2016 IEEE 43rd Photovoltaic Specialists Conference (PVSC)最新文献_第9页

GE MW SiC PV inverter development GE兆瓦级碳化硅光伏逆变器开发

2016 IEEE 43rd Photovoltaic Specialists Conference (PVSC) Pub Date : 2016-06-05 DOI: 10.1109/PVSC.2016.7750312

R. Zhou

引用次数: 3

Computational fluid dynamics study for the optimization of surface temperature profile of photovoltaic/thermal system 光伏/热系统表面温度分布优化的计算流体动力学研究

2016 IEEE 43rd Photovoltaic Specialists Conference (PVSC) Pub Date : 2016-06-05 DOI: 10.1109/PVSC.2016.7749727

A. A. Baloch, H. Bahaidarah, P. Gandhidasan

{"title":"Computational fluid dynamics study for the optimization of surface temperature profile of photovoltaic/thermal system","authors":"A. A. Baloch, H. Bahaidarah, P. Gandhidasan","doi":"10.1109/PVSC.2016.7749727","DOIUrl":"https://doi.org/10.1109/PVSC.2016.7749727","url":null,"abstract":"Computational Fluid Dynamics (CFD) study to obtain uniform thermal characteristics on the front surface of solar cell module has been studied. The performance of PV panels significantly reduces with high temperature of solar cell and low temperature uniformity. For the optimization process, photovoltaic-thermal (PV/T) system has been analyzed in this paper for the meteorogical conditions of Dhahran. The effect of reducing heat exchanger's cross section area by changing the bas angle on the temperature profile has been studied using FLUENT software. Based on the CFD simulations of temperature profile, two degree angle was selected for the heat exchanger in PV/T system because of least mean temperature deviation. The temperature distribution for cooled PV showed an approximate uniform temperature profile and was able to reduce the cell temperature from 71°C to 45.2°C for the operating conditions in Dhahran in the month of June. From the electrical point of view, maximum energy yield increased from 11.9 W to 16.2W using the proposed uniform temperature heat exchanger.","PeriodicalId":6524,"journal":{"name":"2016 IEEE 43rd Photovoltaic Specialists Conference (PVSC)","volume":"59 1","pages":"0847-0849"},"PeriodicalIF":0.0,"publicationDate":"2016-06-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"90399999","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 1

Advanced triple junction solar cell by employing inorganic-organic hybrid materials 采用无机-有机杂化材料的新型三结太阳能电池

2016 IEEE 43rd Photovoltaic Specialists Conference (PVSC) Pub Date : 2016-06-05 DOI: 10.1109/PVSC.2016.7749773

Jinjoo Park, S. M. Iftiquar, Youn-jung Lee, Chonghoon Shin, Shihyun Ahn, Junhee Jung, Sangho Kim, Taehee Kim, H. Kim, J. Yi

引用次数: 0

Direct growth of crystalline silicon on GaAs by low temperature PECVD: Towards hybrid tunnel junctions for III-V/Si tandem cells 低温PECVD在砷化镓上直接生长晶体硅:III-V/Si串联电池的混合隧道结

2016 IEEE 43rd Photovoltaic Specialists Conference (PVSC) Pub Date : 2016-06-05 DOI: 10.1109/PVSC.2016.7749951

G. Hamon, J. Decobert, N. Vaissière, R. Lachaume, R. Cariou, W. Chen, J. Alvarez, N. Habka, J. Kleider, P. Roca i Cabarrocas

