2017 IEEE MTT-S International Microwave Symposium (IMS)最新文献_第6页

Telecommunications systems for the NASA Europa missions 美国宇航局木卫二任务的电信系统

2017 IEEE MTT-S International Microwave Symposium (IMS) Pub Date : 2017-06-04 DOI: 10.1109/MWSYM.2017.8058576

D. Srinivasan, C. Sheldon, M. Bray

引用次数: 5

First demonstration of W-band Tri-gate GaN-HEMT power amplifier MMIC with 30 dBm output power 首次演示输出功率为30dbm的w波段三栅极GaN-HEMT功率放大器MMIC

2017 IEEE MTT-S International Microwave Symposium (IMS) Pub Date : 2017-06-04 DOI: 10.1109/MWSYM.2017.8058452

E. Ture, P. Brückner, M. Alsharef, R. Granzner, F. Schwierz, R. Quay, O. Ambacher

引用次数: 10

A Ku-band CMOS FMCW radar transceiver with ring oscillator based waveform generation for snowpack remote sensing 基于环形振荡器波形产生的ku波段CMOS FMCW雷达收发器用于积雪遥感

2017 IEEE MTT-S International Microwave Symposium (IMS) Pub Date : 2017-06-04 DOI: 10.1109/MWSYM.2017.8058659

Yanghyo Kim, A. Tang, K. Liou, T. Painter, Mau-Chung Frank Chang

引用次数: 9

Low-latency MISO FBMC-OQAM: It works for millimeter waves! 低延迟MISO FBMC-OQAM:它适用于毫米波!

2017 IEEE MTT-S International Microwave Symposium (IMS) Pub Date : 2017-06-01 DOI: 10.1109/MWSYM.2017.8058660

Ronald Nissel, E. Zöchmann, M. Lerch, S. Caban, M. Rupp

引用次数: 24

A 200 watt broadband continuous-mode doherty power amplifier for base-station applications 用于基站应用的200瓦宽带连续模式多赫蒂功率放大器

2017 IEEE MTT-S International Microwave Symposium (IMS) Pub Date : 2017-06-01 DOI: 10.1109/MWSYM.2017.8058790

Xiaofan Chen, Wen-hua Chen, Qian Zhang, F. Ghannouchi, Zhenghe Feng

引用次数: 16

A 0.01–26 GHz single-chip SiGe reflectometer for two-port vector network analyzers 用于双端口矢量网络分析仪的0.01-26 GHz单芯片SiGe反射计

2017 IEEE MTT-S International Microwave Symposium (IMS) Pub Date : 2017-06-01 DOI: 10.1109/MWSYM.2017.8058835

Hyunchul Chung, Q. Ma, M. Sayginer, Gabriel M. Rebeiz

{"title":"A 0.01–26 GHz single-chip SiGe reflectometer for two-port vector network analyzers","authors":"Hyunchul Chung, Q. Ma, M. Sayginer, Gabriel M. Rebeiz","doi":"10.1109/MWSYM.2017.8058835","DOIUrl":"https://doi.org/10.1109/MWSYM.2017.8058835","url":null,"abstract":"This paper presents a single-chip 0.01–26 GHz reflectometer for two-port vector network analyzers (VNA). The reflectometer consists of a bridge coupler integrated together with two wideband heterodyne receivers. For wideband operation, a resistive bridge coupler is used with a directivity of 33 dB up to 26 GHz. Also, a high-linearity receiver channel is designed so as to accommodate 10 dBm of RF input power to the reflectometer. The SiGe chip is 1.8 mm2 and consumes 640 mW from a 3.3 V supply. The dynamic range of the reflectometer chip is 127±2 dB at 0.01–26 GHz with an IF resolution bandwidth (RBW) of 10 Hz. The chip is placed on a printed circuit board (PCB), and RF, LO and DC bias are connecterized. Measurements of several device-under-test units (DUTs) with a two-port 0.01–26 GHz VNA composed of two reflectometer chips shows excellent agreement with a commercial VNA, with a magnitude and phase difference of < 0.2 dB and < 2° respectively for Su. Two-port measurements also show an 821 dynamic range of 80 dB, limited by the measurement setup and not by the chip. To our best knowledge, this is the first demonstration of a VNA operating from 10 MHz to mm-wave frequencies with the capability of measuring −80 dB of S21 as well as minimal magnitude and phase difference compared to state-of-the-art VNA measurements.","PeriodicalId":6481,"journal":{"name":"2017 IEEE MTT-S International Microwave Symposium (IMS)","volume":"16 1","pages":"1259-1261"},"PeriodicalIF":0.0,"publicationDate":"2017-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"74469864","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 9

