AlGaN/GaN HEMT development targeted for S-band application

2015 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP) Pub Date : 2015-07-01 DOI:10.1109/IMWS-AMP.2015.7324952

Chenggong Yin, Xi Song, Xinchuan Zhang, Mengjie Zhou, Yongsheng Zhang, N. Zhang, Y. Pei

引用次数: 2

Abstract

This paper demonstrates a 180W packaged AlGaN/GaN HEMT targeted for S-band application, operating at 48V drain bias voltage. Under WCDMA (with DPD) test, the average power and drain efficiency are 35W and 33.3%. After 1000 hours HTRB test, no electrical failure of the device is observed.

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针对s波段应用的AlGaN/GaN HEMT开发

本文演示了一种180W封装的AlGaN/GaN HEMT，用于s波段应用，工作在48V漏极偏置电压下。在WCDMA(带DPD)测试下，平均功率和漏极效率分别为35W和33.3%。经过1000小时HTRB试验，未发现设备电气故障。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

2015 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP)

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