2015 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP)最新文献_第10页

A novel RF-MEMS shunt capacitive switch design for dielectric charging mitigation 一种新型RF-MEMS并联电容开关设计

2015 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP) Pub Date : 2015-07-01 DOI: 10.1109/IMWS-AMP.2015.7324955

Yuhao Liu, Songjie Bi, Yusha Bey, X. Liu

引用次数: 1

Novel on-chip passive circuits for RF, microwave, millimeter-wave and sub-THz applications 用于射频、微波、毫米波和次太赫兹应用的新型片上无源电路

2015 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP) Pub Date : 2015-07-01 DOI: 10.1109/IMWS-AMP.2015.7324966

H. Qian, Xun Luo

{"title":"Novel on-chip passive circuits for RF, microwave, millimeter-wave and sub-THz applications","authors":"H. Qian, Xun Luo","doi":"10.1109/IMWS-AMP.2015.7324966","DOIUrl":"https://doi.org/10.1109/IMWS-AMP.2015.7324966","url":null,"abstract":"In this paper, novel on-chip passive circuits for the RF, microwave, millimeter-wave, and sub-THz applications are introduced. First, an on-chip stacked stepped-impedance (SSI) inductor with an adjusted high quality-factor is analyzed and employed for RF VCO design with low phase-noise performance. Secondly, based on the proposed SSI inductor, a SSI transformer is implemented for the wideband matching network with high passive efficiency for a microwave power amplifier design with a wideband operation (i.e., 3.5-9.5 GHz). Thirdly, a novel on-chip 3D self-shielded capacitor is introduced for mm-wave application, i.e., 60 GHz DCO. Finally, a new slow-wave sub-THz resonant cell is introduced for the dual-resonance (i.e., 237 and 380 GHz) allocation for the dual-band sub-THz application. All the passive circuits mentioned above are fabricated using the silicon-based technology (i.e., CMOS and SiGe). Good agreements between the measurements and simulations are achieved, which verify the feasibility of the proposed circuits for the practical applications.","PeriodicalId":6625,"journal":{"name":"2015 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP)","volume":"17 1","pages":"1-5"},"PeriodicalIF":0.0,"publicationDate":"2015-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"81825150","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

CMOS sub-THz on-chip communication with SRR modulator and SPP interconnect 用SRR调制器和SPP互连的CMOS亚太赫兹片上通信

2015 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP) Pub Date : 2015-07-01 DOI: 10.1109/IMWS-AMP.2015.7324965

Yuan Liang, Hao Yu, Chang Yang, Nan Li, Xiuping Li, Xiong Liu, Junfeng Zhao, Wei Yang, Yuangang Wang

引用次数: 4

A novel tunable high impedance surface electromagnetic band gap metamaterials for RF and microwave applications 一种用于射频和微波应用的新型可调谐高阻抗表面电磁带隙材料

2015 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP) Pub Date : 2015-07-01 DOI: 10.1109/IMWS-AMP.2015.7324931

T. Loh, Z. Tian, P. Patel

引用次数: 1

Experimental study on 340GHz wave material penetration attenuation properties 340GHz波材料穿透衰减特性实验研究

2015 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP) Pub Date : 2015-07-01 DOI: 10.1109/IMWS-AMP.2015.7324977

