2016 IEEE MTT-S International Microwave Symposium (IMS)最新文献_第7页

Linearization of radio-over-fiber systems using directly modulated and electro-absorption modulator integrated lasers 使用直接调制和电吸收调制器集成激光器的光纤无线电系统的线性化

2016 IEEE MTT-S International Microwave Symposium (IMS) Pub Date : 2016-05-22 DOI: 10.1109/MWSYM.2016.7540322

R. Zhu, Xiupu Zhang, Dongya Shen

引用次数: 3

Transmission-line metamaterials and their relation to the transmission-line matrix method 传输在线超材料及其与传输在线矩阵方法的关系

2016 IEEE MTT-S International Microwave Symposium (IMS) Pub Date : 2016-05-22 DOI: 10.1109/MWSYM.2016.7540095

G. Eleftheriades

引用次数: 1

Electrically tunable bandpass filtering balun on engineered substrate embedded with patterned Permalloy thin film 电可调谐带通滤波平衡器在工程衬底嵌入图案的坡莫合金薄膜

2016 IEEE MTT-S International Microwave Symposium (IMS) Pub Date : 2016-05-22 DOI: 10.1109/MWSYM.2016.7540368

Yujia Peng, Tengxing Wang, Y. Huang, Wei Jiang, Guoan Wang

{"title":"Electrically tunable bandpass filtering balun on engineered substrate embedded with patterned Permalloy thin film","authors":"Yujia Peng, Tengxing Wang, Y. Huang, Wei Jiang, Guoan Wang","doi":"10.1109/MWSYM.2016.7540368","DOIUrl":"https://doi.org/10.1109/MWSYM.2016.7540368","url":null,"abstract":"An electrically tunable bandpass filtering balun (BPF-Balun) on engineered substrate embedded with patterned Permalloy (Py) thin film is designed and implemented for the first time. The tunability of the BPF-Balun is realized through tuning RF characteristics of the engineered substrate. Embedded with patterned Py thin film which has high and current-dependent permeability, the developed engineered substrate has electrically tunable equivalent permeability. The center frequency of BPF-Balun on engineered substrate thus becomes tunable with different DC current. Patterning of Py film is analyzed and utilized to increase its FMR up to GHz range. The proposed BPF-Balun is fabricated on Rogers 4350 substrate while the engineered substrate is developed separately with high resistivity silicon embedded with patterned Py thin film. Tunable BPF-Balun is implemented through bonding the Rogers 4350 on the top of engineered substrate. The measured results show that the center frequency of the BPF-Balun can be tuned continuously from 1.49GHz to 1.545GHz with applied DC current adjusted from 0mA to 500mA. The measured magnitude imbalance and phase difference of the two balanced outputs are within 0.5dB and 180°± 5° for the whole frequency range. Larger tunability can be achieved with patterned Py thin film with optimized thickness.","PeriodicalId":6554,"journal":{"name":"2016 IEEE MTT-S International Microwave Symposium (IMS)","volume":"62 1","pages":"1-3"},"PeriodicalIF":0.0,"publicationDate":"2016-05-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"88830019","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 11

A WiFi tracking device printed directly on textile for wearable electronics applications 一种直接印在纺织品上的WiFi跟踪设备，用于可穿戴电子应用

2016 IEEE MTT-S International Microwave Symposium (IMS) Pub Date : 2016-05-22 DOI: 10.1109/MWSYM.2016.7540334

Bauyrzhan Krykpayev, M. Farooqui, R. M. Bilal, A. Shamim

{"title":"A WiFi tracking device printed directly on textile for wearable electronics applications","authors":"Bauyrzhan Krykpayev, M. Farooqui, R. M. Bilal, A. Shamim","doi":"10.1109/MWSYM.2016.7540334","DOIUrl":"https://doi.org/10.1109/MWSYM.2016.7540334","url":null,"abstract":"Despite the abundance of localization applications, the tracking devices have never been truly realized in E-textiles. Unobtrusive and flexible integration of tracking devices with clothes is difficult to achieve with standard PCB-based devices. An attractive option would be direct printing of circuit layout on the textile itself, negating the use of hard PCB materials. However, due to high surface roughness and porosity of textiles, efficient and reliable printing of electronics on textile has remained elusive. In this paper, an interface layer is first printed on the textile to facilitate the printing of a complete localization circuit and antenna for the first time. The tracking device utilizes WiFi to determine the wearer's position and can display this information on any internet-enabled device, such as smart phone. The device is small enough (55 mm × 45 mm) and lightweight (22g with 500 mAh battery) for people to comfortably wear it and can be easily concealed in case discretion is required. The device operates at 2.4GHz with communication range of up to 55 meters, and localization accuracy of up to 8 meters.","PeriodicalId":6554,"journal":{"name":"2016 IEEE MTT-S International Microwave Symposium (IMS)","volume":"2 1","pages":"1-4"},"PeriodicalIF":0.0,"publicationDate":"2016-05-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"88863043","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 6

