{"title":"Terahertz superradiation with a cylindrical surface wave structure within a 3-mirror quasi-optical cavity","authors":"Yucong Zhou, Yaxin Zhang","doi":"10.1109/IMWS-AMP.2015.7324917","DOIUrl":"https://doi.org/10.1109/IMWS-AMP.2015.7324917","url":null,"abstract":"In this paper, a cylindrical surface wave-hollow electron beam interaction in a special 3-mirror quasi-optical cavity is presented and explored. The study demonstrates THz free electron superradiation from the interaction of cylindrical surface wave and hollow electron beam that forms a resonance within the structure, with the 3-mirror cavity enhancing the intensity of superradiation. The results show that the cylindrical surface wave-hollow electron beam interaction is much stronger than that of planar surface wave and sheet electron beam. Moreover, this system can work in the high-harmonic superradiation region with relatively high efficiency and low current density.","PeriodicalId":6625,"journal":{"name":"2015 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP)","volume":"29 1","pages":"1-3"},"PeriodicalIF":0.0,"publicationDate":"2015-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"83388021","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Investigation of planar wide band quadruple-mode filter based on substrate integrated waveguide","authors":"C. Zheng, F. Xu, S. Qiu","doi":"10.1109/IMWS-AMP.2015.7325045","DOIUrl":"https://doi.org/10.1109/IMWS-AMP.2015.7325045","url":null,"abstract":"In this paper, a quadruple-mode filter based on the substrate integrated waveguide (SIW) is investigated. The basic element of the filter is a one-third triangular resonator with two electric walls and two virtual magnetic walls. The resonator is called one-third-mode substrate integrated resonator (OTMSIR). The electric field distribution and frequencies of different modes existed in the OTMSIR are studied in order to design a quadruple-mode filter. An elliptical metallic via-hole is selected to realize the filter. A detected ground structure (DGS) is used to restrain other higher-ordered modes. Finally, the design of a 13GHz bandwidth planar quadruple-mode filter is fulfilled.","PeriodicalId":6625,"journal":{"name":"2015 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP)","volume":"8 1","pages":"1-3"},"PeriodicalIF":0.0,"publicationDate":"2015-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"81054814","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"A compact CSRR- based dual-mode patch bandpass filter","authors":"Yong Cheng, Lingpeng Zeng, Wen‐Jun Lu","doi":"10.1109/IMWS-AMP.2015.7325010","DOIUrl":"https://doi.org/10.1109/IMWS-AMP.2015.7325010","url":null,"abstract":"A compact square patch bandpass filter is proposed in the paper. The dual-mode filter uses a square patch resonator with a complementary split ring resonator (CSRR) split as a perturbation element. The CSRR split is embedded in the square patch resonator to perturb field distribution and excite degenerate modes. Using the CSRR structure, the bandpass filter is miniaturized and two transmission zeros in stop-bands are achieved to improve the selectivity of the filter. The impact of the CSRR structure on the band-pass filter is analyzed in detail.","PeriodicalId":6625,"journal":{"name":"2015 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP)","volume":"24 1","pages":"1-3"},"PeriodicalIF":0.0,"publicationDate":"2015-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"83216755","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"An enhancement of the ZigBee wireless sensor network using bluetooth for industrial field measurement","authors":"Bo Qiao, Kaixue Ma","doi":"10.1109/IMWS-AMP.2015.7325007","DOIUrl":"https://doi.org/10.1109/IMWS-AMP.2015.7325007","url":null,"abstract":"The main node (router, coordinator, gateway) of ZigBee based wireless sensor network enhanced by adoption of Bluetooth module is proposed in this paper to provide easy way for industrial field measurement with low-cost and portability. Only a Bluetooth module and basic circuits are required to be added to the original ZigBee network and a simplified physical model is designed and verified in wireless sensor network. The developed main node can be monitored and controlled wirelessly in real time through the designed android based application, which can be setup in a smart phone for communication, monitoring and controlling. The measured distance between the main node and the user is up to 60 meters thus greatly facilitate the industrial field measurement based on the smart phone.","PeriodicalId":6625,"journal":{"name":"2015 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP)","volume":"56 1","pages":"1-3"},"PeriodicalIF":0.0,"publicationDate":"2015-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"78825822","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
