2016 IEEE 43rd Photovoltaic Specialists Conference (PVSC)最新文献

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Outstanding As-deposited surface passivation by industrial PECVD aluminum oxide 优异的工业PECVD氧化铝表面钝化
2016 IEEE 43rd Photovoltaic Specialists Conference (PVSC) Pub Date : 2016-06-05 DOI: 10.1109/PVSC.2016.7750191
Kyung Kim, Z. Hameiri, N. Borojevic, S. Duttagupta, S. Winderbaum
{"title":"Outstanding As-deposited surface passivation by industrial PECVD aluminum oxide","authors":"Kyung Kim, Z. Hameiri, N. Borojevic, S. Duttagupta, S. Winderbaum","doi":"10.1109/PVSC.2016.7750191","DOIUrl":"https://doi.org/10.1109/PVSC.2016.7750191","url":null,"abstract":"Aluminum oxide has been highlighted as a promising surface passivation layer for p-type silicon surface. To-date, most of the studies have focused on aluminum oxide layers deposited with atomic layer deposition systems which have lower throughput than industrial plasma-based systems. In this study, the effects of deposition conditions on the electrical and optical properties of aluminum oxide deposited by an industrial plasma enhanced chemical vapor deposition system are presented. Low saturation current density of 1.9 fA/cm2 was achieved by as deposited layer on p-type Czochralski wafer. The most significant deposition process factor for high quality surface passivation was found to be the gas flow rate ratio between nitrous oxide and tri-methyl-aluminum.","PeriodicalId":6524,"journal":{"name":"2016 IEEE 43rd Photovoltaic Specialists Conference (PVSC)","volume":"70 1","pages":"2917-2921"},"PeriodicalIF":0.0,"publicationDate":"2016-06-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"85696676","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Evaluating a model to estimate GHI, DNI, & DHI from POA irradiance 评估从POA辐照度估算GHI、DNI和DHI的模型
2016 IEEE 43rd Photovoltaic Specialists Conference (PVSC) Pub Date : 2016-06-05 DOI: 10.1109/PVSC.2016.7749749
M. Gostein, B. Stueve, K. Passow, A. Panchula
{"title":"Evaluating a model to estimate GHI, DNI, & DHI from POA irradiance","authors":"M. Gostein, B. Stueve, K. Passow, A. Panchula","doi":"10.1109/PVSC.2016.7749749","DOIUrl":"https://doi.org/10.1109/PVSC.2016.7749749","url":null,"abstract":"We evaluate the GTI-DIRINT model for estimating direct normal irradiance (DNI), diffuse horizontal irradiance (DHI), and global horizontal irradiance (GHI) from measured plane-of-array (POA) irradiance. Our motivation is to explore the potential for limiting ground-based irradiance measurements to POA to reduce instrumentation costs. We test the GTI-DIRINT model using meteorological data collected at seven First Solar PV power plants, comparing the GTI-DIRINT model which uses POA as input to the DIRINT model which uses GHI as input.","PeriodicalId":6524,"journal":{"name":"2016 IEEE 43rd Photovoltaic Specialists Conference (PVSC)","volume":"1 1","pages":"0943-0946"},"PeriodicalIF":0.0,"publicationDate":"2016-06-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"88479883","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
GE MW SiC PV inverter development GE兆瓦级碳化硅光伏逆变器开发
2016 IEEE 43rd Photovoltaic Specialists Conference (PVSC) Pub Date : 2016-06-05 DOI: 10.1109/PVSC.2016.7750312
R. Zhou
{"title":"GE MW SiC PV inverter development","authors":"R. Zhou","doi":"10.1109/PVSC.2016.7750312","DOIUrl":"https://doi.org/10.1109/PVSC.2016.7750312","url":null,"abstract":"Silicon Carbide (SiC) power devices can operate at higher temperatures, higher voltages and higher switching frequencies compared to existing silicon devices, resulting in greater power converter efficiency, smaller size and improved bandwidth. The SiC power device development at GE was launched in 2005 and is now starting transition from pilot production to high volume manufacturing. This talk will highlight GE's ongoing efforts to develop MW class PV inverter with best-in-class CEC efficiency approach 99%. The challenge of using SiC in those power applications is that the emphasis on reliability, ruggedness and cost is significantly higher. The extensive internal and external reliability testing of GE SiC MOSFETs has demonstrated reliability comparable to mature silicon power devices. In addition, extensive stress testing has mapped-out the device's safe operating area, such as: avalanche capability, short circuit ruggedness, body diode stability, and terrestrial cosmic radiation hardness.","PeriodicalId":6524,"journal":{"name":"2016 IEEE 43rd Photovoltaic Specialists Conference (PVSC)","volume":"31 1","pages":"3470-3470"},"PeriodicalIF":0.0,"publicationDate":"2016-06-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"75792543","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Direct growth of crystalline silicon on GaAs by low temperature PECVD: Towards hybrid tunnel junctions for III-V/Si tandem cells 低温PECVD在砷化镓上直接生长晶体硅:III-V/Si串联电池的混合隧道结
