Journal of the Korean Physical Society最新文献_第2页

Can a naked singularity be formed during the gravitational collapse of a Janis-Newman-Winicour solution? 在Janis-Newman-Winicour解的引力坍缩过程中，裸奇点能形成吗？

IF 0.9 4区物理与天体物理

Journal of the Korean Physical Society Pub Date : 2025-07-08 DOI: 10.1007/s40042-025-01425-3

Xiao Yan Chew, Il Gyeong Choi, Hyuk Jung Kim, Dong-han Yeom

引用次数: 0

Erratum: Beam dynamics for RAON linac and beam lines 勘误：RAON直线和束流线的束流动力学

IF 0.9 4区物理与天体物理

Journal of the Korean Physical Society Pub Date : 2025-07-08 DOI: 10.1007/s40042-025-01433-3

Ji-Ho Jang, Dong-O Jeon, Hyunchang Jin, Hyung-Jin Kim

引用次数: 0

Synaptic devices based on flash memory using quantum dots 突触装置基于使用量子点的闪存

IF 0.9 4区物理与天体物理

Journal of the Korean Physical Society Pub Date : 2025-07-04 DOI: 10.1007/s40042-025-01419-1

Jisoo Choi, Soyeon Jeong, Jeongmok Yang, Jaemin Kim, Moongyu Jang

{"title":"Synaptic devices based on flash memory using quantum dots","authors":"Jisoo Choi, Soyeon Jeong, Jeongmok Yang, Jaemin Kim, Moongyu Jang","doi":"10.1007/s40042-025-01419-1","DOIUrl":"10.1007/s40042-025-01419-1","url":null,"abstract":"<div><p>Neurons in the human brain exchange signals with each other through synapses, synapses transmit neurons’ information and represent various associations. In this study, the devices using quantum dots (QDs) were fabricated and presented as a synaptic mimic device. A programming/erasing process was performed to insert or remove electrons from the quantum dots by applying a gate voltage to the electrode of the device having a stack structure of Pt/Cr/Al<sub>2</sub>O<sub>3</sub>/QDs/Al<sub>2</sub>O<sub>3</sub>/SiO<sub>2</sub>/Si. To use as a synaptic mimetic devices, analog characteristics that can express various levels of connection strength, repeatability, reproducibility, and retention are required. Therefore, the number of electrons stored in the quantum dots was adjusted by changing the applied voltage and time, and the synaptic characteristics of the device in various stages were confirmed. The state of the device was expressed through the flatband voltage shift by measuring the capacitance–voltage characteristic curves. In addition, it was observed that the device continued to operate when programming/erasing was repeated, and it was confirmed that the device’s state was maintained over time. </p></div>","PeriodicalId":677,"journal":{"name":"Journal of the Korean Physical Society","volume":"87 4","pages":"400 - 413"},"PeriodicalIF":0.9,"publicationDate":"2025-07-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144843234","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Obliquely propagating gravito-nucleus acoustic waves in astrophysical degenerate quantum plasmas 天体物理简并量子等离子体中斜传播的重力核声波

IF 0.9 4区物理与天体物理

Journal of the Korean Physical Society Pub Date : 2025-07-04 DOI: 10.1007/s40042-025-01426-2

M. Asaduzzaman

引用次数: 0

IF 0.9 4区物理与天体物理

Journal of the Korean Physical Society Pub Date : 2025-07-01

引用次数: 0

Head-on collisions of fuzzy/cold dark matter subhalos 模糊/冷暗物质亚晕的正面碰撞

IF 0.9 4区物理与天体物理

Journal of the Korean Physical Society Pub Date : 2025-07-01 DOI: 10.1007/s40042-025-01420-8

Hyeonmo Koo

引用次数: 0

Erratum: Superconducting cavities for SCL3 勘误：超导腔的SCL3

IF 0.9 4区物理与天体物理

Journal of the Korean Physical Society Pub Date : 2025-07-01 DOI: 10.1007/s40042-025-01429-z

Heetae Kim, Sungmin Jeon, Juwan Kim, Junwoo Lee, Moosang Kim, Jongdae Joo, Myung Ook Hyun, Hoe Chun Jung, Hyojae Jang, Youngkwon Kim, Gunn-Tae Park, Mijoung Joung, Yoochul Jung

引用次数: 0

Crystallinity and optical properties of post-annealed Ga2O3 thin films deposited under varying oxygen partial pressures 不同氧分压下退火后Ga2O3薄膜的结晶度和光学性质

IF 0.9 4区物理与天体物理

Journal of the Korean Physical Society Pub Date : 2025-07-01 DOI: 10.1007/s40042-025-01423-5

