Journal of the Korean Physical Society最新文献

{"title":"Optimization of ozone generator sizing and performance using response surface modeling and metaheuristic algorithms: a comparative study of HLOA and LCA","authors":"Elmabrouk Khelifi,&nbsp;Mohammed Nadjib Brahami,&nbsp;Imen Souhila Bousmaha,&nbsp;Mostefa Brahami,&nbsp;Said Nemmich,&nbsp;Seyf Eddine Bechekir,&nbsp;Mokhtaria Jbilou,&nbsp;Meriem Belabed","doi":"10.1007/s40042-025-01302-z","DOIUrl":"10.1007/s40042-025-01302-z","url":null,"abstract":"<div><p>This study investigates the optimization of a dielectric barrier discharge (DBD) cylindrical-shaped ozone generator, crucial for air purification and water treatment. The research focuses on the effects of voltage, electrode length, and discharge gap on ozone concentration, ozone generation rate, and energy efficiency, aiming to enhance performance while minimizing energy consumption. Systematic experiments were conducted by varying generator parameters at the APELEC Laboratory, Djillali Liabes University of Sidi-Bel-Abbes, Algeria, yielding a peak ozone concentration of 53.32 mg/L and an energy efficiency of 5.82 g/Wh. To enhance understanding and performance, response surface modeling (RSM) was employed to develop a mathematical model that elucidates the relationships between performance metrics and generator parameters. This model facilitated the identification of optimal parameter combinations to maximize ozone concentration and efficiency. In a novel approach, two advanced metaheuristic algorithms the liver cancer algorithm (LCA) and the horned lizard optimization algorithm (HLOA) were utilized. The HLOA achieved an improved ozone concentration of 57.35 mg/L and an energy efficiency of 5.88 g/Wh, surpassing the LCA’s results of 56.9 mg/L and 5.76 g/Wh. The results provide valuable insights for enhancing ozone generators, demonstrating the effectiveness of combining RSM with metaheuristic approaches. This hybrid method not only clarifies parameter relationships but also establishes a new benchmark for future research in ozone generator optimization.</p></div>","PeriodicalId":677,"journal":{"name":"Journal of the Korean Physical Society","volume":"86 9","pages":"856 - 874"},"PeriodicalIF":0.8,"publicationDate":"2025-03-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143896748","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Rigorous modeling of stimulated Brillouin scattering-induced rogue waves in a high-power fiber amplifier","authors":"Byung Ho Kim,&nbsp;Kyoungyoon Park,&nbsp;Yoonchan Jeong","doi":"10.1007/s40042-025-01342-5","DOIUrl":"10.1007/s40042-025-01342-5","url":null,"abstract":"<div><p>Stimulated Brillouin scattering (SBS) is considered to be a huge limiting factor in the power scaling of a narrow-linewidth high-power fiber amplifier source. An in-depth comprehensive study on this matter is of great importance because the generation of a temporarily strong rogue wave (RW) in the gain fiber can give rise to catastrophic damage to the key components of the fiber amplifier source. Since the center frequency of SBS is sensitive to temperature, in this paper, we extensively model and investigate its spatio-temporal behaviors by constructing a set of generalized coupled equations between the optical and acoustic waves together with the transient analysis of the corresponding thermal effect along the fiber length, depending on two different strategies in terms of the way of the pump power increase. When the pump power was turned on slowly in a multi-step manner, it could diminish the peak power level of SBS-induced RWs by a factor of almost two relative to that of SBS-induced RWs formed when the pump power was turned on immediately in a single-step manner. The outcome of this study will be useful and helpful in analyzing and designing narrow-linewidth high-power fiber amplifier as well as investigating their thermal management.