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2014 20th International Conference on Ion Implantation Technology (IIT)最新文献

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Dopant profile engineering using ArF excimer laser, flash lamp and spike annealing for junction formation 采用ArF准分子激光、闪光灯和尖峰退火形成结的掺杂轮廓工程
2014 20th International Conference on Ion Implantation Technology (IIT) Pub Date : 2014-10-30 DOI: 10.1109/IIT.2014.6940000
A. Scheit, T. Lenke, D. Bolze, S. Chiussi, S. Stefanov, P. Gonzalez, T. Schumann, W. Skorupa
{"title":"Dopant profile engineering using ArF excimer laser, flash lamp and spike annealing for junction formation","authors":"A. Scheit, T. Lenke, D. Bolze, S. Chiussi, S. Stefanov, P. Gonzalez, T. Schumann, W. Skorupa","doi":"10.1109/IIT.2014.6940000","DOIUrl":"https://doi.org/10.1109/IIT.2014.6940000","url":null,"abstract":"The aim of this study is to evaluate the feasibility to integrate excimer laser annealing (ELA) into the process flow to achieve higher doped and ideally box shaped profiles. The recrystallization, dopant distribution, and activation of boron or arsenic shallow implantations in germanium pre-amorphized silicon are investigated by comparing argon fluoride ELA, flash lamp annealing, and spike annealing. As a result the complete amorphous Silicon layer melts with ELA above 400 mJ/cm2 and subsequently recrystallizes taking the silicon substrate as crystal seed (ELA Liquid Phase Epitaxial Regrowth). The implanted dopants are uniformly distributed in the melted region. We achieved four to ten times sharper boron profiles and a dopant activation of up to 4×1020 cm-3 An active arsenic concentration of 1.6×1020 cm-3 was demonstrated.","PeriodicalId":6548,"journal":{"name":"2014 20th International Conference on Ion Implantation Technology (IIT)","volume":"78 1","pages":"1-4"},"PeriodicalIF":0.0,"publicationDate":"2014-10-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"83644595","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Damage engineering on Purion XE™ high energy ion implanter Purion XE™高能离子注入机的损伤工程
2014 20th International Conference on Ion Implantation Technology (IIT) Pub Date : 2014-10-30 DOI: 10.1109/IIT.2014.6940022
J. Deluca, S. Satoh, H. Chen, T. Fox, S. Kondratenko, R. Reece
{"title":"Damage engineering on Purion XE™ high energy ion implanter","authors":"J. Deluca, S. Satoh, H. Chen, T. Fox, S. Kondratenko, R. Reece","doi":"10.1109/IIT.2014.6940022","DOIUrl":"https://doi.org/10.1109/IIT.2014.6940022","url":null,"abstract":"Many IC and CIS manufacturers still rely heavily on batch high energy ion implanters such as the Axcelis HE3 and Paradigm XE systems. Angle control continues to become increasingly important with the scaling of devices and the increasing use of channeled implants to reduce the number of implant steps needed to produce a box-like dopant profile. The use of channeled implants limits the use of batch ion implanters for these applications due to the cone angle effect. The introduction of serial high energy ion implanters to replace the batch implanters has exposed subtle differences in damage characteristics related to the differences in tool architecture. Investigation into second order differences in the damage characteristics of the single wafer and batch implanters have resulted in the development of a new system for modifying the electrostatic scanning of the ion beam on the Purion XE with implications for improvement in damage reduction, low dose stability and utilization of the system's mechanical throughput limit.","PeriodicalId":6548,"journal":{"name":"2014 20th International Conference on Ion Implantation Technology (IIT)","volume":"31 1","pages":"1-4"},"PeriodicalIF":0.0,"publicationDate":"2014-10-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"76460963","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Characterization of arsenic PIII implants in FinFETs by LEXES, SIMS and STEM-EDX 基于LEXES、SIMS和STEM-EDX的finfet中砷PIII植入物的表征
2014 20th International Conference on Ion Implantation Technology (IIT) Pub Date : 2014-10-30 DOI: 10.1109/IIT.2014.6940011
K.-A. Bui-T Meura, F. Torregrosa, A. Robbes, Seo-Youn Choi, A. Merkulov, M. Moret, J. Duchaine, N. Horiguchi, Letian Li, C. Mitterbauer
