2015 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP)最新文献_第10页

A novel RF-MEMS shunt capacitive switch design for dielectric charging mitigation 一种新型RF-MEMS并联电容开关设计

2015 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP) Pub Date : 2015-07-01 DOI: 10.1109/IMWS-AMP.2015.7324955

Yuhao Liu, Songjie Bi, Yusha Bey, X. Liu

引用次数: 1

Novel on-chip passive circuits for RF, microwave, millimeter-wave and sub-THz applications 用于射频、微波、毫米波和次太赫兹应用的新型片上无源电路

2015 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP) Pub Date : 2015-07-01 DOI: 10.1109/IMWS-AMP.2015.7324966

H. Qian, Xun Luo

{"title":"Novel on-chip passive circuits for RF, microwave, millimeter-wave and sub-THz applications","authors":"H. Qian, Xun Luo","doi":"10.1109/IMWS-AMP.2015.7324966","DOIUrl":"https://doi.org/10.1109/IMWS-AMP.2015.7324966","url":null,"abstract":"In this paper, novel on-chip passive circuits for the RF, microwave, millimeter-wave, and sub-THz applications are introduced. First, an on-chip stacked stepped-impedance (SSI) inductor with an adjusted high quality-factor is analyzed and employed for RF VCO design with low phase-noise performance. Secondly, based on the proposed SSI inductor, a SSI transformer is implemented for the wideband matching network with high passive efficiency for a microwave power amplifier design with a wideband operation (i.e., 3.5-9.5 GHz). Thirdly, a novel on-chip 3D self-shielded capacitor is introduced for mm-wave application, i.e., 60 GHz DCO. Finally, a new slow-wave sub-THz resonant cell is introduced for the dual-resonance (i.e., 237 and 380 GHz) allocation for the dual-band sub-THz application. All the passive circuits mentioned above are fabricated using the silicon-based technology (i.e., CMOS and SiGe). Good agreements between the measurements and simulations are achieved, which verify the feasibility of the proposed circuits for the practical applications.","PeriodicalId":6625,"journal":{"name":"2015 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP)","volume":"17 1","pages":"1-5"},"PeriodicalIF":0.0,"publicationDate":"2015-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"81825150","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

CMOS sub-THz on-chip communication with SRR modulator and SPP interconnect 用SRR调制器和SPP互连的CMOS亚太赫兹片上通信

2015 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP) Pub Date : 2015-07-01 DOI: 10.1109/IMWS-AMP.2015.7324965

Yuan Liang, Hao Yu, Chang Yang, Nan Li, Xiuping Li, Xiong Liu, Junfeng Zhao, Wei Yang, Yuangang Wang

引用次数: 4

A novel tunable high impedance surface electromagnetic band gap metamaterials for RF and microwave applications 一种用于射频和微波应用的新型可调谐高阻抗表面电磁带隙材料

2015 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP) Pub Date : 2015-07-01 DOI: 10.1109/IMWS-AMP.2015.7324931

T. Loh, Z. Tian, P. Patel

引用次数: 1

Research on terahertz science and engineering at the state key laboratory of millimeter waves, partner laboratory in City University of Hong Kong 香港城市大学合作实验室毫米波国家重点实验室太赫兹科学与工程研究

2015 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP) Pub Date : 2015-07-01 DOI: 10.1109/IMWS-AMP.2015.7324938

K. Ng, D. Wang, C. Chan, H. Yi, X. Bai, S. Qu

{"title":"Research on terahertz science and engineering at the state key laboratory of millimeter waves, partner laboratory in City University of Hong Kong","authors":"K. Ng, D. Wang, C. Chan, H. Yi, X. Bai, S. Qu","doi":"10.1109/IMWS-AMP.2015.7324938","DOIUrl":"https://doi.org/10.1109/IMWS-AMP.2015.7324938","url":null,"abstract":"Summary form only given. In this presentation, we will provide an overview on the research activities on terahertz (THz) science and technology recently conducted at the State Key Laboratory of Millimeter Waves (SKLMW), Partner Laboratory in City University of Hong Kong. SKLMW was established in 2008 with the approval of the Ministry of Science and Technology and our partner is the State Key Laboratory of Millimeter Waves at Southeast University. One of the key research focuses of the laboratory is terahertz science and technology, a highly-interdisciplinary research area. As such, we have internal members not only from electronic engineering but also physics, materials science, biology and chemistry. To promote international collaborations, we also have external lab members from China and UK. To facilitate our research on THz, the laboratory is equipped with an Agilent PNA-X vector network analyzer with extension modules from OML and VDI, covering the full range of 90GHz to 1.1THz. In addition, we also have an EKSPLA THz spectrometer that has a pulse duration of less than 90 fs and a spectral range from 0.1 to 3.5THz.","PeriodicalId":6625,"journal":{"name":"2015 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP)","volume":"24 1","pages":"1-1"},"PeriodicalIF":0.0,"publicationDate":"2015-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"73489988","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

AlGaN/GaN HEMT development targeted for S-band application 针对s波段应用的AlGaN/GaN HEMT开发

2015 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP) Pub Date : 2015-07-01 DOI: 10.1109/IMWS-AMP.2015.7324952

Chenggong Yin, Xi Song, Xinchuan Zhang, Mengjie Zhou, Yongsheng Zhang, N. Zhang, Y. Pei

引用次数: 2

Analysis of trapping effect in GaN HEMT modeling GaN HEMT模型中的俘获效应分析

2015 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP) Pub Date : 2015-07-01 DOI: 10.1109/IMWS-AMP.2015.7324919

Weiqiang Qian, Mehdi Khan, Dong Huang, F. Lin

引用次数: 1

Characterization of multilayer graphene ribbon based THz resonators 多层石墨烯带基太赫兹谐振器的表征

2015 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP) Pub Date : 2015-07-01 DOI: 10.1109/IMWS-AMP.2015.7324901

Xiang Li, Linsheng Wu, J. Mao

引用次数: 4

A horizontally polarized 360-degree radiation pattern steerable antenna based on active frequency selective surface 一种基于有源频率选择面的水平极化360度辐射方向图可操纵天线

2015 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP) Pub Date : 2015-07-01 DOI: 10.1109/IMWS-AMP.2015.7324933

L. Zhang, Yanhui Liu, L. Ye, Hai Liu, Q. Liu

引用次数: 2

The RCS reduction of microstrip antenna design based on multi-band metamaterial absorber 基于多波段超材料吸收体的微带天线RCS降低设计

2015 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP) Pub Date : 2015-07-01 DOI: 10.1109/IMWS-AMP.2015.7324998

Wenhui Li, Shen Yang, Jie-qiu Zhang, S. Sai, Hangying Yuan, S. Qu

引用次数: 7