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2015 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP)最新文献

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Analysis and modeling of a broad-band CPW to slotline transition in THz frequency 太赫兹频率下宽带CPW到槽线转换的分析与建模
2015 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP) Pub Date : 2015-07-01 DOI: 10.1109/IMWS-AMP.2015.7325004
Qiao Hai-dong, Guo Da-lu, L. Xin
{"title":"Analysis and modeling of a broad-band CPW to slotline transition in THz frequency","authors":"Qiao Hai-dong, Guo Da-lu, L. Xin","doi":"10.1109/IMWS-AMP.2015.7325004","DOIUrl":"https://doi.org/10.1109/IMWS-AMP.2015.7325004","url":null,"abstract":"This paper analyzes a brand-band coplanar waveguide (CPW) to slotline transition using slotline ring only in THz band, which is a useful component in uniplanar MMIC applications. Two different types of air bridges were studied, which could suppress the slotline mode in CPW and widen the bandwidth. The paper shows a slotline ring fed by CPW printed in the center conductor of the CPW. Compared with the slotline ring printed in the ground plane, the proposed transitions have additional degrees of freedom, wider bandwidth and reduce the number of air bridges.","PeriodicalId":6625,"journal":{"name":"2015 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP)","volume":"162 1","pages":"1-3"},"PeriodicalIF":0.0,"publicationDate":"2015-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"77151050","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Balun bandpass filter with wide upper stopband using silicon-based integrated passive device technology 采用硅基集成无源器件技术的宽上阻带Balun带通滤波器
2015 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP) Pub Date : 2015-07-01 DOI: 10.1109/IMWS-AMP.2015.7324914
Chia-Feng Chang, Yo-Shen Lin
{"title":"Balun bandpass filter with wide upper stopband using silicon-based integrated passive device technology","authors":"Chia-Feng Chang, Yo-Shen Lin","doi":"10.1109/IMWS-AMP.2015.7324914","DOIUrl":"https://doi.org/10.1109/IMWS-AMP.2015.7324914","url":null,"abstract":"In this work, a compact transformer-coupled balun bandpass filter is presented. The proposed balun bandpass filter features a compact chip size, and it can be designed according to the desired bandpass response and reference impedance. Specifically, a balun bandpass filter with 3rd-order bandpass response is demonstrated using the silicon-based integrated passive device process. The chip size is 2.5 mm×1.8 mm for a center frequency f0 of 2.4 GHz and a bandwidth of about 11.5%. The corresponding electrical size is only about 0.020λ0 × 0.014λ0 at 2.4 GHz. In addition, a wide 40-dB upper stopband from 3.76 up to 14 GHz is achieved.","PeriodicalId":6625,"journal":{"name":"2015 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP)","volume":"8 1","pages":"1-3"},"PeriodicalIF":0.0,"publicationDate":"2015-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"90819848","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Broadband band-pass FSS using patch-wire-patch coupled structures 宽带带通FSS采用贴片-线-贴片耦合结构
2015 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP) Pub Date : 2015-07-01 DOI: 10.1109/IMWS-AMP.2015.7325002
Mingbao Yan, S. Qu, Jiafu Wang, Jie-qiu Zhang, Lin Zheng, Wenjie Wang, Y. Pang, Hang Zhou, Hangying Yuan
{"title":"Broadband band-pass FSS using patch-wire-patch coupled structures","authors":"Mingbao Yan, S. Qu, Jiafu Wang, Jie-qiu Zhang, Lin Zheng, Wenjie Wang, Y. Pang, Hang Zhou, Hangying Yuan","doi":"10.1109/IMWS-AMP.2015.7325002","DOIUrl":"https://doi.org/10.1109/IMWS-AMP.2015.7325002","url":null,"abstract":"In this letter, a new sort of second-order band-pass frequency selective surface (FSS) with patch-wire-patch elements arranged in triangular grid is proposed. The compact FSS has the merits of broadband response. The -0.5dB bandwidth reaches up to 40.3% and the -3dB bandwidth reaches up to 66%. Moreover, the proposed FSS owns its advantages of miniaturization and excellent insensitivity to incident angles within 45° for both TE and TM polarizations. A prototype is fabricated and measured at X-band. Good agreement between the measured and simulated results is achieved.","PeriodicalId":6625,"journal":{"name":"2015 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP)","volume":"50 1","pages":"1-3"},"PeriodicalIF":0.0,"publicationDate":"2015-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"84455419","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
Design of a 2.4GHz power amplifier 2.4GHz功率放大器的设计
2015 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP) Pub Date : 2015-07-01 DOI: 10.1109/IMWS-AMP.2015.7324921
Xiangning Fan, Chen Xu, Jiakai Lu, Zaijun Hua
