2016 IEEE 16th International Conference on Nanotechnology (IEEE-NANO)最新文献_第10页

Particle manipulation via opto-thermally generated bubbles in open chip environment 在开放芯片环境中通过光热产生气泡的粒子操纵

2016 IEEE 16th International Conference on Nanotechnology (IEEE-NANO) Pub Date : 2016-08-01 DOI: 10.1109/NANO.2016.7751417

Liguo Dai, N. Jiao, Lianqing Liu

引用次数: 3

THz analog to digital converter using single sided spoof surface plasmon polariton waveguide 采用单面欺骗表面等离子激元波导的太赫兹数模转换器

2016 IEEE 16th International Conference on Nanotechnology (IEEE-NANO) Pub Date : 2016-08-01 DOI: 10.1109/NANO.2016.7751513

Mahdi Aghadjani, P. Mazumder

引用次数: 0

Layer-by-layer self-assembly for fabrication of recyclable magnetic antimicrobial nanocomposites 一层一层自组装制备可回收磁性抗菌纳米复合材料

2016 IEEE 16th International Conference on Nanotechnology (IEEE-NANO) Pub Date : 2016-08-01 DOI: 10.1109/NANO.2016.7751296

X. Wang, Bingcheng Hu, X. Xing

引用次数: 0

Characterisation of carbonaceous deposition in oil exposed surfaces at the nanoscale 纳米尺度下石油暴露表面碳质沉积表征

2016 IEEE 16th International Conference on Nanotechnology (IEEE-NANO) Pub Date : 2016-08-01 DOI: 10.1109/NANO.2016.7751396

Domna-Maria Kaimaki, Ben E. Smith, Sorin V Filip, C. Durkan

引用次数: 1

Efficient nanostructure construction on polymer substrates by plasma treatment for tissue engineering 组织工程中等离子体处理在聚合物基底上高效构建纳米结构

2016 IEEE 16th International Conference on Nanotechnology (IEEE-NANO) Pub Date : 2016-08-01 DOI: 10.1109/NANO.2016.7751380

I. Michaljaničová, P. Slepička, M. Veselý, V. Svorcik

引用次数: 1

Optimization of dual-threshold independent-gate FinFETs for compact low power logic circuits 用于紧凑低功耗逻辑电路的双阈值独立门finfet的优化

2016 IEEE 16th International Conference on Nanotechnology (IEEE-NANO) Pub Date : 2016-08-01 DOI: 10.1109/NANO.2016.7751552

Xuqiang Zhang, Jianping Hu, Xiaoyan Luo

引用次数: 13

Graphene field-effect transistors-based biosensors for Escherichia coli detection 基于石墨烯场效应晶体管的大肠杆菌检测生物传感器

2016 IEEE 16th International Conference on Nanotechnology (IEEE-NANO) Pub Date : 2016-08-01 DOI: 10.1109/NANO.2016.7751414

Guangfu Wu, M. Meyyappan, K. Lai

{"title":"Graphene field-effect transistors-based biosensors for Escherichia coli detection","authors":"Guangfu Wu, M. Meyyappan, K. Lai","doi":"10.1109/NANO.2016.7751414","DOIUrl":"https://doi.org/10.1109/NANO.2016.7751414","url":null,"abstract":"Novel devices are desperately required for effective detection of bacteria because of its potential risks in the fields of food safety and public health. In this paper, we demonstrated graphene field-effect transistors (G-FETs) for Escherichia coli (E. coli) detection. Linker molecules and antibodies were employed to functionalize graphene. Raman spectroscopy and confocal microscopy were used to confirm the functionalization process of the linker molecules and antibodies. The linker molecule (1-pyrenebutanoic acid succinimidyl ester, PBASE) contains two parts: pyrene backbone and succinimidyl ester group. Pyrene attached onto the graphene surface via π-π stacking, and succinimidyl ester group covalently reacted with amino group of antibodies. Antibodies functionalized G-FETs enabled effective E. coli detection. The results showed that the Dirac point of the G-FETs shifted to right after detection of E. coli bacteria. Our G-FETs devices showed an obvious increase in the electrical current when the E. coli concentration was 5×103 CFU/mL. The simple and label-free biosensor reported here possesses promising potential to serve as a platform for other bacteria, protein and small molecule detection.","PeriodicalId":6646,"journal":{"name":"2016 IEEE 16th International Conference on Nanotechnology (IEEE-NANO)","volume":"3 1","pages":"22-25"},"PeriodicalIF":0.0,"publicationDate":"2016-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"88114778","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 18

