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Patterning with Organized Molecules 有组织分子的模式
微电子制造学报 Pub Date : 2021-01-01 DOI: 10.33079/jomm.21040202
M. Neisser
{"title":"Patterning with Organized Molecules","authors":"M. Neisser","doi":"10.33079/jomm.21040202","DOIUrl":"https://doi.org/10.33079/jomm.21040202","url":null,"abstract":"","PeriodicalId":66020,"journal":{"name":"微电子制造学报","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2021-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"69492617","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
New Progress of China's Integrated Circuit Design Industry 中国集成电路设计产业的新进展
微电子制造学报 Pub Date : 2021-01-01 DOI: 10.33079/jomm.21040203
Q. Yan, Huwen Ding
{"title":"New Progress of China's Integrated Circuit Design Industry","authors":"Q. Yan, Huwen Ding","doi":"10.33079/jomm.21040203","DOIUrl":"https://doi.org/10.33079/jomm.21040203","url":null,"abstract":"","PeriodicalId":66020,"journal":{"name":"微电子制造学报","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2021-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"69492623","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Improvement of Environment Stability of an i-Line Chemically Amplified Photoresist i-线化学放大光刻胶环境稳定性的改善
微电子制造学报 Pub Date : 2021-01-01 DOI: 10.33079/jomm.21040201
Haibo Li, Qiang Yang, Jia Sun, Jie Li, Meng Guo, Bing Li
{"title":"Improvement of Environment Stability of an i-Line Chemically Amplified Photoresist","authors":"Haibo Li, Qiang Yang, Jia Sun, Jie Li, Meng Guo, Bing Li","doi":"10.33079/jomm.21040201","DOIUrl":"https://doi.org/10.33079/jomm.21040201","url":null,"abstract":"","PeriodicalId":66020,"journal":{"name":"微电子制造学报","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2021-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"69492613","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Nano-Electronic Simulation Software (NESS): A Novel Open-Source TCAD Simulation Environment 纳米电子仿真软件(NESS):一种新型的开源TCAD仿真环境
微电子制造学报 Pub Date : 2020-12-30 DOI: 10.33079/JOMM.20030407)
C. Medina-Bailón, T. Dutta, F. Adamu-Lema, A. Rezaei, D. Nagy, V. Georgiev, A. Asenov
{"title":"Nano-Electronic Simulation Software (NESS): A Novel Open-Source TCAD Simulation Environment","authors":"C. Medina-Bailón, T. Dutta, F. Adamu-Lema, A. Rezaei, D. Nagy, V. Georgiev, A. Asenov","doi":"10.33079/JOMM.20030407)","DOIUrl":"https://doi.org/10.33079/JOMM.20030407)","url":null,"abstract":"This paper presents the latest status of the open source advanced TCAD simulator called Nano-Electronic Simulation Software (NESS) which is currently under development at the Device Modeling Group of the University of Glasgow. NESS is designed with the main aim to provide an open, flexible, and easy to use simulation environment where users are able not only to perform numerical simulations but also to develop and implement new simulation methods and models. Currently, NESS is organized into two main components: the structure generator and a collection of different numerical solvers; which are linked to supporting components such as an effective mass extractor and materials database. This paper gives a brief overview of each of the components by describing their main capabilities, structure, and theory behind each one of them. Moreover, to illustrate the capabilities of each component, here we have given examples considering various device structures, architectures, materials, etc. at multiple simulation conditions. We expect that NESS will prove to be a great tool for both conventional as well as exploratory device research programs and projects.","PeriodicalId":66020,"journal":{"name":"微电子制造学报","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2020-12-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"48624837","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 6
Influence of Chemical Stability on the Fabrication of MnGa-based Devices 化学稳定性对MnGa基器件制备的影响
微电子制造学报 Pub Date : 2019-08-18 DOI: 10.33079/jomm.19020303
Lijun Zhu, Jianhua Zhao