{"title":"Design of a 2.4GHz power amplifier","authors":"Xiangning Fan, Chen Xu, Jiakai Lu, Zaijun Hua","doi":"10.1109/IMWS-AMP.2015.7324921","DOIUrl":"https://doi.org/10.1109/IMWS-AMP.2015.7324921","url":null,"abstract":"This paper presents the design of a 2.4GHz power amplifier (PA) with high efficiency and the PA is implemented in 0.18μm RF CMOS process. Differential structure is used to reduce the effect of source inductance on the circuit. Output matching network is designed to reduce the chip area. Test results show that with the supply voltage 1V, the maximum output power is about 8dBm, and the maximum PAE is 19%. When the input power is -10dBm, S11 is lower than -23dB, and S22 is lower than -9dB.","PeriodicalId":6625,"journal":{"name":"2015 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP)","volume":"28 1","pages":"1-3"},"PeriodicalIF":0.0,"publicationDate":"2015-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"87005757","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A terahertz quasi-optical detector based on a 3D printing lens 基于3D打印透镜的太赫兹准光学探测器
2015 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP) Pub Date : 2015-07-01 DOI: 10.1109/IMWS-AMP.2015.7324910
Dalu Guo, Jinchao Mou, Jianghui Mo, BaoSong Wang, X. Lv
{"title":"A terahertz quasi-optical detector based on a 3D printing lens","authors":"Dalu Guo, Jinchao Mou, Jianghui Mo, BaoSong Wang, X. Lv","doi":"10.1109/IMWS-AMP.2015.7324910","DOIUrl":"https://doi.org/10.1109/IMWS-AMP.2015.7324910","url":null,"abstract":"A terahertz quasi-optical detector (QOD), consisting of a rectenna chip and a dielectric lens, is presented in this paper. The rectenna is a log-periodic antenna with a Schottky diode at the center, which is fabricated on GaAs substrate. A low cost dielectric lens is designed based on 3D printing technology. By using MLFMM algorithm, the dimensions of the 3D printed lens is optimized for maximum directivity of the antenna on chip.","PeriodicalId":6625,"journal":{"name":"2015 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP)","volume":"2010 1","pages":"1-3"},"PeriodicalIF":0.0,"publicationDate":"2015-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"82592821","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
Dual-band GaN power amplifiers with novel DC biasing networks incorporating offset DSPSL 具有新型直流偏置网络的双频段GaN功率放大器
2015 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP) Pub Date : 2015-07-01 DOI: 10.1109/IMWS-AMP.2015.7324905
L. Gu, W. Che, Shichang Chen, Mi Zhang, Qi Cai, Q. Xue
{"title":"Dual-band GaN power amplifiers with novel DC biasing networks incorporating offset DSPSL","authors":"L. Gu, W. Che, Shichang Chen, Mi Zhang, Qi Cai, Q. Xue","doi":"10.1109/IMWS-AMP.2015.7324905","DOIUrl":"https://doi.org/10.1109/IMWS-AMP.2015.7324905","url":null,"abstract":"This paper presents a novel dual-band DC biasing network and its application in the design of GaN power amplifiers (PA). By integrating offset double sided parallel strip line (DSPSL) which can easily realize high characteristic impedance and thus narrow microstrip line, the proposed biasing network can obtain much higher operation frequency ratio than the conventional design. To demonstrate the new methodology, two dual-band GaN power amplifiers applying the presented dual-band DC biasing network are implemented. The operation frequencies are 1.8/3.5 GHz and 0.9/3.5 GHz. Three-section networks for complex load are used for dual-frequency input and output matching. Simulation and measurement shows good agreement, which fully validate the feasibility and validity of the presented DC bias networks in power amplifier designs.","PeriodicalId":6625,"journal":{"name":"2015 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP)","volume":"42 1","pages":"1-4"},"PeriodicalIF":0.0,"publicationDate":"2015-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"74708648","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
Guiding and focusing of spoof surface plasmon polaritons on conical metal wire with periodically helical grooves 带周期性螺旋槽的锥形金属丝上欺骗表面等离子体激元的引导和聚焦
2015 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP) Pub Date : 2015-07-01 DOI: 10.1109/IMWS-AMP.2015.7324997
P. Ning, Zhuo Li, Liangliang Liu, Bing-zheng Xu, Chen Chen, C. Gu