{"title":"Direct growth of crystalline silicon on GaAs by low temperature PECVD: Towards hybrid tunnel junctions for III-V/Si tandem cells","authors":"G. Hamon, J. Decobert, N. Vaissière, R. Lachaume, R. Cariou, W. Chen, J. Alvarez, N. Habka, J. Kleider, P. Roca i Cabarrocas","doi":"10.1109/PVSC.2016.7749951","DOIUrl":"https://doi.org/10.1109/PVSC.2016.7749951","url":null,"abstract":"Monolithical integration of III-V and Si is of strong interest to produce tandem solar cells reaching high conversion efficiencies. In the context of the French ANR research project IMPETUS, an innovative approach for III-V/Si multijunction solar cells is studied. The targeted device is a tandem cell composed of a III-V top cell (AlGaAs) and a IV bottom cell (Si1-xGex). The choice of AlyGa1-yAs as the top material is justified because it provides the optimum bandgap combination with Si1-xGex (1.63 eV/0.96 eV), with theoretical efficiencies in excess of 42% for such a tandem configuration. In our inverted metamorphic approach, we first use MOVPE to grow the AlGaAs top cell on a lattice matched GaAs substrate, and then perform low temperature PECVD heteroepitaxial SiGe on top. We show here the first structural and electrical characterizations of Si(PECVD)/III-V(MOVPE) interfaces. Furthermore, the epitaxial growth of highly doped crystalline Si by low-temperature PECVD on GaAs enables us to fabricate hybrid tunnel junctions with low resistivity and a high current, suitable to interconnect the two subcells in the tandem III-V/Si solar cell.","PeriodicalId":6524,"journal":{"name":"2016 IEEE 43rd Photovoltaic Specialists Conference (PVSC)","volume":"190 1","pages":"1895-1897"},"PeriodicalIF":0.0,"publicationDate":"2016-06-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"76866348","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 1

Screen printed metal matrix composite contacts for crack tolerant solar cells 耐裂太阳能电池用丝网印刷金属基复合触点

2016 IEEE 43rd Photovoltaic Specialists Conference (PVSC) Pub Date : 2016-06-05 DOI: 10.1109/PVSC.2016.7750115

A. Manoussakis, Omar K. Abudayyeh, Nathan D. Gapp, D. Wilt

{"title":"Screen printed metal matrix composite contacts for crack tolerant solar cells","authors":"A. Manoussakis, Omar K. Abudayyeh, Nathan D. Gapp, D. Wilt","doi":"10.1109/PVSC.2016.7750115","DOIUrl":"https://doi.org/10.1109/PVSC.2016.7750115","url":null,"abstract":"Solar cells used in space missions are the primary source for power on board the space vehicle. Space solar cells are becoming thinner for improved performance (W/kg) and are based on single crystalline materials where fracturing or cleaving can easily occur from packaging, deployment and constant temperature cycling in outer space. When the fracture in the semiconductor extends through the solar cell metallization, loss of power will occur and can hinder a mission. A novel semiconductor metallization is being developed that may enable the solar cells to be fully crack tolerant. The material consists of carbon nanotubes impregnated silver metallization, termed metal matrix composite, deposited by screen printing. The carbon nanotubes increase the fracture toughness of the metallization and also offers a redundant electrical path should the metal matrix fracture. In addition to these benefits, the use of screen printing will facilitate lower costs and ease of manufacturability by eliminating the expensive photolithography and evaporation steps used for conventional metallization. The inks that are being developed show promise of electrically bridging cracks and are further being tuned for screen printing processes.","PeriodicalId":6524,"journal":{"name":"2016 IEEE 43rd Photovoltaic Specialists Conference (PVSC)","volume":"34 1","pages":"2582-2585"},"PeriodicalIF":0.0,"publicationDate":"2016-06-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"82718695","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 1

Intrinsic Raman signatures of pristine hybrid perovskite CH3NH3PbI3 and its multiple stages of structure transformation 原始杂化钙钛矿CH3NH3PbI3的本征拉曼特征及其多阶段结构转变

2016 IEEE 43rd Photovoltaic Specialists Conference (PVSC) Pub Date : 2016-06-05 DOI: 10.1109/PVSC.2016.7749895

Qiong Chen, Henan Liu, Hui‐Seon Kim, Yucheng Liu, Mengjin Yang, N. Yue, Gang Ren, K. Zhu, S. Liu, N. Park, Yong Zhang

引用次数: 0

Performance analysis of crystalline silicon and amorphous silicon photovoltaic systems in Iowa: 2011 to 2014 2011 - 2014年爱荷华州晶体硅和非晶硅光伏系统性能分析

