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Reproducible broadband measurement for cytoplasm capacitance of a biological cell 生物细胞细胞质电容的可重复宽带测量
2016 IEEE MTT-S International Microwave Symposium (IMS) Pub Date : 2016-05-22 DOI: 10.1109/MWSYM.2016.7540262
X. Ma, X. Du, C. Multari, Y. Ning, X. Luo, V. Gholizadeh, C. Palego, X. Cheng, J. Hwang
{"title":"Reproducible broadband measurement for cytoplasm capacitance of a biological cell","authors":"X. Ma, X. Du, C. Multari, Y. Ning, X. Luo, V. Gholizadeh, C. Palego, X. Cheng, J. Hwang","doi":"10.1109/MWSYM.2016.7540262","DOIUrl":"https://doi.org/10.1109/MWSYM.2016.7540262","url":null,"abstract":"Using a coplanar waveguide with a series gap in conjunction with dielectrophoresis trapping, consecutive S-parameter measurements between 0.5 and 20 GHz were quickly performed with and without a Jurkat cell trapped to compensate for a relatively noisy and drifting background. Based on sixteen measurements repeated on eight live cells and eight dead cells, differences in both return and insertion losses show two distinct distributions indicating either return loss or insertion loss alone can be used to distinguish a live cell from a dead one. Further, since the frequency dependence is generally linear or absent, discrete-frequency measurement (as opposed to sweep-frequency measurement) of return or insertion loss may suffice. If proven statistically by a much larger number of cells, this should greatly speed up the measurement to facilitate its eventual field use.","PeriodicalId":6554,"journal":{"name":"2016 IEEE MTT-S International Microwave Symposium (IMS)","volume":"6 1","pages":"1-4"},"PeriodicalIF":0.0,"publicationDate":"2016-05-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"87405674","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 20
Wrist location by wearable bracelet belt resonators 通过可穿戴手镯带谐振器进行手腕定位
2016 IEEE MTT-S International Microwave Symposium (IMS) Pub Date : 2016-05-22 DOI: 10.1109/MWSYM.2016.7540018
Chieh-Sen Lee, Chun-Yih Wu, Y. Kuo
{"title":"Wrist location by wearable bracelet belt resonators","authors":"Chieh-Sen Lee, Chun-Yih Wu, Y. Kuo","doi":"10.1109/MWSYM.2016.7540018","DOIUrl":"https://doi.org/10.1109/MWSYM.2016.7540018","url":null,"abstract":"This paper presents the preliminary evaluation of a wearable 1-dimensional frequency multiplexed sensor array using microstrip-line-excited complementary split-ring resonators (CSRRs) module for detecting the location of the wrist. The sensor array was fabricated on a cylindrical structure, and a scheme was devised by which to measure relative changes in the location of the wrist within a wearable devise. Unlike previous devices that record changes in the resonant frequency as well as the depth of the transmission notch, the proposed method requires only the magnitude of the transmission coefficient (dB) at a specified frequency, thereby avoiding the need to track shifts in the resonance frequency. Experiment results demonstrate the performance of the sensor in detecting relative changes in distance (1.16 dB/mm) from 0 - 20mm.","PeriodicalId":6554,"journal":{"name":"2016 IEEE MTT-S International Microwave Symposium (IMS)","volume":"34 1","pages":"1-3"},"PeriodicalIF":0.0,"publicationDate":"2016-05-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"90741232","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
A V-band CPW bandpass filter with controllable transmission zeros in integrated passive devices (IPD) technology 集成无源器件(IPD)技术中具有可控传输零点的v波段CPW带通滤波器
2016 IEEE MTT-S International Microwave Symposium (IMS) Pub Date : 2016-05-22 DOI: 10.1109/MWSYM.2016.7540147
Yin-Cheng Chang, Ping-Yi Wang, S. Hsu, Ta-Yeh Lin, Chaoping Hsieh, D. Chang