{"title":"Influence of Chemical Stability on the Fabrication of MnGa-based Devices","authors":"Lijun Zhu, Jianhua Zhao","doi":"10.33079/jomm.19020303","DOIUrl":"https://doi.org/10.33079/jomm.19020303","url":null,"abstract":"Ferromagnetic films of L10-ordered MnGa have shown promise not only in the applications in ultrahigh-density magnetic recording and spintronic memories, oscillators, and sensors, but also in controllable studies of novel electrical transport phenomena. However, the stability of MnGa in chemicals and oxygen plasma that are commonly used in the standard micro-/nano-fabrication process has unsettled. In this work, we report a systematic study on the chemical stability of the MnGa films in acids, acetone, ethanol, deionized water, tetramethylammonium hydroxide (TMAOH) and oxygen plasma. We find that MnGa is very stable in acetone and ethanol, while can be attacked substantially if soaked in TMAOH solution for sufficiently long time. Deionized water and acids (e.g., HCl, H3PO4 and H2SO4 solutions) attack MnGa violently and should be avoided whenever possible. In addition, oxygen plasma can passivate the MnGa surface by oxidizing the surface. These results provide important information for the fabrication and the integration of MnGa based spintronic devices.","PeriodicalId":66020,"journal":{"name":"微电子制造学报","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2019-08-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"47040814","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Patterning Defect Study for Process Integration Engineering Using Pattern Fidelity Monitoring with Review SEM Images 基于扫描电镜图像的模式保真度监测在工艺集成工程中的模式缺陷研究
微电子制造学报 Pub Date : 2019-01-01 DOI: 10.33079/JOMM.19020203
Yu Zhang, A. Vikram, Ming Tian, Tianpeng Guan, J. Leng, Baojun Zhao, Lei Yan, Wei Hu, Guojie Chen, Hui Wang, Gary Zhang, Wenkui Liao
{"title":"Patterning Defect Study for Process Integration Engineering Using Pattern Fidelity Monitoring with Review SEM Images","authors":"Yu Zhang, A. Vikram, Ming Tian, Tianpeng Guan, J. Leng, Baojun Zhao, Lei Yan, Wei Hu, Guojie Chen, Hui Wang, Gary Zhang, Wenkui Liao","doi":"10.33079/JOMM.19020203","DOIUrl":"https://doi.org/10.33079/JOMM.19020203","url":null,"abstract":"","PeriodicalId":66020,"journal":{"name":"微电子制造学报","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2019-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"69492374","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Nitridation-Etch of Silicon Oxide in Fluorocarbon/Nitrogen Plasma: A Computational Study 碳氟/氮等离子体中氧化硅氮化蚀刻的计算研究
微电子制造学报 Pub Date : 2019-01-01 DOI: 10.33079/JOMM.19020103
Du Zhang, Yu-Hao Tsai, Hojin Kim, Mingmei Wang
{"title":"Nitridation-Etch of Silicon Oxide in Fluorocarbon/Nitrogen Plasma: A Computational Study","authors":"Du Zhang, Yu-Hao Tsai, Hojin Kim, Mingmei Wang","doi":"10.33079/JOMM.19020103","DOIUrl":"https://doi.org/10.33079/JOMM.19020103","url":null,"abstract":"","PeriodicalId":66020,"journal":{"name":"微电子制造学报","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2019-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"69492303","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Current Status of the Integrated Circuit Industry in China ― IC Special Equipment Industry 中国集成电路产业现状-集成电路专用设备产业
微电子制造学报 Pub Date : 2019-01-01 DOI: 10.33079/jomm.19020105
Lithotechsolutions.org
{"title":"Current Status of the Integrated Circuit Industry in China ― IC Special Equipment Industry","authors":"Lithotechsolutions.org","doi":"10.33079/jomm.19020105","DOIUrl":"https://doi.org/10.33079/jomm.19020105","url":null,"abstract":"","PeriodicalId":66020,"journal":{"name":"微电子制造学报","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2019-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"69492319","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Hard IP Core Nondestructive Testing Technology 硬IP核无损检测技术
微电子制造学报 Pub Date : 2019-01-01 DOI: 10.33079/jomm.19020201
Kun Yu, Hua Wang
{"title":"Hard IP Core Nondestructive Testing Technology","authors":"Kun Yu, Hua Wang","doi":"10.33079/jomm.19020201","DOIUrl":"https://doi.org/10.33079/jomm.19020201","url":null,"abstract":"","PeriodicalId":66020,"journal":{"name":"微电子制造学报","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2019-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"69492357","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Dual Micro-power 150mA Ultra LDO CMOS Regulator with fast startup 双微功率150mA超LDO CMOS调节器，快速启动
微电子制造学报 Pub Date : 2019-01-01 DOI: 10.33079/jomm.19020402
Pengyu Zheng, Hai Shi Wang
{"title":"Dual Micro-power 150mA Ultra LDO CMOS Regulator with fast startup","authors":"Pengyu Zheng, Hai Shi Wang","doi":"10.33079/jomm.19020402","DOIUrl":"https://doi.org/10.33079/jomm.19020402","url":null,"abstract":"","PeriodicalId":66020,"journal":{"name":"微电子制造学报","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2019-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"69492481","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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