{"title":"Characterization of arsenic PIII implants in FinFETs by LEXES, SIMS and STEM-EDX","authors":"K.-A. Bui-T Meura, F. Torregrosa, A. Robbes, Seo-Youn Choi, A. Merkulov, M. Moret, J. Duchaine, N. Horiguchi, Letian Li, C. Mitterbauer","doi":"10.1109/IIT.2014.6940011","DOIUrl":"https://doi.org/10.1109/IIT.2014.6940011","url":null,"abstract":"FinFETs have emerged as a novel transistor architecture for 22nm technology and beyond thanks to good electrostatic control and scalability [1,2]. However, the change from planar to FinFET device architectures challenges the junction formation and the characterization. Fin sidewall doping and doping damages control are critical in scaled FinFETs [3,4,5] but both are difficult to achieve with conventional beamline ion implantation. As an alternative technique, Plasma Immersion Ion implantation (PIII) has shown promising results [6,7]. New characterization techniques such as SIMS through fins, SSRM, atom probe tomography, are needed [8,9,10] to complement standard sheet resistance and SIMS measurements to evaluate sidewall dopants. In this paper we present Low energy Electron X-Ray Emission Spectrometry (LEXES) and SIMS through fins for the characterization of arsenic implants in FinFETs by PIII. STEM-EDX has been used to double check SIMS average data at the fin's scale. The complementarity of these techniques will be presented and excellent conformal fin doping capability of the PULSION® tool is demonstrated.","PeriodicalId":6548,"journal":{"name":"2014 20th International Conference on Ion Implantation Technology (IIT)","volume":"6 1","pages":"1-4"},"PeriodicalIF":0.0,"publicationDate":"2014-10-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"73076424","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
Influence of implantation temperature on the formation of hydrogen-related defects in InP 注入温度对可使氢相关缺陷的形成
2014 20th International Conference on Ion Implantation Technology (IIT) Pub Date : 2014-10-30 DOI: 10.1109/IIT.2014.6939972
F. P. Luce, S. Reboh, E. Vilain, F. Madeira, J. Barnes, N. Rochat, T. Salvetat, A. Tauzin, F. Milési, F. Mazen, C. Deguet
{"title":"Influence of implantation temperature on the formation of hydrogen-related defects in InP","authors":"F. P. Luce, S. Reboh, E. Vilain, F. Madeira, J. Barnes, N. Rochat, T. Salvetat, A. Tauzin, F. Milési, F. Mazen, C. Deguet","doi":"10.1109/IIT.2014.6939972","DOIUrl":"https://doi.org/10.1109/IIT.2014.6939972","url":null,"abstract":"The evolution of hydrogen-related defects introduced in the InP lattice due to the implantation and subsequent annealing is investigated as a function of the implantation temperature, that was varied from -15 °C to 230 °C. Implanted and annealed samples were analyzed by optical microscopy, SIMS and FTIR. The obtained results are discussed in terms of the formation of VInHx complexes that seems to be efficient H trapping centers, probably being the precursors of the fracture process in InP.","PeriodicalId":6548,"journal":{"name":"2014 20th International Conference on Ion Implantation Technology (IIT)","volume":"99 1","pages":"1-4"},"PeriodicalIF":0.0,"publicationDate":"2014-10-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"74443222","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
Investigation of floating gate depletion effect on NAND FLASH reliability 浮栅损耗对NAND闪存可靠性影响的研究
2014 20th International Conference on Ion Implantation Technology (IIT) Pub Date : 2014-10-30 DOI: 10.1109/IIT.2014.6940049
J. Liao, Jung-Yi Guo, Yu-Min Lin, J. Hsieh, Ling-Wu Yang, Tahone Yang, Kuang-Chao Chen, Chih-Yuan Lu
{"title":"Investigation of floating gate depletion effect on NAND FLASH reliability","authors":"J. Liao, Jung-Yi Guo, Yu-Min Lin, J. Hsieh, Ling-Wu Yang, Tahone Yang, Kuang-Chao Chen, Chih-Yuan Lu","doi":"10.1109/IIT.2014.6940049","DOIUrl":"https://doi.org/10.1109/IIT.2014.6940049","url":null,"abstract":"Continuous technology scaling on NAND FLASH results in serious FG poly depletion issue due to Phosphorous out-gassing and degrades the cell reliability. Phosphorous implantation (P-IMP) into in-situ dope poly can improve poly depletion issue, but the FG bending and FG height loss were observed. In this study, we have successfully explored the methods to minimize FG bending and FG height loss issue by adding plasma oxide (PO) as screen oxide and/or changing the rotation times and temperature control of ion implantation. Finally, P-IMP on FG was validated at 36nm NAND FLASH device and shows significantly improvement on FG depletion and cell reliability.","PeriodicalId":6548,"journal":{"name":"2014 20th International Conference on Ion Implantation Technology (IIT)","volume":"1 1","pages":"1-4"},"PeriodicalIF":0.0,"publicationDate":"2014-10-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"75625906","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Co-implantation with microwave annealing for phosphorous shallow-junction formation in Germanium 微波共注入法在锗中形成磷浅结
