2016 IEEE 16th International Conference on Nanotechnology (IEEE-NANO)最新文献_第5页

Electron beam introduced metallic nanowires growth 电子束引入了金属纳米线的生长

2016 IEEE 16th International Conference on Nanotechnology (IEEE-NANO) Pub Date : 2016-08-01 DOI: 10.1109/NANO.2016.7751343

Zhichao Chen, Zhan Yang, Tao Chen, Lining Sun, T. Fukuda

引用次数: 1

Nanotechnology requirements and challenges for large-scale brain computing 纳米技术对大规模脑计算的要求和挑战

2016 IEEE 16th International Conference on Nanotechnology (IEEE-NANO) Pub Date : 2016-08-01 DOI: 10.1109/NANO.2016.7751566

Arvind Kumar

引用次数: 0

Novel III-N heterostructure devices for low-power logic and more 新型III-N异质结构器件，用于低功耗逻辑等

2016 IEEE 16th International Conference on Nanotechnology (IEEE-NANO) Pub Date : 2016-08-01 DOI: 10.1109/NANO.2016.7751336

P. Fay, W. Li, L. Cao, K. Pourang, S. M. Islam, C. Lund, S. Saima, H. Ilatikhameneh, T. Amin, J. Huang, R. Rahman, D. Jena, S. Keller, Gerhard Klimeck

{"title":"Novel III-N heterostructure devices for low-power logic and more","authors":"P. Fay, W. Li, L. Cao, K. Pourang, S. M. Islam, C. Lund, S. Saima, H. Ilatikhameneh, T. Amin, J. Huang, R. Rahman, D. Jena, S. Keller, Gerhard Klimeck","doi":"10.1109/NANO.2016.7751336","DOIUrl":"https://doi.org/10.1109/NANO.2016.7751336","url":null,"abstract":"Future ultra-scaled logic and low-power systems require fundamental advances in semiconductor device technology. Due to power constraints, device concepts capable of achieving switching slopes (SS) steeper than 60 mV/decade are essential if scaling of conventional computational architectures is to continue. Likewise, ultra low power systems also benefit from devices capable of maintaining performance under low-voltage operation. Towards this end, tunneling field effect transistors (TFETs) are one promising alternative. While much work has been devoted to realizing TFETs in Si, Ge, and narrow-gap III-V materials, the use of III-N heterostructures and the exploitation of polarization engineering offers some unique opportunities. From physics-based simulations, performance of GaN/InGaN/GaN heterostructure TFETs appear capable of delivering average SS approaching 20 mV/decade over 4 decades of drain current, and on-current densities exceeding 100 μA/μm in aggressively scaled nanowire configurations. Experimental progress towards realizing III-N based TFETs includes demonstration of GaN/InGaN/GaN backward tunnel diodes by both MOCVD and MBE, and nanowires grown selectively by MBE and used as the basis for device fabrication.","PeriodicalId":6646,"journal":{"name":"2016 IEEE 16th International Conference on Nanotechnology (IEEE-NANO)","volume":"4 1","pages":"767-769"},"PeriodicalIF":0.0,"publicationDate":"2016-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"74072436","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 3

Electrostatic actuation of folded multi-graphene structure for nano-gripper 纳米夹持器折叠多石墨烯结构的静电驱动

2016 IEEE 16th International Conference on Nanotechnology (IEEE-NANO) Pub Date : 2016-08-01 DOI: 10.1109/NANO.2016.7751477

Takafumi Fujiwara, M. Nakajima, A. Ichikawa, K. Ohara, Y. Hasegawa, T. Fukuda

引用次数: 4

Acousto-optic coupling in phoxonic-plasmonic crystal nanobeam cavities 光子-等离子体晶体纳米束腔中的声光耦合

2016 IEEE 16th International Conference on Nanotechnology (IEEE-NANO) Pub Date : 2016-08-01 DOI: 10.1109/NANO.2016.7751360

Tzy-Rong Lin, Shu-Yu Chang, Cong-Yuan Shih, Jheng-Hong Shih, T. Lu, J. Hsu

引用次数: 0

Optical control of adhesion property of magnetic nanosensor using photochromism for effective manipulation and cell injection 利用光致变色技术对磁性纳米传感器的粘附特性进行光学控制，实现有效的操作和细胞注射

2016 IEEE 16th International Conference on Nanotechnology (IEEE-NANO) Pub Date : 2016-08-01 DOI: 10.1109/NANO.2016.7751565