Xiaofan Yang, Liandong Wang, Yonghu Zeng, Xianqi Lin, Bo Zhang

{"title":"Experimental study on 340GHz wave material penetration attenuation properties","authors":"Xiaofan Yang, Liandong Wang, Yonghu Zeng, Xianqi Lin, Bo Zhang","doi":"10.1109/IMWS-AMP.2015.7324977","DOIUrl":"https://doi.org/10.1109/IMWS-AMP.2015.7324977","url":null,"abstract":"The study on the properties of terahertz (THz) wave propagation in complex atmosphere always been key technology for variety terahertz communication modes, such as wideband & high-speed network, astro-satellite communication, altitude aero-craft communication, long distance vast data transfer, short range wireless security communication etc. There are four main factors make effects on the free space THz wave propagation attenuation, free space radiation loss, atmospheric gases loss, atmospheric particle scatter loss, material penetration attenuation, and quasi-multipath refraction loss effect. Among aforementioned factors, the first part free space radiation loss could be calculated by furies equation. The second part atmospheric gases loss is determined by wave frequency, weather condition and atmosphere composition. The third part atmospheric particle scatter could be neglected when compare with first two attenuation. While the fourth part material penetration attenuation is influenced by shield material's equivalent dielectric constant and its dimension. This paper discuses solid electronics based THz band T/R modules design, and the series 0.34THz wave material penetration attenuation experiment's diagram and its results.","PeriodicalId":6625,"journal":{"name":"2015 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP)","volume":"24 1","pages":"1-3"},"PeriodicalIF":0.0,"publicationDate":"2015-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"75946350","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 1

AlGaN/GaN HEMT development targeted for S-band application 针对s波段应用的AlGaN/GaN HEMT开发

2015 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP) Pub Date : 2015-07-01 DOI: 10.1109/IMWS-AMP.2015.7324952

Chenggong Yin, Xi Song, Xinchuan Zhang, Mengjie Zhou, Yongsheng Zhang, N. Zhang, Y. Pei

引用次数: 2

Research on terahertz science and engineering at the state key laboratory of millimeter waves, partner laboratory in City University of Hong Kong 香港城市大学合作实验室毫米波国家重点实验室太赫兹科学与工程研究

2015 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP) Pub Date : 2015-07-01 DOI: 10.1109/IMWS-AMP.2015.7324938

K. Ng, D. Wang, C. Chan, H. Yi, X. Bai, S. Qu

{"title":"Research on terahertz science and engineering at the state key laboratory of millimeter waves, partner laboratory in City University of Hong Kong","authors":"K. Ng, D. Wang, C. Chan, H. Yi, X. Bai, S. Qu","doi":"10.1109/IMWS-AMP.2015.7324938","DOIUrl":"https://doi.org/10.1109/IMWS-AMP.2015.7324938","url":null,"abstract":"Summary form only given. In this presentation, we will provide an overview on the research activities on terahertz (THz) science and technology recently conducted at the State Key Laboratory of Millimeter Waves (SKLMW), Partner Laboratory in City University of Hong Kong. SKLMW was established in 2008 with the approval of the Ministry of Science and Technology and our partner is the State Key Laboratory of Millimeter Waves at Southeast University. One of the key research focuses of the laboratory is terahertz science and technology, a highly-interdisciplinary research area. As such, we have internal members not only from electronic engineering but also physics, materials science, biology and chemistry. To promote international collaborations, we also have external lab members from China and UK. To facilitate our research on THz, the laboratory is equipped with an Agilent PNA-X vector network analyzer with extension modules from OML and VDI, covering the full range of 90GHz to 1.1THz. In addition, we also have an EKSPLA THz spectrometer that has a pulse duration of less than 90 fs and a spectral range from 0.1 to 3.5THz.","PeriodicalId":6625,"journal":{"name":"2015 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP)","volume":"24 1","pages":"1-1"},"PeriodicalIF":0.0,"publicationDate":"2015-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"73489988","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Dynamic co-polarization decoupling method using tunable resonators 采用可调谐谐振器的动态共极化解耦方法

2015 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP) Pub Date : 2015-07-01 DOI: 10.1109/IMWS-AMP.2015.7324990

L. Zhang, Yanhui Liu, L. Ye, Hai Liu, Q. Liu

引用次数: 2

High performance photodetectors based on two-dimensional materials 基于二维材料的高性能光电探测器

2015 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP) Pub Date : 2015-07-01 DOI: 10.1109/IMWS-AMP.2015.7324970

Shaojuan Li, Yusheng Wang, Hong Qiao, Jian Yuan, Q. Bao

引用次数: 1

Characterization of multilayer graphene ribbon based THz resonators 多层石墨烯带基太赫兹谐振器的表征

2015 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP) Pub Date : 2015-07-01 DOI: 10.1109/IMWS-AMP.2015.7324901

Xiang Li, Linsheng Wu, J. Mao

引用次数: 4