{"title":"A V-band CPW bandpass filter with controllable transmission zeros in integrated passive devices (IPD) technology","authors":"Yin-Cheng Chang, Ping-Yi Wang, S. Hsu, Ta-Yeh Lin, Chaoping Hsieh, D. Chang","doi":"10.1109/MWSYM.2016.7540147","DOIUrl":"https://doi.org/10.1109/MWSYM.2016.7540147","url":null,"abstract":"A 60 GHz CPW bandpass filter (BPF) with two controllable transmission zeros is proposed. The BPF, which utilizes the spiral defected ground structure (DGS) and interdigital structure as the resonators, is designed and fabricated on the integrated passive device (IPD) technology. The proposed filter has the measured 3dB bandwidth of 8.53 GHz (56.54-65.07 GHz) with the insertion loss of 4.84 dB including pads. The center frequency is 60.81 GHz, and the maximum return loss is better than 25 dB in the passband. A good agreement between the simulated and measured results has been shown. By comparing to other reported Si-based V-band BPFs, this work achieves a good fractional BW (FBW) of 14% with a compact size of 0.18mm2.","PeriodicalId":6554,"journal":{"name":"2016 IEEE MTT-S International Microwave Symposium (IMS)","volume":"14 1","pages":"1-3"},"PeriodicalIF":0.0,"publicationDate":"2016-05-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"90981461","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 11
Hybrid cylindrical radial superlattice conductor-based air-lifted RF inductors with ultra-high quality factor for UWB and K-bands 超宽带和k波段超高品质因数混合型圆柱形径向超晶格导体气举射频电感
2016 IEEE MTT-S International Microwave Symposium (IMS) Pub Date : 2016-05-22 DOI: 10.1109/MWSYM.2016.7539971
Arian Rahimi, Y. Yoon
{"title":"Hybrid cylindrical radial superlattice conductor-based air-lifted RF inductors with ultra-high quality factor for UWB and K-bands","authors":"Arian Rahimi, Y. Yoon","doi":"10.1109/MWSYM.2016.7539971","DOIUrl":"https://doi.org/10.1109/MWSYM.2016.7539971","url":null,"abstract":"This paper reports the state-of-the-art air-lifted radio frequency (RF) inductors made of hybrid cylindrical radial superlattice (h-CRS) conductors with a gold core featuring ultra-high quality factor (Q-factor) in ultra wideband (UWB) and K-bands. A CRS conductor is made of paired Cu/NiFe layers with a thickness of each pair of 150 nm/25 nm, respectively, using a DC/RF sputtering thin film deposition process. The negative permeability of NiFe thin films above their ferromagnetic resonance frequency is used to cancel the eddy currents inside conductors and reduce the conductor loss in Ku and K-bands. The directional thin film deposition aspect of the used fabrication method for the CRS conductors results in a hybrid conductor structure comprising both solid and multi-layer superlattice parts leading to dual-band high-Q characteristics in UWB and K bands. The intrinsic radial shape of the utilized CRS conductors with the uniform and closed boundaries make them superior for the super compact RF low loss conductors. In result of using CRS conductors with ultra-thin layers and the air-lifted structure with suppressed dielectric losses, a record-breaking Q-factor of greater than 80 at 20 GHz is achieved for 1.8 nH inductors.","PeriodicalId":6554,"journal":{"name":"2016 IEEE MTT-S International Microwave Symposium (IMS)","volume":"1 1","pages":"1-3"},"PeriodicalIF":0.0,"publicationDate":"2016-05-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"89864227","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Active single pole double throw switches for D-Band applications d波段应用的有源单极双掷开关
2016 IEEE MTT-S International Microwave Symposium (IMS) Pub Date : 2016-05-22 DOI: 10.1109/MWSYM.2016.7539969
D. Muller, U. Lewark, A. Tessmann, A. Leuther, T. Zwick, I. Kallfass
{"title":"Active single pole double throw switches for D-Band applications","authors":"D. Muller, U. Lewark, A. Tessmann, A. Leuther, T. Zwick, I. Kallfass","doi":"10.1109/MWSYM.2016.7539969","DOIUrl":"https://doi.org/10.1109/MWSYM.2016.7539969","url":null,"abstract":"This paper presents active single pole double throw (SPDT) switches, based on a novel compact transistor unit cell, working in the D-Band (110-170GHz) frequency range. Two switches for the transmit- and receive side were designed and manufactured using a GaAs mHEMT process. The unit cell consists of the integration of a common-gate stage for loss compensation and a shunt-stage to achieve high isolation. On-wafer measurement results of the processed monolithic microwave integrated circuits (MMICs) SPDT switches show a maximum gain of 3.2dB and 3.3dB with 3dB bandwidths of 47GHz and 38.7GHz, respectively. Within the 3dB bandwidth the isolation of both switches is higher than 21.5dB.","PeriodicalId":6554,"journal":{"name":"2016 IEEE MTT-S International Microwave Symposium (IMS)","volume":"10 1","pages":"1-4"},"PeriodicalIF":0.0,"publicationDate":"2016-05-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"90283130","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 6
