present work, the physical properties and hydrogen storage capacity of Sr-based perovskites, XSrH3, where (X = N, Cl, and Mg), are investigated. Every compound has thermal stability and is dynamic in structure. For NSrH3, ClSrH3, and MgSrH3, the corresponding symmetry lattice parameters are 3.701 Å, 3.800 Å, and 3.7328 Å. All compounds exhibit thermodynamic stability, as indicated by the estimated negative formation energy. It has been discovered that Sr-based perovskite compounds exhibit dynamic stability through phonon dispersion analysis. They have been shown to be both mechanically and elastically stable using the mechanical elastic calculation. The bulk modulus, shear modulus, and Poisson’s ratio can all be found using the calculated acquired elastic constant. It was found that all substances are elastically anisotropic and brittle. The examination of the band gap reveals that both exhibit metallic behavior. All substances exhibit their highest levels of conductivity and absorption in the UV region of their optical characteristics.</div>","PeriodicalId":677,"journal":{"name":"Journal of the Korean Physical Society","volume":"87 4","pages":"365 - 377"},"PeriodicalIF":0.9,"publicationDate":"2025-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144843219","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

High-performance AlN/GaN/AlGaN-MOSHEMTs on SiC wafer: scaling and gate material innovations for upcoming radar and communication systems SiC晶圆上的高性能AlN/GaN/AlGaN-MOSHEMTs：未来雷达和通信系统的缩放和栅极材料创新

IF 0.9 4区物理与天体物理

Journal of the Korean Physical Society Pub Date : 2025-06-25 DOI: 10.1007/s40042-025-01415-5

Lavanya Repaka, J. Ajayan, Asisa Kumar Panigrahy, Sandip Bhattacharya, B. Mounika

{"title":"High-performance AlN/GaN/AlGaN-MOSHEMTs on SiC wafer: scaling and gate material innovations for upcoming radar and communication systems","authors":"Lavanya Repaka, J. Ajayan, Asisa Kumar Panigrahy, Sandip Bhattacharya, B. Mounika","doi":"10.1007/s40042-025-01415-5","DOIUrl":"10.1007/s40042-025-01415-5","url":null,"abstract":"<div>The DC/RF performance of a T-gate AlN/GaN heterojunction MOS-HEMT (AGMH) device on SiC substrate with a Hafnium-based high-k gate dielectric material is thoroughly and meticulously investigated in this article. The research investigation looks at how different gate lengths affect important device metrics, such as cut-off frequency (fT), intrinsic capacitances (CGD & CGS), GM (transconductance), and ID (drain current). The proposed AGMH device with LG of 40 nm, tb of 3 nm, tox of 3 nm, LGS of 250 nm, & LGD of 400 nm exhibited ID-max (maximum ID) of 2.221 A/mm, GM-peak (peak transconductance) of 505.5 mS/mm, & fT-max (maximum fT) of 256 GHz. The remarkable DC/RF performance results from strong carrier confinement & minimized leakage current (IDL) enabled by scaling down the device parameters. This makes them a desirable option for RF power electronics and microwave (µw) applications in future generations, with a great deal of room for performance and efficiency gains.</div>","PeriodicalId":677,"journal":{"name":"Journal of the Korean Physical Society","volume":"87 4","pages":"414 - 429"},"PeriodicalIF":0.9,"publicationDate":"2025-06-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144843265","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Data-driven small-signal modeling of AlGaN/InGaN/GaN high electron mobility transistor using multi-layered ensemble learning 基于多层集成学习的AlGaN/InGaN/GaN高电子迁移率晶体管的数据驱动小信号建模

IF 0.9 4区物理与天体物理

Journal of the Korean Physical Society Pub Date : 2025-06-17 DOI: 10.1007/s40042-025-01416-4

Neda Ahmad, Sonam Rewari, Vandana Nath

{"title":"Data-driven small-signal modeling of AlGaN/InGaN/GaN high electron mobility transistor using multi-layered ensemble learning","authors":"Neda Ahmad, Sonam Rewari, Vandana Nath","doi":"10.1007/s40042-025-01416-4","DOIUrl":"10.1007/s40042-025-01416-4","url":null,"abstract":"<div>In this work, for the first time, an ensembled machine learning-based Hybrid Stacking approach is presented for small-signal behavioral modeling of high electron mobility transistors (HEMT). The device under test (DUT) is AlGaN/InGaN/GaN HEMT on a silicon carbide (SiC) substrate characterized at frequencies up to 50 GHz under room temperature. The stacking model was developed and trained on technology computer-aided design (TCAD)-generated data using four input parameters. It focuses on representing the device’s input–output behavior without delving deeply into the underlying physics. It can handle complex, nonlinear relationships and provide insights into device performance across varying conditions. The model’s predicted and simulated S-parameters show excellent agreement across the entire frequency range. The model demonstrated exceptional accuracy in both interpolation and extrapolation tests, achieving a mean absolute error (MAE) of 3.55E(-)03, mean squared error (MSE) of 5.20E(-)5, and root mean square error (RMSE) of 5.298E(-)03. The R-squared and explained variance scores were approximately 0.99 and 0.998, respectively. By precisely capturing the dependability of S-parameters on bias points and operating conditions, the proposed methodology highlights its potential to reduce barriers to adopting machine learning techniques in semiconductor research. This approach enhances the understanding of GaN HEMT performance and encourages the exploration of advanced ML models for broader applications in device analysis and optimization.</div>","PeriodicalId":677,"journal":{"name":"Journal of the Korean Physical Society","volume":"87 3","pages":"319 - 329"},"PeriodicalIF":0.9,"publicationDate":"2025-06-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145144033","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Thermosolutal convection in a rotating Navier–Stokes–Voigt fluid saturating a porous medium under thermal non-equilibrium conditions 热非平衡条件下饱和多孔介质的旋转Navier-Stokes-Voigt流体中的热溶质对流