2016 IEEE 43rd Photovoltaic Specialists Conference (PVSC) Pub Date : 2016-06-05 DOI: 10.1109/PVSC.2016.7750124

A. A. Shishavan, Eric C. Foresman, F. Toor

引用次数: 5

Multi-port converter for solar powered hybrid vehicle 用于太阳能混合动力汽车的多端口转换器

2016 IEEE 43rd Photovoltaic Specialists Conference (PVSC) Pub Date : 2016-06-05 DOI: 10.1109/PVSC.2016.7750268

Sarvagya Agrawal, S. Singh

{"title":"Multi-port converter for solar powered hybrid vehicle","authors":"Sarvagya Agrawal, S. Singh","doi":"10.1109/PVSC.2016.7750268","DOIUrl":"https://doi.org/10.1109/PVSC.2016.7750268","url":null,"abstract":"In this paper a novel Multi-port converter interfacing a photovoltaic array, battery and a DC load is proposed It is composed of a two uni-directional DC port for interfacing photovoltaic array and DC load, and a bi-directional DC port for interfacing battery. Compared to the traditional stand-alone photovoltaic power system, this system shows the advantages of better protection and more efficient control on charge/discharge of the battery. Furthermore, it can make better use of solar energy and realize energy management of the system The key point of energy management for the system is to control the bi-directional converter efficiently, where bi-directional voltage and current must be controlled. In this paper, the control strategy of bi-directional converter is proposed, which operates at three operation modes: Buck (charge battery), Boost (discharge battery), and shut-down (SD). Maximum power point tracking control is used to extract the maximum power from the Photovoltaic array. Single power processing stage with multiple power ports offers an opportunity to make the whole system simpler, compact and more efficient. Finally, a simulation of 250 W and 5 hp converter is built to verify the theoretical analysis and the control strategies. The simulation is tested for variable irradiance and variable load.","PeriodicalId":6524,"journal":{"name":"2016 IEEE 43rd Photovoltaic Specialists Conference (PVSC)","volume":"35 1","pages":"3258-3262"},"PeriodicalIF":0.0,"publicationDate":"2016-06-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"91080414","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 3

Highly efficient thermophotovoltaics enabled by photon re-use 通过光子再利用实现高效热光伏

2016 IEEE 43rd Photovoltaic Specialists Conference (PVSC) Pub Date : 2016-06-05 DOI: 10.1109/PVSC.2016.7749766

G. Scranton, T. P. Xiao, V. Ganapati, J. Holzrichter, P. Peterson, E. Yablonovitch

引用次数: 3

Depth profiling of chemical and mechanical degradation of UV-exposed PV backsheets uv暴露的PV背板的化学和机械降解深度分析

2016 IEEE 43rd Photovoltaic Specialists Conference (PVSC) Pub Date : 2016-06-05 DOI: 10.1109/PVSC.2016.7749560

X. Gu, Chiao-Chi Lin, Peter J. Krommenhoek, Yadong Lyu, Jae Hyun Kim, Li-Chieh Yu, T. Nguyen, S. Watson

{"title":"Depth profiling of chemical and mechanical degradation of UV-exposed PV backsheets","authors":"X. Gu, Chiao-Chi Lin, Peter J. Krommenhoek, Yadong Lyu, Jae Hyun Kim, Li-Chieh Yu, T. Nguyen, S. Watson","doi":"10.1109/PVSC.2016.7749560","DOIUrl":"https://doi.org/10.1109/PVSC.2016.7749560","url":null,"abstract":"The properties of the multilayer PV backsheets, including their interfaces, during weathering are not well-known. In this study, a commercial PPE (polyethylene terephthalate (PET)/PET/ethylene vinyl acetate (EVA)) backsheet films was selected as a model system for a depth profiling study of chemical and mechanical properties of a backsheet film during UV exposure. Cryo-microtomy was used to obtain cross-sectional PPE samples. The NIST SPHERE (Simulated Photodegradation via High Energy Radiant Exposure) was used for the accelerated laboratory exposure of the materials with UV at 85°C and two relative humidities (RH) of 5 % (dry) and 60 % (wet). Chemical and mechanical depth profiling of the aged and unaged samples was conducted by Raman microscopic mapping, nanoindentation and atomic force microscopy in quantitative nanomechanical mapping mode. The results indicated that non-uniform degradation took place across the thickness of the PPE backsheet with severe chemical and mechanical degradation observed on the outer pigmented PET layer, two adhesive layers, and the pigmented-EVA layer. The regions with the increase in the modulus detected by nanoindetation were consistent with those showing clear chemical degradation in Raman and Attenuated Total Reflection Fourier Transform Infrared Spectroscopy (ATR-FTIR). This depth profiling study brings new understanding to the mechanisms of failures observed in the backsheets during weathering.","PeriodicalId":6524,"journal":{"name":"2016 IEEE 43rd Photovoltaic Specialists Conference (PVSC)","volume":"34 1","pages":"0115-0120"},"PeriodicalIF":0.0,"publicationDate":"2016-06-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"84798215","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 4