Blazed metasurface grating: The planar equivalent of a sawtooth grating 烧蚀超表面光栅:锯齿光栅的平面等价物
2016 IEEE MTT-S International Microwave Symposium (IMS) Pub Date : 2016-05-22 DOI: 10.1109/MWSYM.2016.7540270
Xiaqiang Li, M. Memarian, Kirti Dhwaj, T. Itoh
{"title":"Blazed metasurface grating: The planar equivalent of a sawtooth grating","authors":"Xiaqiang Li, M. Memarian, Kirti Dhwaj, T. Itoh","doi":"10.1109/MWSYM.2016.7540270","DOIUrl":"https://doi.org/10.1109/MWSYM.2016.7540270","url":null,"abstract":"The blazing behavior of non-planar sawtooth gratings are mimicked with a planar metasurface. We show that with an appropriate design, an equivalent planar “blazed metasurface” can reflect most of the incident power back in the path of incidence, and with reduced power reflected in the specular direction. We then utilize such metasurface to create high rejection stopband in a waveguide, by lining the sidewall of the guide with this metasurface. The results are justified by theory, as well as simulations and measurements. The blazed metasurface may find various applications in microwaves up to optical frequencies, e.g. for stopband filters, Fabry-Perot resonator mirrors, or replacing corner reflectors.","PeriodicalId":6554,"journal":{"name":"2016 IEEE MTT-S International Microwave Symposium (IMS)","volume":"3 1","pages":"1-3"},"PeriodicalIF":0.0,"publicationDate":"2016-05-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"90302665","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 23
Self-outphasing Chireix power amplifier using device input impedance variation 利用器件输入阻抗变化的自失相功率放大器
2016 IEEE MTT-S International Microwave Symposium (IMS) Pub Date : 2016-05-22 DOI: 10.1109/MWSYM.2016.7540027
Haedong Jang, Richard Wilson, T. Canning, David Seebacher, C. Schuberth, B. Arigong
{"title":"Self-outphasing Chireix power amplifier using device input impedance variation","authors":"Haedong Jang, Richard Wilson, T. Canning, David Seebacher, C. Schuberth, B. Arigong","doi":"10.1109/MWSYM.2016.7540027","DOIUrl":"https://doi.org/10.1109/MWSYM.2016.7540027","url":null,"abstract":"A new outphasing signal splitter for a radio frequency (RF) single input Chireix power amplifier without using digital signal processing is introduced. Input signal phase control versus power for outphasing operation is obtained by using only a linear circuit, exploiting the input impedance variation of non-ideal devices. A 52.6 dBm peak output power, 6 dB back-off Chireix power amplifier is built operating at 2.17 GHz. More than 50% drain efficiency is maintained over 5.7 dB output power back-off range.","PeriodicalId":6554,"journal":{"name":"2016 IEEE MTT-S International Microwave Symposium (IMS)","volume":"330 1","pages":"1-4"},"PeriodicalIF":0.0,"publicationDate":"2016-05-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"76903023","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 10
Advanced envelope delta-sigma transmitter architecture with PLM power amplifier for multi-standard applications 先进的包络δ - σ发射机架构与多标准应用的PLM功率放大器
2016 IEEE MTT-S International Microwave Symposium (IMS) Pub Date : 2016-05-22 DOI: 10.1109/MWSYM.2016.7540386
Maryam Jouzdani, M. Helaoui, F. Ghannouchi
{"title":"Advanced envelope delta-sigma transmitter architecture with PLM power amplifier for multi-standard applications","authors":"Maryam Jouzdani, M. Helaoui, F. Ghannouchi","doi":"10.1109/MWSYM.2016.7540386","DOIUrl":"https://doi.org/10.1109/MWSYM.2016.7540386","url":null,"abstract":"This paper presents a new modified envelope delta-sigma (DS) based transmitter architecture with good linearity and efficiency performance without applying any linearization techniques. For the proposed transmitter setup, a pulsed load modulation (PLM) amplifier is implemented and used for its high power efficiency at the back-off power levels. For high efficiency performance of the PA and maintaining the linearity of the system, an envelope DS modulator is utilized to quantized standard signals prior to the PA. Simulation results also show that higher coding efficiency of the quantized signal is achievable employing the envelope DS modulator instead of its Cartesian DS modulator counterpart. To validate the proposed technique, a transmitter prototype is implemented and