IF 0.9 4区物理与天体物理

Journal of the Korean Physical Society Pub Date : 2025-06-17 DOI: 10.1007/s40042-025-01409-3

Sweta Sharma, Sunil, Poonam Sharma

{"title":"Thermosolutal convection in a rotating Navier–Stokes–Voigt fluid saturating a porous medium under thermal non-equilibrium conditions","authors":"Sweta Sharma,  Sunil, Poonam Sharma","doi":"10.1007/s40042-025-01409-3","DOIUrl":"10.1007/s40042-025-01409-3","url":null,"abstract":"<div>This study investigates the effect of rotation on viscoelastic fluid convection using the Voigt model in a porous medium under thermal nonequilibrium conditions. The analysis considers three boundary conditions with different combinations of free and rigid surfaces. The Darcy–Brinkman model is used to characterize the porous medium, and the Coriolis term is incorporated into the momentum equation to account for rotational effects. A dual-temperature model represents thermal non-equilibrium. Stability analysis is performed using both nonlinear (energy method) and linear (normal mode) approaches. The formulated eigenvalue problems are solved using single-term Galerkin method, from which explicit expressions for the Rayleigh number are derived. The critical Rayleigh number is then obtained by minimizing these expressions with respect to the wavenumber. The results establish stability thresholds and identify the key factors influencing the onset of both stationary and oscillatory convection. The global stability analysis confirms identical Rayleigh numbers for both approaches. Increasing the viscoelastic parameter (lambda) stabilizes oscillatory convection, leading to its disappearance beyond (lambda >1.3) (free–free), (lambda >0.26) (rigid–free), and (lambda >0.13) (rigid–rigid) boundary conditions, while keeping other parameters fixed, with a corresponding reduction in the wave number ranges.</div>","PeriodicalId":677,"journal":{"name":"Journal of the Korean Physical Society","volume":"87 4","pages":"350 - 364"},"PeriodicalIF":0.9,"publicationDate":"2025-06-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144843308","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Temperature of projectile fragment emission source in fragmentation of (^mathbf{40})Ar at 500 A MeV 500 A MeV下(^mathbf{40}) Ar破片中弹丸破片发射源温度

IF 0.9 4区物理与天体物理

Journal of the Korean Physical Society Pub Date : 2025-06-17 DOI: 10.1007/s40042-025-01411-9

Rong Li, Ying-Hua Dang, Jing-Xiao Kang, Jun-Sheng Li, Dong-Hai Zhang

引用次数: 0

Mechanism of IR assisted charge state conversion of nitrogen vacancy centre in diamond 红外辅助金刚石中氮空位中心电荷态转换的机理

IF 0.9 4区物理与天体物理

Journal of the Korean Physical Society Pub Date : 2025-06-17 DOI: 10.1007/s40042-025-01418-2

Nhu Anh Nguyen, Juil Hwang, Seunghyun Bang, Seonghyeon Kang, Hyunjong Lee, Kwang-Geol Lee, Sangwon Oh

{"title":"Mechanism of IR assisted charge state conversion of nitrogen vacancy centre in diamond","authors":"Nhu Anh Nguyen, Juil Hwang, Seunghyun Bang, Seonghyeon Kang, Hyunjong Lee, Kwang-Geol Lee, Sangwon Oh","doi":"10.1007/s40042-025-01418-2","DOIUrl":"10.1007/s40042-025-01418-2","url":null,"abstract":"<div>The negatively charged state of nitrogen vacancy centre (NV–) in diamond have been exploited in recent studies of magnetometry and quantum information processing. Nevertheless, the useful signal of NV– for these applications can be deteriorated by the neutrally charged state (NV0) which acts as backgrounds. In recent studies, it has been reported that simultaneous excitation of green (532 nm) laser combined with infrared (1030, 1040, 1064 nm) laser can enhance the emission from NV– while suppressing signal from NV0. Under such laser excitation conditions, however, the underlying mechanism of the photo-induced conversion between two charged states is still not fully understood. In our work, based on multi-photon absorption of IR, we propose a simple model to explain the mutual contribution of green and IR lasers to promote the NV– population. Our model recovers the detailed featured observed in our experiment, and also can reconcile the results in previous literatures.</div>","PeriodicalId":677,"journal":{"name":"Journal of the Korean Physical Society","volume":"87 4","pages":"341 - 349"},"PeriodicalIF":0.9,"publicationDate":"2025-06-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144843309","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Toxic gas adsorption on in-plane monolayer heterostructure of transition metal dichalcogenide: a first-principles study 过渡金属二硫化物平面内单层异质结构对有毒气体的吸附：第一性原理研究