Tae Jong Hwang, Jong Su Kim

{"title":"Crystallinity and optical properties of post-annealed Ga2O3 thin films deposited under varying oxygen partial pressures","authors":"Tae Jong Hwang, Jong Su Kim","doi":"10.1007/s40042-025-01423-5","DOIUrl":"10.1007/s40042-025-01423-5","url":null,"abstract":"<div><p>Amorphous Ga₂O₃ thin films were deposited on c-plane sapphire substrates by RF magnetron sputtering under varying oxygen partial pressures and crystallized into the monoclinic β-phase via post-annealing at 1000 °C in an oxygen atmosphere. Atomic force microscopy revealed that films grown under low oxygen conditions exhibited surface cracks, while those deposited at higher oxygen pressures showed smooth, crack-free surfaces. Raman spectroscopy showed a progressive increase in the intensities of Ga–O vibrational modes around 200 and 415 cm⁻<sup>1</sup> with increasing oxygen partial pressure, indicating enhanced structural ordering. Optical transmittance measurements revealed a non-linear change in bandgap energy from 4.8 to 4.95 eV, likely due to variations in defect concentration and stoichiometry. The refractive index remained nearly constant at ~ 1.76, suggesting low film density or structural inhomogeneity. These results suggest that β-Ga₂O₃ thin films fabricated under different oxygen partial pressures may still exhibit variations in microstructure and optical properties even after post-annealing.</p></div>","PeriodicalId":677,"journal":{"name":"Journal of the Korean Physical Society","volume":"87 4","pages":"386 - 393"},"PeriodicalIF":0.9,"publicationDate":"2025-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145160763","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Thermomechanical modeling of bubble migration under local laser heating in van der Waals heterostructures 范德华异质结构局部激光加热下气泡迁移的热力学模拟

IF 0.9 4区物理与天体物理

Journal of the Korean Physical Society Pub Date : 2025-07-01 DOI: 10.1007/s40042-025-01430-6

Soobeom Choi, Hyejeong Jeong, ChanSoo Kim, Hyungkook Choi, Myunglae Jo

{"title":"Thermomechanical modeling of bubble migration under local laser heating in van der Waals heterostructures","authors":"Soobeom Choi, Hyejeong Jeong, ChanSoo Kim, Hyungkook Choi, Myunglae Jo","doi":"10.1007/s40042-025-01430-6","DOIUrl":"10.1007/s40042-025-01430-6","url":null,"abstract":"<div><p>Trapped interfacial bubbles in van der Waals (vdW) heterostructures degrade electronic performance but also present opportunities for local strain engineering. We develop a comprehensive thermomechanical model to investigate how localized continuous-wave (CW) laser heating can be used to manipulate such bubbles in hBN/graphene/hBN stacks. By integrating finite-difference heat conduction simulations with analytical models of bubble energetics, we quantify laser-induced temperature distributions and the conditions required for bubble migration. Our model incorporates optical absorption in both the encapsulated 2D layers and silicon substrate, vertical and lateral heat spreading, and interfacial thermal resistance. A temperature-based criterion for bubble migration is derived from the energy balance between internal pressure buildup and adhesion-limited motion. We show that focused laser power (40 mW) can raise local temperatures to 800 K, sufficient to overcome adhesion barriers for bubbles above a critical size. Notably, our analysis reveals that while the migration direction depends on a competition between internal pressure and adhesion energy gradients, the temperature dependence of adhesion typically dominates, driving bubbles toward colder regions under realistic conditions. These results offer a predictive framework for optothermal interface engineering, enabling spatially controlled bubble removal, cleanliness enhancement, and programmable strain in 2D material devices.</p></div>","PeriodicalId":677,"journal":{"name":"Journal of the Korean Physical Society","volume":"87 4","pages":"378 - 385"},"PeriodicalIF":0.9,"publicationDate":"2025-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144843220","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Electric-field-driven subsurface atomic migration in van der Waals bilayer (textrm{Ta}_{2}textrm{NiSe}_{5}) via scanning tunneling microscopy 范德华双层中电场驱动的地下原子迁移(textrm{Ta}_{2}textrm{NiSe}_{5})扫描隧道显微镜

IF 0.9 4区物理与天体物理

Journal of the Korean Physical Society Pub Date : 2025-07-01 DOI: 10.1007/s40042-025-01428-0

Dowook Kim, So Young Kim, Jun Sung Kim, Tae-Hwan Kim

{"title":"Electric-field-driven subsurface atomic migration in van der Waals bilayer (textrm{Ta}_{2}textrm{NiSe}_{5}) via scanning tunneling microscopy","authors":"Dowook Kim, So Young Kim, Jun Sung Kim, Tae-Hwan Kim","doi":"10.1007/s40042-025-01428-0","DOIUrl":"10.1007/s40042-025-01428-0","url":null,"abstract":"<div><p>We demonstrate that strong local electric fields generated by a scanning tunneling microscope (STM) tip induce nanoscale structural modifications beneath the surface of bilayer <span>(textrm{Ta}_{2}textrm{NiSe}_{5})</span>. Applying voltage pulses with a positive sample bias leads to the formation of depressions at the pulse sites and protrusions at laterally displaced locations along the crystal’s chain direction. Bias-dependent STM imaging and scanning tunneling spectroscopy reveal no measurable change in the surface electronic structure, indicating that the observed height variations originate from structural, rather than electronic, effects. We propose that the electric field drives anisotropic atomic migration within the van der Waals gap, resulting in reversible and directional reconfiguration of subsurface layers. Sequential pulsing further confirms the dynamic nature of this process, allowing local depressions and protrusions to be erased or repositioned. Our findings introduce a mechanism for electric-field-induced subsurface patterning in layered materials, with potential applications in reconfigurable nanoscale devices in van der Waals materials.</p></div>","PeriodicalId":677,"journal":{"name":"Journal of the Korean Physical Society","volume":"87 4","pages":"394 - 399"},"PeriodicalIF":0.9,"publicationDate":"2025-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144843202","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0