H. Hashim, Wu Lei, H. Maruyama, T. Masuda, F. Arai

{"title":"Optical control of adhesion property of magnetic nanosensor using photochromism for effective manipulation and cell injection","authors":"H. Hashim, Wu Lei, H. Maruyama, T. Masuda, F. Arai","doi":"10.1109/NANO.2016.7751565","DOIUrl":"https://doi.org/10.1109/NANO.2016.7751565","url":null,"abstract":"Effective manipulation and rapid injection of nanosensor with high cell viability have great significance to biological and biomedical applications such as drug delivery and cells biology. This study presents manipulation of a magnetic nanosensor with a temperature indicator and immobilization onto cell surface using glass nanoprobe by Coulomb's force. The nanosensor is stained by Rhodamine B as the temperature indicator and is contained by lipid layer with Spiropyran (SP), which is a photochromic material. The zeta potential of nanosensor is switched between negative and positive by photo-isomerization of SP. The zeta potential of the liposome is switched to positive by UV illumination and recovered to negative by VIS illumination. The nanosensor is picked up and transported by glass nanoprobe. The positively charged nanosensor is immobilized to the cell membrane since the zeta potential of cell membrane is negative. The immobilized nanosensor can be injected into the cell cytoplasm by local laser heating. We demonstrated the manipulation and injection of the Ø750 nm magnetic nanosensor by the micromanipulator and local laser heating.","PeriodicalId":6646,"journal":{"name":"2016 IEEE 16th International Conference on Nanotechnology (IEEE-NANO)","volume":"82 1","pages":"683-686"},"PeriodicalIF":0.0,"publicationDate":"2016-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"85183271","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 1

Fast and accurate evaluation of delay in CNFET circuits CNFET电路中延迟的快速准确评估

2016 IEEE 16th International Conference on Nanotechnology (IEEE-NANO) Pub Date : 2016-08-01 DOI: 10.1109/NANO.2016.7751516

Muhammad Ali, Mohammad A. Ahmed, M. Chrzanowska-Jeske

引用次数: 5

Comparative study on photocatalytic and bactericidal activity between Ag@TiO2 core-shell nanoparticles and Ag@TiO2 surface doped nanostructures Ag@TiO2核壳纳米粒子与Ag@TiO2表面掺杂纳米结构光催化杀菌活性的比较研究

2016 IEEE 16th International Conference on Nanotechnology (IEEE-NANO) Pub Date : 2016-08-01 DOI: 10.1109/NANO.2016.7751299

Xiaohong Yang, H. Fu, X. An

引用次数: 3

Solution-processed perovskite for direct X-ray detection 直接x射线检测的溶液处理钙钛矿

2016 IEEE 16th International Conference on Nanotechnology (IEEE-NANO) Pub Date : 2016-08-01 DOI: 10.1109/NANO.2016.7751377

Chenggan Chen, Chi Li, Huan Zhang, Qing Dai, Hang Zhou

引用次数: 1

The influence on intensity ratio of peak emission between recombination of free-excitons and deep-defect for ZnO nanostructure evolution from nanorods to nanotubes 自由激子复合与深度缺陷对ZnO纳米结构由纳米棒向纳米管演化的峰值发射强度比的影响

2016 IEEE 16th International Conference on Nanotechnology (IEEE-NANO) Pub Date : 2016-08-01 DOI: 10.1109/NANO.2016.7751365

W. Tsai, Shih-Shou Lo

{"title":"The influence on intensity ratio of peak emission between recombination of free-excitons and deep-defect for ZnO nanostructure evolution from nanorods to nanotubes","authors":"W. Tsai, Shih-Shou Lo","doi":"10.1109/NANO.2016.7751365","DOIUrl":"https://doi.org/10.1109/NANO.2016.7751365","url":null,"abstract":"Zinc oxide (ZnO) nanorods are grown by a hydrothermal method. The morphology was changed from nanorod to nanotube via a well-controlled chemical aqueous etching process with appropriate amount potassium chloride (KCl). SEM analyses show that the ZnO nanorods can be changed to nanotubes when the chemical etching process was adopted with appropriate KCl concentration and etching time. Uniform ZnO nanotube can be achieved formed when the ZnO nanorods were immersed in 4M KCl aqueous with 13 hrs. The luminescence character of nanorods and nanotubes were investigated by the temperature dependence photoluminescence spectra. Two peaks (excitonic peak and deep level emission) were observed in both morphologies. However, the excitonic peak intensity (EI) and defect related emission peak intensity (DI) ratio of ZnO nanotubes increase when the etching time increases. The intensity ratio variation of EI to DI maybe can be attributed to the surface state of ZnO are increased and oxygen defects of ZnO are decreased in the etching process. The potential application of ZnO nanotubes is demonstrated.","PeriodicalId":6646,"journal":{"name":"2016 IEEE 16th International Conference on Nanotechnology (IEEE-NANO)","volume":"1 1","pages":"387-389"},"PeriodicalIF":0.0,"publicationDate":"2016-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"83825674","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0