Mixed-mode resonator using TE101 cavity mode and TE01d dielectric mode 混合模式谐振器采用TE101腔模式和TE01d介电模式

2016 IEEE MTT-S International Microwave Symposium (IMS) Pub Date : 2016-05-22 DOI: 10.1109/MWSYM.2016.7540064

C. Tomassoni, S. Bastioli, R. Snyder

引用次数: 6

Lateral-wave spurious-modes elimination in switchable ferroelectric BST-on-Si composite FBARs 可切换铁电BST-on-Si复合fbar中的侧波杂散模式消除

2016 IEEE MTT-S International Microwave Symposium (IMS) Pub Date : 2016-05-22 DOI: 10.1109/MWSYM.2016.7540120

Seungku Lee, M. Koohi, A. Mortazawi

引用次数: 11

A concurrent 2.15/3.4 GHz dual-band Doherty power amplifier with extended fractional bandwidth 一种扩展分数带宽的并发2.15/3.4 GHz双频Doherty功率放大器

2016 IEEE MTT-S International Microwave Symposium (IMS) Pub Date : 2016-05-22 DOI: 10.1109/MWSYM.2016.7540189

Mingming Liu, H. Golestaneh, S. Boumaiza

引用次数: 23

650-W high-efficiency amplifier for 704 MHz 650w的704mhz高效率放大器

2016 IEEE MTT-S International Microwave Symposium (IMS) Pub Date : 2016-05-22 DOI: 10.1109/MWSYM.2016.7540407

F. Raab

引用次数: 4

Advances in the Super-Lattice Castellated Field Effect Transistor (SLCFET) for wideband low loss RF switching applications 用于宽带低损耗射频开关的超晶格场效应晶体管(SLCFET)的研究进展

2016 IEEE MTT-S International Microwave Symposium (IMS) Pub Date : 2016-05-22 DOI: 10.1109/MWSYM.2016.7540023

R. Howell, E. Stewart, R. Freitag, J. Parke, B. Nechay, M. King, Shalini Gupta, M. Snook, I. Wathuthanthri, Parrish Ralston, H. G. Henry

{"title":"Advances in the Super-Lattice Castellated Field Effect Transistor (SLCFET) for wideband low loss RF switching applications","authors":"R. Howell, E. Stewart, R. Freitag, J. Parke, B. Nechay, M. King, Shalini Gupta, M. Snook, I. Wathuthanthri, Parrish Ralston, H. G. Henry","doi":"10.1109/MWSYM.2016.7540023","DOIUrl":"https://doi.org/10.1109/MWSYM.2016.7540023","url":null,"abstract":"The Super-Lattice Castellated Field Effect Transistor (SLCFET) uses a super-lattice in the channel region to form multiple parallel current paths in conjunction with castellations etched into that super-lattice to provide a sidewall gate structure. The sidewall gate permits the gate applied electric field to penetrate between the parallel 2DEG layers, allowing the carriers to be depleted out prior to avalanche breakdown within the material, as would occur with a conventional gate structure. Using an AlGaN/GaN super-lattice, we report on this method as a way to scale RF switch performance, decreasing ON resistance without significantly increasing OFF capacitance, with a median measured ON resistance of 0.38 Ω-mm and a median measured OFF capacitance of 0.21 pF/mm, leading to an RF switch figure of merit, FCO=2.0 THz. 90/10 and 10/90 fall and rise times for the SLCFET have been measured to be faster than 100 nsec, while the RF power handling for a series SLCFET has been measured at 10 GHz to be greater than 10 W without loss compression. Wideband SPDT RF switch performance over a 0.5-20 GHz bandwidth with <;|-0.3| dB of insertion loss and >|-30| dB of isolation has been achieved.","PeriodicalId":6554,"journal":{"name":"2016 IEEE MTT-S International Microwave Symposium (IMS)","volume":"58 1","pages":"1-3"},"PeriodicalIF":0.0,"publicationDate":"2016-05-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"81035297","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 11

A UHF rectifier with one octave bandwidth based on a non-uniform transmission line 一种基于非均匀传输线的一倍频宽的超高频整流器

2016 IEEE MTT-S International Microwave Symposium (IMS) Pub Date : 2016-05-22 DOI: 10.1109/MWSYM.2016.7540083

Ferran Bolós, D. Belo, A. Georgiadis

引用次数: 32