S. Sui, J. Yu, Hua Ma, Jie-qiu Zhang, Jiafu Wang, Zhuo Xu, S. Qu
{"title":"Ultra-wideband polarization conversion metasurface based on topology optimal design and geometry tailor","authors":"S. Sui, J. Yu, Hua Ma, Jie-qiu Zhang, Jiafu Wang, Zhuo Xu, S. Qu","doi":"10.1109/IMWS-AMP.2015.7324906","DOIUrl":"https://doi.org/10.1109/IMWS-AMP.2015.7324906","url":null,"abstract":"We presented a topology optimization method based on Genetic Algorithm (GA) combined geometry tailor scheme (GTS) to realize ultra-wideband polarization conversion metasurfaces (UPCM) in microwave range. The present method takes the connectivity condition of the elements into consideration, thereby resulting in good optimization efficiency. As examples, an UPCM is designed by topology optimization, which is composed of the dielectric substrate sandwiched with patched metallic patterns and continuous metal background. Three plasmon resonances are generated by electric and magnetic resonances, which lead to bandwidth expansion of cross-polarization reflection. The simulated results show that the maximum conversion efficiency is nearly 100% at the three plasmon resonance frequencies and the 3dB bandwidth range from 5.66 to 24.68GHz can be achieved for both normally incident x- and y-polarized waves.","PeriodicalId":6625,"journal":{"name":"2015 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP)","volume":"40 1","pages":"1-3"},"PeriodicalIF":0.0,"publicationDate":"2015-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"82048970","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Closed-form expressions for the capacitance of tapered through-silicon vias","authors":"Jinrong Su, Wenmei Zhang","doi":"10.1109/IMWS-AMP.2015.7325022","DOIUrl":"https://doi.org/10.1109/IMWS-AMP.2015.7325022","url":null,"abstract":"Closed-form expressions of the parasitic insulator capacitance and the substrate capacitance for tapered through silicon vias (TSVs) are proposed. The expressions are functions of the geometric and material parameters of TSVs. They also can be applied to the cylindrical TSVs when the slope angle is zero. The two parasitic capacitances increase as the slope angle increases, which implies that the tapered TSVs have larger capacitances compared with the cylindrical TSVs. Computer Simulation Technology Electromagnetic StudioTM (CST EMS) is used to verify the expressions. The results indicate the maximum errors between the expressions and simulation results for the insulator capacitance and the substrate capacitance are 6.27% and 4.15%, respectively.","PeriodicalId":6625,"journal":{"name":"2015 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP)","volume":"12 1","pages":"1-4"},"PeriodicalIF":0.0,"publicationDate":"2015-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"79041856","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Realizability analysis of wideband non-equiripple bandpass filters using parallel-coupled lines","authors":"S. Gao, Sheng Sun","doi":"10.1109/IMWS-AMP.2015.7325006","DOIUrl":"https://doi.org/10.1109/IMWS-AMP.2015.7325006","url":null,"abstract":"In this paper, the realizability of wideband non-equiripple bandpass filter using parallel-coupled lines is extensively investigated. Through the direct synthesis approach for non-equiripple responses, the required characteristic impedances of each involved line sections are explicitly determined. The realizable range of filtering bandwidth is then investigated based on the obtained impedance values. Under the restriction in fabrication and material, the required physical dimensions of the parallel-coupled line section are finally discussed.","PeriodicalId":6625,"journal":{"name":"2015 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP)","volume":"84 1","pages":"1-2"},"PeriodicalIF":0.0,"publicationDate":"2015-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"81081576","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Han Yong, Q. Fang, Fenggang Yan, Lizhong Song, X. Qiao