2014 20th International Conference on Ion Implantation Technology (IIT) Pub Date : 2014-10-30 DOI: 10.1109/IIT.2014.6939956
J. Liu, J. Luo, J. Li, C. Chen, G. L. Wang, T. Chen, T. T. Li, J. Zhong, D. Wu, P. Xu, C. Zhao
{"title":"Co-implantation with microwave annealing for phosphorous shallow-junction formation in Germanium","authors":"J. Liu, J. Luo, J. Li, C. Chen, G. L. Wang, T. Chen, T. T. Li, J. Zhong, D. Wu, P. Xu, C. Zhao","doi":"10.1109/IIT.2014.6939956","DOIUrl":"https://doi.org/10.1109/IIT.2014.6939956","url":null,"abstract":"The formation of N-type Ge shallow junction is investigated in this work. By combining carbon co-implantation and microwave annealing (MWA) method, the junction depth of 34 nm measured by secondary ion mass spectroscopy (SIMS) as well as sheet resistance of 467 ohm/sq measured by Hall is achieved. Results show that the opitimal carbon implantation energy is 8 keV in that distributed carbon ions at such an energy can effectively trap vacancies and phosphorous into immobile clusters. The recrystallization of amorphous layer after MWA annealing is also studied by both ellipsometry and transmission electron microscopy (TEM).","PeriodicalId":6548,"journal":{"name":"2014 20th International Conference on Ion Implantation Technology (IIT)","volume":"4 1","pages":"1-4"},"PeriodicalIF":0.0,"publicationDate":"2014-10-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"76010068","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Selective microwave mode excitation and charge state distribution on the first stage of tandem type ECRIS 串联型ECRIS第一级的选择性微波模式激励和电荷态分布
2014 20th International Conference on Ion Implantation Technology (IIT) Pub Date : 2014-10-30 DOI: 10.1109/IIT.2014.6940033
Y. Kato, D. Kimura, K. Yano, S. Kumakura, Y. Imai, T. Nishiokada, F. Sato, T. Iida
{"title":"Selective microwave mode excitation and charge state distribution on the first stage of tandem type ECRIS","authors":"Y. Kato, D. Kimura, K. Yano, S. Kumakura, Y. Imai, T. Nishiokada, F. Sato, T. Iida","doi":"10.1109/IIT.2014.6940033","DOIUrl":"https://doi.org/10.1109/IIT.2014.6940033","url":null,"abstract":"A new concept on magnetic field of plasma production and confinement has been proposed to enhance efficiency of an electron cyclotron resonance (ECR) plasma for broad and dense ion beam source under the low pressure. We make this source a part of new tandem type ion source for the first stage. We are also constructing the large bore second stage for synthesizing, extracting and analyzing ions. Both ECR plasmas are necessary to be available to coexist and to be operated individually with different plasma parameters. In the first stage, we optimize the ion beam current and ion saturation current by a mobile plate tuner. They change by the position of the plate tuner for single and multi-frequencies microwaves. The peak positions of them are close to the position where the microwave mode forms standing wave between the plate tuner and the extractor. We show a new guiding principle, which the number of efficiently azimuthal microwave mode should be selected to fit to that of multipole of comb-shaped magnets. We obtained the excitation of selective modes using new mobile plate tuner to enhance ECR efficiency. Furthermore we first obtained charge state distributions of ion beams extracted from the first stage after constructing the second stage and its beam line.","PeriodicalId":6548,"journal":{"name":"2014 20th International Conference on Ion Implantation Technology (IIT)","volume":"22 1","pages":"1-4"},"PeriodicalIF":0.0,"publicationDate":"2014-10-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"90532647","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Activation and defect dissolution of non-amorphizing, elevated temperature Si+ implants into In0.53Ga0.47As In0.53Ga0.47As中非非晶高温Si+植入物的活化和缺陷溶解
2014 20th International Conference on Ion Implantation Technology (IIT) Pub Date : 2014-10-30 DOI: 10.1109/IIT.2014.6939962
A. G. Lind, K. Jones, C. Hatem
