d波段应用的有源单极双掷开关

2016 IEEE MTT-S International Microwave Symposium (IMS) Pub Date : 2016-05-22 DOI:10.1109/MWSYM.2016.7539969

D. Muller, U. Lewark, A. Tessmann, A. Leuther, T. Zwick, I. Kallfass

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引用次数: 6

摘要

本文提出了一种工作在d波段(110-170GHz)频率范围内的单极双掷有源开关(SPDT)，该开关基于一种新型的紧凑晶体管单元格。使用GaAs mHEMT工艺设计和制造了发射端和接收端的两个开关。该单元由用于损耗补偿的共门级和用于实现高隔离的并联级集成而成。经处理的单片微波集成电路(mmic) SPDT开关的片上测量结果显示，最大增益为3.2dB和3.3dB, 3dB带宽分别为47GHz和38.7GHz。在3dB带宽内，两个交换机的隔离度均高于21.5dB。

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Active single pole double throw switches for D-Band applications

This paper presents active single pole double throw (SPDT) switches, based on a novel compact transistor unit cell, working in the D-Band (110-170GHz) frequency range. Two switches for the transmit- and receive side were designed and manufactured using a GaAs mHEMT process. The unit cell consists of the integration of a common-gate stage for loss compensation and a shunt-stage to achieve high isolation. On-wafer measurement results of the processed monolithic microwave integrated circuits (MMICs) SPDT switches show a maximum gain of 3.2dB and 3.3dB with 3dB bandwidths of 47GHz and 38.7GHz, respectively. Within the 3dB bandwidth the isolation of both switches is higher than 21.5dB.

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2016 IEEE MTT-S International Microwave Symposium (IMS)

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