2016 IEEE 43rd Photovoltaic Specialists Conference (PVSC) Pub Date : 2016-06-05 DOI: 10.1109/PVSC.2016.7749951
G. Hamon, J. Decobert, N. Vaissière, R. Lachaume, R. Cariou, W. Chen, J. Alvarez, N. Habka, J. Kleider, P. Roca i Cabarrocas
{"title":"Direct growth of crystalline silicon on GaAs by low temperature PECVD: Towards hybrid tunnel junctions for III-V/Si tandem cells","authors":"G. Hamon, J. Decobert, N. Vaissière, R. Lachaume, R. Cariou, W. Chen, J. Alvarez, N. Habka, J. Kleider, P. Roca i Cabarrocas","doi":"10.1109/PVSC.2016.7749951","DOIUrl":"https://doi.org/10.1109/PVSC.2016.7749951","url":null,"abstract":"Monolithical integration of III-V and Si is of strong interest to produce tandem solar cells reaching high conversion efficiencies. In the context of the French ANR research project IMPETUS, an innovative approach for III-V/Si multijunction solar cells is studied. The targeted device is a tandem cell composed of a III-V top cell (AlGaAs) and a IV bottom cell (Si1-xGex). The choice of AlyGa1-yAs as the top material is justified because it provides the optimum bandgap combination with Si1-xGex (1.63 eV/0.96 eV), with theoretical efficiencies in excess of 42% for such a tandem configuration. In our inverted metamorphic approach, we first use MOVPE to grow the AlGaAs top cell on a lattice matched GaAs substrate, and then perform low temperature PECVD heteroepitaxial SiGe on top. We show here the first structural and electrical characterizations of Si(PECVD)/III-V(MOVPE) interfaces. Furthermore, the epitaxial growth of highly doped crystalline Si by low-temperature PECVD on GaAs enables us to fabricate hybrid tunnel junctions with low resistivity and a high current, suitable to interconnect the two subcells in the tandem III-V/Si solar cell.","PeriodicalId":6524,"journal":{"name":"2016 IEEE 43rd Photovoltaic Specialists Conference (PVSC)","volume":"190 1","pages":"1895-1897"},"PeriodicalIF":0.0,"publicationDate":"2016-06-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"76866348","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Screen printed metal matrix composite contacts for crack tolerant solar cells 耐裂太阳能电池用丝网印刷金属基复合触点
2016 IEEE 43rd Photovoltaic Specialists Conference (PVSC) Pub Date : 2016-06-05 DOI: 10.1109/PVSC.2016.7750115
A. Manoussakis, Omar K. Abudayyeh, Nathan D. Gapp, D. Wilt
{"title":"Screen printed metal matrix composite contacts for crack tolerant solar cells","authors":"A. Manoussakis, Omar K. Abudayyeh, Nathan D. Gapp, D. Wilt","doi":"10.1109/PVSC.2016.7750115","DOIUrl":"https://doi.org/10.1109/PVSC.2016.7750115","url":null,"abstract":"Solar cells used in space missions are the primary source for power on board the space vehicle. Space solar cells are becoming thinner for improved performance (W/kg) and are based on single crystalline materials where fracturing or cleaving can easily occur from packaging, deployment and constant temperature cycling in outer space. When the fracture in the semiconductor extends through the solar cell metallization, loss of power will occur and can hinder a mission. A novel semiconductor metallization is being developed that may enable the solar cells to be fully crack tolerant. The material consists of carbon nanotubes impregnated silver metallization, termed metal matrix composite, deposited by screen printing. The carbon nanotubes increase the fracture toughness of the metallization and also offers a redundant electrical path should the metal matrix fracture. In addition to these benefits, the use of screen printing will facilitate lower costs and ease of manufacturability by eliminating the expensive photolithography and evaporation steps used for conventional metallization. The inks that are being developed show promise of electrically bridging cracks and are further being tuned for screen printing processes.","PeriodicalId":6524,"journal":{"name":"2016 IEEE 43rd Photovoltaic Specialists Conference (PVSC)","volume":"34 1","pages":"2582-2585"},"PeriodicalIF":0.0,"publicationDate":"2016-06-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"82718695","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Intrinsic Raman signatures of pristine hybrid perovskite CH3NH3PbI3 and its multiple stages of structure transformation 原始杂化钙钛矿CH3NH3PbI3的本征拉曼特征及其多阶段结构转变
2016 IEEE 43rd Photovoltaic Specialists Conference (PVSC) Pub Date : 2016-06-05 DOI: 10.1109/PVSC.2016.7749895