An extended symmetric doherty power amplifier with high efficiency over a wide power range 一种扩展对称多赫蒂功率放大器，在宽功率范围内具有高效率

2017 IEEE MTT-S International Microwave Symposium (IMS) Pub Date : 2017-06-01 DOI: 10.1109/MWSYM.2017.8058794

M. Darwish, A. Pham

引用次数: 7

Orthogonal Time Frequency Space (OTFS) modulation for millimeter-wave communications systems 毫米波通信系统的正交时频空间(OTFS)调制

2017 IEEE MTT-S International Microwave Symposium (IMS) Pub Date : 2017-06-01 DOI: 10.1109/MWSYM.2017.8058662

R. Hadani, S. Rakib, A. Molisch, C. Ibars, A. Monk, M. Tsatsanis, J. Delfeld, A. Goldsmith, R. Calderbank

引用次数: 129

VO2 switch based submillimeter-wave phase shifters 基于VO2开关的亚毫米波移相器

2017 IEEE MTT-S International Microwave Symposium (IMS) Pub Date : 2017-06-01 DOI: 10.1109/MWSYM.2017.8058787

C. Hillman, B. Ma, P. Stupar, Z. Griffith

{"title":"VO2 switch based submillimeter-wave phase shifters","authors":"C. Hillman, B. Ma, P. Stupar, Z. Griffith","doi":"10.1109/MWSYM.2017.8058787","DOIUrl":"https://doi.org/10.1109/MWSYM.2017.8058787","url":null,"abstract":"A monolithic 3-bit phase shifter has been fabricated and demonstrates broadband and low loss performance from 220 GHz to 240 GHz. The phase shifter utilizes an ultra-low loss vanadium dioxide switch for phase state control. The design uses a low-pass π-filter networks as phase shift elements for 45, 90 and 180 degree bits. This phase shifter's mean insertion loss of 7.6 dB is 3dB lower than any other passive phase shifter we could identify in literature and comparable to the best active vector-sum devices. The RMS phase error is a competitive 6.8 degrees at 230GHz and averages only 8 dB over the band from 220 to 240 GHz. This phase shifter's complete circuit footprint is < 0.1mm2 easily fitting within (λ/2)2 ∼ 0.4 mm2 array spacing. A second topology was also demonstrated that consists of a one-port transmission line reflection phase shifter (TLPS) using a variable length, short-circuit terminated synthetic transmission line. This device demonstrates an average insertion loss of 5.2 dB and RMS phase error of 30 degrees. We can find no passive phase shifter with comparable performance or compactness to either of the devices presented here.","PeriodicalId":6481,"journal":{"name":"2017 IEEE MTT-S International Microwave Symposium (IMS)","volume":"64 1","pages":"1098-1101"},"PeriodicalIF":0.0,"publicationDate":"2017-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"74944062","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 4

A wideband millimeter-wave differential stacked-FET power amplifier with 17.3 dBm output power and 25% PAE in 45nm SOI CMOS 基于45nm SOI CMOS的17.3 dBm输出功率和25% PAE的宽带毫米波差分叠加场效应晶体管功率放大器

2017 IEEE MTT-S International Microwave Symposium (IMS) Pub Date : 2017-06-01 DOI: 10.1109/MWSYM.2017.8058965

J. Xia, A. Chung, S. Boumaiza

引用次数: 11