</p></div>","PeriodicalId":677,"journal":{"name":"Journal of the Korean Physical Society","volume":"86 9","pages":"834 - 846"},"PeriodicalIF":0.8,"publicationDate":"2025-03-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143896763","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Optoelectronics and thermoelectric response of halide-based perovskites CsXY3 (X = Sn and Pb; Y = Cl, Br and I) semiconductors for solar cells and renewable energy","authors":"Hayat Ullah,&nbsp;Zertasha Nazir,&nbsp;Ashfaq Ahmad,&nbsp;Muhammad Mushtaq,&nbsp;Khalid M. Alotaibi,&nbsp;Kashif Safeen,&nbsp;Akif Safeen","doi":"10.1007/s40042-025-01344-3","DOIUrl":"10.1007/s40042-025-01344-3","url":null,"abstract":"<div><p>The aim of this research paper is designed to explore a systematic comparison of structural, elastic, thermal, electronic, optical, and thermoelectric responses of halide-based cubic perovskites CsXY₃(X = Sn and Pb; Y = Cl, Br and I) semiconductors for their potential applications in optoelectronic and thermoelectric generators. Density functional theory (DFT) is used in the present work using first-principle calculations based on the full potential linearized augmented plane wave (FP-LAPW) method with WC-GGA and mBJ as exchange correlation potentials. Moreover, the thermoelectric properties of these compounds are also explored using the BoltzTrap code. The calculated structural parameters are consistent with previous experimental and theoretical results. Bulk modulus and ground-state energy decrease in both groups from Cl to I. Elastic properties show the ductile nature of these compounds except CsSnI₃. Electronic properties show that these compounds are semiconductor with direct band gap of 1.9 eV for CsPbCl₃, 1.6 eV for CsPbBr₃, 1.3 eV for CsPbI₃, 0.8 eV for CsSnCl₃, 0.4 eV for CsSnBr₃, and 0.15 eV for CsSnI₃ respectively. Optical properties like dielectric constant, refractive index, and optical conductivity, and absorption coefficients are calculated up to photon energy of 25 eV. The fluctuation of Seebeck coefficient S, electrical conductivity (σ/τ), electronic thermal conductivity (κ/τ), and thermoelectric power factor PF with respect to temperature is also studied. A comprehensive analysis of the optoelectronics and thermoelectric nature with a given band gaps was carried out, reflecting the uses of CsXY₃ (X = Sn and Pb Y = Cl, Br and I) compounds in optoelectronic and thermoelectric generators. Moreover, the super luminescent nature at high photon energy and the strong absorption in the infrared, visible, and ultraviolet energy ranges were also explored in details.</p></div>","PeriodicalId":677,"journal":{"name":"Journal of the Korean Physical Society","volume":"86 9","pages":"892 - 908"},"PeriodicalIF":0.8,"publicationDate":"2025-03-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143896761","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Synthesis of multilayer graphene on an atomically thin SiON layer grown on a SiC substrate","authors":"Beom Ju Kim,&nbsp;Jin Wook Kim,&nbsp;Kyu Hwa Choi,&nbsp;Gun Woo Park,&nbsp;Seing Hyum Im,&nbsp;Do Hyun Kim,&nbsp;Sung Hoo Sin,&nbsp;Do Hee Lee,&nbsp;Jun-Hui Choi,&nbsp;Jae-Hyun Lee,&nbsp;Joung Real Ahn","doi":"10.1007/s40042-025-01348-z","DOIUrl":"10.1007/s40042-025-01348-z","url":null,"abstract":"<div><p>Multilayer graphene was synthesized on an atomically thin silicon oxynitride (SiON) layer. This SiON layer was itself grown on a SiC(0001) wafer. The number of graphene layers was approximately controlled through the manipulation of argon partial pressure and exposure time. Both SiC and Si wafers are standard and commercially available substrates in the semiconductor industry, underscoring the importance of growing graphene layers on these wafers without the need for a transfer process. The multilayer graphene’s characteristics were examined using Raman spectroscopy, with the number of layers determined by the ratios of the 2D and G peaks in the Raman spectra. The uniformity of the graphene layers was assessed using confocal Raman mapping. This method of directly growing multilayer graphene on SiON/SiC wafers can also be extended to other two-dimensional materials such as h-BN and MoS₂.</p></div>","PeriodicalId":677,"journal":{"name":"Journal of the Korean Physical Society","volume":"86 9","pages":"819 - 826"},"PeriodicalIF":0.8,"publicationDate":"2025-03-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://link.springer.com/content/pdf/10.1007/s40042-025-01348-z.pdf","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143896747","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Theory of two-dimensional surface polaritons and their propagation","authors":"Seojoo Lee,&nbsp;Ji-Hun Kang","doi":"10.1007/s40042-025-01343-4","DOIUrl":"10.1007/s40042-025-01343-4","url":null,"abstract":"<div><p>In this paper, we provide a theoretical description of the propagation of surface polaritons bound to a two-dimensional (2D) metallic plane. Specifically, we rigorously discuss how orthonormal eigenvectors for the space including the 2D plane can be obtained. These eigenvectors are shown to consist of a unique surface-bound mode, corresponding to the 2D surface polaritons (2DSPs), along with a continuum of unbound modes, referred to as radiation modes. We demonstrate that although the radiation modes do not directly characterize the propagation of the 2DSPs, they play an important role in manipulating the propagation of 2DSPs.