2020 IEEE 10th International Conference Nanomaterials: Applications & Properties (NAP)最新文献_第7页

The Effect of Al Doping on Structure and Optical Properties of ZnO Thin Films Al掺杂对ZnO薄膜结构和光学性能的影响

2020 IEEE 10th International Conference Nanomaterials: Applications & Properties (NAP) Pub Date : 2020-11-09 DOI: 10.1109/NAP51477.2020.9309525

S. Najim, A. M. Muhammed, A. Pogrebnjak

引用次数: 0

Thermopower of Nanocarbon Material Containing Multiwall Carbon Nanotubes with Imperfect Structure 结构不完美的多壁碳纳米管纳米碳材料的热学性能

2020 IEEE 10th International Conference Nanomaterials: Applications & Properties (NAP) Pub Date : 2020-11-09 DOI: 10.1109/NAP51477.2020.9309629

I. Ovsiienko, T. L. Tsaregradskaya, T. Len, L. Matsui, G. V. Saenko, V. Heraskevych

引用次数: 0

The Influence of an Average Distance Between Particles into the Dynamic Destruction of Nano Suspensions 粒子间平均距离对纳米悬浮液动态破坏的影响

2020 IEEE 10th International Conference Nanomaterials: Applications & Properties (NAP) Pub Date : 2020-11-09 DOI: 10.1109/NAP51477.2020.9309551

O. Kuzma

引用次数: 0

Investigation of the Printing Parameters Influence on the Bond Lines Length in Fused Filament Fabrication 熔丝加工中打印参数对键合线长度影响的研究

2020 IEEE 10th International Conference Nanomaterials: Applications & Properties (NAP) Pub Date : 2020-11-09 DOI: 10.1109/NAP51477.2020.9309668

Larysa Hurina, Y. Vyshnepolskyi, D. Pavlenko, D. Stepanov

{"title":"Investigation of the Printing Parameters Influence on the Bond Lines Length in Fused Filament Fabrication","authors":"Larysa Hurina, Y. Vyshnepolskyi, D. Pavlenko, D. Stepanov","doi":"10.1109/NAP51477.2020.9309668","DOIUrl":"https://doi.org/10.1109/NAP51477.2020.9309668","url":null,"abstract":"The study results of the cross sectional profile geometry of extruded strand in fused filament fabrication (FFF) were presented. It was obtained that the plane characterized by the shortest time of deposition of two layers represented the longest contact lines between them. It was established that the length of contact line between the layers was different in the early and late stages of deposition. The length of the lines was influenced by heat transfer between adjacent strands. The length of the intra-layer lines increased with increasing printing speed due to the acceleration of diffusion processes from additional heating during deposition of the next layer. The rational printing speed was 20 $mm/s$. The relationship between the accuracy of printed layer and value of extrusion multiplier was established. As it increased, porosity of layer decreased, but the accuracy of material deposition significantly deteriorated. The rational value of extrusion multiplier was 1, in this case minimum porosity was obtained with sufficient printing accuracy.","PeriodicalId":6770,"journal":{"name":"2020 IEEE 10th International Conference Nanomaterials: Applications & Properties (NAP)","volume":"3586 1","pages":"02SAMA07-1-02SAMA07-5"},"PeriodicalIF":0.0,"publicationDate":"2020-11-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"86669516","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Performance Enhancement of Ge/GaAs Heterostructure Tunnelling Field Effect Transistor Ge/GaAs异质结构隧穿场效应晶体管的性能增强

2020 IEEE 10th International Conference Nanomaterials: Applications & Properties (NAP) Pub Date : 2020-11-09 DOI: 10.1109/NAP51477.2020.9309590

Mohammed Farhan Jawad, Tasnim Rahman, J. K. Saha

{"title":"Performance Enhancement of Ge/GaAs Heterostructure Tunnelling Field Effect Transistor","authors":"Mohammed Farhan Jawad, Tasnim Rahman, J. K. Saha","doi":"10.1109/NAP51477.2020.9309590","DOIUrl":"https://doi.org/10.1109/NAP51477.2020.9309590","url":null,"abstract":"Tunnelling Field Effect Transistor (TFET) is an emerging alternative to Metal Oxide Semiconductor Field Effect Transistor (MOSFET) in device technology as the latter struggles with scaling down effects. But, low on-state current and abrupt doping profile are the limitations of TFET. However, Junctionless Tunnelling Field Effect Transistor (JLTFET) has solved this doping problem by uniformly doping all the regions. A higher tunneling barrier causes the low on-state current, and that is still a limitation of the JLTFET. Our study aims to reduce the tunneling barrier to have a higher on-sate current using Ge/GaAs Heterostructure Junctionless Tunnelling Field Effect Transistor (H-JLTFET) and enhance the overall performance of this H-JLTFET by analyzing different device parameters, such as channel thickness, oxide thickness, and doping concentration. The Non-Local Band to Band Tunnelling (BTBT) model was employed to achieve a realistic tunneling mechanism in our device using TCAD. Our proposed device provides a high on-state current of 7.68e-5 A/um, a low off-state current of 7.4e-17 A/um, nearly an ideal subthreshold swing of 5.73 mV/decade. Finally, this work concludes with a comparative study between our optimized device and other published similar TFET. The analysis shows that our device provides a significant improvement in performance, which could be very promising for the emerging low-power, high-speed VLSI technology.","PeriodicalId":6770,"journal":{"name":"2020 IEEE 10th International Conference Nanomaterials: Applications & Properties (NAP)","volume":"9 1","pages":"01TPNS02-1-01TPNS02-5"},"PeriodicalIF":0.0,"publicationDate":"2020-11-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"85261814","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Tuning Optical Properties of AgInS2 Quantum Dots by the Change of Ag-In Stoichiometry for their Light-emitting Applications 通过改变银银化学计量来调整AgInS2量子点的光学性质，以实现其发光应用

