基于优化的非对称沟道结构GaN HEMT寄生参数提取新方法

2015 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP) Pub Date : 2015-07-01 DOI:10.1109/IMWS-AMP.2015.7324920

Ye Yuan, Z. Zhong, Yong-xin Guo, Shanxiang Mu

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引用次数: 3

摘要

一个好的大信号模型依赖于精确的小信号参数提取。为了得到精确的小信号模型，必须精确地去嵌寄生参数。提出了一种基于优化的寄生参数提取方法。该方法考虑了冷场效应管条件下沟道结构不对称的影响。

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A new optimization based parasitic parameters extraction method for GaN HEMT with asymmetrical channel structure

A good large-signal model relies on the accurate small-signal parameter extraction. In order to get an accurate small signal model, the parasitic parameters must be de-embedded precisely. In this paper, an optimization based parasitic parameters extraction method is proposed. This method take the effect of asymmetrical channel structure at cold-FET condition into consideration.

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来源期刊

2015 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP)

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