Deposition and micromachining of graphene nanowall towards high-performance microsystems 面向高性能微系统的石墨烯纳米壁沉积与微加工

2016 IEEE 16th International Conference on Nanotechnology (IEEE-NANO) Pub Date : 2016-08-01 DOI: 10.1109/NANO.2016.7751525

Jinhua Li, Zhuqing Wang, T. Ono

引用次数: 0

Chemically-induced structural deformation of layered perovskite oxides 层状钙钛矿氧化物的化学诱导结构变形

2016 IEEE 16th International Conference on Nanotechnology (IEEE-NANO) Pub Date : 2016-08-01 DOI: 10.1109/NANO.2016.7751481

Takashi Nakamura, K. Amezawa

{"title":"Chemically-induced structural deformation of layered perovskite oxides","authors":"Takashi Nakamura, K. Amezawa","doi":"10.1109/NANO.2016.7751481","DOIUrl":"https://doi.org/10.1109/NANO.2016.7751481","url":null,"abstract":"In order to understand the behavior of the crystal lattice deformation induced by the interstitial oxygen formation in La2(Ni0.9M0.1)O4+δ (M = Fe, Co, Cu), thermogravimetry, coulometric titration, and high temperature X-ray diffraction measurements were carried out in the temperature range between 873 to 1173 K and the P(O2) range between 10-24 to 1 bar. Oxygen content variation under wide range of P(O2) could be successfully evaluated by combining thermogravimetry and coulometric titration techniques. Compared with non-doped La2NiO4+δ, La2(Ni0.9Fe0.1)O4+δ and La2(Ni0.9Co0.1)O4+δ have more interstitial oxygen while La2(Ni0.9Cu0.1)O4+δ have less. Crystal structure at high temperatures was analyzed assuming the tetragonal symmetry, I4/mmm, for all compositions. With increasing interstitial oxygen concentration, the lattice parameter perpendicular to the perovskite layer increased and that parallel to the perovskite layer decreased. Consequently, the change of the cell volume by the interstitial oxygen formation was small, meaning macroscopic chemical expansion is small.","PeriodicalId":6646,"journal":{"name":"2016 IEEE 16th International Conference on Nanotechnology (IEEE-NANO)","volume":"72 1","pages":"429-430"},"PeriodicalIF":0.0,"publicationDate":"2016-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"86155485","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 1

Spike-based time-domain weighted-sum calculation using nanodevices for low power operation 低功耗下纳米器件的时域加权和计算

2016 IEEE 16th International Conference on Nanotechnology (IEEE-NANO) Pub Date : 2016-08-01 DOI: 10.1109/NANO.2016.7751490

T. Morie, Haichao Liang, Takashi Tohara, Hirofumi Tanaka, M. Igarashi, S. Samukawa, K. Endo, Yasuo Takahashi

{"title":"Spike-based time-domain weighted-sum calculation using nanodevices for low power operation","authors":"T. Morie, Haichao Liang, Takashi Tohara, Hirofumi Tanaka, M. Igarashi, S. Samukawa, K. Endo, Yasuo Takahashi","doi":"10.1109/NANO.2016.7751490","DOIUrl":"https://doi.org/10.1109/NANO.2016.7751490","url":null,"abstract":"This paper introduces a time-domain weighted-sum calculation operation based on a spiking neuron model, and discusses a resistance-capacitance circuit that performs a calculation operation assumed to be realized in CMOS VLSI technology. A nanodevice that executes this calculation is also presented. The calculation circuit is useful for extremely low power operation. This operation uses the rising slopes of post-synaptic potentials triggered by input spike pulses. In the time-domain calculation circuit, the energy dissipation is independent of the resistance, and only depends on the capacitance and voltages. However, the time constant, which is the product of the resistance and capacitance, should be relatively large to guarantee the calculation resolution, and therefore the resistance should be at the giga-ohms levels. The nanodevice consists of a nanodisk array connected with a fin field-effect transistor. Nanodisk arrays can be fabricated using a self-assembly bio-nano-template technique, and they act as resistors with resistance levels of several giga-ohms. A weighted sum can be achieved with an energy dissipation on the order of 1 fJ, with a number of inputs that can be more than 100. This amount of energy is several orders of magnitude lower than that of conventional digital processors.","PeriodicalId":6646,"journal":{"name":"2016 IEEE 16th International Conference on Nanotechnology (IEEE-NANO)","volume":"23 1","pages":"390-392"},"PeriodicalIF":0.0,"publicationDate":"2016-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"78180376","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 10