2020 IEEE 10th International Conference Nanomaterials: Applications & Properties (NAP) Pub Date : 2020-11-09 DOI: 10.1109/NAP51477.2020.9309659

N. Doskaliuk, Y. Babyuk, Andrii H. Hotynchan, G. Okrepka, Y. Khalavka

引用次数: 0

Investigation of Morphology and Composition of the Mineral Fertilizer Granules with Nanostructured Areas 具有纳米结构区的矿肥颗粒的形貌和组成研究

2020 IEEE 10th International Conference Nanomaterials: Applications & Properties (NAP) Pub Date : 2020-11-09 DOI: 10.1109/NAP51477.2020.9309704

S. Vakal, A. Yanovska, V. Vakal, T. Yarova, A. Artyukhov, V. Shkola

{"title":"Investigation of Morphology and Composition of the Mineral Fertilizer Granules with Nanostructured Areas","authors":"S. Vakal, A. Yanovska, V. Vakal, T. Yarova, A. Artyukhov, V. Shkola","doi":"10.1109/NAP51477.2020.9309704","DOIUrl":"https://doi.org/10.1109/NAP51477.2020.9309704","url":null,"abstract":"The study of morphology, crystal structure, and elemental composition of controlled-release capsulated mineral fertilizers with nanoporous structure was provided in this work. Four types of fertilizers with nitrogen-containing core and phosphate-containing shell were proposed and analyzed. Various types of plasticizers were used for granulation. Cross-section of granule shelles and the interfaces between thee shell and core were analyzed. Samples with multiple types of core-shell were compared. The quality of nanoporous surface, the presence of shell defects, and features of the interface, particularly the quality of superphosphate shell attachment to carbamide core, were estimated. The presence of small nano-pores along the shell surface makes it possible to reduce the rate of dissolution of the fertilizer in the soil, create fertilizers with prolonged action and increase the uniformity of fertilizer, as well as to control the dissolution time by varying the shell thickness and the relative number of nanopores in the granule shell.","PeriodicalId":6770,"journal":{"name":"2020 IEEE 10th International Conference Nanomaterials: Applications & Properties (NAP)","volume":"1 1","pages":"02IT03-1-02IT03-6"},"PeriodicalIF":0.0,"publicationDate":"2020-11-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"88690002","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 3

Proton Beam Writing on Chitosan Films for Bionanomedicine and Microfluidics: Pilot Experiments 壳聚糖膜上质子束写入生物医学和微流体:中试实验

2020 IEEE 10th International Conference Nanomaterials: Applications & Properties (NAP) Pub Date : 2020-11-09 DOI: 10.1109/NAP51477.2020.9309570

O. Kalinkevich, H. Polozhii, S. Kolinko, Yevgen Zinchenko, A. Kalinkevich, S. Danilchenko, A. Ponomarev, I. Protsenko

{"title":"Proton Beam Writing on Chitosan Films for Bionanomedicine and Microfluidics: Pilot Experiments","authors":"O. Kalinkevich, H. Polozhii, S. Kolinko, Yevgen Zinchenko, A. Kalinkevich, S. Danilchenko, A. Ponomarev, I. Protsenko","doi":"10.1109/NAP51477.2020.9309570","DOIUrl":"https://doi.org/10.1109/NAP51477.2020.9309570","url":null,"abstract":"Proton-beam writing is a high-resolution lithographic technology that can be used to fabricate 3D micro- and nanostructures for various applications. In particular, the method is suitable for creating 3D matrices for cell growth and development. However, mainly polymethylmethacrylate and inorganic silicon polymers are used as resists for such lithographs. At the same time, it is interesting to use biological polymers as a substrate, which has already proven themselves well in medical and biological applications. Chitosan is a naturally occurring polymer that finds its application in various industrial and biomedical fields. Recently, it has become a promising material for biological functionalization of microelectromechanical systems, for creating laboratories on a chip. In our work, we show the possibility of using chitosan films as a positive resist for proton lithography. The proton beam writing technique allows obtaining fine linear structures on the chitosan surface, with excellent quality of walls. Creating fine micro- and nanoscale structures by proton beam writhing opens new possibilities for chitosan-based materials.","PeriodicalId":6770,"journal":{"name":"2020 IEEE 10th International Conference Nanomaterials: Applications & Properties (NAP)","volume":"26 1","pages":"02BA03-1-02BA03-5"},"PeriodicalIF":0.0,"publicationDate":"2020-11-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"90207727","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 1

NAP 2020 Content Volume 2 NAP 2020内容卷2

2020 IEEE 10th International Conference Nanomaterials: Applications & Properties (NAP) Pub Date : 2020-11-09 DOI: 10.1109/nap51477.2020.9309597

引用次数: 0

Influence of Protective Nanocomposite Coatings on the State of Heat Flow in the Cutting Insert 纳米复合防护涂层对切削齿热流状态的影响

2020 IEEE 10th International Conference Nanomaterials: Applications & Properties (NAP) Pub Date : 2020-11-09 DOI: 10.1109/NAP51477.2020.9309548

D. Belous, A. Goncharov, A. Yunda, A. Khomenko, L. Vasilyeva, S. Goncharova

引用次数: 0