</p></div>","PeriodicalId":677,"journal":{"name":"Journal of the Korean Physical Society","volume":"86 9","pages":"827 - 833"},"PeriodicalIF":0.8,"publicationDate":"2025-03-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143896751","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Dust-ion-acoustic solitary and shock waves in a multi-ion dusty plasma with Kaniadakis distributed nonthermal electrons","authors":"O. Rahman","doi":"10.1007/s40042-025-01320-x","DOIUrl":"10.1007/s40042-025-01320-x","url":null,"abstract":"<div><p>An investigation has been carried out to study the basic properties of dust-ion-acoustic (DIA) solitary and shock waves associated with an electronegative dusty plasma system consisting of Kaniadakis distributed nonthermal cometary electrons, inertial positive and negative Oxygen ions, and arbitrarily charged stationary dust particles. A set of hydrodynamic equations is used to derive the Korteweg–de Vries (K-dV) and modified K-dV equations involving the DIA solitary waves in the framework of the reductive perturbation technique. Furthermore, the shock wave excitations are also investigated considering the kinematic viscous forces acting on the positive and negative ion fluids by deriving the K-dV Burger and modified K-dV Burger equations. It is seen that the presence of the considered plasma parameters significantly modifies the basic features of these waves.</p></div>","PeriodicalId":677,"journal":{"name":"Journal of the Korean Physical Society","volume":"86 9","pages":"847 - 855"},"PeriodicalIF":0.8,"publicationDate":"2025-03-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143896752","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Fermi level pinning mitigation in GaN Schottky contacts via UV/O3-treated interfaces","authors":"Goeun Ham,&nbsp;Sumin Suk,&nbsp;Kwangeun Kim","doi":"10.1007/s40042-025-01335-4","DOIUrl":"10.1007/s40042-025-01335-4","url":null,"abstract":"<div><p>GaN has recently emerged as a prominent material for power electronics due to its wide bandgap properties. However, challenges related to interface states at metal/GaN junction cause deviations in device characteristics such as leakage current and breakdown voltage. The interface defects induce Fermi level pinning (FLP) at the metal–GaN interface and significantly affect the electrical performance of devices. In this study, we investigated the impact of ultraviolet/ozone (UV/O₃) treatment on the interface characteristics of metal/GaN junctions, by mitigating FLP phenomenon. The electrical properties of the samples were analyzed after applying UV/O₃ treatment to the GaN surface, followed by the separate deposition of Pt and Ni. Through I–V and C–V curves analysis, we observed a reduction in leakage current along with changes in breakdown voltages and Schottky barrier heights. Our findings demonstrate that the oxide layer formed through the UV/O₃ treatment enhances the interface passivation, reducing defect states and improving device performance. This work provides insights into controlling the properties at the metal–GaN interfaces and elucidating the mechanism of mitigating FLP.</p></div>","PeriodicalId":677,"journal":{"name":"Journal of the Korean Physical Society","volume":"86 9","pages":"918 - 923"},"PeriodicalIF":0.8,"publicationDate":"2025-03-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143896764","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Development of a system for on-site dosimetry audit of high-dose-rate brachytherapy","authors":"Hyeok-Jun Gwon,&nbsp;Wonho Lee,&nbsp;Sang-Hyoun Choi,&nbsp;Gyu-Seok Cho,&nbsp;Soon Sung Lee,&nbsp;Sun-Boong Hwang,&nbsp;Kum Bae Kim","doi":"10.1007/s40042-025-01331-8","DOIUrl":"10.1007/s40042-025-01331-8","url":null,"abstract":"<div><p>Despite international standards, the lack of an independent audit system in South Korea has led to quality management challenges in high-dose-rate brachytherapy, prompting the development of a precise source activity measurement system and a regulatory MATLAB code. We developed an audit system that integrates a source strength measurement system and mechanical accuracy check phantoms using a well-type chamber electrometer setup and an in-house MATLAB code. We achieved audit suitability with appropriate uncertainty and compatibility across various Remote After-Loading System (RALS). Our uncertainty assessments revealed the proposed expanded uncertainties (<i>k</i> = 2) of 2.72% and 2.71% for models 70010 and 72280, respectively. Based on these results, we plan to implement this auditing system nationwide to comply with domestic regulations.