化学稳定性对MnGa基器件制备的影响

Lijun Zhu, Jianhua Zhao
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引用次数: 0

摘要

l10 -有序MnGa铁磁薄膜不仅在超高密度磁记录和自旋电子存储器、振荡器和传感器中有应用前景,而且在新型电输运现象的可控研究中也有应用前景。然而,在标准微/纳米制造工艺中常用的化学物质和氧等离子体中,MnGa的稳定性尚未确定。在这项工作中,我们系统地研究了MnGa薄膜在酸、丙酮、乙醇、去离子水、四甲基氢氧化铵(TMAOH)和氧等离子体中的化学稳定性。我们发现MnGa在丙酮和乙醇中非常稳定,但如果在TMAOH溶液中浸泡足够长的时间,则会受到严重的侵蚀。去离子水和酸(如HCl, H3PO4和H2SO4溶液)对MnGa有强烈的攻击,应尽可能避免使用。此外,氧等离子体可以通过氧化MnGa表面使其钝化。这些结果为基于MnGa的自旋电子器件的制造和集成提供了重要的信息。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Influence of Chemical Stability on the Fabrication of MnGa-based Devices
Ferromagnetic films of L10-ordered MnGa have shown promise not only in the applications in ultrahigh-density magnetic recording and spintronic memories, oscillators, and sensors, but also in controllable studies of novel electrical transport phenomena. However, the stability of MnGa in chemicals and oxygen plasma that are commonly used in the standard micro-/nano-fabrication process has unsettled. In this work, we report a systematic study on the chemical stability of the MnGa films in acids, acetone, ethanol, deionized water, tetramethylammonium hydroxide (TMAOH) and oxygen plasma. We find that MnGa is very stable in acetone and ethanol, while can be attacked substantially if soaked in TMAOH solution for sufficiently long time. Deionized water and acids (e.g., HCl, H3PO4 and H2SO4 solutions) attack MnGa violently and should be avoided whenever possible. In addition, oxygen plasma can passivate the MnGa surface by oxidizing the surface. These results provide important information for the fabrication and the integration of MnGa based spintronic devices.
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