{"title":"Aperture coupled microstrip antenna with extremely low profile","authors":"Han Yong, Q. Fang, Fenggang Yan, Lizhong Song, X. Qiao","doi":"10.1109/IMWS-AMP.2015.7325016","DOIUrl":"https://doi.org/10.1109/IMWS-AMP.2015.7325016","url":null,"abstract":"An extremely low profile (0.022λc, λc is the wavelength of the central frequency) microstrip antenna with two H-shaped serial coupling slots for bandwidth enhancement is proposed in this paper. Compared with one coupling slot, a broader impedance bandwidth is available by employing two serial slots. Two coupling slots resonate at adjacent frequency that expands the antenna impedance bandwidth. The H-shaped slots, which shift the resonant frequency to the relatively lower band, can reduce the coupling slot length. Key parameters of coupling slots are investigated and discussed by resorting to simulation results. Measurements of the antenna prototype agree well with the simulation results which exhibit 6.63% impedance bandwidth (S11<;-10dB) from 1.415GHz to 1.512GHz. The prototype exhibits a peak gain of 5.79 dBi and the 3dB beam width of 56° and 112° in the E- and H-planes, respectively, besides the cross polarization level of -20dB down from the co-polarization.","PeriodicalId":6625,"journal":{"name":"2015 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP)","volume":"138 1","pages":"1-3"},"PeriodicalIF":0.0,"publicationDate":"2015-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"77415392","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"RF performance evaluation of microstrip lines printed on flexible polyethylene terephthalate (PET) films","authors":"Jingchen Wang, S. Lam, E. Lim","doi":"10.1109/IMWS-AMP.2015.7324924","DOIUrl":"https://doi.org/10.1109/IMWS-AMP.2015.7324924","url":null,"abstract":"This paper reports an exploratory study of implementing microstrip lines in flexible electronics technology by printing conductive tracks on flexible polyethylene terephthalate (PET) films. Based on the material properties of inkjet printable nanoparticles and of PET films published in the literature, electromagnetic-field simulations with COMSOL are used to determine the radio-frequency (RF) performance of the microstrip lines. With a PET film thickness of 250 μm, a conductive track with a linewidth of 565 μm and a conductive layer thickness of 20 μm above a ground plane gives a characteristic impedance of 50 Ω as a microstrip line. Because of the large thickness of the conductive layer relative to the skin depth, the insertion loss at 1 GHz for such microstrip lines can be as small as 0.25 dB/cm even with the conductivity as low as 5×105 S/m. With the 50-Ω microstrip line design, the characteristic impedance is fairly independent of the conductivity of the printed conductor. Printing resolution of about 100 μm is good enough for printing microstrip lines on PET films of normal thickness.","PeriodicalId":6625,"journal":{"name":"2015 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP)","volume":"109 5","pages":"1-3"},"PeriodicalIF":0.0,"publicationDate":"2015-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"91424574","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Jie Zheng, Dawei Wang, Wensheng Zhao, Gaofeng Wang, W. Yin
{"title":"Modeling of TSV-based solenoid inductors for 3-D integration","authors":"Jie Zheng, Dawei Wang, Wensheng Zhao, Gaofeng Wang, W. Yin","doi":"10.1109/IMWS-AMP.2015.7324959","DOIUrl":"https://doi.org/10.1109/IMWS-AMP.2015.7324959","url":null,"abstract":"Circuit model for TSV-based solenoid inductors is presented and investigated. Based on the measurement, the related lumped circuit elements can be extracted, and they are independent of the operating frequency by virtue of the RL ladder. Hence, the circuit model is compatible with the SPICE simulators. Based on the circuit model, the impacts of design parameters on the quality factor and inductance are studied. Finally, the frequency-thermal analysis of TSV-based solenoid inductors is carried out.","PeriodicalId":6625,"journal":{"name":"2015 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP)","volume":"1 1","pages":"1-3"},"PeriodicalIF":0.0,"publicationDate":"2015-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"91119600","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}