{"title":"Guiding and focusing of spoof surface plasmon polaritons on conical metal wire with periodically helical grooves","authors":"P. Ning, Zhuo Li, Liangliang Liu, Bing-zheng Xu, Chen Chen, C. Gu","doi":"10.1109/IMWS-AMP.2015.7324997","DOIUrl":"https://doi.org/10.1109/IMWS-AMP.2015.7324997","url":null,"abstract":"In this work, we propose a smooth transition structure from a coaxial waveguide to a helically plasmonic waveguide, which can achieve high-efficiency guiding and focusing of spoof surface plasmon polaritons on the conical metal wire decorated with periodically helical grooves. Numerical simulations of the proposed structure show that the amplitude of surface electric field at the conical endpoint is nearly 30 times higher than that of the feed from 20GHz to 35GHz. The strong energy concentration and superfocusing on the tip of the proposed conical plasmonic waveguide can find important applications in near-field imaging, and sensing in the microwave and terahertz frequencies.","PeriodicalId":6625,"journal":{"name":"2015 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP)","volume":"87 1","pages":"1-4"},"PeriodicalIF":0.0,"publicationDate":"2015-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"75276021","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A new optimization based parasitic parameters extraction method for GaN HEMT with asymmetrical channel structure 基于优化的非对称沟道结构GaN HEMT寄生参数提取新方法
2015 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP) Pub Date : 2015-07-01 DOI: 10.1109/IMWS-AMP.2015.7324920
Ye Yuan, Z. Zhong, Yong-xin Guo, Shanxiang Mu
{"title":"A new optimization based parasitic parameters extraction method for GaN HEMT with asymmetrical channel structure","authors":"Ye Yuan, Z. Zhong, Yong-xin Guo, Shanxiang Mu","doi":"10.1109/IMWS-AMP.2015.7324920","DOIUrl":"https://doi.org/10.1109/IMWS-AMP.2015.7324920","url":null,"abstract":"A good large-signal model relies on the accurate small-signal parameter extraction. In order to get an accurate small signal model, the parasitic parameters must be de-embedded precisely. In this paper, an optimization based parasitic parameters extraction method is proposed. This method take the effect of asymmetrical channel structure at cold-FET condition into consideration.","PeriodicalId":6625,"journal":{"name":"2015 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP)","volume":"72 1","pages":"1-3"},"PeriodicalIF":0.0,"publicationDate":"2015-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"75704552","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Shape trapped-mode resonances in polarization conversion metasurfaces for ultra-sensitive terahertz sensing 用于超灵敏太赫兹传感的偏振转换超表面中的形状捕获模式共振
2015 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP) Pub Date : 2015-07-01 DOI: 10.1109/IMWS-AMP.2015.7325000
J. Yu, S. Sui, Hua Ma, Y. Pang, Ya Fan, S. Qu
{"title":"Shape trapped-mode resonances in polarization conversion metasurfaces for ultra-sensitive terahertz sensing","authors":"J. Yu, S. Sui, Hua Ma, Y. Pang, Ya Fan, S. Qu","doi":"10.1109/IMWS-AMP.2015.7325000","DOIUrl":"https://doi.org/10.1109/IMWS-AMP.2015.7325000","url":null,"abstract":"High quality factor resonances play a significant role in sensor technology. We excite shape trapped-mode resonances in polarization conversion metasurfaces (PCMs) by introducing resonance cavities gaped by two split elliptical ring resonators (SERRs). The quality factor of the resonances can achieve 370.75, and the resonances are angle-independent and polarization independent. Moreover, the resonance frequencies are sensitive to the change of the refractive index of surrounding with the sensitivity of 6.76×103nm/RIU. So the proposed metasurfaces have exciting application prospect in plasmonic sensing.","PeriodicalId":6625,"journal":{"name":"2015 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP)","volume":"9 1","pages":"1-3"},"PeriodicalIF":0.0,"publicationDate":"2015-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"78274893","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
A X-band high power rectangular waveguide bidirectional coupler's design 一种x波段大功率矩形波导双向耦合器的设计
2015 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP) Pub Date : 2015-07-01 DOI: 10.1109/IMWS-AMP.2015.7325020
Hongyan Li, En Li
{"title":"A X-band high power rectangular waveguide bidirectional coupler's design","authors":"Hongyan Li, En Li","doi":"10.1109/IMWS-AMP.2015.7325020","DOIUrl":"https://doi.org/10.1109/IMWS-AMP.2015.7325020","url":null,"abstract":"In this letter, a novel design of X-band rectangular waveguide bidirectional coupler is presented. Through the conversion of coaxial-rectangular waveguide, ladder loading of waveguide and waveguide coupling, the effective methods of matching and coupling are well-improved. This bidirectional coupler has good performance: the directivity is more than 25 dB and the coupling coefficient is 35dB with the deviation of 1 dB from 8.8GHz to 9.9GHz. It can detect a signal of 3KW which is used in high-power microwave measurement system.","PeriodicalId":6625,"journal":{"name":"2015 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP)","volume":"26 1","pages":"1-3"},"PeriodicalIF":0.0,"publicationDate":"2015-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"78542097","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
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