2016 IEEE 16th International Conference on Nanotechnology (IEEE-NANO)最新文献_第6页

Micro thermal sensor for nanometric surface defect inspection 用于纳米表面缺陷检测的微热传感器

2016 IEEE 16th International Conference on Nanotechnology (IEEE-NANO) Pub Date : 2016-08-01 DOI: 10.1109/NANO.2016.7751308

Y. Shimizu, Yuki Matsuno, Y. Ohba, W. Gao

{"title":"Micro thermal sensor for nanometric surface defect inspection","authors":"Y. Shimizu, Yuki Matsuno, Y. Ohba, W. Gao","doi":"10.1109/NANO.2016.7751308","DOIUrl":"https://doi.org/10.1109/NANO.2016.7751308","url":null,"abstract":"This paper presents a concept of a micro thermal sensor to be used for defect inspection of a smoothly-finished surface such as a bare wafer or a hard disk. In the proposed concept, existences of the defects on a measurement surface will be detected by scanning the surface with the micro thermal sensor, which is utilized to detect the variation of the thermal flow in-between the sensor surface and the measurement surface. The proposed micro thermal sensor has a possibility of detecting various types of surface defects. An existence of the defect having a convex shape such as an asperity or a particle can be found by detecting a heat generated at the collision between the sensor surface and the tip of the defect. In addition, the thermal sensor is expected to be applied for the inspection of pits or scratches in a concave shape on the smooth surface. When the thermal sensor is placed with respect to the measurement surface with a tiny gap of less than 1 μm, a heat transfer system sensitive against the gap variation will be constructed at the interface between the thermal sensor and the measurement surface becomes a system.","PeriodicalId":6646,"journal":{"name":"2016 IEEE 16th International Conference on Nanotechnology (IEEE-NANO)","volume":"47 1","pages":"978-979"},"PeriodicalIF":0.0,"publicationDate":"2016-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"80487404","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 1

Transient photoluminescence study on spin dynamics in InGaAs-based coupled nanostructures of quantum dots with quantum wells 基于ingaas的量子点耦合纳米结构中自旋动力学的瞬态光致发光研究

2016 IEEE 16th International Conference on Nanotechnology (IEEE-NANO) Pub Date : 2016-08-01 DOI: 10.1109/NANO.2016.7751318

Kazuki Takeishi, Shula L. Chen, J. Takayama, Kodai Itabashi, Masayuki Urabe, A. Murayama

引用次数: 0

Development of non-contact hardness measurements with crater formations by gas cluster ions 气团离子非接触陨石坑硬度测量方法的发展

2016 IEEE 16th International Conference on Nanotechnology (IEEE-NANO) Pub Date : 2016-08-01 DOI: 10.1109/NANO.2016.7751355

N. Toyoda

引用次数: 1

Abnormal transconductance enhancement effects induced by negative bias-stress at high temperature in amorphous-InGaZnO thin-film transistors 非晶ingazno薄膜晶体管高温负偏置应力诱导的异常跨导增强效应

2016 IEEE 16th International Conference on Nanotechnology (IEEE-NANO) Pub Date : 2016-08-01 DOI: 10.1109/NANO.2016.7751554

Bo-Wei Chen, T. Chang, Shin-Ping Huang, Chih-Hung Pan, Y. Hung

引用次数: 1

Effect of conductive nanomaterial dimensions on radio-wave transmission performance of printed antennas 导电纳米材料尺寸对印刷天线无线电波传输性能的影响

2016 IEEE 16th International Conference on Nanotechnology (IEEE-NANO) Pub Date : 2016-08-01 DOI: 10.1109/NANO.2016.7751460

Yusuke Goya, H. Koga, M. Nogi, K. Suganuma

引用次数: 0

Adhesion property of carbon nanotube micelles for high-quality printed transistors 高质量印刷晶体管用碳纳米管胶束的粘附性能

2016 IEEE 16th International Conference on Nanotechnology (IEEE-NANO) Pub Date : 2016-08-01 DOI: 10.1109/NANO.2016.7751528