{"title":"Activation and defect dissolution of non-amorphizing, elevated temperature Si+ implants into In0.53Ga0.47As","authors":"A. G. Lind, K. Jones, C. Hatem","doi":"10.1109/IIT.2014.6939962","DOIUrl":"https://doi.org/10.1109/IIT.2014.6939962","url":null,"abstract":"A range of implant temperatures from 20 to 300C are studied for fixed 20 keV implant energy and 6E14 cm-2 dose Si implants into In0.53Ga0.47As. Hall effect measurements performed on the samples after rapid thermal annealing reveal that Si implant activation is actually maximized for intermediate implant temperatures from 50-110C that are shown to be non-amorphizing. While these results echo the conclusion of previous studies that elevated temperature Si implants into In0.53Ga0.47As show increased activation over implants that are likely amorphizing, it is clear that there is a temperature window from 50-110C where activation is improved with increasing thermal budget for the dose and energy studied. Calculated Si solubilities of up to 1.3E19 cm-3 and sheet resistances as low as 26 ohm/sq are achieved for a 10 keV 5E14 cm-2 Si implant performed at 80C after 750C 5s annealing.","PeriodicalId":6548,"journal":{"name":"2014 20th International Conference on Ion Implantation Technology (IIT)","volume":"69 3 1","pages":"1-3"},"PeriodicalIF":0.0,"publicationDate":"2014-10-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"79684422","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
MeV-proton channeling in crystalline silicon 晶体硅中的mev质子通道
2014 20th International Conference on Ion Implantation Technology (IIT) Pub Date : 2014-10-30 DOI: 10.1109/IIT.2014.6940059
M. Jelinek, W. Schustereder, J. Laven, H. Schulze, S. Kirnstoetter, M. Rommel, L. Frey
{"title":"MeV-proton channeling in crystalline silicon","authors":"M. Jelinek, W. Schustereder, J. Laven, H. Schulze, S. Kirnstoetter, M. Rommel, L. Frey","doi":"10.1109/IIT.2014.6940059","DOIUrl":"https://doi.org/10.1109/IIT.2014.6940059","url":null,"abstract":"Hydrogen implantation has become an important application in the fabrication of power semiconductor devices. With the product requirement of a well-defined implantation profile, adequate control of the incident beam angle is necessary in order to avoid channeling effects. With respect to the different scan systems of commercial implanters and the crystal alignment of the bulk material the implant tilt and twist angles have to be adapted. We used commercially available <;100>-oriented silicon wafers to examine planar channeling along a {110}-plane for proton energies in the range of 0.5-2.5 MeV. The critical angle as a function of proton energy is determined from photothermal response measurements (TWIN).","PeriodicalId":6548,"journal":{"name":"2014 20th International Conference on Ion Implantation Technology (IIT)","volume":"27 1","pages":"1-4"},"PeriodicalIF":0.0,"publicationDate":"2014-10-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"83592847","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Modification of polypropylene films for thin film capacitors by ion implantation 离子注入改性薄膜电容器用聚丙烯薄膜
2014 20th International Conference on Ion Implantation Technology (IIT) Pub Date : 2014-10-30 DOI: 10.1109/IIT.2014.6939968
V. Haublein, E. Birnbaum, H. Ryssel, L. Frey, W. Grimm
{"title":"Modification of polypropylene films for thin film capacitors by ion implantation","authors":"V. Haublein, E. Birnbaum, H. Ryssel, L. Frey, W. Grimm","doi":"10.1109/IIT.2014.6939968","DOIUrl":"https://doi.org/10.1109/IIT.2014.6939968","url":null,"abstract":"Polypropylene (PP) films for thin film capacitors were implanted with N, Ar, and Ne, respectively, in order to reduce the water vapor permeability. It is shown that the reduction of the water vapor permeability strongly depends on implantation dose and energy. For doses below 1015 cm-2, the water vapor permeability was not affected, while doses above 1015 cm-2 lead to a significant reduction. For all of the mentioned elements, 10 keV implants lead to a significantly greater reduction than 20 keV implants. The largest reduction of about 96 % was achieved by Ar implantation at 10 keV and a dose of 1015 cm-2. Besides the water vapor permeability analysis, surface analysis, tensile tests, and electric strength measurements of implanted and nonimplanted films were performed and are discussed in the paper.","PeriodicalId":6548,"journal":{"name":"2014 20th International Conference on Ion Implantation Technology (IIT)","volume":"43 1","pages":"1-4"},"PeriodicalIF":0.0,"publicationDate":"2014-10-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"78696519","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
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