Qiong Chen, Henan Liu, Hui‐Seon Kim, Yucheng Liu, Mengjin Yang, N. Yue, Gang Ren, K. Zhu, S. Liu, N. Park, Yong Zhang
{"title":"Intrinsic Raman signatures of pristine hybrid perovskite CH3NH3PbI3 and its multiple stages of structure transformation","authors":"Qiong Chen, Henan Liu, Hui‐Seon Kim, Yucheng Liu, Mengjin Yang, N. Yue, Gang Ren, K. Zhu, S. Liu, N. Park, Yong Zhang","doi":"10.1109/PVSC.2016.7749895","DOIUrl":"https://doi.org/10.1109/PVSC.2016.7749895","url":null,"abstract":"By performing spatially resolved Raman and photoluminescence spectroscopy with different illumination conditions, we have achieved a unified understanding towards the spectroscopy signatures of the organic-inorganic hybrid perovskite, transforming from the pristine state (CH<sub>3</sub>NH<sub>3</sub>PbI<sub>3</sub> or MAPbI<sub>3</sub>) to fully degraded state (i.e., PbI<sub>2</sub>), for samples with varying crystalline domain size from mesoscopic scale to macroscopic size, synthesized by three different techniques.","PeriodicalId":6524,"journal":{"name":"2016 IEEE 43rd Photovoltaic Specialists Conference (PVSC)","volume":"104 1","pages":"1620-1623"},"PeriodicalIF":0.0,"publicationDate":"2016-06-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"82848005","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Performance analysis of crystalline silicon and amorphous silicon photovoltaic systems in Iowa: 2011 to 2014 2011 - 2014年爱荷华州晶体硅和非晶硅光伏系统性能分析
2016 IEEE 43rd Photovoltaic Specialists Conference (PVSC) Pub Date : 2016-06-05 DOI: 10.1109/PVSC.2016.7750124
A. A. Shishavan, Eric C. Foresman, F. Toor
{"title":"Performance analysis of crystalline silicon and amorphous silicon photovoltaic systems in Iowa: 2011 to 2014","authors":"A. A. Shishavan, Eric C. Foresman, F. Toor","doi":"10.1109/PVSC.2016.7750124","DOIUrl":"https://doi.org/10.1109/PVSC.2016.7750124","url":null,"abstract":"Iowa City is in the humid continental climate zone and the goal of this paper is to provide a thorough system performance analysis for PV systems installed in this climate zone. In this work we present the performance analysis of two photovoltaic (PV) systems installed at The University of Iowa in mid-2011. We analyze the system performance from mid-2011 to 2014. First system is a 39 kW-DC building-integrated amorphous silicon (a-Si) PV array. Second system is a 48.1 kW-DC solar charging station based on multicrystalline modules. We use National Renewable Energy Laboratory's System Advisor Model for the PV system performance analysis of the two systems and results of simulation are compared to measured energy yield. In addition, we compare PV system performance with the Iowa Energy Center Solar Calculator (IEC-SC) model for the mc-Si PV system. Our analysis indicates that the SAM model, with correct modeling parameters results in ±20% error relative to measured data whereas the IEC-SC model almost always over estimates the energy yield.","PeriodicalId":6524,"journal":{"name":"2016 IEEE 43rd Photovoltaic Specialists Conference (PVSC)","volume":"3 1","pages":"2625-2630"},"PeriodicalIF":0.0,"publicationDate":"2016-06-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"83303107","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
Multi-port converter for solar powered hybrid vehicle 用于太阳能混合动力汽车的多端口转换器
2016 IEEE 43rd Photovoltaic Specialists Conference (PVSC) Pub Date : 2016-06-05 DOI: 10.1109/PVSC.2016.7750268
Sarvagya Agrawal, S. Singh
{"title":"Multi-port converter for solar powered hybrid vehicle","authors":"Sarvagya Agrawal, S. Singh","doi":"10.1109/PVSC.2016.7750268","DOIUrl":"https://doi.org/10.1109/PVSC.2016.7750268","url":null,"abstract":"In this paper a novel Multi-port converter interfacing a photovoltaic array, battery and a DC load is proposed It is composed of a two uni-directional DC port for interfacing photovoltaic array and DC load, and a bi-directional DC port for interfacing battery. Compared to the traditional stand-alone photovoltaic power system, this system shows the advantages of better protection and more efficient control on charge/discharge of the battery. Furthermore, it can make better use of solar energy and realize energy management of the system The key point of energy management for the system is to control the bi-directional converter efficiently, where bi-directional voltage and current must be controlled. In this paper, the control strategy of bi-directional converter is proposed, which operates at three operation modes: Buck (charge battery), Boost (discharge battery), and shut-down (SD). Maximum power point tracking control is used to extract the maximum power from the Photovoltaic array. Single power processing stage with multiple power ports offers an opportunity to make the whole system simpler, compact and more efficient. Finally, a simulation of 250 W and 5 hp converter is built to verify the theoretical analysis and the control strategies. The simulation is tested for variable irradiance and variable load.","PeriodicalId":6524,"journal":{"name":"2016 IEEE 43rd Photovoltaic Specialists Conference (PVSC)","volume":"35 1","pages":"3258-3262"},"PeriodicalIF":0.0,"publicationDate":"2016-06-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"91080414","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Highly efficient thermophotovoltaics enabled by photon re-use 通过光子再利用实现高效热光伏