tested with standard signals with various pick-to-average power ratios (PAPRs). Using this transmitter setup for a 3MHz bandwidth LTE signal with 7dB PAPR and a WiMAX signal with 1.25MHz bandwidth and 7.9dB PAPR, the average drain efficiency of about 45% and 44% are obtained, respectively, at the average output powers of 24.8dBm and 25.7dBm.","PeriodicalId":6554,"journal":{"name":"2016 IEEE MTT-S International Microwave Symposium (IMS)","volume":"51 1","pages":"1-4"},"PeriodicalIF":0.0,"publicationDate":"2016-05-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"75298882","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Soldered hot-via E-band and W-band power amplifier MMICs for millimeter-wave chip scale packaging 用于毫米波芯片级封装的焊接热通e波段和w波段功率放大器mmic
2016 IEEE MTT-S International Microwave Symposium (IMS) Pub Date : 2016-05-22 DOI: 10.1109/MWSYM.2016.7540025
A. Bessemoulin, Melissa C. Rodriguez, S. Mahon, A. Parker, M. Heimlich
{"title":"Soldered hot-via E-band and W-band power amplifier MMICs for millimeter-wave chip scale packaging","authors":"A. Bessemoulin, Melissa C. Rodriguez, S. Mahon, A. Parker, M. Heimlich","doi":"10.1109/MWSYM.2016.7540025","DOIUrl":"https://doi.org/10.1109/MWSYM.2016.7540025","url":null,"abstract":"Novel and realistic application of hot-via interconnects to millimeter-wave active and power MMICs is demonstrated for the first time. Power amplifier MMICs in the 80- and 100-GHz range were successfully designed, assembled, and characterized for wire-bond free chip interconnect technology. With hot-via RF transitions, compact E-band power amplifier MMICs directly soldered onto evaluation boards demonstrate 22-dB gain and over 28-dBm output power in the ETSI band of 81-86 GHz, with little performance degradation compared to reference circuits probed with traditional front-side RF pads. Similarly, a broadband amplifier, when interconnected to its matching PCB, delivers 13-dB of gain in the W-band, and 21-dBm P1dB. To the author's knowledge, this work represents the highest frequency demonstration of any soldered millimeter-wave hot-via active circuits onto standard PCBs, with remarkable measured power performance, closely equaling that of ideally front-side RF probed PA MMICs.","PeriodicalId":6554,"journal":{"name":"2016 IEEE MTT-S International Microwave Symposium (IMS)","volume":"15 1","pages":"1-4"},"PeriodicalIF":0.0,"publicationDate":"2016-05-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"72955565","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 9
A GaN HEMT X-band cavity oscillator with electronic gain control 具有电子增益控制的GaN HEMT x波段腔振荡器
2016 IEEE MTT-S International Microwave Symposium (IMS) Pub Date : 2016-05-22 DOI: 10.1109/MWSYM.2016.7540030
Mikael Horberg, D. Kuylenstierna
{"title":"A GaN HEMT X-band cavity oscillator with electronic gain control","authors":"Mikael Horberg, D. Kuylenstierna","doi":"10.1109/MWSYM.2016.7540030","DOIUrl":"https://doi.org/10.1109/MWSYM.2016.7540030","url":null,"abstract":"This paper reports on a very low phase-noise GaN HEMT cavity oscillator at 8.5 GHz based on a reflection amplifier with electronic gain control. The gain control functionality is essential in order to control the open loop gain, which is critical for the phase noise performance. A large loop gain forces the oscillator in deep compression, resulting in increased noise conversion and degraded phase noise. On the other hand, a sufficient gain margin is mandatory to ensure satisfaction of the oscillation condition with margin that covers temperature drift and individual spread. The electronic gain control uses varactors to change the output termination of a reflection amplifier. In this way the loop gain can be set independently of the bias point of the active device and the position of the metal cavity. A minimum phase noise of -136 dBc/Hz@ 100 kHz off-set is achieved, which is comparable to what is reached for a mechanically tuned oscillator in the same process.","PeriodicalId":6554,"journal":{"name":"2016 IEEE MTT-S International Microwave Symposium (IMS)","volume":"58 1","pages":"1-4"},"PeriodicalIF":0.0,"publicationDate":"2016-05-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"74215914","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
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