IF 0.9 4区物理与天体物理

Journal of the Korean Physical Society Pub Date : 2025-06-17 DOI: 10.1007/s40042-025-01414-6

Vipin Kumar, Pushpendra Kumar, Gyanendra Kumar Maurya, Jin Seog Gwag

{"title":"Toxic gas adsorption on in-plane monolayer heterostructure of transition metal dichalcogenide: a first-principles study","authors":"Vipin Kumar, Pushpendra Kumar, Gyanendra Kumar Maurya, Jin Seog Gwag","doi":"10.1007/s40042-025-01414-6","DOIUrl":"10.1007/s40042-025-01414-6","url":null,"abstract":"<div>Heterostructure materials have gained significant research interest due to their distinct physical properties. Toxic gases severely affect the respiratory system of the human body. We propose an in-plane monolayer heterostructure based on transition metal dichalcogenides (TMD) to investigate the effect of toxic gas adsorption. The toxic gas molecules are adsorbed on top of the chalcogen-atom of the in-plane TMD heterostructure. The electronic structure calculations reflect that the band gap of the proposed host material remains almost unchanged upon the adsorption of gas molecules. The gas adsorption leads to the nearly unaltered valance band and conduction band. This is due to the lack of hybridization between the molecular orbitals of the adsorbate and the host material. The Mulliken population method confirms the charge transfer between the host in-plane TMD heterostructure and the adsorbed gas molecules. Furthermore, it is observed that the adsorption of gas molecules significantly changes the dielectric and optical response of the TMD in-plane heterostructure. Our investigations demonstrate that the proposed material has the potential for toxic gas sensing.</div>","PeriodicalId":677,"journal":{"name":"Journal of the Korean Physical Society","volume":"87 3","pages":"281 - 291"},"PeriodicalIF":0.9,"publicationDate":"2025-06-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145143831","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Enhanced weak value amplification via photon recycling 通过光子循环增强弱值放大

IF 0.9 4区物理与天体物理

Journal of the Korean Physical Society Pub Date : 2025-06-11 DOI: 10.1007/s40042-025-01401-x

Seung-Yeun Yoo, Dong-Gil Im, U-Shin Kim, Yosep Kim, Yoon-Ho Kim

引用次数: 0

Analysis of electric field in asymmetrically arranged dielectric media using simple mathematical methods 用简单的数学方法分析非对称排列介质中的电场

IF 0.9 4区物理与天体物理

Journal of the Korean Physical Society Pub Date : 2025-06-11 DOI: 10.1007/s40042-025-01412-8

In-Su Han

引用次数: 0

Improvement of dose uniformity using a backscatter plate in a single X-ray source for blood irradiator: Monte Carlo simulation approach 使用后向散射板改善单一x射线血液辐照源的剂量均匀性：蒙特卡罗模拟方法

IF 0.9 4区物理与天体物理

Journal of the Korean Physical Society Pub Date : 2025-06-11 DOI: 10.1007/s40042-025-01413-7

Dung Thi Tran, Minho Kim, Bong hwan Hong, Chawon Park, Seungwoo Park

{"title":"Improvement of dose uniformity using a backscatter plate in a single X-ray source for blood irradiator: Monte Carlo simulation approach","authors":"Dung Thi Tran, Minho Kim, Bong hwan Hong, Chawon Park, Seungwoo Park","doi":"10.1007/s40042-025-01413-7","DOIUrl":"10.1007/s40042-025-01413-7","url":null,"abstract":"<div>X-ray irradiators are used to inactivate T-cell function to prevent the risk of transfusion-associated graft-versus-host disease (TA-GVHD). Absorbed dose of 25–50 Gy within 5 min with a dose uniformity ratio (DUR) below 1.5 are recommended for inactivating T cells while sparing other blood components. In this study, different backscatter plate materials were utilized to improve dose uniformity within the entire blood phantom for a single X-ray blood irradiator using Monte Carlo simulation (MCNP6). Based on the simulation results, Be, acrylic, and Al were selected as backscatter plates for their high backscatter ratios. Dose uniformity across the entire blood phantom improved by 29.56%, 21.43%, and 10.44% when using 10 cm Be, 10 cm acrylic, and 4 cm Al as backscatter plates, respectively. Using a backscatter plate improved dose uniformity across the entire blood phantom hence improving blood irradiation efficiency. However, DUR exceeding 1.5 is due to substantial dose difference between the surface and bottom regions of the blood phantom. In future studies, additional filters will be explored to improve DUR and achieve the recommended value.</div>","PeriodicalId":677,"journal":{"name":"Journal of the Korean Physical Society","volume":"87 3","pages":"299 - 309"},"PeriodicalIF":0.9,"publicationDate":"2025-06-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145143095","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0