2015 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP)最新文献_第8页

Microwave wide bandgap GaN high electron mobility transistor development and its monolithic integrated circuits (Invited) 微波宽禁带氮化镓高电子迁移率晶体管的研制及其单片集成电路(特邀)

2015 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP) Pub Date : 2015-07-01 DOI: 10.1109/IMWS-AMP.2015.7324950

H. Chiu, Chih-Wei Yang, Hsiang-Chun Wang, F. Huang

{"title":"Microwave wide bandgap GaN high electron mobility transistor development and its monolithic integrated circuits (Invited)","authors":"H. Chiu, Chih-Wei Yang, Hsiang-Chun Wang, F. Huang","doi":"10.1109/IMWS-AMP.2015.7324950","DOIUrl":"https://doi.org/10.1109/IMWS-AMP.2015.7324950","url":null,"abstract":"Wide bandgap gallium nitride (GaN) high electron mobility transistor (HEMT) has been extensively studied [1]. The material properties of GaN compared to competing materials are presented in Table I. The superior material properties high breakdown voltage, which allows large drain voltages to be used, leading to high output impedance per watt of RF power, and lower loss matching circuits. High current density of 2-D electron gas (2-DEG) leads to large sheet charge [2] and transistor area can be reduced resulting in high watts per millimeter of gate periphery. High saturated velocity leads to high saturation current densities and watts per unit gate periphery. These result GaN based HEMT are suitable for high-power and high-frequency monolithic microwave integrated circuit (MMIC) applications [3-5]. Due to these excellent material characteristics, the output power and efficiency of GaN power amplifier between L-band and Ka-band was not only more superior to the conventional LDMOSFETs and GaAs power amplifier, but also the die area can be reduced. The GaN HEMT can be operated at 42 V of VDS and even higher, while also demostrated the similar fT and fmax with GaAs pHEMT. The high powers from GaN HEMT transistors at a wide frequency range have been reported form a single die up to several hundred watts [6-7]. However, these high power densities also present extreme power dissipation on the layouts and the semiconductor substrates. Nevertheless, the SiC substrates with a high thermal conductivity (> 330 W/mK) allows high power densities to be efficiently dissipated for practical drain efficiencies, preventing the extreme channel that would result due to self-heating with other substrate technologies.","PeriodicalId":6625,"journal":{"name":"2015 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP)","volume":"342 1","pages":"1-3"},"PeriodicalIF":0.0,"publicationDate":"2015-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"76912722","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 1

Influence of surface/interface stress on thermal conductivity of stressed GaN nanofilms 表面/界面应力对应力GaN纳米膜导热性的影响

2015 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP) Pub Date : 2015-07-01 DOI: 10.1109/IMWS-AMP.2015.7324995

Linli Zhu, Hao Luo

引用次数: 1

Novel polarization independent and angle consistency absorber based on metal-dielectric metamaterial 基于金属-介电材料的新型极化无关和角度一致性吸收体

2015 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP) Pub Date : 2015-07-01 DOI: 10.1109/IMWS-AMP.2015.7325035

Ju Gao, Qun Wu, Kuang Zhang

引用次数: 1

Axial ratio enhanced wideband circularly polarized aperture antenna with corner-truncated AMC reflector 角截断AMC反射面轴比增强宽带圆极化孔径天线

2015 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP) Pub Date : 2015-07-01 DOI: 10.1109/IMWS-AMP.2015.7324935

Baolin Cao, Danyun Li, Yuan Zhao, Hao Wang, Yong Huang

引用次数: 1

The design of a high gain on-chip antenna for SoC application 一种适用于SoC的高增益片上天线的设计

2015 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP) Pub Date : 2015-07-01 DOI: 10.1109/IMWS-AMP.2015.7324967

Yexi Song, Yunqiu Wu, Jie Yang, K. Kang

引用次数: 15

A palladium decorated signal walled carbon nanotube enabled chipless sensor for detecting methane at room temperature based on UWB-RFID system 一种基于超宽带射频识别系统的室温甲烷无芯片传感器

2015 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP) Pub Date : 2015-07-01 DOI: 10.1109/IMWS-AMP.2015.7325027

Jian Liu, Baiping Li

{"title":"A palladium decorated signal walled carbon nanotube enabled chipless sensor for detecting methane at room temperature based on UWB-RFID system","authors":"Jian Liu, Baiping Li","doi":"10.1109/IMWS-AMP.2015.7325027","DOIUrl":"https://doi.org/10.1109/IMWS-AMP.2015.7325027","url":null,"abstract":"In order to detect methane at room temperature, a chipless methane sensor in ultra-wideband radio frequency identification (UWB-RFID) is designed in the paper. The proposed sensor is a type of thin film equipped by an antenna and a nano-technique enabled sensor head. The antenna is a planar patch with arc typed edge loaded by lumped circuit for impedance matching; the sensor head is an electrode with interdigitated fingers (IDE) loaded by the palladium decorated single walled carbon nanotubes (Pd-SWCNTs). The performance of the proposed sensor is validated by the analytical and numerical analyses in terms of a predefined scenario where the concentration of methane is increased from 0ppm to 100ppm at room temperature. Results show that, if the sensor is geometrized in the mechanism of amplitude modulation of band-gap, the identifiable sensitivity can achieve -9.32dB; on the contrary, if it is geometrized in the mechanism of frequency modulation of band-gap, the identifiable sensitivity can achieve a little bit high by -11.30dB.","PeriodicalId":6625,"journal":{"name":"2015 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP)","volume":"28 1","pages":"1-3"},"PeriodicalIF":0.0,"publicationDate":"2015-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"78649855","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Fast simulation of microwave devices via a data-sparse and explicit CN-FETD method 基于数据稀疏和显式CN-FETD方法的微波器件快速仿真

2015 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP) Pub Date : 2015-07-01 DOI: 10.1109/IMWS-AMP.2015.7325018

T. Wan, L. Du, Yunqin Hu

引用次数: 1

High-speed and low-power OOK CMOS transmitter and receiver for wireless chip-to-chip communication 用于无线片对片通信的高速低功耗OOK CMOS发射器和接收器

2015 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP) Pub Date : 2015-07-01 DOI: 10.1109/IMWS-AMP.2015.7324964

H. Lee, J. Lee, C. Lee, T. Jang, H. Kim, C. Park

引用次数: 8

A novel central-stub-loaded, dual-band bandpass filter for PCS and WiMAX application 一种新颖的中央存根负载的双带带通滤波器，适用于pc和WiMAX应用

2015 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP) Pub Date : 2015-07-01 DOI: 10.1109/IMWS-AMP.2015.7325021

M. Tang, Ting Shi

引用次数: 2

Temperature and doping dependence of the optical properties of silicon at terahertz frequencies 太赫兹频率下硅光学特性的温度和掺杂依赖性

2015 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP) Pub Date : 2015-07-01 DOI: 10.1109/IMWS-AMP.2015.7324978

Jun Zhou, Xin Rao, Shan Tu, Lu Duan, Xiao-dong Chen

引用次数: 0