</p></div>","PeriodicalId":677,"journal":{"name":"Journal of the Korean Physical Society","volume":"86 9","pages":"909 - 917"},"PeriodicalIF":0.8,"publicationDate":"2025-03-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143896762","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Diamond nucleation behavior influenced by pretreatment on 4H-SiC substrates","authors":"Mee-Hi Choi,&nbsp;Ki-Yeol Woo,&nbsp;Soon-Ku Hong,&nbsp;Seong-Min Jeong,&nbsp;Hee-Soo Lee,&nbsp;Yun-Ji Shin","doi":"10.1007/s40042-024-01282-6","DOIUrl":"10.1007/s40042-024-01282-6","url":null,"abstract":"<div><p>In this study, we investigated the nucleation and growth behavior of diamond on 4H-SiC Si-face and C-face substrates using the microwave plasma chemical vapor deposition (MPCVD) method, following ultrasonic surface pretreatment. A mixture of diamond powder and ethanol was utilized during the pretreatment, and the nucleation characteristics were analyzed by varying the pretreatment time (30, 60, and 90 min). The results revealed that diamond nucleation density and mechanism were strongly influenced by the surface orientation and pretreatment duration. On the Si-face (0001), nucleation initially followed an island-growth mode but became more uniform with increased pretreatment time, resulting in enhanced nucleation density and reduced grain size. Conversely, the C-face (000–1) achieved uniform nucleation at shorter pretreatment durations (30 min), but prolonged pretreatment led to grain overgrowth and a reduction in nucleation density. TEM analysis showed a rough and non-uniform SiC–diamond interface on the Si-face, attributed to thermal expansion mismatch and residual tensile stress. In contrast, the C-face exhibited a smoother and more uniform interface structure without intermediate layers. These findings highlight the critical role of substrate polarity and optimized pretreatment conditions in achieving high-quality diamond nucleation and growth on 4H-SiC substrates.</p></div>","PeriodicalId":677,"journal":{"name":"Journal of the Korean Physical Society","volume":"86 9","pages":"884 - 891"},"PeriodicalIF":0.8,"publicationDate":"2025-03-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143896750","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Investigation of phase transition in self-flux grown VO2 single crystals","authors":"Yeong Uk Choi,&nbsp;Joo Chan Kim,&nbsp;Jong Hun Kim,&nbsp;Jong Hoon Jung","doi":"10.1007/s40042-025-01330-9","DOIUrl":"10.1007/s40042-025-01330-9","url":null,"abstract":"<div><p>We report the growth and phase transition of VO₂ single crystals. Millimeter-sized VO₂ single crystals were obtained by a self-flux method, in which the molten phase of V₂O₅ at 1000 °C was slowly cooled to room temperature at a rate of 5 °C/h. Rietveld analysis of X-ray powder diffraction shows a low-temperature monoclinic structure with the V–V dimer spacings of 2.57 Å and 3.20 Å and a high-temperature rutile structure with the V–V spacing of 2.85 Å. Raman scattering measurement suggests that the VO₂ single crystal is highly stoichiometric with negligible oxygen deficiency. Electrical resistivity, magnetic susceptibility, specific heat, and heat flow measurements show drastic changes during heating (~ 338 K) and cooling (~ 334 K) with a narrow temperature range (~ 1 K). The low-temperature insulating phase with negligible magnetic susceptibility changes to a high-temperature metallic phase with Pauli paramagnetic susceptibility. The enthalpy change during the phase transition was estimated to be ~ 87 J/g by specific heat and differential calorimetry measurements. This work provides useful quantitative information for the phase transition of VO₂ single crystals.</p></div>","PeriodicalId":677,"journal":{"name":"Journal of the Korean Physical Society","volume":"86 8","pages":"800 - 805"},"PeriodicalIF":0.8,"publicationDate":"2025-03-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143840377","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}