2016 IEEE 43rd Photovoltaic Specialists Conference (PVSC) Pub Date : 2016-06-05 DOI: 10.1109/PVSC.2016.7749766
G. Scranton, T. P. Xiao, V. Ganapati, J. Holzrichter, P. Peterson, E. Yablonovitch
{"title":"Highly efficient thermophotovoltaics enabled by photon re-use","authors":"G. Scranton, T. P. Xiao, V. Ganapati, J. Holzrichter, P. Peterson, E. Yablonovitch","doi":"10.1109/PVSC.2016.7749766","DOIUrl":"https://doi.org/10.1109/PVSC.2016.7749766","url":null,"abstract":"Thin-film photovoltaic cells with high reflectivity in the below-bandgap spectral region are ideally suited for thermophotovoltaics. This allows the below-bandgap radiation to be reflected back to the emitter, so that their energy can be used to reheat the source, rather than being lost. In this work, we present a substantial improvement in the theoretical thermophotovoltaic conversion efficiency in the presence of photon re-use. We also predict the achievable conversion efficiency for a system that uses In0.53Ga0.47As photovoltaic cells, and present an experimental optical cavity to be used for future efficiency measurements. Owing to recent advances in thin-film photovoltaics, thermophotovoltaic efficiencies above 50% may soon be realizable.","PeriodicalId":6524,"journal":{"name":"2016 IEEE 43rd Photovoltaic Specialists Conference (PVSC)","volume":"3 1","pages":"1026-1029"},"PeriodicalIF":0.0,"publicationDate":"2016-06-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"84077454","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Depth profiling of chemical and mechanical degradation of UV-exposed PV backsheets uv暴露的PV背板的化学和机械降解深度分析
2016 IEEE 43rd Photovoltaic Specialists Conference (PVSC) Pub Date : 2016-06-05 DOI: 10.1109/PVSC.2016.7749560
X. Gu, Chiao-Chi Lin, Peter J. Krommenhoek, Yadong Lyu, Jae Hyun Kim, Li-Chieh Yu, T. Nguyen, S. Watson
{"title":"Depth profiling of chemical and mechanical degradation of UV-exposed PV backsheets","authors":"X. Gu, Chiao-Chi Lin, Peter J. Krommenhoek, Yadong Lyu, Jae Hyun Kim, Li-Chieh Yu, T. Nguyen, S. Watson","doi":"10.1109/PVSC.2016.7749560","DOIUrl":"https://doi.org/10.1109/PVSC.2016.7749560","url":null,"abstract":"The properties of the multilayer PV backsheets, including their interfaces, during weathering are not well-known. In this study, a commercial PPE (polyethylene terephthalate (PET)/PET/ethylene vinyl acetate (EVA)) backsheet films was selected as a model system for a depth profiling study of chemical and mechanical properties of a backsheet film during UV exposure. Cryo-microtomy was used to obtain cross-sectional PPE samples. The NIST SPHERE (Simulated Photodegradation via High Energy Radiant Exposure) was used for the accelerated laboratory exposure of the materials with UV at 85°C and two relative humidities (RH) of 5 % (dry) and 60 % (wet). Chemical and mechanical depth profiling of the aged and unaged samples was conducted by Raman microscopic mapping, nanoindentation and atomic force microscopy in quantitative nanomechanical mapping mode. The results indicated that non-uniform degradation took place across the thickness of the PPE backsheet with severe chemical and mechanical degradation observed on the outer pigmented PET layer, two adhesive layers, and the pigmented-EVA layer. The regions with the increase in the modulus detected by nanoindetation were consistent with those showing clear chemical degradation in Raman and Attenuated Total Reflection Fourier Transform Infrared Spectroscopy (ATR-FTIR). This depth profiling study brings new understanding to the mechanisms of failures observed in the backsheets during weathering.","PeriodicalId":6524,"journal":{"name":"2016 IEEE 43rd Photovoltaic Specialists Conference (PVSC)","volume":"34 1","pages":"0115-0120"},"PeriodicalIF":0.0,"publicationDate":"2016-06-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"84798215","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
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