H. Numata, S. Asano, Fusako Sasaki, T. Saito, F. Nihey, H. Kataura

引用次数: 0

Enhanced gas selectivity by p-n type competition of ZnO nanorods with varied CuO shells 不同CuO壳层ZnO纳米棒的p-n型竞争增强了气体选择性

2016 IEEE 16th International Conference on Nanotechnology (IEEE-NANO) Pub Date : 2016-08-01 DOI: 10.1109/NANO.2016.7751489

Yuanfang Hou, Hi-Wen Chen, Shu-Jen Chen, Ruey‐Chi Wang

引用次数: 0

The influence of the thickness of nanographitic coatings fabricated by electrophoretic deposition on ethanol electro-oxidation 电泳制备纳米涂层厚度对乙醇电氧化性能的影响

2016 IEEE 16th International Conference on Nanotechnology (IEEE-NANO) Pub Date : 2016-08-01 DOI: 10.1109/NANO.2016.7751330

A. A. Daryakenari, Davood Hosseini, A. Apostoluk, Christoph R. Muller, J. Delaunay

引用次数: 0

Transient photoluminescence in InGaN nano-disks fabricated by nano-scale neutral-beam etching utilizing bio-nano templates 利用生物纳米模板制备的InGaN纳米盘的瞬态光致发光研究

2016 IEEE 16th International Conference on Nanotechnology (IEEE-NANO) Pub Date : 2016-08-01 DOI: 10.1109/NANO.2016.7751321

Yafeng Chen, Shula L. Chen, T. Kiba, C. Lee, C. Thomas, Y. Lai, A. Higo, S. Samukawa, A. Murayama

{"title":"Transient photoluminescence in InGaN nano-disks fabricated by nano-scale neutral-beam etching utilizing bio-nano templates","authors":"Yafeng Chen, Shula L. Chen, T. Kiba, C. Lee, C. Thomas, Y. Lai, A. Higo, S. Samukawa, A. Murayama","doi":"10.1109/NANO.2016.7751321","DOIUrl":"https://doi.org/10.1109/NANO.2016.7751321","url":null,"abstract":"We study transient photoluminescence (PL) in In0.2Ga0.8N nano-disks (NDs) fabricated from a 2 or 3 nm-thick quantum well (QW) by damage-free neutral-beam etching utilizing bio-nano-engineered etching templates. A lateral averaged diameter of the ND was controlled to be 9 nm with a high sheet-density up to 2.6×1011 cm-2. Transient PL in the NDs was measured as a function of temperature and compared with that in the mother QWs. Thermal quenching of PL is strongly suppressed in the NDs, while the PL intensity in the QWs rapidly decreases with increasing temperature. A PL-decay time in the NDs is 0.1 ns at 6 K, which is significantly shorter than that of 3.5 ns in the QW. The temperature dependence of the PL decaying property shows that a radiative decay time of 0.1 ns in the NDs is almost constant for temperature, while a non-radiative one decreases with increasing temperature. This significantly faster and relatively temperature-insensitive radiative decay time can be attribute to the strong confinement due to the ND formation in addition to strain relaxation.","PeriodicalId":6646,"journal":{"name":"2016 IEEE 16th International Conference on Nanotechnology (IEEE-NANO)","volume":"8 1","pages":"636-637"},"PeriodicalIF":0.0,"publicationDate":"2016-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"76465543","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Enhancement-mode AlGaN/GaN MIS-HEMTs with low threshold voltage hysteresis using damage-free neutral beam etched gate recess 使用无损伤中性束蚀刻栅极凹槽的低阈值电压迟滞的增强模式AlGaN/GaN miss - hemt

2016 IEEE 16th International Conference on Nanotechnology (IEEE-NANO) Pub Date : 2016-08-01 DOI: 10.1109/NANO.2016.7751501

Yen-Ku Lin, S. Noda, R. Lee, Chia-Ching Huang, Q. Luc, S. Samukawa, E. Chang

引用次数: 1